CN109427249A - 柔性显示面板及其制作方法 - Google Patents
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- 238000002360 preparation method Methods 0.000 title description 14
- 239000002184 metal Substances 0.000 claims abstract description 55
- 230000007704 transition Effects 0.000 claims description 24
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- 239000000758 substrate Substances 0.000 claims description 7
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- 230000007423 decrease Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 167
- 238000005452 bending Methods 0.000 description 18
- 239000000463 material Substances 0.000 description 7
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- 238000005530 etching Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 239000012044 organic layer Substances 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
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- 239000012212 insulator Substances 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
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Abstract
本发明提供了一种柔性显示面板。所述显示面板包括柔性基板;形成于所述柔性基板上的缓冲层;和形成于所述缓冲层上的金属层,其中,所述柔性显示面板在横向上包括显示区和弯折区,所述缓冲层包括第一部分和第二部分,所述第一部分对应于所述显示区,所述第二部分对应于所述弯折区,所述第一部分的厚度小于所述第二部分的厚度。
Description
技术领域
本发明涉及显示器技术领域,具体涉及一种柔性显示面板及其制作方法。
背景技术
柔性可折叠显示器,例如有机发光显示器(OLED),可以为用户带来全新的视觉体验。但这种显示器在多次弯折后,容易产生金属线断裂问题,从而影响显示。
目前的解决方法是采用绝缘层/金属层/绝缘层/平坦化层结构对金属线进行保护。但绝缘层的杨氏模量较大,在弯折时容易出现断裂,从而导致金属线断裂。
发明内容
有鉴于此,本发明实施例提供了一种柔性显示面板及其制作方法,能够提高柔性显示面板的弯折能力。
本发明的一个方面提供一种柔性显示面板,所述显示面板包括:柔性基板;形成于所述柔性基板上的缓冲层;和形成于所述缓冲层上的金属层,其中,所述柔性显示面板在横向上包括显示区和弯折区,所述缓冲层包括第一部分和第二部分,所述第一部分对应于所述显示区,所述第二部分对应于所述弯折区,所述第一部分的厚度小于所述第二部分的厚度。
在一个实施例中,所述第一部分包括依次设置的第一SIOX层、SINX层和第二SIOX层,其中所述第一SIOX层设置在所述柔性基板上,所述第二部分包括第一SIOX层。
在一个实施例中,所述第二部分的第一SIOX层的厚度小于或等于所述第一部分的第一SIOX层的厚度。
在一个实施例中,所述柔性显示面板在横向上还包括过渡区,所述过渡区位于所述显示区和所述弯折区之间,所述缓冲层还包括第三部分,所述第三部分对应于所述过渡区,所述第三部分在从所述柔性基板朝向所述金属层的方向上宽度逐渐减少。
