WO2018036391A1 - 一种柔性显示基板及其制备方法 - Google Patents

一种柔性显示基板及其制备方法 Download PDF

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Publication number
WO2018036391A1
WO2018036391A1 PCT/CN2017/097007 CN2017097007W WO2018036391A1 WO 2018036391 A1 WO2018036391 A1 WO 2018036391A1 CN 2017097007 W CN2017097007 W CN 2017097007W WO 2018036391 A1 WO2018036391 A1 WO 2018036391A1
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Prior art keywords
metal
layer
metal layer
flexible display
contact hole
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PCT/CN2017/097007
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English (en)
French (fr)
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袁波
刘玉成
高胜
徐琳
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昆山工研院新型平板显示技术中心有限公司
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Priority to KR1020197002234A priority Critical patent/KR102258467B1/ko
Priority to JP2019503725A priority patent/JP6824384B2/ja
Priority to EP17842814.0A priority patent/EP3477702B1/en
Publication of WO2018036391A1 publication Critical patent/WO2018036391A1/zh
Priority to US16/317,417 priority patent/US11152401B2/en

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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
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    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
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    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
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    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
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    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
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    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
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    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/4985—Flexible insulating substrates
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • H—ELECTRICITY
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
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    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a flexible display substrate and a method for fabricating the same.
  • Flexible displays need to be rolled up or bent during use, and even bent frequently, so that the stress generated by the deformation will accumulate and be superimposed on the metal wires and the insulating layer in the display substrate, and the metal wire breaks, and at the same time, After the secondary bending, the insulating layer is also in danger of being broken, resulting in failure to display properly, which seriously affects the service life of the flexible display.
  • the industry mainly releases stress by setting holes in the metal wires or changing the patterns of the metal wires (such as rectangles, waves, etc.). Although these methods can increase the number of times the metal wire is used and prolong the service life of the display, the requirements for the lithographic apparatus are relatively high due to the punching of the metal wire or the change of the pattern of the metal wire, which increases the process difficulty.
  • Some of the prior art also discloses a method of replacing a metal layer of molybdenum, titanium or copper with a material that is relatively flexible and easy to bend (for example, graphene or nanosilver, etc.) to form a metal line for a display substrate.
  • a material that is relatively flexible and easy to bend for example, graphene or nanosilver, etc.
  • the method can prolong the use of the metal wire and improve the reliability of the display, the cost is high due to the limitation of the material, and the use of the substitute material also causes a significant change in the structure and the preparation process of the flexible substrate. It is realized by existing equipment and processes.
  • the above methods are only measures for improving the wire breakage. After these measures, the above method does not effectively release the stress accumulated in the insulating layer because the insulating layer is still continuous. To solve the technical problem that the insulation layer is easy to break.
  • the embodiment of the present invention provides a flexible display substrate, which can effectively reduce stress accumulation in the flexible display substrate, and reduce the probability of breakage of the metal wire and the insulating layer during bending of the flexible screen body;
  • a method for preparing a flexible display substrate is provided, which can prevent aging of the flexible display screen and prolong its life.
  • a flexible display substrate provided by an embodiment of the invention includes a flexible substrate on which at least one conductive composite layer is disposed, the conductive composite layer comprising two metal layers and an insulating layer between the two metal layers
  • the conductive composite layer comprising two metal layers and an insulating layer between the two metal layers
  • Each of the two metal layers includes a metal wire segment disposed separately, and a contact hole is formed in the insulating layer, and the metal wire segments of the two metal layers are connected by the metal in the contact hole to form a continuous metal wire.
  • each of the two metal layers comprises metal segments having the same or similar extension directions and spaced apart.
  • the metal line segments of the two metal layers in each of the at least one electrically conductive composite layer are offset.
  • the at least one electrically conductive composite layer comprises a lower conductive composite layer and an upper conductive composite layer adjacent thereto, the lower conductive composite layer and the upper conductive composite layer sharing a metal layer.
  • the density of metal segments in different metal layers is different.
  • the conductive composite layer includes a first metal layer and a second metal layer, and one end of the metal in the contact hole is connected to the head or the tail of the metal line segment of the first metal layer, and the metal in the contact hole is further One end is connected to the tail or head of the metal line segment of the second metal layer, wherein the density of the metal line segments of the first metal layer is greater than the density of the metal line segments of the second metal layer.
  • the conductive composite layer includes a first metal layer, a second metal layer, and a third metal layer, wherein the metal line segments in the second metal layer comprise spaced first metal line segments and a third metal a line segment; one end of the metal in the contact hole between the first metal layer and the second metal layer is connected to the head or the tail of the metal line segment of the first metal layer, and the other end of the metal in the contact hole is connected to the first portion of the second metal layer a tail or head of the metal segment, wherein the metal segment of the first metal layer has a greater density than the first metal of the second metal layer a density of the line segments; and/or one end of the metal in the contact hole between the third metal layer and the second metal layer is connected to the head or the tail of the metal line segment of the third metal layer, and the other end of the metal in the contact hole is connected to the second The tail or head of the third metal line segment of the metal layer, wherein the density of the metal line segments of the third metal layer is greater than the density of the
  • the conductive composite layer includes a first metal layer, a second metal layer, and a third metal layer; one end of the metal in the contact hole between the first metal layer and the second metal layer is connected to the first metal
  • the head or the tail of the metal wire segment of the layer, the other end of the metal in the contact hole is connected to the tail or the head of the metal wire segment of the second metal layer; the metal end of the contact hole between the second metal layer and the third metal layer is connected In the head or tail of the metal line segment of the second metal layer, the other end of the metal in the contact hole is connected to the tail or the head of the metal line segment of the third metal layer,
  • the density of the metal line segments of the first metal layer is greater than the density of the metal line segments of the second metal layer
  • the density of the metal line segments of the third metal layer is greater than the density of the metal line segments of the second metal layer
  • the metal line segments of the first metal layer The density is less than the density of the metal segments of the third metal layer.
  • a continuous metal wire is used as the data line or gate line.
  • the wire is made of one of aluminum, titanium, molybdenum or an aluminum alloy, a titanium alloy, a molybdenum alloy.
  • the insulating layer is made of silicon nitride or silicon oxide.
