JP2019524620A5 - - Google Patents

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Publication number
JP2019524620A5
JP2019524620A5 JP2018569161A JP2018569161A JP2019524620A5 JP 2019524620 A5 JP2019524620 A5 JP 2019524620A5 JP 2018569161 A JP2018569161 A JP 2018569161A JP 2018569161 A JP2018569161 A JP 2018569161A JP 2019524620 A5 JP2019524620 A5 JP 2019524620A5
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JP
Japan
Prior art keywords
mbar
annealing
temperature
silicon
pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2018569161A
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English (en)
Japanese (ja)
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JP2019524620A (ja
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Publication date
Priority claimed from PL417804A external-priority patent/PL417804A1/pl
Application filed filed Critical
Publication of JP2019524620A publication Critical patent/JP2019524620A/ja
Publication of JP2019524620A5 publication Critical patent/JP2019524620A5/ja
Pending legal-status Critical Current

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JP2018569161A 2016-07-02 2017-06-30 シリコンカーバイドの表面に高品質グラフェンを調製するための方法 Pending JP2019524620A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
PL417804A PL417804A1 (pl) 2016-07-02 2016-07-02 Metoda syntezy wysokiej jakości grafenu na powierzchni węglika krzemu
PLP.417804 2016-07-02
PCT/IB2017/053969 WO2018007918A1 (en) 2016-07-02 2017-06-30 Method for preparation of high-quality graphene on the surface of silicon carbide

Publications (2)

Publication Number Publication Date
JP2019524620A JP2019524620A (ja) 2019-09-05
JP2019524620A5 true JP2019524620A5 (enExample) 2020-08-13

Family

ID=59772660

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018569161A Pending JP2019524620A (ja) 2016-07-02 2017-06-30 シリコンカーバイドの表面に高品質グラフェンを調製するための方法

Country Status (7)

Country Link
US (1) US20190226115A1 (enExample)
EP (1) EP3478634B1 (enExample)
JP (1) JP2019524620A (enExample)
KR (1) KR20190024909A (enExample)
ES (1) ES2901235T3 (enExample)
PL (2) PL417804A1 (enExample)
WO (1) WO2018007918A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PL241895B1 (pl) * 2019-09-23 2022-12-19 Univ Jagiellonski Sposób otrzymywania powierzchniowego kompozytu węglikowo- grafenowego o kontrolowanej morfologii powierzchni
CN112919456B (zh) * 2021-02-23 2023-09-22 南京大学 一种具有均一层厚的平整石墨烯生长方法及单层或双层石墨烯薄膜
CN115849352B (zh) * 2023-02-27 2023-05-16 太原理工大学 一种高效制备叠层石墨烯的方法
CN117303355A (zh) * 2023-10-16 2023-12-29 浙江大学杭州国际科创中心 一种利用循环加热制备石墨烯的方法
CN120174461B (zh) * 2025-04-07 2025-11-18 山东大学 一种在碳化硅衬底上外延均匀石墨烯的方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8142754B2 (en) * 2010-03-12 2012-03-27 The Regents Of The University Of California Method for synthesis of high quality graphene
JP5644175B2 (ja) * 2010-04-27 2014-12-24 和人 山内 SiC基板へのグラフェン成膜方法
WO2012036608A1 (en) 2010-09-16 2012-03-22 Rositza Yakimova Process for growth of graphene
KR101984697B1 (ko) 2012-12-21 2019-05-31 삼성전자주식회사 그래핀 구조체, 이를 포함한 그래핀 소자 및 그 제조 방법

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