在一个实施例中,所述第二部分的厚度为10nm至30nm。
本发明的一个方面提供了一种柔性显示面板的制作方法,所述柔性显示面板在横向上包括显示区和弯折区,所述方法包括:在柔性基板上形成缓冲层;对所述缓冲层与所述弯折区对应的部分进行蚀刻,得到第二部分,其中,所述缓冲层与所述显示区对应的部分作为第一部分,所述第二部分的厚度小于所述第一部分的厚度;在缓冲层上形成金属层。
在一个实施例中,所述在柔性基板上形成缓冲层包括:在所述柔性基板上依次形成第一SIOX层、SINX层和第二SIOX层,其中,所述对所述缓冲层与所述弯折区对应的部分进行蚀刻得到第二部分,包括:蚀刻所述缓冲层的与弯折区对应的第二SIOX层和SINX层,以露出所述第二部分的第一SIOX层。
在一个实施例中,所述方法还包括:进一步蚀刻所述第二部分的第一SIOX,使得所述第二部分的第一SIOX层的厚度小于或等于所述第一部分的第一SIOX层的厚度。
在一个实施例中,所述柔性显示面板在横向上还包括过渡区,所述过渡区位于所述显示区和所述弯折区之间,所述方法还包括:对所述缓冲层对应于所述过渡区的部分进行蚀刻,得到第三部分,其中所述第三部分在从所述柔性基板朝向所述金属层的方向上宽度逐渐减少。
在一个实施例中,所述第二部分的厚度为10nm至30nm。
本发明实施例提供的柔性显示面板的制作方法,通过在形成金属层之前对弯折区的缓冲层进行蚀刻,使得弯折区的缓冲层的厚度小于显示区的缓冲层的厚度,从而提高了柔性显示面板的弯折能力。
附图说明
图1所示为本发明一实施例提供的一种柔性显示面板的示意性剖面图。
图2所示为本发明另一实施例提供的一种柔性显示面板的剖面图。
图3为本发明一个实施例的柔性显示面板的制备方法的示意性流程图。
图4为本发明另一实施例的柔性显示面板的制备方法的示意性流程图。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
图1所示为本发明一实施例提供的一种柔性显示面板100的示意性剖面图。
柔性显示面板100包括柔性基板101;形成于柔性基板101上的缓冲层102;和形成于缓冲层102上的金属层103。柔性显示面板100在横向上包括显示区1和弯折区3,缓冲层102包括第一部分和第二部分,第一部分对应于显示区1,第二部分对应于弯折区3,第一部分的厚度小于第二部分的厚度。
根据本发明的实施例,通过在形成金属层之前对弯折区的缓冲层进行蚀刻,使得弯折区的缓冲层的厚度小于显示区的缓冲层的厚度,从而提高了柔性显示面板的弯折能力。
根据本发明的实施例,缓冲层102的第一部分可以包括依次设置的第一SIOX层106、SINX层107和第二SIOX层108,缓冲层102的第二部分包括第一SIOX层,并且不包括SINX层和第二SIOX层。
参见图1,在柔性显示面板的显示区,缓冲层从下向上依次设置有第一SIOX层106、SINX层107、第二SIOX层108(即第二部分)。在柔性显示面板的弯折区,缓冲层可以是将SINX层和第二SIOX层去掉而剩下的第一SIOX层109(即第一部分)。第一SIOX层106和第一SIOX层109处于同一层。
应理解,缓冲层102的第一部分可以包括第一SIOX层、SINX层和第二SIOX层中的至少一层,而且本发明的实施例对各层的设置顺序不作限制。可替代地,缓冲层102也可以是其它硅化合物或者其它可以用作缓冲层的材料。
进一步地,第二部分的第一SIOX层109的厚度小于或等于第一部分的第一SIOX层106的厚度。例如,第一部分的厚度可以为300nm至1400nm。第二部分的厚度为10nm至100nm。
优选地,第二部分的厚度为10nm至30nm。
可选地,作为另一实施例,柔性显示面板100还包括平坦化层105。
例如,该柔性显示面板100包括柔性基板101、以及在柔性基板101上依次形成的缓冲层102、金属层103和有平坦层105。弯折区的缓冲层的厚度小于显示区的缓冲层的厚度。平坦化层105的材料为有机材料。缓冲层102例如可以是无机绝缘材料。例如,无机绝缘材料可以为无机硅材料,具体可以为氮化硅或氧化硅等。通常情况下,以无机硅材料作为缓冲层时,例如,在柔性显示面板弯折时,容易导致金属层中的金属线断裂。通常情况下,弯折区的缓冲层的厚度越薄,弯折区的金属层的弯折能力越强。当弯折区的缓冲层的厚度非常小时,弯折区的金属层位于有机层之间,在进行弯折时,弯折区的金属层被折断的风险大大降低。通过减小弯折区的缓冲层的厚度,可以增加柔性屏体弯折区的弯折能力。