  • the material of the flexible substrate is one of polyimide, polycarbonate, polyacrylate, polyetherimide, polyethersulfone or polyethylene terephthalate. kind.
  • a method for preparing a flexible display substrate includes: preparing a flexible substrate; alternately disposing an insulating layer and a metal layer on the flexible substrate; wherein, in the process of providing a plurality of insulating layers and a plurality of metal layers And performing the following steps: providing a contact hole on the insulating layer between the adjacent metal layers, the contact hole is filled with metal; the metal layer is separated by the same or similar extending direction; the metal in the contact hole is adjacent to the metal layer The metal segments are alternately connected to form a continuous metal wire.
  • a method of fabricating a flexible display substrate includes: preparing a flexible substrate; forming a first insulating layer on the flexible substrate; forming a first metal layer on the first insulating layer, in the first metal Separating metal line segments of the same or similar extending direction; forming a second insulating layer on the first metal layer, a contact hole is disposed on the second insulating layer, the contact hole is filled with metal; a second metal layer is formed on the second insulating layer, and the metal line segment is disposed in the same or similar extending direction in the second metal layer, and the metal end in the contact hole is Connected to the head or tail of the metal line segment of the first metal layer, the other end of the metal in the contact hole is connected to the tail or head of the metal line segment of the second metal layer.
  • the metal line segments in different metal layers are alternately connected to each other to form a continuous metal wire and a plurality of relatively independent insulating layer blocks arranged in a plurality of metal layers, having a polygonal structure, and effectively
  • the stress accumulation in the flexible display substrate is reduced, and the probability of the metal wire and the insulating layer being broken during the bending process of the flexible screen body is reduced.
  • the method for preparing the flexible display substrate provided by the embodiment of the invention uses the contact hole to be used in the multilayer metal layer.
  • the metal wire segments are alternately connected to form a continuous metal wire arranged in a plurality of metal layers, having a broken line structure, and a plurality of relatively independent insulating layer blocks, thereby preventing aging of the flexible display screen and prolonging the service life thereof.
  • FIG. 1 is a schematic structural diagram of a flexible display substrate according to an embodiment of the present invention.
  • FIG. 2 is a schematic structural diagram of a flexible display substrate according to another embodiment of the present invention.
  • FIG. 3 is a schematic structural diagram of a flexible display substrate according to still another embodiment of the present invention.
  • FIG. 4 is a schematic flow chart of a method for fabricating a flexible display substrate according to an embodiment of the invention.
  • FIG. 5 is a schematic flow chart of a method for fabricating a flexible display substrate according to another embodiment of the present invention.
  • FIG. 1 is a schematic structural view of a flexible display substrate according to an embodiment of the present invention
  • FIG. 2 A schematic structural view of a flexible display substrate according to another embodiment of the present invention
  • FIG. 3 is a schematic structural view of a flexible display substrate according to still another embodiment of the present invention.
  • a flexible display substrate provided by an embodiment of the present invention includes a flexible substrate 1 on which an insulating layer and a metal layer are alternately disposed.
  • the metal layer includes metal line segments which are disposed in the same or adjacent extending direction, and the contact holes 6 are formed in the insulating layer between the adjacent metal layers, and the metal line segments of the adjacent metal layers are alternately connected through the metal in the contact holes 6 to form a continuous metal wire. .
  • the flexible display substrate comprises a flexible substrate 1 on which a first insulating layer 2, a first metal layer 3, a second insulating layer 4, and a second metal are sequentially disposed.
  • Layer 5 The first metal layer 3 and the second metal layer 5 respectively include metal wire segments 7 having the same or similar extending directions and spaced apart.
  • One end of the metal in the contact hole 6 is connected to the head or the tail of the metal line segment of the first metal layer 3, and the other end of the metal in the contact hole 6 is connected to the tail or the head of the metal line segment of the second metal layer 5.
  • the density of the metal line segments 7 in the first metal layer 3 and the metal line segments 10 in the second metal layer 5 may be different.
  • the first metal layer 3 can be used as a gate and a partial trace; the metal line segment 10 in the second metal layer 5 can be used as an upper plate of the capacitor, and thus the first metal
  • the number of metal segments 7 in layer 3 is greater than the number of metal segments 10 in second metal layer 5.
  • the ratio of the number of metal segments 7 in the first metal layer 3 to the number of metal segments 10 in the second metal layer 5 is about 3:2.
  • the metal line segments of the adjacent metal layers are misaligned and connected through the metal in the contact holes, thereby forming a continuous metal wire (for example, metal) having a polygonal structure reciprocating through the insulating layer.
  • Wire 8 the complete insulating layer (second insulating layer 4) is also divided into a plurality of relatively independent insulating layer blocks 9 by the plurality of contact holes 6 for connecting the metal layers 3 and 5, whereby the flexible display substrate can be further effectively reduced
  • the stress accumulation in the device reduces the probability of breakage of the metal wire and the insulating layer during bending of the flexible screen body.
  • the flexible display substrate is configured such that the first insulating layer 2, the first metal layer 3, the second insulating layer 4, the second metal layer 5, and the first layer are sequentially disposed on the flexible substrate 1.
  • Each of the first metal layer 3, the second metal layer 5, and the third metal layer 8 includes metal line segments having the same or similar extending directions and spaced apart. For example, in the first metal layer 3, there is a space The first metal line segment 11 and the third metal line segment 12 are disposed. In the second metal layer 5, there are spaced apart first metal line segments 9 and third metal line segments 10.
  • the second insulating layer 4 there are a plurality of contact holes 61, 62, 63, 64 in which each of the contact holes is filled with metal.
  • the lower end of the metal in the contact hole 61 of the second insulating layer 4 is connected to the head of the third metal line segment 12 of the first metal layer 3, and the upper end of the metal and the second metal layer in the contact hole 61 of the second insulating layer 4
  • the tails of the first metal line segments 9 of 5 are connected.
  • the metal in the remaining contact holes in the second insulating layer 4 is connected in a similar manner, and the remaining insulating layers and their adjacent metal layers are connected in a similar manner, which will not be described in detail.
  • the density of the metal line segments in the first metal layer 3, the metal line segments in the second metal layer 5, and the metal line segments in the third metal layer 8 may be different.
