JP2019509399A - 基材上に硬質材料層を製造するための方法、硬質材料層、切削工具及び被膜源 - Google Patents
基材上に硬質材料層を製造するための方法、硬質材料層、切削工具及び被膜源 Download PDFInfo
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- JP2019509399A JP2019509399A JP2018546658A JP2018546658A JP2019509399A JP 2019509399 A JP2019509399 A JP 2019509399A JP 2018546658 A JP2018546658 A JP 2018546658A JP 2018546658 A JP2018546658 A JP 2018546658A JP 2019509399 A JP2019509399 A JP 2019509399A
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- crtan
- altin
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- multilayer coating
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23B—TURNING; BORING
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
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- C—CHEMISTRY; METALLURGY
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- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
- C23C28/341—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one carbide layer
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- C23C28/40—Coatings including alternating layers following a pattern, a periodic or defined repetition
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- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
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- C23C28/42—Coatings including alternating layers following a pattern, a periodic or defined repetition characterized by the composition of the alternating layers
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- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/10—Sintering only
- B22F3/105—Sintering only by using electric current other than for infrared radiant energy, laser radiation or plasma ; by ultrasonic bonding
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Abstract
Description
BL: AlTiN/CrTaN二重層。ここで、基材上に厚さ2μmのAlTiNが堆積され、その上に厚さ2.9μmのCrTaNが堆積された。
ML: AlTiNの基層被膜とその上に構築されたCrTaN/AlTiN多層被膜系。ここで、AlTiN基層は厚さ1.8μmに、CrTaN/AlTiN多層被膜系は厚さが3μmに施された。多層被膜系の個々の被膜は厚さが約15nmであった。
ML+DS: AlTiN基層の上にAlTiN/CrTaN多層被膜系が構築され、その上にCrTaN被覆層が堆積された。CrTAN被覆層の厚さは1.1μm、AlTiN/CrTaN多層被膜系の厚さは2μm、AlTiN基層の厚さは1.9μmであった。多層被膜系の個々の被膜の厚さは約15nmであった。
SL: 層厚が2.5μmのCrTaN単層
Ref.1−PM: 厚さ2.8μmの60Al/40Ti複合ターゲットから堆積されたAlTiN単層から成る参照被膜
Ref.2−CC: 厚さ3μmの60Al/40TiNプラグターゲットから堆積されたAlTiN単層から成る参照被膜
2 Ta又はTa混合結晶相
3 TaCr2相
Claims (20)
- 物理気相蒸着(PVD)によってCrTaNとAlTiNとを交互に堆積することにより基材上に多層被膜系が施されることを特徴とする基材上に硬質材料層を製造するための方法。
- CrTaNが、複合ターゲット、有利には1〜60原子%のTa含有量、特に有利には20〜30原子%のTa含有量、特に有利には25原子%Ta含有量を有する複合ターゲット、から堆積されることを特徴とする請求項1に記載の方法。
- AlTiNが、複合ターゲット、有利には10〜80原子%のTi含有量、特に有利には25〜50原子%のTi含有量、特に有利には40原子%のTi含有量を有する複合ターゲット、から堆積されることを特徴とする請求項1又は2記載の方法。
- AlTiNが、原子組成AlxTi1−xN(式中、GDOES又はEDXで測定して、0.2≦x≦0.9、有利には0.4≦x≦0.8、特に有利には0.5≦x≦0.7である。)で基材上に施されることを特徴とする請求項1〜3のいずれか1項に記載の方法。
- CrTaNが原子組成CryTa1−yN(式中、GDOES又はEDXで測定して、0.01≦y≦0.65、有利には0.2≦y≦0.4、特に有利には0.25≦y≦0.35である。)で基材上に施されることを特徴とする請求項1〜4のいずれか1項に記載の方法。
- 多層被膜系の個々の層が、5〜200ナノメータ、有利には10〜100ナノメータ、特に有利には15ナノメータ、の厚さで堆積されることを特徴とする請求項1〜5のいずれか1項に記載の方法。
- 多層被膜系において、15〜5,000、有利には25〜1,000、特に有利には50〜250、の数の層が交互に堆積されることを特徴とする請求項1〜6のいずれか1項に記載の方法。
- 多層被膜系において、AlTiNの代わりに、少なくとも1つのAlTiXN被膜がCrTaNと交互に堆積され(ここで、X=Ta、V、Si、Mo又はHfである。)、ここで、AlTiXNは有利には複合ターゲットから堆積されることを特徴とする請求項1〜7のいずれか1項に記載の方法。
- 基材上に、先ず、物理気相蒸着(PVD)によりAlTiN基層が、有利には0.5〜10μm、特に有利には1〜5μm、特に有利には2μmの厚さで、堆積され、このAlTiN基層の上にCrTaN層とAlTiN層との交互堆積により多層被膜系が施されることを特徴とする請求項1〜8のいずれか1項に記載の方法。
- AlTiNの代わりにAlTiXNから成る基層が堆積され(ここで、X=Ta、V、Si、Mo又はHfである。)、AlTiXNは有利には複合ターゲットから堆積されることを特徴とする請求項9記載の方法。
- 物理気相蒸着(PVD)により多層被膜系の上に、TiN又はCrTaNから成る被覆層が、0.1〜10μm、有利には0.5〜5μm、特に有利には1μm、の厚さで施されることを特徴とする請求項1〜10のいずれか1項に記載の方法。
- 硬質材料層が請求項1〜11のいずれか1項に記載の方法により形成されることを特徴とする基材上の硬質材料層。
- 物理気相蒸着(PVD)によるCrTaN層とAlTiN層との交互堆積により基材上に多層被膜系が施されていることを特徴とする硬質金属から成る基材を有する切削工具。
- AlTiN基層が、前記基材とCrTaN/AlTiN多層被膜系との間に、有利には0.5〜10μm、特に有利には1〜5μm、特に有利には2μmの厚さで、設けられることを特徴とする請求項13に記載の切削工具。
- TiN又はCrTaNから成る少なくとも1つの被覆層が、有利には0.1〜10μm、有利には0.5〜5μm、特に有利には1μmの厚さで、前記CrTaN/AlTiN多層被膜系の上に施されることを特徴とする請求項13又は14に記載の切削工具。
- 請求項1〜11のいずれか1項に記載の方法において基材上にCrTaNを物理気相蒸着(PVD)するための、有利にはCrTaNを堆積するための、被膜源の製造方法であって、純Cr粉末と純Ta粉末とから成る粉末混合物が用意され、被膜源がこの粉末混合物の熱間高密度化により賦形される方法。
- 前記粉末混合物が1〜60原子%、有利には20〜30原子%、特に有利にはTa含有量が25原子%、のTa含有量を有することを特徴とする請求項16に記載の方法。
- Cr粉末及び/又はTa粉末の粒径が45μm以下であることを特徴とする請求項16又は17に記載の方法。
- 前記熱間高密度化がホットプレス、スパーク・プラズマ焼結(SPS)のような直接通電型プレス、熱間等方圧プレス(HIP)により実施されることを特徴とする請求項16〜18のいずれか1項に記載の方法。
- 前記加熱プレスが1,100〜1,750℃の温度範囲、有利には1,300〜1,500℃の温度範囲、で行なわれ、処理時間が有利には1時間内であることを特徴とする請求項16〜19のいずれか1項に記載の方法。
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US10484940B1 (en) * | 2019-05-21 | 2019-11-19 | Motorola Mobility Llc | Network association based on network performance capabilities |
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