JP2019517150A - ボディ領域拡張部を用いた炭化ケイ素金属酸化物半導体(mos)デバイスセルにおける電界シールド - Google Patents
ボディ領域拡張部を用いた炭化ケイ素金属酸化物半導体(mos)デバイスセルにおける電界シールド Download PDFInfo
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- JP2019517150A JP2019517150A JP2018561263A JP2018561263A JP2019517150A JP 2019517150 A JP2019517150 A JP 2019517150A JP 2018561263 A JP2018561263 A JP 2018561263A JP 2018561263 A JP2018561263 A JP 2018561263A JP 2019517150 A JP2019517150 A JP 2019517150A
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- 210000000746 body region Anatomy 0.000 title claims abstract description 307
- 239000004065 semiconductor Substances 0.000 title claims abstract description 54
- 230000005684 electric field Effects 0.000 title abstract description 35
- 229910010271 silicon carbide Inorganic materials 0.000 title description 93
- 229910044991 metal oxide Inorganic materials 0.000 title description 2
- -1 silicon carbide metal oxide Chemical class 0.000 title 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 94
- 238000000034 method Methods 0.000 claims description 67
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 230000005669 field effect Effects 0.000 claims description 6
- 239000007943 implant Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000001459 lithography Methods 0.000 claims description 3
- 230000000873 masking effect Effects 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 1
- 230000007774 longterm Effects 0.000 abstract description 6
- 210000004027 cell Anatomy 0.000 description 371
- 238000013461 design Methods 0.000 description 27
- 230000001413 cellular effect Effects 0.000 description 18
- 239000000758 substrate Substances 0.000 description 7
- 230000008901 benefit Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000002513 implantation Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 210000005056 cell body Anatomy 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
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- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
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Abstract
Description
4 第1の表面
6 第2の表面
10 MOSFETデバイス
12 ドレインコンタクト
14 基板層
16 ドリフト領域
18 ウェル領域
20 ソース領域
22 ソースコンタクト
24 誘電体層
26 ゲート電極
28 チャネル領域
29 JFET領域
30 コンタクト抵抗
38 ドリフト抵抗
39 ボディ領域
40 基板抵抗
41 ストライプデバイス
42 ソースコンタクト領域
44 ボディコンタクト領域
49 距離
50 正方形デバイスセル
51 レイアウト
52 レイアウト
54 六角形デバイスセル
55 レイアウト
60 距離
64 矢印
65 中心
66 矢印
68 側面
69 コーナー
70 グラフ
72 第1の曲線
74 第2の曲線
80 グラフ
82 第1の曲線
84 第2の曲線
86 グラフ
87 第1の曲線
88 第2の曲線
90 デバイスレイアウト
92 正方形デバイスセル
94 ボディ領域拡張部
95 拡張部幅
96 矢印
100 デバイスレイアウト
110 デバイスレイアウト
120 デバイスレイアウト
130 デバイスレイアウト
140 デバイスレイアウト
150 デバイスレイアウト
160 デバイスレイアウト
170 デバイスレイアウト
172 矩形デバイスセル
180 デバイスレイアウト
190 デバイスレイアウト
200 デバイスレイアウト
210 デバイスレイアウト
220 デバイスレイアウト
222 六角形デバイスセル
222A デバイスセル
222B デバイスセル
230 デバイスレイアウト
240 デバイスレイアウト
250 デバイスレイアウト
260 デバイスレイアウト
270 デバイスレイアウト
280 デバイスレイアウト
290 デバイスレイアウト
300 デバイスレイアウト
310 デバイスレイアウト
312 六角形デバイスセル
320 デバイスレイアウト
Claims (20)
- 第1の導電型を有する半導体デバイス層(2)内に少なくとも部分的に配置された複数のデバイスセル(50、54)であって、前記複数のデバイスセル(50、54)のそれぞれが、