可选地,作为另一实施例,该柔性基板101在横向上还包括过渡区2。过渡区2位于显示区1和弯折区3之间,缓冲层102还包括第三部分,第三部分对应于过渡区2,第三部分在从柔性基板101朝向金属层103的方向上宽度逐渐减少。第三部分的厚度为300nm至700nm。过渡区2的作用是降低金属层爬坡时断线的风险,第三部分的厚度变薄是为了降低金属层在弯折时断线的风险。
根据本发明的实施例,金属层103可以是金属线。
图2所示为本发明另一实施例提供的一种柔性显示面板200的剖面图。柔性显示面板100包括柔性基板101;形成于柔性基板101上的缓冲层102;形成于缓冲层102上的金属层103、钝化层104和平坦化层105,钝化层104设置在平坦化层105与金属层103之间。柔性显示面板100在横向上包括显示区1和弯折区3,缓冲层102包括第一部分和第二部分,第一部分对应于显示区1,第二部分对应于弯折区3,第一部分的厚度小于第二部分的厚度。
根据本发明的实施例,通过在形成金属层之前对弯折区的缓冲层进行蚀刻,使得弯折区的缓冲层的厚度小于显示区的缓冲层的厚度,从而提高了柔性显示面板的弯折能力。
根据本发明的实施例,缓冲层102的第一部分可以包括依次设置的第一SIOX层106、SINX层107和第二SIOX层108,缓冲层102的第二部分包括第一SIOX层,并且不包括SINX层和第二SIOX层。
参见图2,在柔性显示面板的显示区,缓冲层从下向上依次设置有第一SIOX层106、SINX层107、第二SIOX层108(即第二部分)。在柔性显示面板的弯折区,缓冲层可以是将SINX层和第二SIOX层去掉而剩下的第一SIOX层109(即第一部分)。第一SIOX层106和第一SIOX层109处于同一层。
应理解,缓冲层102的第一部分可以包括第一SIOX层、SINX层和第二SIOX层中的至少一层,而且本发明的实施例对各层的设置顺序不作限制。可替代地,缓冲层102也可以是其它硅化合物或者其它可以用作缓冲层的材料。
进一步地,第二部分的第一SIOX层109的厚度小于或等于第一部分的第一SIOX层106的厚度。例如,第一部分的厚度可以为300nm至1400nm。第二部分的厚度为10nm至100nm。
优选地,第二部分的厚度为10nm至30nm。
可选地,作为另一实施例,该柔性基板101在横向上还包括过渡区2。过渡区2位于显示区1和弯折区3之间,缓冲层102还包括第三部分,第三部分对应于过渡区2,第三部分在从柔性基板101朝向金属层103的方向上宽度逐渐减少。第三部分的厚度为300nm至700nm。过渡区2的作用是降低金属层爬坡时断线的风险,第三部分的厚度变薄是为了降低金属层在弯折时断线的风险。
根据本发明的实施例,金属层103可以是金属线。
钝化层104和平坦化层105的材料为有机材料。缓冲层102例如可以是无机绝缘材料。例如,无机绝缘材料可以为无机硅材料,具体可以为氮化硅或氧化硅等。通常情况下,以无机硅材料作为缓冲层时,例如,在柔性显示面板弯折时,容易导致金属层中的金属线断裂。通常情况下,弯折区的缓冲层的厚度越薄,弯折区的金属层的弯折能力越强。当弯折区的缓冲层的厚度非常小时,弯折区的金属层位于有机层之间,在进行弯折时,弯折区的金属层被折断的风险大大降低。通过减小弯折区的缓冲层的厚度,可以增加柔性屏体弯折区的弯折能力。
图3为本发明实施例的柔性显示面板的制备方法的示意性流程图。柔性显示面板在横向上包括显示区和弯折区。图3的制备方法用于制备图1和图2的实施例中的柔性显示面板。图3的制备方法包括如下内容。
301:在柔性基板上形成缓冲层。
302:对缓冲层与弯折区对应的部分进行蚀刻,得到第二部分,其中,缓冲层与显示区对应的部分作为第一部分,第二部分的厚度小于第一部分的厚度。
303:在缓冲层上形成金属层。
根据本发明的实施例,通过在形成金属层之前对弯折区的缓冲层进行蚀刻,使得弯折区的缓冲层的厚度小于显示区的缓冲层的厚度,从而提高了柔性显示面板的弯折能力。
根据本发明的实施例,在形成缓冲层时,可以在柔性基板上依次形成第一SIOX层、SINX层和第二SIOX层,并且可以蚀刻缓冲层的与弯折区对应的第二SIOX层和SINX层,以露出第二部分的第一SIOX层。
