CN106206613A - 一种柔性显示基板及其制备方法 - Google Patents

一种柔性显示基板及其制备方法 Download PDF

Info

Publication number
CN106206613A
CN106206613A CN201610715972.8A CN201610715972A CN106206613A CN 106206613 A CN106206613 A CN 106206613A CN 201610715972 A CN201610715972 A CN 201610715972A CN 106206613 A CN106206613 A CN 106206613A
Authority
CN
China
Prior art keywords
metal
contact hole
wire sections
metal wire
insulating barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201610715972.8A
Other languages
English (en)
Other versions
CN106206613B (zh
Inventor
袁波
刘玉成
高胜
徐琳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kunshan New Flat Panel Display Technology Center Co Ltd
Original Assignee
Kunshan New Flat Panel Display Technology Center Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kunshan New Flat Panel Display Technology Center Co Ltd filed Critical Kunshan New Flat Panel Display Technology Center Co Ltd
Priority to CN201610715972.8A priority Critical patent/CN106206613B/zh
Publication of CN106206613A publication Critical patent/CN106206613A/zh
Priority to EP17842814.0A priority patent/EP3477702B1/en
Priority to JP2019503725A priority patent/JP6824384B2/ja
Priority to PCT/CN2017/097007 priority patent/WO2018036391A1/zh
Priority to KR1020197002234A priority patent/KR102258467B1/ko
Priority to TW106128063A priority patent/TWI638589B/zh
Priority to US16/317,417 priority patent/US11152401B2/en
Application granted granted Critical
Publication of CN106206613B publication Critical patent/CN106206613B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/131Interconnections, e.g. wiring lines or terminals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H01L27/1244Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841Barrier, adhesion or liner layers
    • H01L21/76843Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76846Layer combinations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841Barrier, adhesion or liner layers
    • H01L21/76843Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76847Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned within the main fill metal
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841Barrier, adhesion or liner layers
    • H01L21/7685Barrier, adhesion or liner layers the layer covering a conductive structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/4985Flexible insulating substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259Multistep manufacturing methods
    • H01L27/1262Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259Multistep manufacturing methods
    • H01L27/127Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10Substrates, e.g. flexible substrates
    • H10K77/111Flexible substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301Details of OLEDs
    • H10K2102/311Flexible OLED
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Laminated Bodies (AREA)

Abstract

本发明提供了一种柔性显示基板,能够有效地释放累积在金属线和绝缘层中的应力,减小了柔性屏体弯曲过程中金属线和绝缘层断裂的几率;本发明还提供了一种柔性显示基板的制备方法,能够防止柔性显示屏的老化,延长其寿命。本发明提供的柔性显示基板包括柔性衬底,所述柔性衬底上交替设置绝缘层和金属层,所述金属层包括相同或相近延伸方向分隔设置的金属线段,相邻金属层间的绝缘层上开设接触孔,相邻金属层的金属线段通过接触孔中的金属交替连接,形成连续的金属导线。

