JP2017199810A5 - - Google Patents

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Publication number
JP2017199810A5
JP2017199810A5 JP2016089735A JP2016089735A JP2017199810A5 JP 2017199810 A5 JP2017199810 A5 JP 2017199810A5 JP 2016089735 A JP2016089735 A JP 2016089735A JP 2016089735 A JP2016089735 A JP 2016089735A JP 2017199810 A5 JP2017199810 A5 JP 2017199810A5
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JP
Japan
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manufacturing
epitaxial wafer
hereinafter
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present
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JP2016089735A
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English (en)
Japanese (ja)
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JP2017199810A (ja
JP6648627B2 (ja
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Priority claimed from JP2016089735A external-priority patent/JP6648627B2/ja
Priority to JP2016089735A priority Critical patent/JP6648627B2/ja
Priority to US15/372,949 priority patent/US10370775B2/en
Priority to DE102017201744.9A priority patent/DE102017201744B4/de
Priority to KR1020170053627A priority patent/KR101943196B1/ko
Priority to CN201710287689.4A priority patent/CN107316805A/zh
Publication of JP2017199810A publication Critical patent/JP2017199810A/ja
Publication of JP2017199810A5 publication Critical patent/JP2017199810A5/ja
Priority to US16/429,905 priority patent/US10711372B2/en
Publication of JP6648627B2 publication Critical patent/JP6648627B2/ja
Application granted granted Critical
Expired - Fee Related legal-status Critical Current
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JP2016089735A 2016-04-27 2016-04-27 炭化珪素エピタキシャルウエハの製造方法、炭化珪素半導体装置の製造方法及び炭化珪素エピタキシャルウエハの製造装置 Expired - Fee Related JP6648627B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2016089735A JP6648627B2 (ja) 2016-04-27 2016-04-27 炭化珪素エピタキシャルウエハの製造方法、炭化珪素半導体装置の製造方法及び炭化珪素エピタキシャルウエハの製造装置
US15/372,949 US10370775B2 (en) 2016-04-27 2016-12-08 Silicon carbide epitaxial wafer manufacturing method, silicon carbide semiconductor device manufacturing method and silicon carbide epitaxial wafer manufacturing apparatus
DE102017201744.9A DE102017201744B4 (de) 2016-04-27 2017-02-03 Verfahren zum Herstellen eines Siliziumkarbid-Epitaxialwafers, Verfahren zum Herstellen einer Siliziumkarbid-Halbleiteranordnung und Vorrichtung zum Herstellen eines Siliziumkarbid-Epitaxialwafers
KR1020170053627A KR101943196B1 (ko) 2016-04-27 2017-04-26 탄화규소 에피텍셜 웨이퍼의 제조 방법, 탄화규소 반도체 장치의 제조 방법 및 탄화규소 에피텍셜 웨이퍼의 제조 장치
CN201710287689.4A CN107316805A (zh) 2016-04-27 2017-04-27 碳化硅外延晶片的制造方法、碳化硅半导体装置的制造方法及碳化硅外延晶片的制造装置
US16/429,905 US10711372B2 (en) 2016-04-27 2019-06-03 Silicon carbide epitaxial wafer manufacturing method, silicon carbide semiconductor device manufacturing method and silicon carbide epitaxial wafer manufacturing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016089735A JP6648627B2 (ja) 2016-04-27 2016-04-27 炭化珪素エピタキシャルウエハの製造方法、炭化珪素半導体装置の製造方法及び炭化珪素エピタキシャルウエハの製造装置

Publications (3)

Publication Number Publication Date
JP2017199810A JP2017199810A (ja) 2017-11-02
JP2017199810A5 true JP2017199810A5 (enExample) 2018-09-06
JP6648627B2 JP6648627B2 (ja) 2020-02-14

Family

ID=60081753

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016089735A Expired - Fee Related JP6648627B2 (ja) 2016-04-27 2016-04-27 炭化珪素エピタキシャルウエハの製造方法、炭化珪素半導体装置の製造方法及び炭化珪素エピタキシャルウエハの製造装置

Country Status (5)

Country Link
US (2) US10370775B2 (enExample)
JP (1) JP6648627B2 (enExample)
KR (1) KR101943196B1 (enExample)
CN (1) CN107316805A (enExample)
DE (1) DE102017201744B4 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11469732B2 (en) * 2018-03-30 2022-10-11 Hrl Laboratories, Llc Method of fabricating a SiC resonator
US12020924B2 (en) 2018-05-09 2024-06-25 Sumitomo Electric Industries, Ltd. Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor device
CN110499530B (zh) * 2019-08-28 2023-09-12 大同新成新材料股份有限公司 一种电子碳化硅芯片的生产设备及其方法
IT201900015416A1 (it) * 2019-09-03 2021-03-03 St Microelectronics Srl Apparecchio per la crescita di una fetta di materiale semiconduttore, in particolare di carburo di silicio, e procedimento di fabbricazione associato
CN111020693B (zh) * 2019-12-27 2021-01-29 季华实验室 一种碳化硅外延生长设备的进气装置
WO2024232252A1 (ja) * 2023-05-11 2024-11-14 住友電気工業株式会社 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
WO2025108923A1 (de) * 2023-11-22 2025-05-30 Aixtron Se VERFAHREN UND VORRICHTUNG ZUM ABSCHEIDEN n-DOTIERTEM SiC

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001335937A (ja) * 2000-05-29 2001-12-07 Mitsubishi Heavy Ind Ltd 金属汚染低減方法及びプラズマ装置の再生方法
JP2003282445A (ja) 2002-03-25 2003-10-03 Sanyo Electric Co Ltd 半導体薄膜の製造方法
EP1570108B1 (en) * 2002-12-10 2009-02-18 E.T.C. Epitaxial Technology Center SRL Susceptor system
US7288284B2 (en) * 2004-03-26 2007-10-30 Taiwan Semiconductor Manufacturing Co., Ltd. Post-cleaning chamber seasoning method
US7604841B2 (en) 2004-03-31 2009-10-20 Tokyo Electron Limited Method for extending time between chamber cleaning processes
JP4534978B2 (ja) 2005-12-21 2010-09-01 トヨタ自動車株式会社 半導体薄膜製造装置
US7967912B2 (en) * 2007-11-29 2011-06-28 Nuflare Technology, Inc. Manufacturing apparatus for semiconductor device and manufacturing method for semiconductor device
US8409352B2 (en) * 2010-03-01 2013-04-02 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device, method of manufacturing substrate and substrate processing apparatus
JP2012055035A (ja) 2010-08-31 2012-03-15 Sumitomo Electric Ind Ltd 配電部材、ステータ、及びモータ
JP2012080035A (ja) * 2010-10-06 2012-04-19 Hitachi Kokusai Electric Inc 基板処理装置及び基板製造方法
JP2013016562A (ja) 2011-06-30 2013-01-24 Nuflare Technology Inc 気相成長方法
JP6232680B2 (ja) * 2013-09-06 2017-11-22 大陽日酸株式会社 サセプタのクリーニング方法
JP2016089735A (ja) 2014-11-06 2016-05-23 大豊工業株式会社 ターボチャージャーの軸受ハウジング

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