  • the first metal layer 3 can be used as a gate and a partial trace, so the number of metal line segments in the first metal layer 3 is increased; in the second metal layer 5 The metal segment can be used as the upper plate of the capacitor, so the number of metal segments in the second metal layer 5 is less; the metal segment in the third metal layer 8 can be used as the trace, so the metal in the third metal layer 8 The number of line segments will also be larger.
  • the density of the metal line segments in the first metal layer 3, the second metal layer 5, and the third metal layer 8 are different, and the ratio of the densities is about 3:2:4.
  • the metal line segments of adjacent metal layers are misaligned and connected through the metal in the contact hole, thereby forming a reciprocating wear.
  • a continuous metal wire for example, a metal wire 13
  • metal line segments of adjacent metal layers for example, the second metal layer 5 and the third metal layer 8
  • the metal is joined, thereby forming a continuous metal wire (for example, the metal wire 14) having a polygonal structure that reciprocates through the insulating layer.
  • the second insulating layer 4 and the third insulating layer 7 are also respectively divided into a plurality of relatively independent insulating layer blocks 15 and 16, which reduces the probability of breakage of the metal wires and the insulating layer during bending of the flexible screen body.
  • the flexible display substrate is configured such that the first insulating layer 2, the first metal layer 3, the second insulating layer 4, the second metal layer 5, and the first layer are sequentially disposed on the flexible substrate 1.
  • Each of the first metal layer 3, the second metal layer 5, and the third metal layer 8 includes metal line segments having the same or similar extending directions and spaced apart. Different from the above embodiment is the connection of metal segments the way. In this embodiment, the metal line segments in the first metal layer 3 and the third metal layer 8 are also connected through the metal line segments in the second metal layer 5, that is, the metal ends in the contact holes 6 of the second insulating layer 4 are connected.
  • the other end of the metal in the contact hole 6 is connected to the tail or head of the metal line segment of the second metal layer 5, in the contact hole 6 of the third insulating layer 7.
  • One end of the metal is connected to the head or the tail of the metal line segment of the second metal layer 5, and the other end of the metal in the contact hole 6 is connected to the tail or the head of the metal line segment of the third metal layer 8, and the whole is alternately arranged.
  • a continuous metal wire having a polygonal structure and a plurality of relatively independent insulating layer blocks.
  • the density of the metal line segments in the first metal layer 3, the metal line segments in the second metal layer 5, and the metal line segments in the third metal layer 8 may be different.
  • the first metal layer 3 can be used as a gate and a partial trace, so the number of metal line segments in the first metal layer 3 is increased; in the second metal layer 5 The metal segment can be used as the upper plate of the capacitor, so the number of metal segments in the second metal layer 5 is less; the metal segment in the third metal layer 8 can be used as the trace, so the metal in the third metal layer 8 The number of line segments will also be larger.
  • the density of the metal line segments in the first metal layer 3, the second metal layer 5, and the third metal layer 8 are different, and the ratio of the densities is about 3:2:4.
  • a continuous metal wire can be used as the data line or the gate line.
  • the metal wire can also be used as a signal line carrying other information.
  • the material of the metal wire may be one of aluminum, titanium, and molybdenum metal, or may be one of an alloy such as an aluminum alloy, a titanium alloy, or a molybdenum alloy, which is not specifically limited in the present invention.
  • the insulating layer is one of silicon nitride or silicon oxide, and may be, for example, Si x N y or Si x O y , which is not specifically limited in the present invention.
  • the material of the flexible substrate 1 may be polyimide, polycarbonate, polyacrylate, polyetherimide, polyethersulfone or polyethylene terephthalate.
  • the present invention does not Be specifically limited.
  • FIG. 4 is a flowchart of a method for preparing a flexible display substrate according to the embodiment. As shown in FIG. 4, the method includes the following steps:
  • Step 101 Prepare a flexible substrate 1.
  • the material of the flexible substrate 1 may be one of polyimide, polycarbonate, polyacrylate, polyetherimide, polyethersulfone or polyethylene terephthalate. This is not specifically limited.
  • Step 102 alternately providing an insulating layer and a metal layer on the flexible substrate 1. In the process of setting the insulating layer and the metal layer, the following steps are also performed:
  • Step 103 A contact hole 6 is provided on the insulating layer between adjacent metal layers, and the contact hole 6 is filled with metal.
  • Step 104 arranging metal line segments having the same or similar extending directions in the metal layer.
  • Step 105 The metal in the contact hole 6 alternately connects the metal line segments of the adjacent metal layers to form a continuous metal wire.
  • the insulating layer and the metal layer adjacent thereto form a conductive composite layer.
  • FIG. 5 is a flowchart of a method for preparing a flexible display substrate according to another embodiment of the present invention. As shown in FIG. 5, the method includes the following steps:
  • Step 201 Prepare a flexible substrate 1.
  • Step 202 Forming the first insulating layer 2 on the flexible substrate 1.
  • Step 203 forming a first metal layer 3 on the first insulating layer 2, and separating the metal line segments of the same or similar extending direction in the first metal layer 3.
  • Step 204 forming a second insulating layer 4 on the first metal layer 3, and providing a contact hole 6 on the second insulating layer 4, the contact hole 6 being filled with metal.
  • Step 205 forming a second metal layer 5 on the second insulating layer 4, and separating the metal line segments of the same or similar extending direction in the second metal layer 4, and connecting one end of the metal in the contact hole 6 to the first metal layer 3
  • the head or tail of the metal segment, the other end of the metal in the contact hole 6 is connected to the tail or head of the metal segment of the second metal layer 5.
  • the insulating layer and the metal layer (or metal segment) adjacent thereto form a conductive composite layer.
  • the metal layer is formed by a photolithography etching process.
  • the metal layer may also be formed by a process such as printing, inkjet, physical vapor deposition, or the like, which is not specifically limited in the present invention.
  • the metal line segments in different metal layers are alternately connected to each other to form a continuous metal wire and a plurality of relatively independent insulating layer blocks arranged in a plurality of metal layers, having a fold line structure, which can effectively
  • the stress accumulation in the flexible display substrate is reduced, and the probability of breakage of the metal wire and the insulating layer during bending of the flexible screen body is reduced.