Description

一种柔性显示基板及其制备方法
技术领域
本发明涉及显示技术领域,具体涉及一种柔性显示基板及其制备方法。
背景技术
柔性显示器作为新一代的显示产品,由于其具有超轻、超薄、清晰度高、响应快、可弯曲、携带方便等优点,受到人们越来越多的广泛关注。
柔性显示器在使用时需要卷起或者弯曲,甚至频繁弯折,这样其发生形变产生的应力会累积和叠加到显示基板内的金属线和绝缘层上,就会出现金属线断裂的现象,同时多次弯曲之后也会使得绝缘层面临断裂的危险,导致无法正常显示,严重影响柔性显示器的使用寿命。
为解决上述技术问题,业内主要是通过在金属线上设置一些孔洞或是改变金属线的图形(如矩形、波浪形等)等方法以释放应力。这些方法虽能够增加金属线的使用次数,延长显示器的使用寿命,但由于在金属线打孔或是改变金属线的图形对于光刻设备的要求都比较高,加大了工艺难度。
现有技术中有些也公开了采用柔性较好、易于弯曲的材料(例如石墨烯或纳米银等)来替代金属层的钼、钛或铜的方法,来形成显示基板的金属线。该方法虽能够延长金属线的使用次数,提高显示器的可靠性,但由于材料的限制,成本较高,而且替代材料的使用也会使得柔性基板的结构和制备工艺等都会发生明显的变化,无法通过现有的设备和工艺实现。
另外,上述方法都只是针对金属线断裂采取的改进措施,采用这些措施后,由于绝缘层仍是连续的,所以上述方法并不能有效地释放累积在绝缘层中的应力以解决绝缘层易断裂的技术问题。
发明内容
有鉴于此,本发明实施例提供了一种柔性显示基板,能够有效地释放累积在金属线和绝缘层中的应力,减小了柔性屏体弯曲过程中金属线和绝缘层断裂的几率;本发明还提供了一种柔性显示基板的制备方法,能够防止柔性显示屏的老化,延长其寿命。
本发明实施例提供的一种柔性显示基板,包括柔性衬底,所述柔性衬底上交替设置绝缘层和金属层,所述金属层包括相同或相近延伸方向分隔设置的金属线段,相邻金属层间的绝缘层上开设接触孔,相邻金属层的金属线段通过接触孔中的金属交替连接,形成连续的金属导线;
其中,所述相邻金属层包括第一金属层和第二金属层,所述接触孔中的金属一端连接在第一金属层的金属线段的头部或尾部,所述接触孔中的金属另一端连接在第二金属层的金属线段的尾部或头部;
其中,所述相邻金属层包括第一金属层、第二金属层和第三金属层,其中,所述第二金属层中的金属线段包括间隔设置的第一金属线段和第三金属线段;第一金属层和第二金属层间的接触孔中的金属一端连接在第一金属层的金属线段的头部或尾部,接触孔中的金属另一端连接在第二金属层的第一金属线段的尾部或头部;第三金属层和第二金属层间的接触孔中的金属一端连接在第三金属层的金属线段的头部或尾部,接触孔中的金属另一端连接在第二金属层的第三金属线段的尾部或头部;
其中,所述相邻金属层包括第一金属层、第二金属层和第三金属层;第一金属层和第二金属层间的接触孔中的金属一端连接在第一金属层的金属线段的头部或尾部,接触孔中的金属另一端连接在第二金属层的金属线段的尾部或头部;第二金属层和第三金属层间的接触孔中的金属一端连接在第二金属层的金属线段的头部或尾部,接触孔中的金属另一端连接在第三金属层的金属线段的尾部或头部;
其中,所述连续的金属导线用作数据线或栅极线;
其中,所述金属线由铝、钛、钼或者铝合金、钛合金、钼合金中的一种材料制成;
其中,所述绝缘层由氮化硅或者氧化硅制成;
其中,所述柔性衬底的材料为聚酰亚胺、聚碳酸酯、聚丙烯酸酯、聚醚酰亚胺、聚醚砜或聚对苯二甲酸乙二醇酯中的至少一种。
本发明实施例提供的一种柔性显示基板的制备方法,包括:制备柔性衬底;在所述柔性衬底上交替设置绝缘层和金属层;在相邻金属层间的绝缘层上设置接触孔,接触孔中容纳金属;在所述金属层分隔设置相同或相近延伸方向的金属线段;接触孔中的金属将相邻金属层的金属线段进行交替连接,形成连续的金属导线;
