JP2019508285A - 液滴堆積ヘッド - Google Patents
液滴堆積ヘッド Download PDFInfo
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- JP2019508285A JP2019508285A JP2018539061A JP2018539061A JP2019508285A JP 2019508285 A JP2019508285 A JP 2019508285A JP 2018539061 A JP2018539061 A JP 2018539061A JP 2018539061 A JP2018539061 A JP 2018539061A JP 2019508285 A JP2019508285 A JP 2019508285A
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- 230000008021 deposition Effects 0.000 title claims description 95
- 239000012530 fluid Substances 0.000 claims abstract description 97
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- 238000000151 deposition Methods 0.000 claims description 153
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- 239000011248 coating agent Substances 0.000 claims description 62
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- 229910010272 inorganic material Inorganic materials 0.000 claims description 14
- VRBFTYUMFJWSJY-UHFFFAOYSA-N 28804-46-8 Chemical compound ClC1CC(C=C2)=CC=C2C(Cl)CC2=CC=C1C=C2 VRBFTYUMFJWSJY-UHFFFAOYSA-N 0.000 claims description 12
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 12
- 238000002161 passivation Methods 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 3
- 241000588731 Hafnia Species 0.000 claims 2
- MXRIRQGCELJRSN-UHFFFAOYSA-N O.O.O.[Al] Chemical compound O.O.O.[Al] MXRIRQGCELJRSN-UHFFFAOYSA-N 0.000 claims 2
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- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 5
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
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- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 2
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- CYJRNFFLTBEQSQ-UHFFFAOYSA-N 8-(3-methyl-1-benzothiophen-5-yl)-N-(4-methylsulfonylpyridin-3-yl)quinoxalin-6-amine Chemical compound CS(=O)(=O)C1=C(C=NC=C1)NC=1C=C2N=CC=NC2=C(C=1)C=1C=CC2=C(C(=CS2)C)C=1 CYJRNFFLTBEQSQ-UHFFFAOYSA-N 0.000 description 1
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- QWNRYZWCIXWRAU-UHFFFAOYSA-N C(C)C[Hf](N)(CCC)(CCC)CCC Chemical compound C(C)C[Hf](N)(CCC)(CCC)CCC QWNRYZWCIXWRAU-UHFFFAOYSA-N 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
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- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
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- ZYLGGWPMIDHSEZ-UHFFFAOYSA-N dimethylazanide;hafnium(4+) Chemical compound [Hf+4].C[N-]C.C[N-]C.C[N-]C.C[N-]C ZYLGGWPMIDHSEZ-UHFFFAOYSA-N 0.000 description 1
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- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
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- B41J2/01—Ink jet
- B41J2/015—Ink jet characterised by the jet generation process
- B41J2/04—Ink jet characterised by the jet generation process generating single droplets or particles on demand
- B41J2/045—Ink jet characterised by the jet generation process generating single droplets or particles on demand by pressure, e.g. electromechanical transducers
- B41J2/04501—Control methods or devices therefor, e.g. driver circuits, control circuits
- B41J2/04505—Control methods or devices therefor, e.g. driver circuits, control circuits aiming at correcting alignment
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- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