可选地,作为另一实施例,在形成缓冲层时,可以进一步蚀刻第二部分的第一SIOX,使得第二部分的第一SIOX层的厚度小于或等于第一部分的第一SIOX层的厚度。
在一个实施例中,柔性显示面板在横向上还包括过渡区,过渡区位于显示区和弯折区之间,图3的制备方法还包括:对缓冲层对应于过渡区的部分进行蚀刻,得到第三部分,其中第三部分在从柔性基板朝向金属层的方向上宽度逐渐减少。
根据本发明的实施例,第二部分的厚度为10nm至30nm。
根据本发明的实施列,金属层包括金属线。
图4为本发明实施例的柔性显示面板的制备方法的示意性流程图。图4的制备方法是图3的制图方法的例子,用于制备图1和图2的实施例中的柔性显示面板。图的制备方法包括如下内容。
401:在柔性基板上形成缓冲层。
402:在整个柔性基板上依次形成第一SIOX层、SINX层和第二SIOX层。
403:蚀刻缓冲层的与弯折区对应的第二SIOX层和SINX层,以露出第二部分的第一SIOX层。
404:蚀刻第二部分的第一SIOX,使得第二部分的第一SIOX层的厚度小于或等于第一部分的第一SIOX层的厚度。
405:对缓冲层对应于过渡区的部分进行蚀刻,得到第三部分,其中第三部分在从柔性基板朝向金属层的方向上宽度逐渐减少。
406:在缓冲层上形成栅极绝缘层110、电容绝缘层111、层间介电层112。
407:在层间介电层112上形成金属层。即金属层可以覆盖层间介电层112以及缓冲层的第二部分和第三部分。
408:在金属层上形成钝化层。
409:在钝化层上形成平坦化层。
应理解,408和409是可选的。平坦化层和钝化层的材料为有机材料。缓冲层例如可以是无机绝缘材料。例如,无机绝缘材料可以为无机硅材料,具体可以为氮化硅或氧化硅等。通常情况下,以无机硅材料作为缓冲层时,例如,在柔性显示面板弯折时,容易导致金属层中的金属线断裂。通常情况下,弯折区的缓冲层的厚度越薄,弯折区的金属层的弯折能力越强。当弯折区的缓冲层的厚度非常小时,弯折区的金属层位于有机层之间,在进行弯折时,弯折区的金属层被折断的风险大大降低。同时,较薄的无机层可以防止刻蚀和沉积时有机材料污染腔室。通过减小弯折区的缓冲层的厚度,可以增加柔性屏体弯折区的弯折能力。此外,在沉积金属层之前对弯折区的缓冲层进行蚀刻,该工艺流程较为简单,从而节省成本。
以上所述仅为本发明的较佳实施例而已,并不用以限制本发明,凡在本发明的精神和原则之内,所作的任何修改、等同替换等,均应包含在本发明的保护范围之内。
Claims (10)
1.一种柔性显示面板,其特征在于,所述显示面板包括:
柔性基板;
形成于所述柔性基板上的缓冲层;和
形成于所述缓冲层上的金属层,
其中,所述柔性显示面板在横向上包括显示区和弯折区,所述缓冲层包括第一部分和第二部分,所述第一部分对应于所述显示区,所述第二部分对应于所述弯折区,所述第一部分的厚度小于所述第二部分的厚度。
2.根据权利要求1所述的柔性显示面板,其特征在于,所述第一部分包括依次设置的第一SIOX层、SINX层和第二SIOX层,其中所述第一SIOX层设置在所述柔性基板上,所述第二部分包括第一SIOX层。
3.根据权利要求2所述的柔性显示面板,其特征在于,所述第二部分的第一SIOX层的厚度小于或等于所述第一部分的第一SIOX层的厚度。
4.根据权利要求1至3中的任一项所述的柔性显示面板,其特征在于,所述柔性显示面板在横向上还包括过渡区,所述过渡区位于所述显示区和所述弯折区之间,所述缓冲层还包括第三部分,所述第三部分对应于所述过渡区,所述第三部分在从所述柔性基板朝向所述金属层的方向上宽度逐渐减少。
5.根据权利要求1至3中的任一项所述的柔性显示面板,其特征在于,所述第二部分的厚度为10nm至30nm。
6.一种柔性显示面板的制作方法,其特征在于,所述柔性显示面板在横向上包括显示区和弯折区,所述方法包括:
在柔性基板上形成缓冲层;
对所述缓冲层与所述弯折区对应的部分进行蚀刻,得到第二部分,其中,所述缓冲层与所述显示区对应的部分作为第一部分,所述第二部分的厚度小于所述第一部分的厚度;
在缓冲层上形成金属层。
7.根据权利要求6所述的制作方法,其特征在于,所述在柔性基板上形成缓冲层,包括:
在所述柔性基板上依次形成第一SIOX层、SINX层和第二SIOX层,