其中,所述的柔性显示基板的制备方法,包括:制备柔性衬底;在所述柔性衬底上形成第一绝缘层;在所述第一绝缘层上形成第一金属层,在所述第一金属层分隔设置相同或相近延伸方向的金属线段;在所述第一金属层上形成第二绝缘层,在所述第二绝缘层上设置接触孔,接触孔中容纳金属;在所述第二绝缘层上形成第二金属层,在所述第二金属层分隔设置相同或相近延伸方向的金属线段,将接触孔中的金属一端连接在第一金属层的金属线段的头部或尾部,所述接触孔中的金属另一端连接在第二金属层的金属线段的尾部或头部。
本发明实施例提供的柔性显示基板,不同金属层中的金属线段相互交替连接,形成排布在多层金属层中、具有折线结构的连续金属导线和多个相对独立的绝缘层块,有效地释放了累积在金属线中的应力,减小了柔性屏体弯曲过程中金属线和绝缘层断裂的几率;本发明实施例提供的柔性显示基板的制备方法,利用接触孔将多层金属层中的金属线段进行交替连接,形成排布在多层金属层中、具有折线结构的连续金属导线和多个相对独立的绝缘层块,防止了柔性显示屏的老化,延长了其使用寿命。
附图说明
图1所示为本发明一实施例提供的一种柔性显示基板的结构示意图。
图2所示为本发明另一实施例提供的一种柔性显示基板的结构示意图。
图3所示为本发明再一实施例提供的一种柔性显示基板的结构示意图。
图4所示为本发明一实施例提供的一种柔性显示基板的制备方法的流程示意图。
图5所示为本发明另一实施例提供的一种柔性显示基板的制备方法的流程示意图。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
如图1~2所示,本发明实施例提供的柔性显示基板,包括柔性衬底1,在该柔性衬底1上交替设有绝缘层和金属层,金属层包括相同或相近延伸方向分隔设置的金属线段,相邻金属层间的绝缘层上开设接触孔6,相邻金属层的金属线段通过接触孔6中的金属交替连接,形成连续的金属导线。
其中,图1所示为本发明一实施例提供的柔性显示基板的结构示意图。如图1所示,该柔性显示基板包括柔性衬底1,在柔性衬底1上依次设置有第一绝缘层2、第一金属层3、第二绝缘层4以及第二金属层5,第一金属层3和第二金属层5中分别包括相同或相近延伸方向的分隔设置的金属线段,接触孔6中的金属一端连接在第一金属层3的金属线段的头部或尾部,接触孔6中的金属另一端连接在第二金属层5的金属线段的尾部或头部。
本实施例提供的柔性显示基板,分布在两层金属层中的金属线段通过接触孔交替连接,形成排布在上下两层金属层中、具有折线结构的连续金属导线,同时完整的第二绝缘层4也被用于连接上下金属层的接触孔6分成若干相对独立的绝缘层块,能够有效地释放累积在金属线中的应力,减小了柔性屏体弯曲过程中金属线和绝缘层断裂的几率。
图2所示为本发明另一实施例提供的柔性显示基板的结构示意图。如图2所示,该柔性显示基板在柔性衬底1上依次设置有第一绝缘层2、第一金属层3、第二绝缘层4、第二金属层5、第三绝缘层7以及第三金属层8,第一金属层3、第二金属层5和第三金属层8中均包括相同或相近延伸方向分隔设置的金属线段,其中,第二金属层5中的金属线段包括间隔设置的第一金属线段9和第三金属线段10;第二绝缘层4的接触孔6中的金属一端连接在第一金属层3的金属线段的头部或尾部,接触孔6中的金属另一端连接在第一金属线段9的尾部或头部;第三绝缘层7的接触孔6中的金属一端连接在第三金属层8的金属线段的头部或尾部,接触孔6中的金属另一端连接在第三金属线段10的尾部或头部。
本实施例提供的柔性显示基板,第二金属层5中的一部分金属线段与第一金属层3中的金属线段连接,形成交替排布在中下两层金属层中、具有折线结构的连续金属导线,第二金属层5中的另一部分金属线段与第三金属层8中的金属线段连接,形成交替排布在上中两层金属层中、具有折线结构的连续金属导线,同时第二绝缘层4与第三绝缘层7也被分成若干相对独立的绝缘层块,减小了柔性屏体弯曲过程中金属线和绝缘层断裂的几率。