前記デバイスセル(50、54)の中心の近くに配置された第2の導電型を有するボディ領域(39)と、
前記デバイスセル(50、54)の前記ボディ領域(39)に隣接して配置された前記第1の導電型を有するソース領域(20)と、
前記デバイスセル(50、54)の前記ソース領域(20)に隣接して配置された前記第2の導電型を有するチャネル領域(28)と、
前記デバイスセル(50、54)の前記チャネル領域(28)に隣接して配置された前記第1の導電型を有するJFET領域(29)であり、前記デバイスセル(50、54)の前記チャネル領域(28)と、前記複数のデバイスセル(50、54)のうちの隣り合うデバイスセル(50、54)のチャネル領域(28)の平行な部分との間に平行なJFET幅(49)を有する、JFET領域(29)と、
を備える、複数のデバイスセル(50、54)を備え、
前記複数のデバイスセル(50、54)のうちの少なくとも1つのデバイスセル(50、54)が、前記少なくとも1つのデバイスセル(50、54)のボディ領域拡張部(94)と前記第2の導電型を有する前記隣り合うデバイスセル(50、54)の領域との間の距離(60)が前記平行なJFET幅(49)以下となるように、前記少なくとも1つのデバイスセル(50、54)の前記ボディ領域(39)から外に向かって、前記少なくとも1つのデバイスセル(50、54)の前記ソース領域(20)を通って、前記少なくとも1つのデバイスセル(50、54)の前記チャネル領域(28)を通って、前記JFET領域(29)内へと延出する前記第2の導電型を有するボディ領域拡張部(94)を備える、
デバイス。 - 前記半導体デバイス層(2)が炭化ケイ素(SiC)半導体デバイス層である、請求項1記載のデバイス。
- 前記少なくとも1つのデバイスセル(50、54)の前記ボディ領域拡張部(94)と前記第2の導電型を有する前記隣り合うデバイスセル(50、54)の前記領域との間の前記距離(60)が前記平行なJFET幅(49)よりも小さい、請求項1記載のデバイス。
- 前記少なくとも1つのデバイスセル(50、54)の前記ボディ領域拡張部(94)の少なくとも一部の上に配置されたオーミックコンタクトを含む、請求項1記載のデバイス。
- 前記少なくとも1つのデバイスセル(50、54)の前記ボディ領域拡張部(94)がおよそ0.1μm〜およそ1μmの幅(95)を有する、請求項1記載のデバイス。
- 前記デバイスセル(50、54)の前記ボディ領域拡張部(94)の前記幅(95)がおよそ0.1μm〜およそ0.5μmである、請求項5記載のデバイス。
- 前記少なくとも1つのデバイスセル(50、54)の前記ボディ領域拡張部(94)の前記幅(95)が前記ボディ領域拡張部(94)の長さにわたって変化する、請求項5記載のデバイス。
- 前記複数のデバイスセル(50、54)のうちの少なくとも2つのデバイスセル(50、54)がそれぞれのボディ領域拡張部(94)を含み、前記少なくとも2つのデバイスセル(50、54)の前記ボディ領域拡張部(94)が互いに向かって延出し、互いにオーバラップする、請求項1記載のデバイス。
- 前記少なくとも1つのデバイスセル(50、54)の前記ボディ領域拡張部(94)が前記少なくとも1つのデバイスセル(50、54)の前記チャネル領域(28)のすべてのコーナーを通っては延出しない、請求項1記載のデバイス。
- 前記複数のデバイスセル(50、54)のそれぞれがそれぞれのボディ拡張部を含む、請求項1記載のデバイス。
- 前記少なくとも1つのデバイスセル(50、54)に隣接して配置された前記複数のデバイスセル(50、54)の1つまたは複数のデバイスセル(50、54)がそれぞれのボディ領域拡張部(94)を含まず、前記1つまたは複数のデバイスセル(50、54)が前記少なくとも1つのデバイスセル(50、54)の前記ボディ領域拡張部(94)によってシールドされている、請求項1記載のデバイス。
- 前記複数のデバイスセル(50、54)のそれぞれが実質的に正方形、六角形、細長い矩形形状、または細長い六角形形状を有する、請求項1記載のデバイス。
- 電界効果トランジスタ(FET)、絶縁ゲートバイポーラトランジスタ(IGBT)、または絶縁ベースMOS制御サイリスター(IBMCT)である、請求項1記載のデバイス。
- デバイスセル(50、54)のウェル領域(18)を半導体層に注入するステップであって、前記ウェル領域(18)が前記デバイスセル(50、54)のチャネル領域(28)を含む、ステップと、
前記デバイスセル(50、54)の前記ウェル領域(18)に隣接して前記デバイスセル(50、54)のソース領域(20)を前記半導体層に注入するステップと、
前記デバイスセル(50、54)の前記ソース領域(20)に隣接して前記デバイスセル(50、54)のボディ領域(39)を前記半導体層に注入するステップと、
前記デバイスセル(50、54)の前記ボディ領域(39)から外に向かって、前記デバイスセル(50、54)の前記ソース領域(20)の一部を通って、前記デバイスセル(50、54)の前記チャネル領域(28)の一部を通って延出するボディ領域拡張部(94)を前記半導体層に注入するステップであって、前記デバイスセル(50、54)の前記ボディ領域拡張部(94)と、隣り合うデバイスセル(50、54)のチャネル領域(28)との間の距離(60)が、前記デバイスセル(50、54)の前記チャネル領域(28)の平行な部分と、前記隣り合うデバイスセル(50、54)の前記チャネル領域(28)との間の距離(49)以下である、ステップと、
を含む、デバイスセル(50、54)を製造する方法。 - 前記ボディ領域拡張部(94)を注入するステップが、前記ボディ領域(39)が同じマスキング/リソグラフィ/注入プロセスを利用して注入されるのと同時に前記ボディ領域拡張部(94)を注入するステップを含む、請求項14記載の方法。
- 前記ボディ領域拡張部(94)を注入するステップが、終端領域が同じマスキング/リソグラフィ/注入プロセスを利用して注入されるのと同時に前記ボディ領域拡張部(94)を注入するステップを含む、請求項14記載の方法。
- 前記ボディ領域拡張部(94)の少なくとも一部の上に金属コンタクトを堆積させるステップを含む、請求項14記載の方法。
- 半導体デバイス層(2)が炭化ケイ素(SiC)半導体デバイス層である、請求項14記載の方法。
- 前記デバイスセル(50、54)が実質的に細長い矩形形状または細長い六角形形状を有する、請求項14記載の方法。
- 前記デバイスセル(50、54)が電界効果トランジスタ(FET)、絶縁ゲートバイポーラトランジスタ(IGBT)、または絶縁ベースMOS制御サイリスター(IBMCT)デバイスの一部分である、請求項14記載の方法。
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