  • the method for preparing a flexible display substrate uses a contact hole to alternately connect metal line segments in a plurality of metal layers to form a continuous metal wire arranged in a plurality of metal layers, having a polygonal structure, and a plurality of relatively independent
  • the insulating layer prevents the aging of the flexible display and prolongs its service life.
  • the present invention relates to the field of display technology.
  • the flexible display substrate of the present invention can effectively reduce stress accumulation in a flexible display substrate, and reduces the probability of breakage of the metal wires and the insulating layer during bending of the flexible screen body.
  • the method for preparing a flexible display substrate of the present invention can prevent aging of the flexible display screen and prolong its life.

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Abstract

一种柔性显示基板，能够有效地释放柔性显示基板所累积的应力，减小了柔性屏体弯曲过程中金属线和绝缘层断裂的几率；一种柔性显示基板的制备方法，能够防止柔性显示屏的老化，延长其寿命。提供的柔性显示基板包括柔性衬底（1），该柔性衬底上设置有至少一个导电复合层，该导电复合层包括两个金属层（3,5）和处于两个金属层之间的绝缘层（4），两个金属层中的每一个包括分隔设置的金属线段（7），绝缘层上开设有接触孔（6），两个金属层的金属线段通过接触孔中的金属相连而形成连续的金属导线（8）。

Description

一种柔性显示基板及其制备方法
本发明是要求由申请人提出的，申请日为2016年8月24日，申请号为CN201610715972.8，名称为“一种柔性显示基板及其制备方法”的申请的优先权。以上申请的全部内容通过整体引用结合于此。
技术领域
本发明涉及显示技术领域，具体涉及一种柔性显示基板及其制备方法。
发明背景
柔性显示器作为新一代的显示产品，由于其具有超轻、超薄、清晰度高、响应快、可弯曲、携带方便等优点，受到人们越来越多的广泛关注。
柔性显示器在使用时需要卷起或者弯曲，甚至频繁弯折，这样其发生形变产生的应力会累积和叠加到显示基板内的金属线和绝缘层上，就会出现金属线断裂的现象，同时多次弯曲之后也会使得绝缘层面临断裂的危险，导致无法正常显示，严重影响柔性显示器的使用寿命。
为解决上述技术问题，业内主要是通过在金属线上设置一些孔洞或是改变金属线的图形(如矩形、波浪形等)等方法以释放应力。这些方法虽能够增加金属线的使用次数，延长显示器的使用寿命，但由于在金属线打孔或是改变金属线的图形对于光刻设备的要求都比较高，加大了工艺难度。
现有技术中有些也公开了采用柔性较好、易于弯曲的材料(例如石墨烯或纳米银等)来替代金属层的钼、钛或铜的方法，来形成显示基板的金属线。该方法虽能够延长金属线的使用次数，提高显示器的可靠性，但由于材料的限制，成本较高，而且替代材料的使用也会使得柔性基板的结构和制备工艺等都会发生明显的变化，无法通过现有的设备和工艺实现。
另外，上述方法都只是针对金属线断裂采取的改进措施，采用这些措施后，由于绝缘层仍是连续的，所以上述方法并不能有效地释放累积在绝缘层中的应力 以解决绝缘层易断裂的技术问题。
发明内容
有鉴于此，本发明实施例提供了一种柔性显示基板，能够有效地降低了柔性显示基板中的应力累积，减小了柔性屏体弯曲过程中金属线和绝缘层断裂的几率；本发明还提供了一种柔性显示基板的制备方法，能够防止柔性显示屏的老化，延长其寿命。
本发明实施例提供的一种柔性显示基板，包括柔性衬底，该柔性衬底上设置有至少一个导电复合层，该导电复合层包括两个金属层和处于两个金属层之间的绝缘层，两个金属层中的每一个包括分隔设置的金属线段，绝缘层上开设有接触孔，两个金属层的金属线段通过接触孔中的金属相连而形成连续的金属导线。
在本发明的一个实施例中，两个金属层中的每一个包括具有相同或相近延伸方向并且分隔设置的金属线段。
在本发明的一个实施例中，在至少一个导电复合层中的每一个导电复合层中的两个金属层的金属线段错位设置。
在本发明的一个实施例中，至少一个导电复合层包括下层的导电复合层和与之相邻的上层的导电复合层，下层的导电复合层和上层的导电复合层共用金属层。
在本发明的一个实施例中，不同的金属层中的金属线段的密度不同。
在本发明的一个实施例中，导电复合层包括第一金属层和第二金属层，接触孔中的金属一端连接在第一金属层的金属线段的头部或尾部，接触孔中的金属另一端连接在第二金属层的金属线段的尾部或头部，其中第一金属层的金属线段的密度大于第二金属层的金属线段的密度。
在本发明的一个实施例中，导电复合层包括第一金属层、第二金属层和第三金属层，其中，第二金属层中的金属线段包括间隔设置的第一金属线段和第三金属线段；第一金属层和第二金属层间的接触孔中的金属一端连接在第一金属层的金属线段的头部或尾部，接触孔中的金属另一端连接在第二金属层的第一金属线段的尾部或头部，其中第一金属层的金属线段的密度大于第二金属层的第一金属 线段的密度；和/或第三金属层和第二金属层间的接触孔中的金属一端连接在第三金属层的金属线段的头部或尾部，接触孔中的金属另一端连接在第二金属层的第三金属线段的尾部或头部，其中第三金属层的金属线段的密度大于第二金属层的第三金属线段的密度。