图3所示为本发明再一实施例提供的柔性显示基板的结构示意图。如图3所示,本实施例的柔性显示基板,同样地,在柔性衬底1上依次设置有第一绝缘层2、第一金属层3、第二绝缘层4、第二金属层5、第三绝缘层7以及第三金属层8,第一金属层3、第二金属层5和第三金属层8中均包括相同或相近延伸方向分隔设置的金属线段,与上述实施例不同的是金属线段的连接方式,本实施例中,第一金属层3与第三金属层8中的金属线段通过第二金属层5中的金属线段也形成连接,即:第二绝缘层4的接触孔6中的金属一端连接在第一金属层3的金属线段的头部或尾部,接触孔6中的金属另一端连接在第二金属层5的金属线段的尾部或头部,第三绝缘层7的接触孔6中的金属一端连接在第二金属层5的金属线段的头部或尾部,接触孔6中的金属另一端连接在第三金属层8的金属线段的尾部或头部,整体便形成了交替排布在上中下三层金属层中、具有折线结构的连续金属导线和多个相对独立的绝缘层块。
本领域的技术人员不难理解,上述实施例只是本发明所列举的示例而已,操作人员可根据对分辨率或者其他方面的实际需求,来设计不同数目的绝缘层、金属层以及金属线段,也可以选择不同的金属线段连接方式,本发明对此不做具体限定。
在本发明一实施例中,连续的金属导线可用作数据线或栅极线,当然,金属线也可用作承载其他信息的信号线,其材料可以为铝、钛、钼等金属,也可以为铝合金、钛合金、钼合金等合金中的一种,本发明对此不做具体限定。
在本发明一实施例中,绝缘层为氮化硅或者氧化硅中的一种,本发明对此不作具体限定。
在本发明一实施例中,柔性衬底1的材料可以为聚酰亚胺、聚碳酸酯、聚丙烯酸酯、聚醚酰亚胺、聚醚砜或聚对苯二甲酸乙二醇酯中的至少一种,本发明对此不作具体限定。
本发明实施例还提供了一种柔性显示基板的制备方法。图4所示为本实施例提供的柔性显示基板制备方法的流程图,如图4所示,该方法包括如下步骤:
步骤101:制备柔性衬底1;
其中,柔性衬底1的材料可以为聚酰亚胺、聚碳酸酯、聚丙烯酸酯、聚醚酰亚胺、聚醚砜或聚对苯二甲酸乙二醇酯中的至少一种,本发明对此不作具体限定。
步骤102:在柔性衬底1上交替设置绝缘层和金属层。
步骤103:在相邻金属层间的绝缘层上设置接触孔6,接触孔6中容纳金属。
步骤104:在金属层分隔设置相同或相近延伸方向的金属线段。
步骤105:接触孔6中的金属将相邻金属层的金属线段进行交替连接,形成连续的金属导线。
图5所示为本发明另一实施例提供的柔性显示基板制备方法的流程图,如图5所示,该方法包括如下步骤:
步骤201:制备柔性衬底1。
步骤202:在柔性衬底1上形成第一绝缘层2。
步骤203:在第一绝缘层2上形成第一金属层3,在第一金属层3分隔设置相同或相近延伸方向的金属线段。
步骤204:在第一金属层3上形成第二绝缘层4,在第二绝缘层4上设置接触孔6,接触孔6中容纳金属。
步骤205:在第二绝缘层4上形成第二金属层5,在第二金属层4分隔设置相同或相近延伸方向的金属线段,将接触孔6中的金属一端连接在第一金属层3的金属线段的头部或尾部,接触孔6中的金属另一端连接在第二金属层5的金属线段的尾部或头部。
在本发明一实施例中,金属层通过光刻刻蚀工艺形成,在另一实施例中,金属层还可通过打印、喷墨、物理气相沉积法等工艺形成,本发明对此不作具体限定。
很显然,本领域的技术人员在此制备方法的基础上,结合上述柔性显示基板的实施例,能够推导出采用更多金属层及选用不同连接方式时的制备方法,本发明对此不进行赘述。
本发明实施例提供的柔性显示基板,不同金属层中的金属线段相互交替连接,形成排布在多层金属层中、具有折线结构的连续金属导线和多个相对独立的绝缘层块,能够有效地释放累积在金属线中的应力,减小了柔性屏体弯曲过程中金属线和绝缘层断裂的几率;本发明实施例提供的柔性显示基板的制备方法,利用接触孔将多层金属层中的金属线段交替连接,形成排布在多层金属层中、具有折线结构的连续金属导线和多个相对独立的绝缘层块,防止了柔性显示屏的老化,延长了其使用寿命。
以上所述仅为本发明的较佳实施例而已,并不用以限制本发明,凡在本发明的精神和原则之内,所作的任何修改、等同替换等,均应包含在本发明的保护范围之内。

