CN106463497A - 晶片打标方法 - Google Patents

晶片打标方法 Download PDF

Info

Publication number
CN106463497A
CN106463497A CN201480079450.2A CN201480079450A CN106463497A CN 106463497 A CN106463497 A CN 106463497A CN 201480079450 A CN201480079450 A CN 201480079450A CN 106463497 A CN106463497 A CN 106463497A
Authority
CN
China
Prior art keywords
laser beam
wavelength
marking method
wafer
wafer marking
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201480079450.2A
Other languages
English (en)
Other versions
CN106463497B (zh
Inventor
具春会
金秀永
郑成钒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EO Technics Co Ltd
Original Assignee
EO Technics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EO Technics Co Ltd filed Critical EO Technics Co Ltd
Publication of CN106463497A publication Critical patent/CN106463497A/zh
Application granted granted Critical
Publication of CN106463497B publication Critical patent/CN106463497B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/18—Working by laser beam, e.g. welding, cutting or boring using absorbing layers on the workpiece, e.g. for marking or protecting purposes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B23K26/355—Texturing
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
    • C03C23/0025—Other surface treatment of glass not in the form of fibres or filaments by irradiation by a laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67282—Marking devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54433—Marks applied to semiconductor devices or parts containing identification or tracking information
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical & Material Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Laser Beam Processing (AREA)

Abstract

本发明公开了一种利用激光对附着有加工用带的晶片进行打标的方法。所公开的激光打标方法包括：使波长为532nm的激光束透过被附着在所述晶片的一面上的所述加工用带的步骤；以及使所述波长为532nm的激光束以预定速度移动，以在所述晶片的一面上执行打标操作的步骤，其中，所述波长为532nm的激光束具有8kHz至40kHz的频率和0.8W至2W的输出功率。