在本发明的一个实施例中，导电复合层包括第一金属层、第二金属层和第三金属层；第一金属层和第二金属层间的接触孔中的金属一端连接在第一金属层的金属线段的头部或尾部，接触孔中的金属另一端连接在第二金属层的金属线段的尾部或头部；第二金属层和第三金属层间的接触孔中的金属一端连接在第二金属层的金属线段的头部或尾部，接触孔中的金属另一端连接在第三金属层的金属线段的尾部或头部，
其中，第一金属层的金属线段的密度大于第二金属层的金属线段的密度，第三金属层的金属线段的密度大于第二金属层的金属线段的密度，并且第一金属层的金属线段的密度小于第三金属层的金属线段的密度。
在本发明的一个实施例中，连续的金属导线用作数据线或栅极线。
在本发明的一个实施例中，金属线由铝、钛、钼或者铝合金、钛合金、钼合金中的一种材料制成。
在本发明的一个实施例中，绝缘层由硅氮化物或者硅氧化物制成。
在本发明的一个实施例中，柔性衬底的材料为聚酰亚胺、聚碳酸酯、聚丙烯酸酯、聚醚酰亚胺、聚醚砜或聚对苯二甲酸乙二醇酯中的一种。
本发明实施例提供的一种柔性显示基板的制备方法，包括：制备柔性衬底；在柔性衬底上交替设置绝缘层和金属层；其中，在设置多个绝缘层和多个金属层过程中，还执行如下步骤：在相邻金属层间的绝缘层上设置接触孔，接触孔中填充金属；在金属层分隔设置相同或相近延伸方向的金属线段；接触孔中的金属将相邻金属层的金属线段进行交替连接，形成连续的金属导线。
在本发明的一个实施例中，柔性显示基板的制备方法，包括：制备柔性衬底；在柔性衬底上形成第一绝缘层；在第一绝缘层上形成第一金属层，在第一金属层分隔设置相同或相近延伸方向的金属线段；在第一金属层上形成第二绝缘层，在 第二绝缘层上设置接触孔，接触孔中填充金属；在第二绝缘层上形成第二金属层，在第二金属层分隔设置相同或相近延伸方向的金属线段，将接触孔中的金属一端连接在第一金属层的金属线段的头部或尾部，接触孔中的金属另一端连接在第二金属层的金属线段的尾部或头部。
本发明实施例提供的柔性显示基板，不同金属层中的金属线段相互交替连接，形成排布在多层金属层中、具有折线结构的连续金属导线和多个相对独立的绝缘层块，有效地降低了柔性显示基板中的应力累积，减小了柔性屏体弯曲过程中金属线和绝缘层断裂的几率；本发明实施例提供的柔性显示基板的制备方法，利用接触孔将多层金属层中的金属线段进行交替连接，形成排布在多层金属层中、具有折线结构的连续金属导线和多个相对独立的绝缘层块，防止了柔性显示屏的老化，延长了其使用寿命。
附图简要说明
图1所示为本发明一实施例提供的一种柔性显示基板的结构示意图。
图2所示为本发明另一实施例提供的一种柔性显示基板的结构示意图。
图3所示为本发明再一实施例提供的一种柔性显示基板的结构示意图。
图4所示为本发明一实施例提供的一种柔性显示基板的制备方法的流程示意图。
图5所示为本发明另一实施例提供的一种柔性显示基板的制备方法的流程示意图。
实施本发明的方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
图1所示为本发明一实施例提供的一种柔性显示基板的结构示意图，图2所 示为本发明另一实施例提供的一种柔性显示基板的结构示意图，以及图3所示为本发明再一实施例提供的一种柔性显示基板的结构示意图。
本发明实施例提供的柔性显示基板，包括柔性衬底1，在该柔性衬底1上交替设有绝缘层和金属层。金属层包括相同或相近延伸方向分隔设置的金属线段，相邻金属层间的绝缘层上开设接触孔6，相邻金属层的金属线段通过接触孔6中的金属交替连接，形成连续的金属导线。
在如图1所示的实施例中，柔性显示基板包括柔性衬底1，在柔性衬底1上依次设置有第一绝缘层2、第一金属层3、第二绝缘层4以及第二金属层5。第一金属层3和第二金属层5中分别包括具有相同或相近延伸方向并且分隔设置的金属线段7。接触孔6中的金属一端连接在第一金属层3的金属线段的头部或尾部，接触孔6中的金属另一端连接在第二金属层5的金属线段的尾部或头部。
此外，第一金属层3中的金属线段7和第二金属层5中的金属线段10的密度可以为不同。例如，在本实施例的柔性显示基板中，第一金属层3可用于做栅极和部分走线；第二金属层5中的金属线段10可用于做电容的上极板，因此第一金属层3中的金属线段7的数量比第二金属层5中的金属线段10的数量更多。在一个具体的实施例中，第一金属层3中的金属线段7的数量与第二金属层5中的金属线段10的数量的比值约为3:2。
在本实施例的柔性显示基板中，相邻金属层的金属线段呈错位分布并且通过接触孔内的金属连接，由此形成了往复穿过绝缘层而具有折线结构的连续金属导线(例如，金属导线8)。此外，完整的绝缘层(第二绝缘层4)也被用于连接金属层3和5的多个接触孔6分成多个相对独立的绝缘层块9，由此能够进一步有效地降低柔性显示基板所中的应力累积，减小了柔性屏体弯曲过程中金属线和绝缘层断裂的几率。
在如图2所示的实施例中，柔性显示基板构造为在柔性衬底1上依次设置有第一绝缘层2、第一金属层3、第二绝缘层4、第二金属层5、第三绝缘层7以及第三金属层8。第一金属层3、第二金属层5和第三金属层8中均包括具有相同或相近延伸方向并且分隔设置的金属线段。例如，在第一金属层3中，具有间隔设 置的第一金属线段11和第三金属线段12。在第二金属层5中，具有间隔设置的第一金属线段9和第三金属线段10。在第二绝缘层4中，具有多个接触孔61、62、63、64，在每一个接触孔内填充有金属。第二绝缘层4的接触孔61中的金属的下端与第一金属层3的第三金属线段12的头部相连，第二绝缘层4的接触孔61中的金属的上端与第二金属层5的第一金属线段9的尾部相连。第二绝缘层4中的其余接触孔内的金属的连接方式与此类似，并且其余的绝缘层和其相邻的金属层的连接方式也与此类似，这不再详细描述。
第一金属层3中的金属线段、第二金属层5中的金属线段以及第三金属层8中的金属线段的密度可以为不同。例如，在本实施例的柔性显示基板中，第一金属层3可用于做栅极和部分走线，所以第一金属层3中的金属线段的数量会多一些；第二金属层5中的金属线段可用于做电容上极板，所以第二金属层5中的金属线段的数量会少一些；第三金属层8中的金属线段可用于做走线，所以第三金属层8中的金属线段的数量也会多一些。在一个具体实施例中，第一金属层3、第二金属层5、和第三金属层8中的金属线段的密度不同，并且密度的比值约为3:2:4。
在本实施例的柔性显示基板中，相邻金属层(例如，第一金属层3和第二金属层5)的金属线段呈错位分布并且通过接触孔内的金属连接，由此形成了往复穿过绝缘层而具有折线结构的连续金属导线(例如，金属导线13)，相邻金属层(例如，第二金属层5和第三金属层8)的金属线段呈错位分布并且通过接触孔内的金属连接，由此形成了往复穿过绝缘层而具有折线结构的连续金属导线(例如，金属导线14)。此外，第二绝缘层4与第三绝缘层7也分别被分成多个相对独立的绝缘层块15和16，减小了柔性屏体弯曲过程中金属线和绝缘层断裂的几率。