Claims (10)

1.一种柔性显示基板,包括柔性衬底,其特征在于,所述柔性衬底上交替设置绝缘层和金属层,所述金属层包括相同或相近延伸方向分隔设置的金属线段,相邻金属层间的绝缘层上开设接触孔,相邻金属层的金属线段通过接触孔中的金属交替连接,形成连续的金属导线。
2.根据权利要求1所述的柔性显示基板,其特征在于,所述相邻金属层包括第一金属层和第二金属层,所述接触孔中的金属一端连接在第一金属层的金属线段的头部或尾部,所述接触孔中的金属另一端连接在第二金属层的金属线段的尾部或头部。
3.根据权利要求1所述的柔性显示基板,其特征在于,所述相邻金属层包括第一金属层、第二金属层和第三金属层,其中,所述第二金属层中的金属线段包括间隔设置的第一金属线段和第三金属线段;
第一金属层和第二金属层间的接触孔中的金属一端连接在第一金属层的金属线段的头部或尾部,接触孔中的金属另一端连接在第二金属层的第一金属线段的尾部或头部;
第三金属层和第二金属层间的接触孔中的金属一端连接在第三金属层的金属线段的头部或尾部,接触孔中的金属另一端连接在第二金属层的第三金属线段的尾部或头部。
4.根据权利要求1所述的柔性显示基板,其特征在于,所述相邻金属层包括第一金属层、第二金属层和第三金属层;
第一金属层和第二金属层间的接触孔中的金属一端连接在第一金属层的金属线段的头部或尾部,接触孔中的金属另一端连接在第二金属层的金属线段的尾部或头部;
第二金属层和第三金属层间的接触孔中的金属一端连接在第二金属层的金属线段的头部或尾部,接触孔中的金属另一端连接在第三金属层的金属线段的尾部或头部。
5.根据权利要求1所述的柔性显示基板,其特征在于,所述连续的金属导线用作数据线或栅极线。
6.根据权利要求1所述的柔性显示基板,其特征在于,所述金属线由铝、钛、钼或者铝合金、钛合金、钼合金中的一种材料制成。
7.根据权利要求1所述的柔性显示基板,其特征在于,所述绝缘层由氮化硅或者氧化硅制成。
8.根据权利要求1所述的柔性显示基板,其特征在于,所述柔性衬底的材料为聚酰亚胺、聚碳酸酯、聚丙烯酸酯、聚醚酰亚胺、聚醚砜或聚对苯二甲酸乙二醇酯中的至少一种。
9.一种柔性显示基板的制备方法,其特征在于,包括:
制备柔性衬底;
在所述柔性衬底上交替设置绝缘层和金属层;
在相邻金属层间的绝缘层上设置接触孔,接触孔中容纳金属;
在所述金属层分隔设置相同或相近延伸方向的金属线段;
接触孔中的金属将相邻金属层的金属线段进行交替连接,形成连续的金属导线。
10.根据权利要求9所述的柔性显示基板,其特征在于,包括:
制备柔性衬底;
在所述柔性衬底上形成第一绝缘层;
在所述第一绝缘层上形成第一金属层,在所述第一金属层分隔设置相同或相近延伸方向的金属线段;
在所述第一金属层上形成第二绝缘层,在所述第二绝缘层上设置接触孔,接触孔中容纳金属;
在所述第二绝缘层上形成第二金属层,在所述第二金属层分隔设置相同或相近延伸方向的金属线段,将接触孔中的金属一端连接在第一金属层的金属线段的头部或尾部,所述接触孔中的金属另一端连接在第二金属层的金属线段的尾部或头部。
CN201610715972.8A 2016-08-24 2016-08-24 一种柔性显示基板及其制备方法 Active CN106206613B (zh)

Priority Applications (7)

Application Number Priority Date Filing Date Title
CN201610715972.8A CN106206613B (zh) 2016-08-24 2016-08-24 一种柔性显示基板及其制备方法
EP17842814.0A EP3477702B1 (en) 2016-08-24 2017-08-11 Flexible display substrate and preparation method therefor
JP2019503725A JP6824384B2 (ja) 2016-08-24 2017-08-11 フレキシブル表示基板及びその製造方法
PCT/CN2017/097007 WO2018036391A1 (zh) 2016-08-24 2017-08-11 一种柔性显示基板及其制备方法
KR1020197002234A KR102258467B1 (ko) 2016-08-24 2017-08-11 플렉서블 표시 기판 및 그 제조 방법
TW106128063A TWI638589B (zh) 2016-08-24 2017-08-18 Flexible display substrate and preparation method thereof
US16/317,417 US11152401B2 (en) 2016-08-24 2019-01-11 Flexible display substrate and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610715972.8A CN106206613B (zh) 2016-08-24 2016-08-24 一种柔性显示基板及其制备方法

Publications (2)

Publication Number Publication Date
CN106206613A true CN106206613A (zh) 2016-12-07
CN106206613B CN106206613B (zh) 2020-12-29

Family

ID=57523612

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610715972.8A Active CN106206613B (zh) 2016-08-24 2016-08-24 一种柔性显示基板及其制备方法

Country Status (7)