Description

晶片打标方法
技术领域
本发明涉及晶片打标方法，具体地涉及使激光束透过被附着在晶片的一面上的加工用带以对晶片的一面执行激光打标操作的方法。
背景技术
当对厚度薄的晶片或者发生翘曲(warpage)的晶片进行激光打标操作时，晶片很可能发生损坏。因此，作为用于完善其的方法，目前使用以利用加工用带在晶片的一面附着加工用带的状态来执行激光加工操作的方法。在该情况下，为了对附着有加工用带的晶片进行打标操作，需要激光束透过加工用带而到达晶片的表面。通常，附着到晶片的加工用带可以由各种材料制成，根据该加工用带的材料，激光束透过加工用带的透射率会有所不同。根据该加工用带的透射率，在晶片表面实现的激光打标的质量也会有所不同。
发明内容
技术问题
根据本发明的一实施例，提供一种使波长为532nm的激光束透过被附着在晶片的一面上的加工用带以对晶片的一面执行激光打标操作的方法。
有益效果
根据本发明的实施例，在对附着有加工用带的晶片进行打标时，可以通过使波长为532nm的激光束透过被附着在晶片的一面的所述加工用带而进行晶片打标操作。其中，可以通过根据加工用带的透射率对激光束的频率、输出功率和移动速度进行优化来提高激光打标的质量。
附图说明
图1示意性地示出根据本发明的实施例的激光打标系统。
图2放大示出在图1中示出的晶片和附着在晶片的上面的加工用带。
具体实施方式
以下参照附图详细说明本发明的实施例。下面例示的实施例不用于限制本发明的范围，这些实施例是为了向本领域的普通技术人员说明本发明而提供的。附图中相同的附图标记指示相同的组成部分，为了说明的清楚起见可以夸大各组成部分的大小或厚度。此外，当描述预定的材料层存在于基板或其它层上时，该材料层可以直接接触基板或其它层，也可以在其之间存在其它的第三层。此外，在下面的实施例中，形成各层的材料为示例性的，因此也可以使用这些材料之外的其他材料。
图1示意性地示出根据本发明的实施例的激光打标系统。而且，图2放大示出在图1中示出的晶片W和附着在晶片W的表面的加工用带150。
参照图1和图2，根据本发明的激光打标系统可以包括：激光光源110，该激光光源110发射激光束L；扫描仪(scanner)120，从所述激光光源110发射的激光束L入射至该扫描仪120，该扫描仪120通过旋转使所入射的激光束L以预定速度在晶片W的表面上移动，以执行打标操作；以及聚焦透镜(focusing lens)130，该聚焦透镜130使从所述扫描仪120发射出的激光束L聚集在晶片W的表面上。此外，尽管图中未示出，但在所述激光束L的光路上还设置有至少一个光学单元。
作为打标操作的加工对象的所述晶片W例如可以利用硅晶片或者蓝宝石晶片等，但不限于此，也可以使用除此之外的其他各种材料的晶片。另外，在所述晶片W的表面(图1中的上表面)上附着有加工用带150。该加工用带150可以包括使从激光光源110射出的激光束L透过的材料。例如，所述加工用带150可以由聚氯乙烯(PVC)、聚烯烃(PO)或聚乙烯(PET)等制成。在这些材料中，针对激光束的透射率最高的材料可以是PVC，透射率最低的材料可以为PO。然而，不限于以上这些材料，所述加工用带150可以包括除这些材料以外的其他各种材料。此外，所述加工用带150例如可以为透明色、蓝色和灰色。其中，针对激光束L的透射率最高的颜色可以是透明色，透射率最低的颜色可以为灰色。然而，不限于以上这些颜色，并且所述加工用带150可以包括除这些颜色以外的其他各种颜色。
从所述激光光源110发射出用于执行打标操作的激光束L。在本实施例中，从所述激光光源110发射出的激光束L可以为波长为532nm的绿色激光束(green laser beam)。从所述激光光源110发射出的波长为532nm的激光束L入射至扫描仪120，所述扫描仪120使波长为532nm的激光束L朝向聚焦透镜130反射。其中，所述扫描仪120可以通过旋转使所入射的激光束L移动，因此，通过所述扫描仪120的旋转可以调节入射至晶片W的表面的激光束L的移动速度。
从所述扫描仪120发射出的波长为532nm的激光束L经由聚焦透镜130透过加工用带150，然后聚集在晶片W的表面。其中，通过扫描仪120使入射至晶片W的表面的激光束L以预定速度移动，从而可以对晶片W的表面执行打标操作。
在本实施例中，从所述激光光源110发射出的波长为532nm的激光束L可以具有约8kHz至40kHz的频率和0.8W至2W的输出功率。其中，可以通过根据加工用带150的透射率对所述波长为532nm的激光束L的频率、输出功率和移动速度进行调节，控制所述晶片W的打标质量。例如，在所述加工用带150的透射率高的情况下，即使利用具有相对小的输出功率的、波长为532nm的激光束L也可以获得好的打标质量；在所述加工用带150的透射率低的情况下，需要利用具有相对大的输出功率的、波长为532nm的激光束L才能够获得好的打标质量。
更具体地，在针对波长为532nm的激光束L的加工用带150的透射率比较高时，所述波长为532nm的激光束L可以具有约20kHz至40kHz的频率和0.8W至1.5W的输出功率。在该情况下，在波长为532nm的激光束L的移动速度为300mm/s以上时，可以获得优异的打标质量。
此外，在针对波长为532nm的激光束L的加工用带150的透射率比较低时，所述波长为532nm的激光束L可以具有约8kHz至20kHz的频率和1W至2W的输出功率。在该情况下，在波长为532nm的激光束L的移动速度为200mm/s至300mm/s时，可以获得优异的打标质量。
如上所述，在根据本发明的实施例的激光打标方法中，可以通过根据加工用带150的透射率对波长为532nm的激光束L的频率、输出功率和移动速度进行调节，获得优异的打标质量。
虽然在上文描述了本发明的实施例，但是这些实施例仅为示例性的，本领域的普通技术人员可以理解，可以从这些实施例形成各种变型和等同的其他实施例。
实施方式
在本发明的一方面中，
提供一种晶片打标方法，所述晶片打标方法对附着有加工用带的晶片进行打标，所述晶片打标方法包括：使波长为532nm的激光束透过被附着在所述晶片的一面的所述加工用带的步骤；以及
使所述波长为532nm的激光束以预定速度移动，以在所述晶片的一面上执行打标操作的步骤，
其中，所述波长为532nm的激光束具有8kHz至40kHz的频率和0.8W至2W的输出功率。
可以通过根据所述加工用带的透射率调节所述波长为532nm的激光束的频率、输出功率和移动速度，控制所述晶片的打标质量。
所述波长为532nm的激光束可具有20kHz至40kHz的频率和0.8W至1.5W的输出功率，且所述激光束的移动速度可以为300mm/s以上。此外，所述波长为532nm的激光束可具有8kHz至20kHz的频率和1W至2W的输出功率，且所述激光束的移动速度可以为200mm/s至300mm/s。
例如，所述加工用带可以包括聚氯乙烯(PVC)、聚烯烃(PO)或聚乙烯(PET)。所述加工用带可以为透明色、蓝色或灰色。

