KR20190024909A - 탄화규소의 표면 상의 고품질 그래핀 제조 방법 - Google Patents

탄화규소의 표면 상의 고품질 그래핀 제조 방법 Download PDF

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KR20190024909A
KR20190024909A KR1020187037935A KR20187037935A KR20190024909A KR 20190024909 A KR20190024909 A KR 20190024909A KR 1020187037935 A KR1020187037935 A KR 1020187037935A KR 20187037935 A KR20187037935 A KR 20187037935A KR 20190024909 A KR20190024909 A KR 20190024909A
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graphene
temperature
silicon
annealing
silicon carbide
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Korean (ko)
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표트르 치오혼
야체크 콜로지
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유니버시테트 야기엘론스키
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
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    • C30B1/00—Single-crystal growth directly from the solid state
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
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    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
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    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
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    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • H01L29/1606—
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/881—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being a two-dimensional material
    • H10D62/882—Graphene
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2204/00—Structure or properties of graphene
    • C01B2204/20—Graphene characterized by its properties
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    • C01B2204/00—Structure or properties of graphene
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    • C01B2204/24—Thermal properties
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2204/00—Structure or properties of graphene
    • C01B2204/20—Graphene characterized by its properties
    • C01B2204/26—Mechanical properties
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    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/74—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by peak-intensities or a ratio thereof only
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2904—Silicon carbide
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
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    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3406—Carbon, e.g. diamond-like carbon

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020187037935A 2016-07-02 2017-06-30 탄화규소의 표면 상의 고품질 그래핀 제조 방법 Ceased KR20190024909A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
PL417804A PL417804A1 (pl) 2016-07-02 2016-07-02 Metoda syntezy wysokiej jakości grafenu na powierzchni węglika krzemu
PLP.417804 2016-07-02
PCT/IB2017/053969 WO2018007918A1 (en) 2016-07-02 2017-06-30 Method for preparation of high-quality graphene on the surface of silicon carbide

Publications (1)

Publication Number Publication Date
KR20190024909A true KR20190024909A (ko) 2019-03-08

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KR1020187037935A Ceased KR20190024909A (ko) 2016-07-02 2017-06-30 탄화규소의 표면 상의 고품질 그래핀 제조 방법

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Country Link
US (1) US20190226115A1 (enExample)
EP (1) EP3478634B1 (enExample)
JP (1) JP2019524620A (enExample)
KR (1) KR20190024909A (enExample)
ES (1) ES2901235T3 (enExample)
PL (2) PL417804A1 (enExample)
WO (1) WO2018007918A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PL241895B1 (pl) * 2019-09-23 2022-12-19 Univ Jagiellonski Sposób otrzymywania powierzchniowego kompozytu węglikowo- grafenowego o kontrolowanej morfologii powierzchni
CN112919456B (zh) * 2021-02-23 2023-09-22 南京大学 一种具有均一层厚的平整石墨烯生长方法及单层或双层石墨烯薄膜
CN115206462B (zh) * 2022-06-30 2026-03-13 哈尔滨工业大学 基于流动气体法模拟单晶碳化硅干氧热氧化工艺的方法
CN115849352B (zh) * 2023-02-27 2023-05-16 太原理工大学 一种高效制备叠层石墨烯的方法
CN117303355B (zh) * 2023-10-16 2026-01-13 浙江大学杭州国际科创中心 一种利用循环加热制备石墨烯的方法
CN120174461B (zh) * 2025-04-07 2025-11-18 山东大学 一种在碳化硅衬底上外延均匀石墨烯的方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110223094A1 (en) 2010-03-12 2011-09-15 The Regents Of The University Of California Method for synthesis of high quality graphene
US20140175458A1 (en) 2012-12-21 2014-06-26 Samsung Electronics Co., Ltd. Graphene structure, graphene device including same, and method of manufacturing graphene structure
US9150417B2 (en) 2010-09-16 2015-10-06 Graphensic Ab Process for growth of graphene

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5644175B2 (ja) * 2010-04-27 2014-12-24 和人 山内 ＳｉＣ基板へのグラフェン成膜方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110223094A1 (en) 2010-03-12 2011-09-15 The Regents Of The University Of California Method for synthesis of high quality graphene
US9150417B2 (en) 2010-09-16 2015-10-06 Graphensic Ab Process for growth of graphene
US20140175458A1 (en) 2012-12-21 2014-06-26 Samsung Electronics Co., Ltd. Graphene structure, graphene device including same, and method of manufacturing graphene structure

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WO2018007918A1 (en) 2018-01-11
PL417804A1 (pl) 2018-01-15
US20190226115A1 (en) 2019-07-25
JP2019524620A (ja) 2019-09-05
EP3478634B1 (en) 2021-10-27
ES2901235T3 (es) 2022-03-21
PL3478634T3 (pl) 2022-04-11
EP3478634A1 (en) 2019-05-08

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