Country Link
US (1) US11152401B2 (zh)
EP (1) EP3477702B1 (zh)
JP (1) JP6824384B2 (zh)
KR (1) KR102258467B1 (zh)
CN (1) CN106206613B (zh)
TW (1) TWI638589B (zh)
WO (1) WO2018036391A1 (zh)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106548979A (zh) * 2016-12-28 2017-03-29 武汉华星光电技术有限公司 层叠无机膜的蚀刻方法
CN106684115A (zh) * 2017-01-18 2017-05-17 昆山工研院新型平板显示技术中心有限公司 一种金属导线及柔性显示面板
WO2018036391A1 (zh) * 2016-08-24 2018-03-01 昆山工研院新型平板显示技术中心有限公司 一种柔性显示基板及其制备方法
CN107864555A (zh) * 2017-12-09 2018-03-30 中国电子科技集团公司第四十三研究所 一种柔性电路板
CN108281428A (zh) * 2017-01-06 2018-07-13 昆山工研院新型平板显示技术中心有限公司 一种金属线及柔性显示面板
CN108682303A (zh) * 2018-05-14 2018-10-19 云谷(固安)科技有限公司 柔性显示基板、柔性显示屏和电子终端设备
CN108694890A (zh) * 2017-04-05 2018-10-23 上海和辉光电有限公司 一种显示面板及显示装置
CN108695340A (zh) * 2017-04-05 2018-10-23 上海和辉光电有限公司 一种显示面板及显示装置
CN108922877A (zh) * 2018-06-29 2018-11-30 武汉华星光电半导体显示技术有限公司 显示面板
CN109031779A (zh) * 2018-07-25 2018-12-18 京东方科技集团股份有限公司 发光二极管基板、背光模组和显示装置
CN109545796A (zh) * 2018-09-30 2019-03-29 武汉华星光电技术有限公司 一种曲面阵列基板及其制备方法
CN109860253A (zh) * 2019-01-31 2019-06-07 上海天马有机发光显示技术有限公司 一种柔性显示面板及柔性显示装置
CN110797372A (zh) * 2018-08-01 2020-02-14 创王光电股份有限公司 可挠显示器
CN111667764A (zh) * 2020-06-28 2020-09-15 昆山国显光电有限公司 一种柔性显示面板及显示装置
CN114188387A (zh) * 2021-12-09 2022-03-15 深圳市华星光电半导体显示技术有限公司 柔性显示面板

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108831909B (zh) * 2018-06-07 2021-07-23 武汉华星光电半导体显示技术有限公司 柔性显示面板及显示装置
CN110957331A (zh) * 2019-12-26 2020-04-03 云谷(固安)科技有限公司 显示面板和显示装置

