JP2019532494A - 半導体材料の層をアニール処理するための装置、半導体材料の層をアニール処理する方法およびフラットパネルディスプレイ - Google Patents

半導体材料の層をアニール処理するための装置、半導体材料の層をアニール処理する方法およびフラットパネルディスプレイ Download PDF

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JP2019532494A
JP2019532494A JP2019510894A JP2019510894A JP2019532494A JP 2019532494 A JP2019532494 A JP 2019532494A JP 2019510894 A JP2019510894 A JP 2019510894A JP 2019510894 A JP2019510894 A JP 2019510894A JP 2019532494 A JP2019532494 A JP 2019532494A
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semiconductor material
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layer
beams
regions
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トーマス ラムズビー，フィリップ
トーマス ラムズビー，フィリップ
トーマス エドゥモンド マイルズ，デービッド
トーマス エドゥモンド マイルズ，デービッド
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M Solv Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/2636—Bombardment with radiation with high-energy radiation for heating, e.g. electron beam heating
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
    • B23K26/0676—Dividing the beam into multiple beams, e.g. multifocusing into dependently operating sub-beams, e.g. an array of spots with fixed spatial relationship or for performing simultaneously identical operations
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
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    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/42—Bombardment with radiation
    • H01L21/423—Bombardment with radiation with high-energy radiation
    • H01L21/428—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters

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  • Electromagnetism (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP2019510894A 2016-08-22 2017-08-16 半導体材料の層をアニール処理するための装置、半導体材料の層をアニール処理する方法およびフラットパネルディスプレイ Withdrawn JP2019532494A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
GB1614342.2 2016-08-22
GBGB1614342.2A GB201614342D0 (en) 2016-08-22 2016-08-22 An apparatus for annealing a layer of amorphous silicon, a method of annealing a layer of amorphous silicon, and a flat panel display
GB1700800.4 2017-01-17
GB1700800.4A GB2553162B (en) 2016-08-22 2017-01-17 An apparatus for annealing a layer of amorphous silicon, a method of annealing a layer of amorphous silicon, and a flat panel display
PCT/GB2017/052423 WO2018037211A1 (en) 2016-08-22 2017-08-16 An apparatus for annealing a layer of semiconductor material, a method of annealing a layer of semiconductor material, and a flat panel display

Publications (2)

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JP2019532494A true JP2019532494A (ja) 2019-11-07
JP2019532494A5 JP2019532494A5 (enExample) 2020-09-03

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JP2019510894A Withdrawn JP2019532494A (ja) 2016-08-22 2017-08-16 半導体材料の層をアニール処理するための装置、半導体材料の層をアニール処理する方法およびフラットパネルディスプレイ

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US (1) US20190181009A1 (enExample)
EP (1) EP3501034A1 (enExample)
JP (1) JP2019532494A (enExample)
KR (1) KR20190040036A (enExample)
CN (1) CN109643644A (enExample)
GB (2) GB201614342D0 (enExample)
TW (1) TWI765905B (enExample)
WO (1) WO2018037211A1 (enExample)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
JP2022188207A (ja) * 2017-07-26 2022-12-20 エンゼルグループ株式会社 遊技用代用貨幣、遊技用代用貨幣の製造方法、及び検査システム

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Publication number Priority date Publication date Assignee Title
US11384425B2 (en) * 2017-07-13 2022-07-12 Purdue Research Foundation Method of enhancing electrical conduction in gallium-doped zinc oxide films and films made therefrom
CN116635978A (zh) 2021-10-30 2023-08-22 长江存储科技有限责任公司 用于半导体器件中的半导体层的热处理的方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3477969B2 (ja) * 1996-01-12 2003-12-10 セイコーエプソン株式会社 アクティブマトリクス基板の製造方法及び液晶表示装置
JP2000111950A (ja) * 1998-10-06 2000-04-21 Toshiba Corp 多結晶シリコンの製造方法
US6451631B1 (en) * 2000-08-10 2002-09-17 Hitachi America, Ltd. Thin film crystal growth by laser annealing
JP3903761B2 (ja) * 2001-10-10 2007-04-11 株式会社日立製作所 レ−ザアニ−ル方法およびレ−ザアニ−ル装置
EP1478970A1 (en) * 2002-02-25 2004-11-24 Orbotech Ltd. Method for manufacturing flat panel display substrates
JP2005191173A (ja) * 2003-12-25 2005-07-14 Hitachi Ltd 表示装置及びその製造方法
JP4838982B2 (ja) * 2004-01-30 2011-12-14 株式会社 日立ディスプレイズ レーザアニール方法およびレーザアニール装置
US7199397B2 (en) * 2004-05-05 2007-04-03 Au Optronics Corporation AMOLED circuit layout
JP2006135192A (ja) * 2004-11-08 2006-05-25 Sharp Corp 半導体デバイスの製造方法と製造装置
JP2007214527A (ja) * 2006-01-13 2007-08-23 Ihi Corp レーザアニール方法およびレーザアニール装置
JP5030524B2 (ja) * 2006-10-05 2012-09-19 株式会社半導体エネルギー研究所 レーザアニール方法及びレーザアニール装置
DE102008045533B4 (de) * 2008-09-03 2016-03-03 Innovavent Gmbh Verfahren und Vorrichtung zum Ändern der Struktur einer Halbleiterschicht
US7964453B2 (en) * 2009-05-15 2011-06-21 Potomac Photonics, Inc. Method and system for spatially selective crystallization of amorphous silicon
JP5471046B2 (ja) * 2009-06-03 2014-04-16 株式会社ブイ・テクノロジー レーザアニール方法及びレーザアニール装置
WO2013172965A1 (en) * 2012-05-14 2013-11-21 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
JP5918118B2 (ja) * 2012-12-18 2016-05-18 株式会社日本製鋼所 結晶半導体膜の製造方法
CN104956466B (zh) * 2012-12-31 2018-03-02 恩耐公司 用于低温多晶硅结晶的短脉冲光纤激光器
EP2966671B1 (en) * 2013-03-07 2022-08-31 Mitsubishi Electric Corporation Laser annealing device, and method of producing semiconductor device
WO2015127031A1 (en) * 2014-02-19 2015-08-27 The Trustees Of Columbia University In The City Of New York Sequential laser firing for thin film processing

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022188207A (ja) * 2017-07-26 2022-12-20 エンゼルグループ株式会社 遊技用代用貨幣、遊技用代用貨幣の製造方法、及び検査システム

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GB201614342D0 (en) 2016-10-05
GB2553162A (en) 2018-02-28
GB201700800D0 (en) 2017-03-01
TWI765905B (zh) 2022-06-01
KR20190040036A (ko) 2019-04-16
GB2553162B (en) 2020-09-16
CN109643644A (zh) 2019-04-16
TW201812919A (zh) 2018-04-01
WO2018037211A1 (en) 2018-03-01
US20190181009A1 (en) 2019-06-13
EP3501034A1 (en) 2019-06-26

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