TWI765905B - 用於半導體材料層退火之裝置，半導體材料層退火之方法，及平面顯示器 - Google Patents

用於半導體材料層退火之裝置，半導體材料層退火之方法，及平面顯示器 Download PDF

Info

Publication number
TWI765905B
TWI765905B TW106128360A TW106128360A TWI765905B TW I765905 B TWI765905 B TW I765905B TW 106128360 A TW106128360 A TW 106128360A TW 106128360 A TW106128360 A TW 106128360A TW I765905 B TWI765905 B TW I765905B
Authority
TW
Taiwan
Prior art keywords
semiconductor material
sub
layer
beams
regions
Prior art date
Application number
TW106128360A
Other languages
English (en)
Chinese (zh)
Other versions
TW201812919A (zh
Inventor
菲利普 湯瑪士 隆斯畢
大衛 湯瑪斯 艾德蒙 邁爾斯
Original Assignee
英商萬佳雷射有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 英商萬佳雷射有限公司 filed Critical 英商萬佳雷射有限公司
Publication of TW201812919A publication Critical patent/TW201812919A/zh
Application granted granted Critical
Publication of TWI765905B publication Critical patent/TWI765905B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/2636—Bombardment with radiation with high-energy radiation for heating, e.g. electron beam heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
    • B23K26/0676—Dividing the beam into multiple beams, e.g. multifocusing into dependently operating sub-beams, e.g. an array of spots with fixed spatial relationship or for performing simultaneously identical operations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/42—Bombardment with radiation
    • H01L21/423—Bombardment with radiation with high-energy radiation
    • H01L21/428—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Recrystallisation Techniques (AREA)
TW106128360A 2016-08-22 2017-08-22 用於半導體材料層退火之裝置，半導體材料層退火之方法，及平面顯示器 TWI765905B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
GB1614342.2 2016-08-22
GBGB1614342.2A GB201614342D0 (en) 2016-08-22 2016-08-22 An apparatus for annealing a layer of amorphous silicon, a method of annealing a layer of amorphous silicon, and a flat panel display
??1614342.2 2016-08-22
GB1700800.4 2017-01-17
??1700800.4 2017-01-17
GB1700800.4A GB2553162B (en) 2016-08-22 2017-01-17 An apparatus for annealing a layer of amorphous silicon, a method of annealing a layer of amorphous silicon, and a flat panel display

Publications (2)

Publication Number Publication Date
TW201812919A TW201812919A (zh) 2018-04-01
TWI765905B true TWI765905B (zh) 2022-06-01

Family

ID=57045609

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106128360A TWI765905B (zh) 2016-08-22 2017-08-22 用於半導體材料層退火之裝置，半導體材料層退火之方法，及平面顯示器

Country Status (8)

Country Link
US (1) US20190181009A1 (enExample)
EP (1) EP3501034A1 (enExample)
JP (1) JP2019532494A (enExample)
KR (1) KR20190040036A (enExample)
CN (1) CN109643644A (enExample)
GB (2) GB201614342D0 (enExample)
TW (1) TWI765905B (enExample)
WO (1) WO2018037211A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11384425B2 (en) * 2017-07-13 2022-07-12 Purdue Research Foundation Method of enhancing electrical conduction in gallium-doped zinc oxide films and films made therefrom
JPWO2019021820A1 (ja) * 2017-07-26 2020-08-06 エンゼルプレイングカード株式会社 遊技用代用貨幣、遊技用代用貨幣の製造方法、及び検査システム
CN116635978A (zh) 2021-10-30 2023-08-22 长江存储科技有限责任公司 用于半导体器件中的半导体层的热处理的方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003071344A1 (en) 2002-02-25 2003-08-28 Orbotech Ltd. Method for manufacturing flat panel display substrates
US6635932B2 (en) * 2000-08-10 2003-10-21 The Regents Of The University Of California Thin film crystal growth by laser annealing
TW583723B (en) * 2001-10-10 2004-04-11 Hitachi Ltd Laser annealing apparatus, TFT device and annealing method of the same
TWI250360B (en) * 1998-10-06 2006-03-01 Toshiba Corp Method of producing polycrystalline silicon
US7397831B2 (en) * 2004-01-30 2008-07-08 Hitachi Displays, Ltd. Laser annealing apparatus and annealing method of semiconductor thin film using the same
US20100291760A1 (en) * 2009-05-15 2010-11-18 Nicholas Doudoumopoulos Method and system for spatially selective crystallization of amorphous silicon
TW201432791A (zh) * 2012-12-31 2014-08-16 Nlight Photonics Corp 用於低溫多晶矽結晶的短脈衝光纖雷射