Claims (6)

1.一种晶片打标方法，所述晶片打标方法利用激光对附着有加工用带的晶片进行打标，所述晶片打标方法包括：
使波长为532nm的激光束透过被附着在所述晶片的一面上的所述加工用带的步骤；以及
使所述波长为532nm的激光束以预定速度移动，以在所述晶片的一面上执行打标操作的步骤，
其中，所述波长为532nm的激光束具有8kHz至40kHz的频率和0.8W至2W的输出功率。
2.根据权利要求1所述的晶片打标方法，其中，通过根据所述加工用带的透射率调节所述波长为532nm的激光束的频率、输出功率和移动速度，控制所述晶片的打标质量。
3.根据权利要求2所述的晶片打标方法，其中，所述波长为532nm的激光束具有20kHz至40kHz的频率和0.8W至1.5W的输出功率，所述激光束的移动速度为300mm/s以上。
4.根据权利要求2所述的晶片打标方法，其中，所述波长为532nm的激光束具有8kHz至20kHz的频率和1W至2W的输出功率，所述激光束的移动速度为200mm/s至300mm/s。
5.根据权利要求1所述的晶片打标方法，其中，所述加工用带包括聚氯乙烯(PVC)、聚烯烃(PO)或聚乙烯(PET)。
6.根据权利要求1所述的晶片打标方法，其中，所述加工用带为透明色、蓝色或灰色。
CN201480079450.2A 2014-07-03 2014-08-11 晶片打标方法 Active CN106463497B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020140083232A KR101602782B1 (ko) 2014-07-03 2014-07-03 웨이퍼 마킹 방법
KR10-2014-0083232 2014-07-03
PCT/KR2014/007448 WO2016003005A1 (ko) 2014-07-03 2014-08-11 웨이퍼 마킹 방법

Publications (2)

Publication Number Publication Date
CN106463497A true CN106463497A (zh) 2017-02-22
CN106463497B CN106463497B (zh) 2019-10-22

Family

ID=55019517

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480079450.2A Active CN106463497B (zh) 2014-07-03 2014-08-11 晶片打标方法

Country Status (7)

Country Link
US (1) US10304778B2 (zh)
KR (1) KR101602782B1 (zh)
CN (1) CN106463497B (zh)
MY (1) MY190094A (zh)
SG (1) SG11201610011RA (zh)
TW (1) TWI607545B (zh)
WO (1) WO2016003005A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114682921A (zh) * 2020-12-30 2022-07-01 环球晶圆股份有限公司 碳化硅晶片的激光雕刻方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107256894B (zh) * 2017-05-18 2018-08-10 广东爱旭科技股份有限公司 管式perc单面太阳能电池及其制备方法和专用设备
CN107256898B (zh) * 2017-05-18 2018-08-03 广东爱旭科技股份有限公司 管式perc双面太阳能电池及其制备方法和专用设备

