TWI765905B - 用於半導體材料層退火之裝置，半導體材料層退火之方法，及平面顯示器 - Google Patents

用於半導體材料層退火之裝置，半導體材料層退火之方法，及平面顯示器 Download PDF

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TWI765905B
TWI765905B TW106128360A TW106128360A TWI765905B TW I765905 B TWI765905 B TW I765905B TW 106128360 A TW106128360 A TW 106128360A TW 106128360 A TW106128360 A TW 106128360A TW I765905 B TWI765905 B TW I765905B
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semiconductor material
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TW106128360A
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TW201812919A (zh
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菲利普 湯瑪士 隆斯畢
大衛 湯瑪斯 艾德蒙 邁爾斯
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英商萬佳雷射有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/067—Dividing the beam into multiple beams, e.g. multi-focusing
    • B23K26/0676—Dividing the beam into multiple beams, e.g. multi-focusing into dependently operating sub-beams, e.g. an array of spots with fixed spatial relationship or for performing simultaneously identical operations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/382—Scanning of a beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
TW106128360A 2016-08-22 2017-08-22 用於半導體材料層退火之裝置，半導體材料層退火之方法，及平面顯示器 TWI765905B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
GBGB1614342.2A GB201614342D0 (en) 2016-08-22 2016-08-22 An apparatus for annealing a layer of amorphous silicon, a method of annealing a layer of amorphous silicon, and a flat panel display
??1614342.2 2016-08-22
GB1614342.2 2016-08-22
??1700800.4 2017-01-17
GB1700800.4A GB2553162B (en) 2016-08-22 2017-01-17 An apparatus for annealing a layer of amorphous silicon, a method of annealing a layer of amorphous silicon, and a flat panel display
GB1700800.4 2017-01-17

Publications (2)

Publication Number Publication Date
TW201812919A TW201812919A (zh) 2018-04-01
TWI765905B true TWI765905B (zh) 2022-06-01

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TW106128360A TWI765905B (zh) 2016-08-22 2017-08-22 用於半導體材料層退火之裝置，半導體材料層退火之方法，及平面顯示器

Country Status (8)

Country Link
US (1) US20190181009A1 (enExample)
EP (1) EP3501034A1 (enExample)
JP (1) JP2019532494A (enExample)
KR (1) KR20190040036A (enExample)
CN (1) CN109643644A (enExample)
GB (2) GB201614342D0 (enExample)
TW (1) TWI765905B (enExample)
WO (1) WO2018037211A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11384425B2 (en) * 2017-07-13 2022-07-12 Purdue Research Foundation Method of enhancing electrical conduction in gallium-doped zinc oxide films and films made therefrom
AU2018306795A1 (en) * 2017-07-26 2020-02-13 Angel Group Co., Ltd. Game token money, method of manufacturing game token money, and inspection system
WO2023070615A1 (en) 2021-10-30 2023-05-04 Yangtze Memory Technologies Co., Ltd. Methods for thermal treatment of a semiconductor layer in semiconductor device

Citations (7)

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WO2003071344A1 (en) 2002-02-25 2003-08-28 Orbotech Ltd. Method for manufacturing flat panel display substrates
US6635932B2 (en) * 2000-08-10 2003-10-21 The Regents Of The University Of California Thin film crystal growth by laser annealing
TW583723B (en) * 2001-10-10 2004-04-11 Hitachi Ltd Laser annealing apparatus, TFT device and annealing method of the same
TWI250360B (en) * 1998-10-06 2006-03-01 Toshiba Corp Method of producing polycrystalline silicon
US7397831B2 (en) * 2004-01-30 2008-07-08 Hitachi Displays, Ltd. Laser annealing apparatus and annealing method of semiconductor thin film using the same
US20100291760A1 (en) * 2009-05-15 2010-11-18 Nicholas Doudoumopoulos Method and system for spatially selective crystallization of amorphous silicon
TW201432791A (zh) * 2012-12-31 2014-08-16 ｎ萊特光電公司 用於低溫多晶矽結晶的短脈衝光纖雷射

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JP3477969B2 (ja) * 1996-01-12 2003-12-10 セイコーエプソン株式会社 アクティブマトリクス基板の製造方法及び液晶表示装置
JP2005191173A (ja) * 2003-12-25 2005-07-14 Hitachi Ltd 表示装置及びその製造方法
US7199397B2 (en) * 2004-05-05 2007-04-03 Au Optronics Corporation AMOLED circuit layout
JP2006135192A (ja) * 2004-11-08 2006-05-25 Sharp Corp 半導体デバイスの製造方法と製造装置
JP2007214527A (ja) * 2006-01-13 2007-08-23 Ihi Corp レーザアニール方法およびレーザアニール装置
JP5030524B2 (ja) * 2006-10-05 2012-09-19 株式会社半導体エネルギー研究所 レーザアニール方法及びレーザアニール装置
DE102008045533B4 (de) * 2008-09-03 2016-03-03 Innovavent Gmbh Verfahren und Vorrichtung zum Ändern der Struktur einer Halbleiterschicht
JP5471046B2 (ja) * 2009-06-03 2014-04-16 株式会社ブイ・テクノロジー レーザアニール方法及びレーザアニール装置
KR20150013731A (ko) * 2012-05-14 2015-02-05 더 트러스티스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 박막들을 위한 개선된 엑시머 레이저 어닐링
JP5918118B2 (ja) * 2012-12-18 2016-05-18 株式会社日本製鋼所 結晶半導体膜の製造方法
CN105074875B (zh) * 2013-03-07 2018-09-18 三菱电机株式会社 激光退火装置、半导体装置的制造方法
WO2015127031A1 (en) * 2014-02-19 2015-08-27 The Trustees Of Columbia University In The City Of New York Sequential laser firing for thin film processing

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI250360B (en) * 1998-10-06 2006-03-01 Toshiba Corp Method of producing polycrystalline silicon
US6635932B2 (en) * 2000-08-10 2003-10-21 The Regents Of The University Of California Thin film crystal growth by laser annealing
TW583723B (en) * 2001-10-10 2004-04-11 Hitachi Ltd Laser annealing apparatus, TFT device and annealing method of the same
US6943086B2 (en) * 2001-10-10 2005-09-13 Hitachi, Ltd. Laser annealing apparatus, TFT device and annealing method of the same
WO2003071344A1 (en) 2002-02-25 2003-08-28 Orbotech Ltd. Method for manufacturing flat panel display substrates
US7397831B2 (en) * 2004-01-30 2008-07-08 Hitachi Displays, Ltd. Laser annealing apparatus and annealing method of semiconductor thin film using the same
US20100291760A1 (en) * 2009-05-15 2010-11-18 Nicholas Doudoumopoulos Method and system for spatially selective crystallization of amorphous silicon
TW201432791A (zh) * 2012-12-31 2014-08-16 ｎ萊特光電公司 用於低溫多晶矽結晶的短脈衝光纖雷射

Also Published As

Publication number Publication date
GB2553162B (en) 2020-09-16
WO2018037211A1 (en) 2018-03-01
US20190181009A1 (en) 2019-06-13
GB201614342D0 (en) 2016-10-05
KR20190040036A (ko) 2019-04-16
JP2019532494A (ja) 2019-11-07
TW201812919A (zh) 2018-04-01
GB2553162A (en) 2018-02-28
GB201700800D0 (en) 2017-03-01
CN109643644A (zh) 2019-04-16
EP3501034A1 (en) 2019-06-26

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