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040124763A1 (en) * 2002-02-18 2004-07-01 Arokia Nathan Flexible display device
CN101232013A (zh) * 2007-01-25 2008-07-30 奇美电子股份有限公司 有机发光显示元件及其制造方法
CN102231028A (zh) * 2011-04-13 2011-11-02 友达光电股份有限公司 引线结构以及具有此引线结构的显示面板
CN102945846A (zh) * 2012-09-28 2013-02-27 京东方科技集团股份有限公司 阵列基板及其制造方法、显示装置
CN104538426A (zh) * 2014-12-26 2015-04-22 昆山工研院新型平板显示技术中心有限公司 柔性显示装置及其制造方法
CN104769719A (zh) * 2012-11-16 2015-07-08 苹果公司 柔性显示器
CN105144418A (zh) * 2013-02-01 2015-12-09 乐金显示有限公司 柔性显示基板、柔性有机发光显示装置及其制造方法
US20160179229A1 (en) * 2014-12-22 2016-06-23 Lg Display Co., Ltd. Flexible Organic Light Emitting Diode Display Device
CN105786237A (zh) * 2015-01-09 2016-07-20 三星显示有限公司 柔性触摸面板和柔性显示设备
CN105826350A (zh) * 2015-01-28 2016-08-03 三星显示有限公司 显示装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05150263A (ja) * 1991-11-29 1993-06-18 Toshiba Corp アクテイブマトリツクス型液晶表示素子
DE60232134D1 (de) * 2001-02-16 2009-06-10 Ignis Innovation Inc Flexible anzeigevorrichtung
JP4452650B2 (ja) * 2005-05-31 2010-04-21 新光電気工業株式会社 配線基板およびその製造方法
KR100708735B1 (ko) 2005-12-09 2007-04-17 삼성에스디아이 주식회사 유기 발광 디스플레이 장치 및 그 제조방법
JP5471104B2 (ja) * 2009-07-15 2014-04-16 株式会社村田製作所 フレキシブル配線基板
WO2011064819A1 (ja) * 2009-11-27 2011-06-03 パナソニック株式会社 発光表示装置
KR101950473B1 (ko) * 2012-10-05 2019-02-21 삼성디스플레이 주식회사 플렉서블 디스플레이 패널
KR102066087B1 (ko) * 2013-05-28 2020-01-15 엘지디스플레이 주식회사 플렉서블 표시장치 및 그의 제조방법
JP6603015B2 (ja) * 2013-08-20 2019-11-06 株式会社半導体エネルギー研究所 表示装置
KR20150075367A (ko) * 2013-12-25 2015-07-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
WO2015132694A1 (en) * 2014-03-07 2015-09-11 Semiconductor Energy Laboratory Co., Ltd. Touch sensor, touch panel, and manufacturing method of touch panel
KR102214476B1 (ko) * 2014-03-17 2021-02-10 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
JP6253541B2 (ja) * 2014-07-30 2017-12-27 株式会社ジャパンディスプレイ 表示装置
KR102291865B1 (ko) * 2015-01-16 2021-08-20 삼성디스플레이 주식회사 가요성 표시 장치 및 그 제조 방법
KR102401013B1 (ko) * 2015-07-15 2022-05-24 삼성디스플레이 주식회사 플렉서블 디스플레이 장치 및 그 제조방법
CN205355054U (zh) * 2016-02-02 2016-06-29 昆山国显光电有限公司 显示器薄膜晶体管结构及显示器
CN106206613B (zh) * 2016-08-24 2020-12-29 昆山工研院新型平板显示技术中心有限公司 一种柔性显示基板及其制备方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040124763A1 (en) * 2002-02-18 2004-07-01 Arokia Nathan Flexible display device
CN101232013A (zh) * 2007-01-25 2008-07-30 奇美电子股份有限公司 有机发光显示元件及其制造方法
CN102231028A (zh) * 2011-04-13 2011-11-02 友达光电股份有限公司 引线结构以及具有此引线结构的显示面板
CN102945846A (zh) * 2012-09-28 2013-02-27 京东方科技集团股份有限公司 阵列基板及其制造方法、显示装置
CN104769719A (zh) * 2012-11-16 2015-07-08 苹果公司 柔性显示器
CN105144418A (zh) * 2013-02-01 2015-12-09 乐金显示有限公司 柔性显示基板、柔性有机发光显示装置及其制造方法
US20160179229A1 (en) * 2014-12-22 2016-06-23 Lg Display Co., Ltd. Flexible Organic Light Emitting Diode Display Device
CN104538426A (zh) * 2014-12-26 2015-04-22 昆山工研院新型平板显示技术中心有限公司 柔性显示装置及其制造方法
CN105786237A (zh) * 2015-01-09 2016-07-20 三星显示有限公司 柔性触摸面板和柔性显示设备
CN105826350A (zh) * 2015-01-28 2016-08-03 三星显示有限公司 显示装置