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020050489A1 (en) * 2000-10-26 2002-05-02 Kabushiki Kaisha Toshiba Apparatus and method for laser beam machining, and method for manufacturing semiconductor devices using laser beam machining
JP2005294636A (ja) * 2004-04-01 2005-10-20 Hitachi Constr Mach Co Ltd ウエハの個片化方法、チップ、レーザマーキング方法およびレーザマーキング装置
US20080176376A1 (en) * 2007-01-23 2008-07-24 Disco Corporation Making method for product information
CN101533771A (zh) * 2009-03-03 2009-09-16 浙江水晶光电科技股份有限公司 晶片表面的激光打标方法
US20100047999A1 (en) * 2008-08-22 2010-02-25 Disco Corporation Working method for an optical device wafer
CN101794723A (zh) * 2009-01-30 2010-08-04 日东电工株式会社 切割带集成晶片背面保护膜
CN102153960A (zh) * 2009-12-24 2011-08-17 日东电工株式会社 倒装芯片型半导体背面用膜
CN102376616A (zh) * 2010-07-20 2012-03-14 日东电工株式会社 倒装芯片型半导体背面用膜、半导体背面用切割带集成膜、半导体器件的生产方法和倒装芯片型半导体器件
CN102653035A (zh) * 2011-03-04 2012-09-05 三菱电机株式会社 SiC半导体晶片的标刻方法以及SiC半导体晶片
CN103165542A (zh) * 2011-12-15 2013-06-19 北京大学深圳研究生院 倒装芯片封装中的芯片背面涂层
US20140120699A1 (en) * 2010-11-05 2014-05-01 Win Semiconductors Corp. Fabrication method for dicing of semiconductor wafers using laser cutting techniques
US20140162434A1 (en) * 2012-12-10 2014-06-12 Nitto Denko Corporation Dicing tape integrated adhesive sheet, method of manufacturing semiconductor device using dicing tape integrated adhesive sheet, and semiconductor device

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10305420A (ja) 1997-03-04 1998-11-17 Ngk Insulators Ltd 酸化物単結晶からなる母材の加工方法、機能性デバイスの製造方法
KR20010073299A (ko) * 2000-01-13 2001-08-01 성규동 웨이퍼 마킹 장치
DE10196418B4 (de) 2000-07-12 2010-07-22 Electro Scientific Industries, Inc., Portland Lasersystem zum Bearbeiten von Verbindungen eines IC-Bauelements, Verfahren zum Bearbeiten von Verbindungen eines IC-Bauelements und Verfahren zum Ausrichten eines Laserbearbeitungsstrahls auf eine Verbindung eines IC-Bauelements
US8410410B2 (en) * 2006-07-12 2013-04-02 Nordson Corporation Ultraviolet lamp system with cooling air control
KR101040439B1 (ko) * 2006-10-24 2011-06-09 주식회사 엘지화학 다이싱-다이본딩 필름 및 이를 이용하는 반도체 패키징방법
KR100897755B1 (ko) * 2007-10-31 2009-05-15 주식회사 동부하이텍 웨이퍼 마킹 방법
US9446840B2 (en) * 2008-07-01 2016-09-20 The Boeing Company Systems and methods for alleviating aircraft loads with plasma actuators
KR101012332B1 (ko) * 2008-07-18 2011-02-08 주식회사 티이피 반도체 웨이퍼 절단 시스템
JP5885325B2 (ja) * 2009-05-29 2016-03-15 日東電工株式会社 ダイシングテープ一体型半導体裏面用フィルム
TWI484655B (zh) * 2011-01-31 2015-05-11 Inventec Solar Energy Corp 在太陽能電池表面讀寫識別碼的方法
WO2012133077A1 (ja) * 2011-03-25 2012-10-04 株式会社村田製作所 積層セラミックコンデンサ、誘電体セラミック、積層セラミック電子部品および積層セラミックコンデンサの製造方法
KR101299236B1 (ko) * 2011-12-28 2013-08-22 주식회사 이오테크닉스 레이저를 이용한 웨이퍼 지지용 지지 테이프 절단 장치 및 방법
JP2013149737A (ja) 2012-01-18 2013-08-01 Nitto Denko Corp フリップチップ型半導体装置の製造方法
US20150037915A1 (en) * 2013-07-31 2015-02-05 Wei-Sheng Lei Method and system for laser focus plane determination in a laser scribing process