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3477969B2 (ja) * 1996-01-12 2003-12-10 セイコーエプソン株式会社 アクティブマトリクス基板の製造方法及び液晶表示装置
JP2005191173A (ja) * 2003-12-25 2005-07-14 Hitachi Ltd 表示装置及びその製造方法
US7199397B2 (en) * 2004-05-05 2007-04-03 Au Optronics Corporation AMOLED circuit layout
JP2006135192A (ja) * 2004-11-08 2006-05-25 Sharp Corp 半導体デバイスの製造方法と製造装置
JP2007214527A (ja) * 2006-01-13 2007-08-23 Ihi Corp レーザアニール方法およびレーザアニール装置
JP5030524B2 (ja) * 2006-10-05 2012-09-19 株式会社半導体エネルギー研究所 レーザアニール方法及びレーザアニール装置
DE102008045533B4 (de) * 2008-09-03 2016-03-03 Innovavent Gmbh Verfahren und Vorrichtung zum Ändern der Struktur einer Halbleiterschicht
JP5471046B2 (ja) * 2009-06-03 2014-04-16 株式会社ブイ・テクノロジー レーザアニール方法及びレーザアニール装置
WO2013172965A1 (en) * 2012-05-14 2013-11-21 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
JP5918118B2 (ja) * 2012-12-18 2016-05-18 株式会社日本製鋼所 結晶半導体膜の製造方法
EP2966671B1 (en) * 2013-03-07 2022-08-31 Mitsubishi Electric Corporation Laser annealing device, and method of producing semiconductor device
WO2015127031A1 (en) * 2014-02-19 2015-08-27 The Trustees Of Columbia University In The City Of New York Sequential laser firing for thin film processing

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI250360B (en) * 1998-10-06 2006-03-01 Toshiba Corp Method of producing polycrystalline silicon
US6635932B2 (en) * 2000-08-10 2003-10-21 The Regents Of The University Of California Thin film crystal growth by laser annealing
TW583723B (en) * 2001-10-10 2004-04-11 Hitachi Ltd Laser annealing apparatus, TFT device and annealing method of the same
US6943086B2 (en) * 2001-10-10 2005-09-13 Hitachi, Ltd. Laser annealing apparatus, TFT device and annealing method of the same
WO2003071344A1 (en) 2002-02-25 2003-08-28 Orbotech Ltd. Method for manufacturing flat panel display substrates
US7397831B2 (en) * 2004-01-30 2008-07-08 Hitachi Displays, Ltd. Laser annealing apparatus and annealing method of semiconductor thin film using the same
US20100291760A1 (en) * 2009-05-15 2010-11-18 Nicholas Doudoumopoulos Method and system for spatially selective crystallization of amorphous silicon
TW201432791A (zh) * 2012-12-31 2014-08-16 Nlight Photonics Corp 用於低溫多晶矽結晶的短脈衝光纖雷射

Also Published As

Publication number Publication date
GB201614342D0 (en) 2016-10-05
GB2553162A (en) 2018-02-28
GB201700800D0 (en) 2017-03-01
KR20190040036A (ko) 2019-04-16
JP2019532494A (ja) 2019-11-07
GB2553162B (en) 2020-09-16
CN109643644A (zh) 2019-04-16
TW201812919A (zh) 2018-04-01
WO2018037211A1 (en) 2018-03-01
US20190181009A1 (en) 2019-06-13
EP3501034A1 (en) 2019-06-26

Similar Documents

Publication Publication Date Title
KR101773219B1 (ko) 레이저 어닐 방법, 장치 및 마이크로렌즈 어레이
TWI543833B (zh) 將半導體基板輻射開槽之方法
US10651294B2 (en) Laser annealing method, laser annealing apparatus, and manufacturing process for thin film transistor
US10211343B2 (en) Thin film transistor, manufacturing process for thin film transistor, and laser annealing apparatus
CN102665999B (zh) 激光加工方法
US8802580B2 (en) Systems and methods for the crystallization of thin films
US8999865B2 (en) Laser annealing apparatus and laser annealing method
US20130201634A1 (en) Single-scan line-scan crystallization using superimposed scanning elements
TWI765905B (zh) 用於半導體材料層退火之裝置，半導體材料層退火之方法，及平面顯示器
KR20120101087A (ko) 비주기적인 펄스 순차 측면 고상화를 위한 시스템 및 방법
TWI869437B (zh) 雷射退火裝置及雷射退火方法
JP6761479B2 (ja) レーザ照射装置、薄膜トランジスタおよび薄膜トランジスタの製造方法
CN110998795A (zh) 激光照射装置、薄膜晶体管的制造方法及投影掩模
JP2019532494A5 (enExample)
US10840095B2 (en) Laser irradiation device, thin-film transistor and thin-film transistor manufacturing method
KR20100138312A (ko) 레이저 가공장치 및 이를 이용한 다층기판 가공방법
WO2018074282A1 (ja) レーザアニール方法およびレーザアニール装置
JP5348850B2 (ja) ビーム照射装置
JP2008060314A (ja) レーザアニール装置、レーザアニール方法、及び半導体装置の製造方法
US20250006498A1 (en) Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device
KR20210071960A (ko) 레이저 어닐 장치 및 레이저 어닐 방법