在如图3所示的实施例中，柔性显示基板构造为在柔性衬底1上依次设置有第一绝缘层2、第一金属层3、第二绝缘层4、第二金属层5、第三绝缘层7以及第三金属层8。第一金属层3、第二金属层5和第三金属层8中均包括具有相同或相近延伸方向并且分隔设置的金属线段。与上述实施例不同的是金属线段的连接 方式。本实施例中，第一金属层3与第三金属层8中的金属线段通过第二金属层5中的金属线段也形成连接，即：第二绝缘层4的接触孔6中的金属一端连接在第一金属层3的金属线段的头部或尾部，接触孔6中的金属另一端连接在第二金属层5的金属线段的尾部或头部，第三绝缘层7的接触孔6中的金属一端连接在第二金属层5的金属线段的头部或尾部，接触孔6中的金属另一端连接在第三金属层8的金属线段的尾部或头部，整体便形成了交替排布在上中下三层金属层中、具有折线结构的连续金属导线和多个相对独立的绝缘层块。
第一金属层3中的金属线段、第二金属层5中的金属线段以及第三金属层8中的金属线段的密度可以为不同。例如，在本实施例的柔性显示基板中，第一金属层3可用于做栅极和部分走线，所以第一金属层3中的金属线段的数量会多一些；第二金属层5中的金属线段可用于做电容上极板，所以第二金属层5中的金属线段的数量会少一些；第三金属层8中的金属线段可用于做走线，所以第三金属层8中的金属线段的数量也会多一些。在一个具体的实施例中，第一金属层3、第二金属层5、和第三金属层8中的金属线段的密度不同，并且密度的比值约为3:2:4。
本领域的技术人员不难理解，上述实施例只是本发明所列举的示例而已，操作人员可根据对分辨率或者其他方面的实际需求，来设计不同数目的绝缘层、金属层以及金属线段，也可以选择不同的金属线段连接方式，本发明对此不做具体限定。
在本发明一实施例中，连续的金属导线可用作数据线或栅极线。当然，金属线也可用作承载其他信息的信号线。金属导线的材料可以为铝、钛、钼金属中的一种，也可以为铝合金、钛合金、钼合金等合金中的一种，本发明对此不做具体限定。
在本发明一实施例中，绝缘层为硅氮化物或者硅氧化物中的一种，例如可以为SixNy或SixOy，本发明对此不作具体限定。
在本发明一实施例中，柔性衬底1的材料可以为聚酰亚胺、聚碳酸酯、聚丙烯酸酯、聚醚酰亚胺、聚醚砜或聚对苯二甲酸乙二醇酯中的一种，本发明对此不 作具体限定。
本发明实施例还提供了一种柔性显示基板的制备方法。图4所示为本实施例提供的柔性显示基板制备方法的流程图，如图4所示，该方法包括如下步骤：
步骤101：制备柔性衬底1。
其中，柔性衬底1的材料可以为聚酰亚胺、聚碳酸酯、聚丙烯酸酯、聚醚酰亚胺、聚醚砜或聚对苯二甲酸乙二醇酯中的一种，本发明对此不作具体限定。
步骤102：在柔性衬底1上交替设置绝缘层和金属层。在设置绝缘层和金属层过程中，还执行如下步骤：
步骤103：在相邻金属层间的绝缘层上设置接触孔6，接触孔6中填充金属。
步骤104：在金属层分隔设置具有相同或相近延伸方向的金属线段。
步骤105：接触孔6中的金属将相邻金属层的金属线段进行交替连接，形成连续的金属导线。
在上述方法中，绝缘性和与之相邻的金属层形成了导电复合层。
图5所示为本发明另一实施例提供的柔性显示基板制备方法的流程图，如图5所示，该方法包括如下步骤：
步骤201：制备柔性衬底1。
步骤202：在柔性衬底1上形成第一绝缘层2。
步骤203：在第一绝缘层2上形成第一金属层3，在第一金属层3分隔设置相同或相近延伸方向的金属线段。
步骤204：在第一金属层3上形成第二绝缘层4，在第二绝缘层4上设置接触孔6，接触孔6中填充金属。
步骤205：在第二绝缘层4上形成第二金属层5，在第二金属层4分隔设置相同或相近延伸方向的金属线段，将接触孔6中的金属一端连接在第一金属层3的金属线段的头部或尾部，接触孔6中的金属另一端连接在第二金属层5的金属线段的尾部或头部。
在上述方法中，绝缘性和与之相邻的金属层(或金属线段)形成了导电复合层。
在本发明一实施例中，金属层通过光刻刻蚀工艺形成。在另一实施例中，金属层还可通过打印、喷墨、物理气相沉积法等工艺形成，本发明对此不作具体限定。
很显然，本领域的技术人员在此制备方法的基础上，结合上述柔性显示基板的实施例，能够推导出采用更多金属层及选用不同连接方式时的制备方法，本发明对此不进行赘述。
本发明实施例提供的柔性显示基板，不同金属层中的金属线段相互交替连接，形成排布在多层金属层中、具有折线结构的连续金属导线和多个相对独立的绝缘层块，能够有效地降低柔性显示基板中的应力累积，减小了柔性屏体弯曲过程中金属线和绝缘层断裂的几率。本发明实施例提供的柔性显示基板的制备方法，利用接触孔将多层金属层中的金属线段交替连接，形成排布在多层金属层中、具有折线结构的连续金属导线和多个相对独立的绝缘层块，防止了柔性显示屏的老化，延长了其使用寿命。
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内，所作的任何修改、等同替换等，均应包含在本发明的保护范围之内。
本发明涉及显示技术领域，本发明的柔性显示基板能够有效地降低柔性显示基板中的应力累积，减小了柔性屏体弯曲过程中金属线和绝缘层断裂的几率。本发明的柔性显示基板的制备方法，能够防止柔性显示屏的老化，延长其寿命。

Claims (14)

  1. 一种柔性显示基板，包括柔性衬底，其特征在于，所述柔性衬底上设置有至少一个导电复合层，所述导电复合层包括两个金属层和处于所述两个金属层之间的绝缘层，所述两个金属层中的每一个包括分隔设置的金属线段，所述绝缘层上开设有接触孔，所述两个金属层的金属线段通过所述接触孔中的金属相连而形成连续的金属导线。
  2. 根据权利要求1所述的柔性显示基板，其特征在于，所述两个金属层中的每一个包括具有相同或相近延伸方向并且分隔设置的金属线段。
  3. 根据权利要求1或2所述的柔性显示基板，其特征在于，在所述至少一个导电复合层中的每一个导电复合层中的两个金属层的金属线段错位设置。
  4. 根据权利要求1至3中任一项所述的柔性显示基板，其特征在于，所述至少一个导电复合层包括下层的导电复合层和与之相邻的上层的导电复合层，所述下层的导电复合层和所述上层的导电复合层共用金属层。
  5. 根据权利要求1至4中任一项所述的柔性显示基板，其特征在于，不同的金属层中的金属线段的密度不同。
  6. 根据权利要求1至5中任一项所述的柔性显示基板，其特征在于，所述导电复合层包括第一金属层和第二金属层，所述接触孔中的金属一端连接在第一金属层的金属线段的头部或尾部，所述接触孔中的金属另一端连接在第二金属层的金属线段的尾部或头部，其中所述第一金属层的金属线段的密度大于所述第二金属层的金属线段的密度。