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020050489A1 (en) * 2000-10-26 2002-05-02 Kabushiki Kaisha Toshiba Apparatus and method for laser beam machining, and method for manufacturing semiconductor devices using laser beam machining
JP2005294636A (ja) * 2004-04-01 2005-10-20 Hitachi Constr Mach Co Ltd ウエハの個片化方法、チップ、レーザマーキング方法およびレーザマーキング装置
US20080176376A1 (en) * 2007-01-23 2008-07-24 Disco Corporation Making method for product information
US20100047999A1 (en) * 2008-08-22 2010-02-25 Disco Corporation Working method for an optical device wafer
CN101794723A (zh) * 2009-01-30 2010-08-04 日东电工株式会社 切割带集成晶片背面保护膜
CN101533771A (zh) * 2009-03-03 2009-09-16 浙江水晶光电科技股份有限公司 晶片表面的激光打标方法
CN102153960A (zh) * 2009-12-24 2011-08-17 日东电工株式会社 倒装芯片型半导体背面用膜
CN102376616A (zh) * 2010-07-20 2012-03-14 日东电工株式会社 倒装芯片型半导体背面用膜、半导体背面用切割带集成膜、半导体器件的生产方法和倒装芯片型半导体器件
US20140120699A1 (en) * 2010-11-05 2014-05-01 Win Semiconductors Corp. Fabrication method for dicing of semiconductor wafers using laser cutting techniques
CN102653035A (zh) * 2011-03-04 2012-09-05 三菱电机株式会社 SiC半导体晶片的标刻方法以及SiC半导体晶片
CN103165542A (zh) * 2011-12-15 2013-06-19 北京大学深圳研究生院 倒装芯片封装中的芯片背面涂层
US20140162434A1 (en) * 2012-12-10 2014-06-12 Nitto Denko Corporation Dicing tape integrated adhesive sheet, method of manufacturing semiconductor device using dicing tape integrated adhesive sheet, and semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114682921A (zh) * 2020-12-30 2022-07-01 环球晶圆股份有限公司 碳化硅晶片的激光雕刻方法

Also Published As

Publication number Publication date
KR101602782B1 (ko) 2016-03-11
US10304778B2 (en) 2019-05-28
TW201601865A (zh) 2016-01-16
WO2016003005A1 (ko) 2016-01-07
US20170200680A1 (en) 2017-07-13
SG11201610011RA (en) 2016-12-29
KR20160004640A (ko) 2016-01-13
MY190094A (en) 2022-03-26
TWI607545B (zh) 2017-12-01
CN106463497B (zh) 2019-10-22

Similar Documents

Publication Publication Date Title
CN103962728B (zh) 激光加工方法
CN104022080A (zh) 晶片的加工方法
US20120299219A1 (en) Laser processing method
KR20130074737A (ko) 웨이퍼의 가공 방법
CN104148816A (zh) 激光加工方法
CN104112712A (zh) 晶片的加工方法
TW201730946A (zh) 晶圓的加工方法
KR20090075772A (ko) 반도체 칩의 제조 방법
CN102405124A (zh) 激光加工方法
CN106463497A (zh) 晶片打标方法
MY194179A (en) Semiconductor substrate processing method
CN103785957A (zh) 激光加工装置及具有图案的基板的加工条件设定方法
WO2014171649A1 (ko) 웨이퍼의 시닝 방법 및 장치
CN102886609A (zh) 应用于led器件分离的多焦点飞秒激光划片方法
CN109309047A (zh) 处理衬底的方法
CN106914704A (zh) 光器件晶片的加工方法
CN105895574A (zh) 加工装置的卡盘台
Kim et al. Selective lift-off of GaN light-emitting diode from a sapphire substrate using 266-nm diode-pumped solid-state laser irradiation
KR102297791B1 (ko) 레이저를 이용하여 전사 대상물을 분리하고 전사하는 장치 및 방법
CN105458517A (zh) 晶圆激光划片与裂片方法及系统
JP6120644B2 (ja) 切削溝の検出方法
SG10201807743WA (en) Wafer processing method
KR20190108898A (ko) 레이저 전사 장치 및 방법
CN103659003A (zh) 激光加工装置
JP6290010B2 (ja) ウェーハの分割方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant