KR20190024909A - 탄화규소의 표면 상의 고품질 그래핀 제조 방법 - Google Patents

탄화규소의 표면 상의 고품질 그래핀 제조 방법 Download PDF

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KR20190024909A
KR20190024909A KR1020187037935A KR20187037935A KR20190024909A KR 20190024909 A KR20190024909 A KR 20190024909A KR 1020187037935 A KR1020187037935 A KR 1020187037935A KR 20187037935 A KR20187037935 A KR 20187037935A KR 20190024909 A KR20190024909 A KR 20190024909A
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graphene
temperature
silicon
annealing
silicon carbide
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Korean (ko)
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표트르 치오혼
야체크 콜로지
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유니버시테트 야기엘론스키
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    • C—CHEMISTRY; METALLURGY
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    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
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    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
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    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
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    • H10D62/881—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being a two-dimensional material
    • H10D62/882—Graphene
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
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    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
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    • H01L21/02367—Substrates
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  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020187037935A 2016-07-02 2017-06-30 탄화규소의 표면 상의 고품질 그래핀 제조 방법 Ceased KR20190024909A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
PL417804A PL417804A1 (pl) 2016-07-02 2016-07-02 Metoda syntezy wysokiej jakości grafenu na powierzchni węglika krzemu
PLP.417804 2016-07-02
PCT/IB2017/053969 WO2018007918A1 (en) 2016-07-02 2017-06-30 Method for preparation of high-quality graphene on the surface of silicon carbide

Publications (1)

Publication Number Publication Date
KR20190024909A true KR20190024909A (ko) 2019-03-08

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KR1020187037935A Ceased KR20190024909A (ko) 2016-07-02 2017-06-30 탄화규소의 표면 상의 고품질 그래핀 제조 방법

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US (1) US20190226115A1 (enExample)
EP (1) EP3478634B1 (enExample)
JP (1) JP2019524620A (enExample)
KR (1) KR20190024909A (enExample)
ES (1) ES2901235T3 (enExample)
PL (2) PL417804A1 (enExample)
WO (1) WO2018007918A1 (enExample)

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Publication number Priority date Publication date Assignee Title
PL241895B1 (pl) * 2019-09-23 2022-12-19 Univ Jagiellonski Sposób otrzymywania powierzchniowego kompozytu węglikowo- grafenowego o kontrolowanej morfologii powierzchni
CN112919456B (zh) * 2021-02-23 2023-09-22 南京大学 一种具有均一层厚的平整石墨烯生长方法及单层或双层石墨烯薄膜
CN115849352B (zh) * 2023-02-27 2023-05-16 太原理工大学 一种高效制备叠层石墨烯的方法
CN117303355A (zh) * 2023-10-16 2023-12-29 浙江大学杭州国际科创中心 一种利用循环加热制备石墨烯的方法
CN120174461B (zh) * 2025-04-07 2025-11-18 山东大学 一种在碳化硅衬底上外延均匀石墨烯的方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110223094A1 (en) 2010-03-12 2011-09-15 The Regents Of The University Of California Method for synthesis of high quality graphene
US20140175458A1 (en) 2012-12-21 2014-06-26 Samsung Electronics Co., Ltd. Graphene structure, graphene device including same, and method of manufacturing graphene structure
US9150417B2 (en) 2010-09-16 2015-10-06 Graphensic Ab Process for growth of graphene

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5644175B2 (ja) * 2010-04-27 2014-12-24 和人 山内 ＳｉＣ基板へのグラフェン成膜方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110223094A1 (en) 2010-03-12 2011-09-15 The Regents Of The University Of California Method for synthesis of high quality graphene
US9150417B2 (en) 2010-09-16 2015-10-06 Graphensic Ab Process for growth of graphene
US20140175458A1 (en) 2012-12-21 2014-06-26 Samsung Electronics Co., Ltd. Graphene structure, graphene device including same, and method of manufacturing graphene structure

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Publication number Publication date
EP3478634A1 (en) 2019-05-08
PL3478634T3 (pl) 2022-04-11
PL417804A1 (pl) 2018-01-15
US20190226115A1 (en) 2019-07-25
ES2901235T3 (es) 2022-03-21
JP2019524620A (ja) 2019-09-05
WO2018007918A1 (en) 2018-01-11
EP3478634B1 (en) 2021-10-27

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