JP2017199810A5 - - Google Patents
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- JP2017199810A5 JP2017199810A5 JP2016089735A JP2016089735A JP2017199810A5 JP 2017199810 A5 JP2017199810 A5 JP 2017199810A5 JP 2016089735 A JP2016089735 A JP 2016089735A JP 2016089735 A JP2016089735 A JP 2016089735A JP 2017199810 A5 JP2017199810 A5 JP 2017199810A5
- Authority
- JP
- Japan
- Prior art keywords
- manufacturing
- epitaxial wafer
- hereinafter
- flowchart showing
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000004519 manufacturing process Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N Silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
Description
図２は、本発明の実施の形態１に係る炭化珪素エピタキシャルウエハの製造方法を示すフローチャートである。以下、図１，２を用いて炭化珪素エピタキシャルウエハの製造方法を説明する。
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016089735A JP6648627B2 (ja) | 2016-04-27 | 2016-04-27 | 炭化珪素エピタキシャルウエハの製造方法、炭化珪素半導体装置の製造方法及び炭化珪素エピタキシャルウエハの製造装置 |
| US15/372,949 US10370775B2 (en) | 2016-04-27 | 2016-12-08 | Silicon carbide epitaxial wafer manufacturing method, silicon carbide semiconductor device manufacturing method and silicon carbide epitaxial wafer manufacturing apparatus |
| DE102017201744.9A DE102017201744B4 (de) | 2016-04-27 | 2017-02-03 | Verfahren zum Herstellen eines Siliziumkarbid-Epitaxialwafers, Verfahren zum Herstellen einer Siliziumkarbid-Halbleiteranordnung und Vorrichtung zum Herstellen eines Siliziumkarbid-Epitaxialwafers |
| KR1020170053627A KR101943196B1 (ko) | 2016-04-27 | 2017-04-26 | 탄화규소 에피텍셜 웨이퍼의 제조 방법, 탄화규소 반도체 장치의 제조 방법 및 탄화규소 에피텍셜 웨이퍼의 제조 장치 |
| CN201710287689.4A CN107316805A (zh) | 2016-04-27 | 2017-04-27 | 碳化硅外延晶片的制造方法、碳化硅半导体装置的制造方法及碳化硅外延晶片的制造装置 |
| US16/429,905 US10711372B2 (en) | 2016-04-27 | 2019-06-03 | Silicon carbide epitaxial wafer manufacturing method, silicon carbide semiconductor device manufacturing method and silicon carbide epitaxial wafer manufacturing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016089735A JP6648627B2 (ja) | 2016-04-27 | 2016-04-27 | 炭化珪素エピタキシャルウエハの製造方法、炭化珪素半導体装置の製造方法及び炭化珪素エピタキシャルウエハの製造装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017199810A JP2017199810A (ja) | 2017-11-02 |
| JP2017199810A5 true JP2017199810A5 (ja) | 2018-09-06 |
| JP6648627B2 JP6648627B2 (ja) | 2020-02-14 |
Family
ID=60081753
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016089735A Expired - Fee Related JP6648627B2 (ja) | 2016-04-27 | 2016-04-27 | 炭化珪素エピタキシャルウエハの製造方法、炭化珪素半導体装置の製造方法及び炭化珪素エピタキシャルウエハの製造装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US10370775B2 (ja) |
| JP (1) | JP6648627B2 (ja) |
| KR (1) | KR101943196B1 (ja) |
| CN (1) | CN107316805A (ja) |
| DE (1) | DE102017201744B4 (ja) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11509277B2 (en) | 2018-03-30 | 2022-11-22 | Hrl Laboratories, Llc | Piezoelectric single crystal silicon carbide microelectromechanical resonators |
| US12020924B2 (en) | 2018-05-09 | 2024-06-25 | Sumitomo Electric Industries, Ltd. | Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor device |
| CN110499530B (zh) * | 2019-08-28 | 2023-09-12 | 大同新成新材料股份有限公司 | 一种电子碳化硅芯片的生产设备及其方法 |
| CN111020693B (zh) * | 2019-12-27 | 2021-01-29 | 季华实验室 | 一种碳化硅外延生长设备的进气装置 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001335937A (ja) * | 2000-05-29 | 2001-12-07 | Mitsubishi Heavy Ind Ltd | 金属汚染低減方法及びプラズマ装置の再生方法 |
| JP2003282445A (ja) | 2002-03-25 | 2003-10-03 | Sanyo Electric Co Ltd | 半導体薄膜の製造方法 |
| AU2002368439A1 (en) * | 2002-12-10 | 2004-06-30 | Etc Srl | Susceptor system |
| US7288284B2 (en) * | 2004-03-26 | 2007-10-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Post-cleaning chamber seasoning method |
| US7604841B2 (en) * | 2004-03-31 | 2009-10-20 | Tokyo Electron Limited | Method for extending time between chamber cleaning processes |
| JP4534978B2 (ja) | 2005-12-21 | 2010-09-01 | トヨタ自動車株式会社 | 半導体薄膜製造装置 |
| US7967912B2 (en) * | 2007-11-29 | 2011-06-28 | Nuflare Technology, Inc. | Manufacturing apparatus for semiconductor device and manufacturing method for semiconductor device |
| US8409352B2 (en) * | 2010-03-01 | 2013-04-02 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device, method of manufacturing substrate and substrate processing apparatus |
| JP2012055035A (ja) | 2010-08-31 | 2012-03-15 | Sumitomo Electric Ind Ltd | 配電部材、ステータ、及びモータ |
| JP2012080035A (ja) * | 2010-10-06 | 2012-04-19 | Hitachi Kokusai Electric Inc | 基板処理装置及び基板製造方法 |
| JP2013016562A (ja) | 2011-06-30 | 2013-01-24 | Nuflare Technology Inc | 気相成長方法 |
| JP6232680B2 (ja) * | 2013-09-06 | 2017-11-22 | 大陽日酸株式会社 | サセプタのクリーニング方法 |
| JP2016089735A (ja) | 2014-11-06 | 2016-05-23 | 大豊工業株式会社 | ターボチャージャーの軸受ハウジング |
-
2016
- 2016-04-27 JP JP2016089735A patent/JP6648627B2/ja not_active Expired - Fee Related
- 2016-12-08 US US15/372,949 patent/US10370775B2/en not_active Expired - Fee Related
-
2017
- 2017-02-03 DE DE102017201744.9A patent/DE102017201744B4/de not_active Expired - Fee Related
- 2017-04-26 KR KR1020170053627A patent/KR101943196B1/ko active IP Right Grant
- 2017-04-27 CN CN201710287689.4A patent/CN107316805A/zh active Pending
-
2019
- 2019-06-03 US US16/429,905 patent/US10711372B2/en not_active Expired - Fee Related
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