其中,所述对所述缓冲层与所述弯折区对应的部分进行蚀刻得到第二部分,包括:
蚀刻所述缓冲层的与弯折区对应的第二SIOX层和SINX层,以露出所述第二部分的第一SIOX层。
8.根据权利要求7所述的制作方法,其特征在于,还包括:
进一步蚀刻所述第二部分的第一SIOX,使得所述第二部分的第一SIOX层的厚度小于或等于所述第一部分的第一SIOX层的厚度。
9.根据权利要求6至8中的任一项所述的制作方法,其特征在于,所述柔性显示面板在横向上还包括过渡区,所述过渡区位于所述显示区和所述弯折区之间,所述方法还包括:
对所述缓冲层对应于所述过渡区的部分进行蚀刻,得到第三部分,其中所述第三部分在从所述柔性基板朝向所述金属层的方向上宽度逐渐减少。
10.根据权利要求6至8中的任一项所述的制作方法,其特征在于,所述第二部分的厚度为10nm至30nm。
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CN105144418A (zh) * | 2013-02-01 | 2015-12-09 | 乐金显示有限公司 | 柔性显示基板、柔性有机发光显示装置及其制造方法 |
CN106796364A (zh) * | 2014-08-30 | 2017-05-31 | 乐金显示有限公司 | 包括具有增强部分的配线的柔性显示装置及其制造方法 |
CN104485351A (zh) * | 2014-12-31 | 2015-04-01 | 深圳市华星光电技术有限公司 | 一种柔性有机发光显示器及其制作方法 |
CN104934438A (zh) * | 2015-04-24 | 2015-09-23 | 京东方科技集团股份有限公司 | 一种显示基板及其制作方法、显示装置 |
CN106601133A (zh) * | 2017-02-28 | 2017-04-26 | 京东方科技集团股份有限公司 | 一种柔性显示面板、其制作方法及显示装置 |
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WO2020232598A1 (en) * | 2019-05-20 | 2020-11-26 | Boe Technology Group Co., Ltd. | Array substrate, display apparatus, and method of fabricating array substrate |
CN112335067A (zh) * | 2019-05-20 | 2021-02-05 | 京东方科技集团股份有限公司 | 阵列基板、显示设备和制造阵列基板的方法 |
US11296165B2 (en) | 2019-05-20 | 2022-04-05 | Boe Technology Group Co., Ltd. | Array substrate, display apparatus, and method of fabricating array substrate |
CN112335067B (zh) * | 2019-05-20 | 2024-04-02 | 京东方科技集团股份有限公司 | 阵列基板、显示设备和制造阵列基板的方法 |
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TW201914001A (zh) | 2019-04-01 |
TWI670845B (zh) | 2019-09-01 |
US10756126B2 (en) | 2020-08-25 |
US20190214412A1 (en) | 2019-07-11 |
KR102380403B1 (ko) | 2022-03-31 |
EP3614431A4 (en) | 2020-04-22 |
KR20190133267A (ko) | 2019-12-02 |
WO2019041901A1 (zh) | 2019-03-07 |
EP3614431A1 (en) | 2020-02-26 |
JP2020521175A (ja) | 2020-07-16 |
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