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018036391A1 (zh) * 2016-08-24 2018-03-01 昆山工研院新型平板显示技术中心有限公司 一种柔性显示基板及其制备方法
US11152401B2 (en) 2016-08-24 2021-10-19 Kunshan New Flat Panel Display Technology Center Co., Ltd. Flexible display substrate and preparation method thereof
CN106548979A (zh) * 2016-12-28 2017-03-29 武汉华星光电技术有限公司 层叠无机膜的蚀刻方法
CN108281428A (zh) * 2017-01-06 2018-07-13 昆山工研院新型平板显示技术中心有限公司 一种金属线及柔性显示面板
CN106684115A (zh) * 2017-01-18 2017-05-17 昆山工研院新型平板显示技术中心有限公司 一种金属导线及柔性显示面板
CN108694890B (zh) * 2017-04-05 2021-05-25 上海和辉光电股份有限公司 一种显示面板及显示装置
CN108694890A (zh) * 2017-04-05 2018-10-23 上海和辉光电有限公司 一种显示面板及显示装置
CN108695340A (zh) * 2017-04-05 2018-10-23 上海和辉光电有限公司 一种显示面板及显示装置
CN107864555A (zh) * 2017-12-09 2018-03-30 中国电子科技集团公司第四十三研究所 一种柔性电路板
CN107864555B (zh) * 2017-12-09 2024-02-09 中国电子科技集团公司第四十三研究所 一种柔性电路板
CN108682303A (zh) * 2018-05-14 2018-10-19 云谷(固安)科技有限公司 柔性显示基板、柔性显示屏和电子终端设备
CN108922877A (zh) * 2018-06-29 2018-11-30 武汉华星光电半导体显示技术有限公司 显示面板
CN109031779A (zh) * 2018-07-25 2018-12-18 京东方科技集团股份有限公司 发光二极管基板、背光模组和显示装置
CN109031779B (zh) * 2018-07-25 2024-06-11 京东方科技集团股份有限公司 发光二极管基板、背光模组和显示装置
US11276343B2 (en) 2018-07-25 2022-03-15 Boe Technology Group Co., Ltd. Substrate for light-emitting diode, backlight module and display device
CN110797372A (zh) * 2018-08-01 2020-02-14 创王光电股份有限公司 可挠显示器
CN110797374A (zh) * 2018-08-01 2020-02-14 创王光电股份有限公司 显示装置
US10930678B2 (en) 2018-09-30 2021-02-23 Wuhan China Star Optoelectronics Technology Co., Ltd. Curved array substrate and method of manufacturing thereof
CN109545796A (zh) * 2018-09-30 2019-03-29 武汉华星光电技术有限公司 一种曲面阵列基板及其制备方法
CN109860253A (zh) * 2019-01-31 2019-06-07 上海天马有机发光显示技术有限公司 一种柔性显示面板及柔性显示装置
CN111667764A (zh) * 2020-06-28 2020-09-15 昆山国显光电有限公司 一种柔性显示面板及显示装置
CN114188387A (zh) * 2021-12-09 2022-03-15 深圳市华星光电半导体显示技术有限公司 柔性显示面板
WO2023103086A1 (zh) * 2021-12-09 2023-06-15 深圳市华星光电半导体显示技术有限公司 柔性显示面板
CN114188387B (zh) * 2021-12-09 2023-08-22 深圳市华星光电半导体显示技术有限公司 柔性显示面板

Also Published As

Publication number Publication date
KR102258467B1 (ko) 2021-05-31
JP6824384B2 (ja) 2021-02-03
WO2018036391A1 (zh) 2018-03-01
EP3477702A4 (en) 2019-12-11
CN106206613B (zh) 2020-12-29
EP3477702B1 (en) 2023-02-15
JP2019528467A (ja) 2019-10-10
US20190244983A1 (en) 2019-08-08
TWI638589B (zh) 2018-10-11
TW201820942A (zh) 2018-06-01
US11152401B2 (en) 2021-10-19
KR20190015574A (ko) 2019-02-13
EP3477702A1 (en) 2019-05-01

Similar Documents

Publication Publication Date Title
CN106206613A (zh) 一种柔性显示基板及其制备方法
CN106684115A (zh) 一种金属导线及柔性显示面板
CN106973485A (zh) 显示设备及其柔性电路板
CN109309111A (zh) 柔性显示面板、柔性显示装置及柔性显示面板制备方法
CN104732908A (zh) 显示面板
US8258630B2 (en) Semiconductor device and method of manufacturing the same
JP5226070B2 (ja) 配線基板、及び、液晶表示装置
CN107422197A (zh) 用于探针卡的导板和制造用于探针卡的导板的方法
CN103094231B (zh) 电子器件以及用于制造电子器件的方法
CN104834398A (zh) 触摸面板以及制造触摸面板的方法
CN109643525A (zh) 具有多条第一接线和多条第二接线的显示面板和显示装置
EP3961712A1 (en) Flexible substrate and display device
US10194529B2 (en) Partial metal fill for preventing extreme-low-k dielectric delamination
CN103187241B (zh) 改善mim电容器制作中电弧放电缺陷的方法
CN103915357A (zh) 一种超细间距微凸点的制备方法
CN111627921B (zh) 显示面板、终端设备及制造方法
CN109427249A (zh) 柔性显示面板及其制作方法
US20060022225A1 (en) Metal bond pad for integrated circuits allowing improved probing ability of small pads
JP2013197407A (ja) 半導体装置
CN105097774B (zh) 芯片晶圆及其制作方法
CN102695115A (zh) 微机电系统声压感测元件及其制作方法
CN101692455A (zh) 基于soi的电容
US11768227B1 (en) Multi-layer probes having longitudinal axes and preferential probe bending axes that lie in planes that are nominally parallel to planes of probe layers
TWI377350B (en) Branched probe and method for making the same
US11201123B2 (en) Substrate structure and manufacturing method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant