JP2019528467A - フレキシブル表示基板及びその製造方法 - Google Patents
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- 239000000758 substrate Substances 0.000 title claims abstract description 90
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 576
- 239000002184 metal Substances 0.000 claims abstract description 576
- 239000002131 composite material Substances 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 28
- 239000004020 conductor Substances 0.000 claims abstract description 25
- 239000000463 material Substances 0.000 claims abstract description 17
- 230000008569 process Effects 0.000 claims description 6
- -1 polyethylene terephthalate Polymers 0.000 claims description 5
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 239000004695 Polyether sulfone Substances 0.000 claims description 4
- 239000004697 Polyetherimide Substances 0.000 claims description 4
- 239000004642 Polyimide Substances 0.000 claims description 4
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229920000515 polycarbonate Polymers 0.000 claims description 4
- 239000004417 polycarbonate Substances 0.000 claims description 4
- 229920006393 polyether sulfone Polymers 0.000 claims description 4
- 229920001601 polyetherimide Polymers 0.000 claims description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 4
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910000838 Al alloy Inorganic materials 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 150000002148 esters Chemical class 0.000 claims 1
- 230000006866 deterioration Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 10
- 239000003990 capacitor Substances 0.000 description 5
- 229920000058 polyacrylate Polymers 0.000 description 3
- 238000005553 drilling Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
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Abstract
Description
Claims (14)
- フレキシブル基材を含むフレキシブル表示基板であって、前記フレキシブル基材上には少なくとも1つの導電複合層が設けられ、前記導電複合層は、2つの金属層と前記2つの金属層の間に位置する絶縁層とを含み、前記2つの金属層の各々は、離間して配置された金属線セグメントを含み、前記絶縁層には接触孔が開設され、前記2つの金属層の金属線セグメントは、前記接触孔内の金属を介して接続されて、連続的な金属導線を形成する、ことを特徴とするフレキシブル表示基板。
- 前記2つの金属層の各々は、同一又は類似の延在方向を有し、且つ離間して配置された金属線セグメントを含む、ことを特徴とする請求項1に記載のフレキシブル表示基板。
- 前記少なくとも1つの導電複合層の各導電複合層における2つの金属層の金属線セグメントは互いにずらして設けられる、ことを特徴とする請求項1又は2に記載のフレキシブル表示基板。
- 前記少なくとも1つの導電複合層は、下層の導電複合層とその隣接する上層の導電複合層とを含み、前記下層の導電複合層と前記上層の導電複合層とは金属層を共用する、ことを特徴とする請求項1〜3のいずれか一項に記載のフレキシブル表示基板。
- 異なる金属層における金属線セグメントの密度が異なる、ことを特徴とする請求項1〜4のいずれか一項に記載のフレキシブル表示基板。
- 前記導電複合層は第1金属層及び第2金属層を含み、前記接触孔内の金属の一端は、第1金属層の金属線セグメントのヘッド部又はテール部に接続され、前記接触孔内の金属の他端は、第2金属層の金属線セグメントのテール部又はヘッド部に接続され、前記第1金属層の金属線セグメントの密度は、前記第2金属層の金属線セグメントの密度より高い、ことを特徴とする請求項1〜5のいずれか一項に記載のフレキシブル表示基板。
- 前記導電複合層は、第1金属層、第2金属層及び第3金属層を含み、前記第2金属層における金属線セグメントは、離間して配置された第1金属線セグメントと第3金属線セグメントとを含み、
第1金属層と第2金属層との間の接触孔内の金属の一端は、第1金属層の金属線セグメントのヘッド部又はテール部に接続され、接触孔内の金属の他端は、第2金属層の第1金属線セグメントのテール部又はヘッド部に接続され、前記第1金属層の金属線セグメントの密度は、前記第2金属層の第1金属線セグメントの密度より高く、及び/又は、
第3金属層と第2金属層との間の接触孔内の金属の一端は、第3金属層の金属線セグメントのヘッド部又はテール部に接続され、接触孔内の金属の他端は、第2金属層の第3金属線セグメントのテール部又はヘッド部に接続され、前記第3金属層の金属線セグメントの密度は、前記第2金属層の第3金属線セグメントの密度より高い、ことを特徴とする請求項1〜5のいずれか一項に記載のフレキシブル表示基板。 - 前記導電複合層は、第1金属層、第2金属層及び第3金属層を含み、
第1金属層と第2金属層との間の接触孔内の金属の一端は、第1金属層の金属線セグメントのヘッド部又はテール部に接続され、接触孔内の金属の他端は、第2金属層の金属線セグメントのテール部又はヘッド部に接続され、
第2金属層と第3金属層との間の接触孔内の金属の一端は、第2金属層の金属線セグメントのヘッド部又はテール部に接続され、接触孔内の金属の他端は、第3金属層の金属線セグメントのテール部又はヘッド部に接続され、
前記第1金属層の金属線セグメントの密度は、前記第2金属層の金属線セグメントの密度より高く、前記第3金属層の金属線セグメントの密度は、前記第2金属層の金属線セグメントの密度より高く、前記第1金属層の金属線セグメントの密度は、前記第3金属層の金属線セグメントの密度より低い、ことを特徴とする請求項1〜5のいずれか一項に記載のフレキシブル表示基板。 - 前記連続的な金属導線は、データ線又はゲート線として使用される、ことを特徴とする請求項1〜8のいずれか一項に記載のフレキシブル表示基板。
- 前記金属線は、アルミニウム、チタン、モリブデン又はアルミニウム合金、チタン合金、モリブデン合金の中の1つの材料からなる、ことを特徴とする請求項1〜9のいずれか一項に記載のフレキシブル表示基板。
- 前記絶縁層は、ケイ素窒化物又はシリコン酸化物からなる、ことを特徴とする請求項1〜10のいずれか一項に記載のフレキシブル表示基板。
- 前記フレキシブル基材の材料は、ポリイミド、ポリカーボネート、ポリアクリル酸エステル、ポリエーテルイミド、ポリエーテルスルホン又はポリエチレンテレフタレートの中の一つである、ことを特徴とする請求項1〜11のいずれか一項に記載のフレキシブル表示基板。
- フレキシブル表示基板の製造方法であって、
フレキシブル基材を製造するステップと、
前記フレキシブル基材上に複数の絶縁層と複数の金属層とを交互に配置するステップと、を含み、
前記複数の絶縁層と前記複数の金属層とを配置するプロセスにおいて、
前記複数の金属層の隣接する金属層間の絶縁層上に接触孔を設け、前記接触孔内に金属を充填するステップと、
前記複数の金属層の各金属層において、同一又は類似の延在方向を有する金属線セグメントを離間して配置するステップと、
接触孔内の金属により、前記隣接する金属層の金属線セグメントを交互に接続して連続的な金属導線を形成するステップとを更に行う、ことを特徴するとするフレキシブル表示基板の製造方法。 - フレキシブル基材を製造するステップと、
前記フレキシブル基材上に第1絶縁層を形成するステップと、
前記第1絶縁層上に第1金属層を形成し、前記第1金属層において、同一又は類似の延在方向を有する金属線セグメントを離間して配置するステップと、
前記第1金属層上に第2絶縁層を形成し、前記第2絶縁層上に接触孔を設け、接触孔内に金属を充填するステップと、
前記第2絶縁層上に第2金属層を形成し、前記第2金属層において、同一又は類似の延在方向を有する金属線セグメントを離間して配置し、接触孔内の金属の一端を第1金属層の金属線セグメントのヘッド部又はテール部に接続し、前記接触孔内の金属の他端を第2金属層の金属線セグメントのテール部又はヘッド部に接続するステップとを含む、請求項13に記載のフレキシブル表示基板。
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