  7. 根据权利要求1至5中任一项所述的柔性显示基板，其特征在于，所述导电复合层包括第一金属层、第二金属层和第三金属层，其中，所述第二金属层中的金属线段包括间隔设置的第一金属线段和第三金属线段；
    第一金属层和第二金属层间的接触孔中的金属一端连接在第一金属层的金属线段的头部或尾部，接触孔中的金属另一端连接在第二金属层的第一金属线段的尾部或头部，其中所述第一金属层的金属线段的密度大于所述第二金属层的第一 金属线段的密度；和/或
    第三金属层和第二金属层间的接触孔中的金属一端连接在第三金属层的金属线段的头部或尾部，接触孔中的金属另一端连接在第二金属层的第三金属线段的尾部或头部，其中所述第三金属层的金属线段的密度大于所述第二金属层的第三金属线段的密度。
  8. 根据权利要求1至5中任一项所述的柔性显示基板，其特征在于，所述导电复合层包括第一金属层、第二金属层和第三金属层；
    第一金属层和第二金属层间的接触孔中的金属一端连接在第一金属层的金属线段的头部或尾部，接触孔中的金属另一端连接在第二金属层的金属线段的尾部或头部；
    第二金属层和第三金属层间的接触孔中的金属一端连接在第二金属层的金属线段的头部或尾部，接触孔中的金属另一端连接在第三金属层的金属线段的尾部或头部，
    其中，所述第一金属层的金属线段的密度大于所述第二金属层的金属线段的密度，所述第三金属层的金属线段的密度大于所述第二金属层的金属线段的密度，并且所述第一金属层的金属线段的密度小于所述第三金属层的金属线段的密度。
  9. 根据权利要求1至8中任一项所述的柔性显示基板，其特征在于，所述连续的金属导线用作数据线或栅极线。
  10. 根据权利要求1至9中任一项所述的柔性显示基板，其特征在于，所述金属线由铝、钛、钼或者铝合金、钛合金、钼合金中的一种材料制成。
  11. 根据权利要求1至10中任一项所述的柔性显示基板，其特征在于，所述绝缘层由硅氮化物或者硅氧化物制成。
  12. 根据权利要求1至11中任一项所述的柔性显示基板，其特征在于，所述柔性衬底的材料为聚酰亚胺、聚碳酸酯、聚丙烯酸酯、聚醚酰亚胺、聚醚砜或聚对苯二甲酸乙二醇酯中的一种。
  13. 一种柔性显示基板的制备方法，其特征在于，包括：
    制备柔性衬底；
    在所述柔性衬底上交替设置多个绝缘层和多个金属层，
    其中，在设置所述多个绝缘层和所述多个金属层过程中，还执行如下步骤：
    在所述多个金属层中的相邻金属层间的绝缘层上设置接触孔，所述接触孔中填充金属；
    在所述多个金属层中的每个金属层分隔设置具有相同或相近延伸方向的金属线段；
    接触孔中的金属将所述相邻金属层的金属线段进行交替连接，形成连续的金属导线。
  14. 根据权利要求13所述的柔性显示基板，其特征在于，包括：
    制备柔性衬底；
    在所述柔性衬底上形成第一绝缘层；
    在所述第一绝缘层上形成第一金属层，在所述第一金属层分隔设置相同或相近延伸方向的金属线段；
    在所述第一金属层上形成第二绝缘层，在所述第二绝缘层上设置接触孔，接触孔中填充金属；
    在所述第二绝缘层上形成第二金属层，在所述第二金属层分隔设置相同或相近延伸方向的金属线段，将接触孔中的金属一端连接在第一金属层的金属线段的头部或尾部，所述接触孔中的金属另一端连接在第二金属层的金属线段的尾部或头部。
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108831909A (zh) * 2018-06-07 2018-11-16 武汉华星光电半导体显示技术有限公司 柔性显示面板及显示装置
CN110957331A (zh) * 2019-12-26 2020-04-03 云谷（固安）科技有限公司 显示面板和显示装置

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* Cited by examiner, † Cited by third party
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CN106206613B (zh) 2016-08-24 2020-12-29 昆山工研院新型平板显示技术中心有限公司 一种柔性显示基板及其制备方法
CN106548979A (zh) * 2016-12-28 2017-03-29 武汉华星光电技术有限公司 层叠无机膜的蚀刻方法
CN108281428A (zh) * 2017-01-06 2018-07-13 昆山工研院新型平板显示技术中心有限公司 一种金属线及柔性显示面板
CN106684115A (zh) * 2017-01-18 2017-05-17 昆山工研院新型平板显示技术中心有限公司 一种金属导线及柔性显示面板
CN108694890B (zh) * 2017-04-05 2021-05-25 上海和辉光电股份有限公司 一种显示面板及显示装置
CN108695340A (zh) * 2017-04-05 2018-10-23 上海和辉光电有限公司 一种显示面板及显示装置
CN107864555B (zh) * 2017-12-09 2024-02-09 中国电子科技集团公司第四十三研究所 一种柔性电路板
CN108682303B (zh) * 2018-05-14 2020-05-19 云谷（固安）科技有限公司 柔性显示基板、柔性显示屏和电子终端设备
CN108922877A (zh) * 2018-06-29 2018-11-30 武汉华星光电半导体显示技术有限公司 显示面板
CN109031779B (zh) * 2018-07-25 2024-06-11 京东方科技集团股份有限公司 发光二极管基板、背光模组和显示装置
CN110797372A (zh) * 2018-08-01 2020-02-14 创王光电股份有限公司 可挠显示器
CN109545796A (zh) 2018-09-30 2019-03-29 武汉华星光电技术有限公司 一种曲面阵列基板及其制备方法
CN109860253B (zh) * 2019-01-31 2021-02-26 上海天马有机发光显示技术有限公司 一种柔性显示面板及柔性显示装置
CN111667764A (zh) * 2020-06-28 2020-09-15 昆山国显光电有限公司 一种柔性显示面板及显示装置
CN114188387B (zh) * 2021-12-09 2023-08-22 深圳市华星光电半导体显示技术有限公司 柔性显示面板

