DE102017201744B4 - Verfahren zum Herstellen eines Siliziumkarbid-Epitaxialwafers, Verfahren zum Herstellen einer Siliziumkarbid-Halbleiteranordnung und Vorrichtung zum Herstellen eines Siliziumkarbid-Epitaxialwafers - Google Patents

Verfahren zum Herstellen eines Siliziumkarbid-Epitaxialwafers, Verfahren zum Herstellen einer Siliziumkarbid-Halbleiteranordnung und Vorrichtung zum Herstellen eines Siliziumkarbid-Epitaxialwafers Download PDF

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Publication number
DE102017201744B4
DE102017201744B4 DE102017201744.9A DE102017201744A DE102017201744B4 DE 102017201744 B4 DE102017201744 B4 DE 102017201744B4 DE 102017201744 A DE102017201744 A DE 102017201744A DE 102017201744 B4 DE102017201744 B4 DE 102017201744B4
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Prior art keywords
silicon carbide
growth furnace
gas
carbide epitaxial
epitaxial wafer
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Expired - Fee Related
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DE102017201744.9A
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German (de)
English (en)
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DE102017201744A1 (de
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Akihito Ohno
Kenichi Hamano
Takashi Kanazawa
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2904—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3408—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/36—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6349—Deposition of epitaxial materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6903—Inorganic materials containing silicon
    • H10P14/6905—Inorganic materials containing silicon being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE102017201744.9A 2016-04-27 2017-02-03 Verfahren zum Herstellen eines Siliziumkarbid-Epitaxialwafers, Verfahren zum Herstellen einer Siliziumkarbid-Halbleiteranordnung und Vorrichtung zum Herstellen eines Siliziumkarbid-Epitaxialwafers Expired - Fee Related DE102017201744B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-089735 2016-04-27
JP2016089735A JP6648627B2 (ja) 2016-04-27 2016-04-27 炭化珪素エピタキシャルウエハの製造方法、炭化珪素半導体装置の製造方法及び炭化珪素エピタキシャルウエハの製造装置

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DE102017201744A1 DE102017201744A1 (de) 2017-11-02
DE102017201744B4 true DE102017201744B4 (de) 2022-06-23

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DE102017201744.9A Expired - Fee Related DE102017201744B4 (de) 2016-04-27 2017-02-03 Verfahren zum Herstellen eines Siliziumkarbid-Epitaxialwafers, Verfahren zum Herstellen einer Siliziumkarbid-Halbleiteranordnung und Vorrichtung zum Herstellen eines Siliziumkarbid-Epitaxialwafers

Country Status (5)

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US (2) US10370775B2 (enExample)
JP (1) JP6648627B2 (enExample)
KR (1) KR101943196B1 (enExample)
CN (1) CN107316805A (enExample)
DE (1) DE102017201744B4 (enExample)

Families Citing this family (7)

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Publication number Priority date Publication date Assignee Title
US11509277B2 (en) 2018-03-30 2022-11-22 Hrl Laboratories, Llc Piezoelectric single crystal silicon carbide microelectromechanical resonators
US12020924B2 (en) 2018-05-09 2024-06-25 Sumitomo Electric Industries, Ltd. Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor device
CN110499530B (zh) * 2019-08-28 2023-09-12 大同新成新材料股份有限公司 一种电子碳化硅芯片的生产设备及其方法
IT201900015416A1 (it) * 2019-09-03 2021-03-03 St Microelectronics Srl Apparecchio per la crescita di una fetta di materiale semiconduttore, in particolare di carburo di silicio, e procedimento di fabbricazione associato
CN111020693B (zh) * 2019-12-27 2021-01-29 季华实验室 一种碳化硅外延生长设备的进气装置
JPWO2024232252A1 (enExample) * 2023-05-11 2024-11-14
KR20260114581A (ko) * 2023-11-22 2026-07-22 아익스트론 에스이 n-도핑된 SiC를 증착하기 위한 방법 및 디바이스

Citations (5)

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Publication number Priority date Publication date Assignee Title
US20050214455A1 (en) 2004-03-26 2005-09-29 Taiwan Semiconductor Manufacturing Co., Ltd. Post-cleaning chamber seasoning method
US20050221001A1 (en) 2004-03-31 2005-10-06 Tokyo Electron Limited Of Tbs Broadcast Center Method for extending time between chamber cleaning processes
JP4534978B2 (ja) 2005-12-21 2010-09-01 トヨタ自動車株式会社 半導体薄膜製造装置
JP2012055035A (ja) 2010-08-31 2012-03-15 Sumitomo Electric Ind Ltd 配電部材、ステータ、及びモータ
JP2013016562A (ja) 2011-06-30 2013-01-24 Nuflare Technology Inc 気相成長方法

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JP2001335937A (ja) * 2000-05-29 2001-12-07 Mitsubishi Heavy Ind Ltd 金属汚染低減方法及びプラズマ装置の再生方法
JP2003282445A (ja) 2002-03-25 2003-10-03 Sanyo Electric Co Ltd 半導体薄膜の製造方法
ATE423226T1 (de) * 2002-12-10 2009-03-15 E T C Epitaxial Technology Ct Suszeptorsystem
US7967912B2 (en) * 2007-11-29 2011-06-28 Nuflare Technology, Inc. Manufacturing apparatus for semiconductor device and manufacturing method for semiconductor device
US8409352B2 (en) * 2010-03-01 2013-04-02 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device, method of manufacturing substrate and substrate processing apparatus
JP2012080035A (ja) * 2010-10-06 2012-04-19 Hitachi Kokusai Electric Inc 基板処理装置及び基板製造方法
JP6232680B2 (ja) * 2013-09-06 2017-11-22 大陽日酸株式会社 サセプタのクリーニング方法
JP2016089735A (ja) 2014-11-06 2016-05-23 大豊工業株式会社 ターボチャージャーの軸受ハウジング

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050214455A1 (en) 2004-03-26 2005-09-29 Taiwan Semiconductor Manufacturing Co., Ltd. Post-cleaning chamber seasoning method
US20050221001A1 (en) 2004-03-31 2005-10-06 Tokyo Electron Limited Of Tbs Broadcast Center Method for extending time between chamber cleaning processes
JP4534978B2 (ja) 2005-12-21 2010-09-01 トヨタ自動車株式会社 半導体薄膜製造装置
JP2012055035A (ja) 2010-08-31 2012-03-15 Sumitomo Electric Ind Ltd 配電部材、ステータ、及びモータ
JP2013016562A (ja) 2011-06-30 2013-01-24 Nuflare Technology Inc 気相成長方法

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Publication number Publication date
US10370775B2 (en) 2019-08-06
KR101943196B1 (ko) 2019-01-28
DE102017201744A1 (de) 2017-11-02
US20190284718A1 (en) 2019-09-19
KR20170122673A (ko) 2017-11-06
US20170314160A1 (en) 2017-11-02
JP6648627B2 (ja) 2020-02-14
US10711372B2 (en) 2020-07-14
CN107316805A (zh) 2017-11-03
JP2017199810A (ja) 2017-11-02

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