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101232013A (zh) * 2007-01-25 2008-07-30 奇美电子股份有限公司 有机发光显示元件及其制造方法
CN102945846A (zh) * 2012-09-28 2013-02-27 京东方科技集团股份有限公司 阵列基板及其制造方法、显示装置
CN106206613A (zh) * 2016-08-24 2016-12-07 昆山工研院新型平板显示技术中心有限公司 一种柔性显示基板及其制备方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05150263A (ja) * 1991-11-29 1993-06-18 Toshiba Corp アクテイブマトリツクス型液晶表示素子
JP4637451B2 (ja) * 2001-02-16 2011-02-23 イグニス・イノベイション・インコーポレーテッド 可撓性表示装置
US7242398B2 (en) * 2002-02-18 2007-07-10 Ignis Innovation Inc. Flexible display device
JP4452650B2 (ja) * 2005-05-31 2010-04-21 新光電気工業株式会社 配線基板およびその製造方法
KR100708735B1 (ko) * 2005-12-09 2007-04-17 삼성에스디아이 주식회사 유기 발광 디스플레이 장치 및 그 제조방법
JP5471104B2 (ja) * 2009-07-15 2014-04-16 株式会社村田製作所 フレキシブル配線基板
CN102144293B (zh) * 2009-11-27 2015-01-07 松下电器产业株式会社 发光显示装置
TWI429985B (zh) * 2011-04-13 2014-03-11 Au Optronics Corp 引線結構以及具有此引線結構的顯示面板
KR101950473B1 (ko) * 2012-10-05 2019-02-21 삼성디스플레이 주식회사 플렉서블 디스플레이 패널
US9601557B2 (en) * 2012-11-16 2017-03-21 Apple Inc. Flexible display
KR102222680B1 (ko) * 2013-02-01 2021-03-03 엘지디스플레이 주식회사 플렉서블 디스플레이 기판, 플렉서블 유기 발광 표시 장치 및 플렉서블 유기 발광 표시 장치 제조 방법
KR102066087B1 (ko) * 2013-05-28 2020-01-15 엘지디스플레이 주식회사 플렉서블 표시장치 및 그의 제조방법
US9377817B2 (en) * 2013-08-20 2016-06-28 Semiconductor Energy Laboratory Co., Ltd. Display device
KR20150075367A (ko) * 2013-12-25 2015-07-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
WO2015132694A1 (en) * 2014-03-07 2015-09-11 Semiconductor Energy Laboratory Co., Ltd. Touch sensor, touch panel, and manufacturing method of touch panel
KR102214476B1 (ko) * 2014-03-17 2021-02-10 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
JP6253541B2 (ja) * 2014-07-30 2017-12-27 株式会社ジャパンディスプレイ 表示装置
US9535522B2 (en) * 2014-12-22 2017-01-03 Lg Display Co., Ltd. Flexible organic light emitting diode display device
CN104538426B (zh) * 2014-12-26 2018-03-30 昆山工研院新型平板显示技术中心有限公司 柔性显示装置及其制造方法
KR102312260B1 (ko) * 2015-01-09 2021-10-13 삼성디스플레이 주식회사 플렉서블 터치 패널 및 플렉서블 표시 장치
KR102291865B1 (ko) * 2015-01-16 2021-08-20 삼성디스플레이 주식회사 가요성 표시 장치 및 그 제조 방법
KR102405257B1 (ko) * 2015-01-28 2022-06-03 삼성디스플레이 주식회사 표시 장치
KR102401013B1 (ko) * 2015-07-15 2022-05-24 삼성디스플레이 주식회사 플렉서블 디스플레이 장치 및 그 제조방법
CN205355054U (zh) * 2016-02-02 2016-06-29 昆山国显光电有限公司 显示器薄膜晶体管结构及显示器

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101232013A (zh) * 2007-01-25 2008-07-30 奇美电子股份有限公司 有机发光显示元件及其制造方法
CN102945846A (zh) * 2012-09-28 2013-02-27 京东方科技集团股份有限公司 阵列基板及其制造方法、显示装置
CN106206613A (zh) * 2016-08-24 2016-12-07 昆山工研院新型平板显示技术中心有限公司 一种柔性显示基板及其制备方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP3477702A4 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108831909A (zh) * 2018-06-07 2018-11-16 武汉华星光电半导体显示技术有限公司 柔性显示面板及显示装置
CN110957331A (zh) * 2019-12-26 2020-04-03 云谷（固安）科技有限公司 显示面板和显示装置

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