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- B41J2/04—Ink jet characterised by the jet generation process generating single droplets or particles on demand
- B41J2/045—Ink jet characterised by the jet generation process generating single droplets or particles on demand by pressure, e.g. electromechanical transducers
- B41J2/04501—Control methods or devices therefor, e.g. driver circuits, control circuits
- B41J2/04573—Timing; Delays
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
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- B41J2/015—Ink jet characterised by the jet generation process
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- B41J2/04501—Control methods or devices therefor, e.g. driver circuits, control circuits
- B41J2/04581—Control methods or devices therefor, e.g. driver circuits, control circuits controlling heads based on piezoelectric elements
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- B—PERFORMING OPERATIONS; TRANSPORTING
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Abstract
Description
2つのHfO2層と2つのパリレンC層の積層体(図5bに類似)を、チタン酸ジルコン酸鉛基板上の無電解めっきによって堆積したニッケル電極上に調製した。
同じ原子層堆積システムを用いて110℃で原子層堆積によって類似のニッケル電極−チタン酸ジルコン酸鉛基板上に異なる厚さ(22nmおよび45nm)で形成された単一のHfO2層の破壊電圧を、前述の電気化学セル(3つのOリング)により調べた。
Claims (30)
- 液滴吐出ノズルおよび流体のリザーバに接続された流体チャンバと、その上に電極を有する流体チャンバ壁によって少なくとも部分的に形成される圧電アクチュエータ素子とを有する液滴堆積ヘッドであって、
前記圧電アクチュエータ素子は、チャンバ内に圧力を生成してチャンバからノズルを通って流体の液滴を吐出するために駆動電圧に応答して変位可能であり、
前記電極は、前記電極に最も近いまたは前記電極に接する無機絶縁層と、前記無機絶縁層の上に重なる有機絶縁層とを含む積層体を少なくとも部分的に含む不動態化コーティングを備え、
前記絶縁層中の欠陥は、前記絶縁層の間の界面で不整合になりがちであり、
前記無機絶縁層は500nm以下の厚さを有し、
前記有機絶縁層は3μm未満の厚さを有する、液滴堆積ヘッド。 - 前記無機絶縁層が100nm以下の厚さを有し、
前記有機絶縁層が1.5μm以下の厚さを有する、請求項1に記載の液滴堆積ヘッド。 - 前記積層体が、2つ以上の無機絶縁層と2つ以上の有機絶縁層とを含み、
少なくとも1つの有機絶縁層が2つの無機絶縁層の間に配置される、請求項1または2に記載の液滴堆積ヘッド。 - 前記積層体が、2つの無機絶縁層と2つの有機絶縁層とを含む、請求項3に記載の液滴堆積ヘッド。
- 前記積層体が、有機絶縁層である上部絶縁層を有する、請求項3または4に記載の液滴堆積ヘッド。
- 前記上部絶縁層が、その内部に開口部を含む、請求項5に記載の液滴堆積ヘッド。
- 前記不動態化コーティングが、無電解金属層を含む、請求項1〜6のいずれかに記載の液滴堆積ヘッド。
- 前記無電解金属層が、前記積層体の内部または上に配置される、請求項1〜7のいずれかに記載の液滴堆積ヘッド。
- 無機絶縁層が、二酸化ケイ素の比誘電率よりも大きい比誘電率を有する、請求項1〜8のいずれかに記載の液滴堆積ヘッド。
- 無機絶縁層が、非晶質ハフニアを含む、請求項1〜9のいずれかに記載の液滴堆積ヘッド。
- 前記有機絶縁層が、パリレンCを含む、請求項1〜10のいずれかに記載の液滴堆積ヘッド。
- 前記不動態化コーティングが、前記電極上に設けられたバッファ層またはシード層を含む、請求項1〜11のいずれかに記載の液滴堆積ヘッド。
- 前記バッファ層または前記シード層が、非晶質アルミナを含む、請求項12に記載の液滴堆積ヘッド。
- インクジェットプリントヘッドである、請求項1〜13のいずれかに記載の液滴堆積ヘッド。
- 液滴堆積ヘッドを製造するための方法であって、
前記液滴堆積ヘッドが、液滴吐出ノズルおよび流体のリザーバに接続された流体チャンバと、その上に電極を有する流体チャンバ壁によって少なくとも部分的に形成される圧電アクチュエータ素子とを備え、
前記圧電アクチュエータ素子は、流体チャンバ内に圧力を生成して流体チャンバからノズルを通って流体の液滴を吐出するために駆動電圧に応答して変位可能であり、
150℃以下の温度で第1の堆積技術を使用して電極上または電極の上に500nm未満の厚さの無機絶縁層を堆積させることによって前記電極上に不動態化コーティングを形成することと、150℃以下の温度で、前記第1の堆積技術とは異なる技術である第2の堆積技術を用いて前記無機絶縁層の上に3μm未満の厚さの有機絶縁層を堆積させることとを含む、方法。 - 前記無機絶縁層を堆積することが、110℃以下の温度で原子層堆積を用いることを含む、請求項15に記載の方法。
- 前記有機絶縁層を堆積することが、110℃以下の温度でのプラズマ強化化学蒸着を用いることを含む、請求項16に記載の方法。
- 前記有機絶縁層を堆積することが、1.0μmまたは1.2μmまたは1.5μmの厚さに堆積することを含む、請求項15〜17のいずれかに記載の方法。
- 前記不動態化コーティングを形成することが、2つの無機絶縁層の間に少なくとも1つの有機絶縁層が配置されるように、2つ以上の無機絶縁層および2つ以上の有機絶縁層を堆積することを含む、請求項15〜18のいずれかに記載の方法。
- 前記不動態化コーティングを形成することが、上部絶縁層として無機絶縁層を堆積することを含む、請求項19に記載の方法。
- 前記不動態化コーティングを形成することが、上部絶縁層として有機絶縁層を堆積することを含む、請求項19に記載の方法。
- 前記不動態化コーティングを形成することが、前記上部絶縁層上に無電解金属層を堆積することを含む、請求項15〜21のいずれかに記載の方法。
- 前記不動態化コーティングを形成することが、無機絶縁層上に無電解金属層を堆積することと、前記無電解金属層上に有機絶縁層を堆積することとを含む、請求項15〜22のいずれかに記載の方法。
- 前記無機絶縁層を堆積することが、二酸化ケイ素の比誘電率よりも大きい比誘電率を有する無機材料を堆積させることを含む、請求項15〜23のいずれかに記載の方法。
- 前記無機絶縁層を堆積することが、非晶質ハフニアを堆積することを含む、請求項24に記載の方法。
- 前記有機絶縁層を堆積することが、パリレンCを堆積することを含む、請求項15〜25のいずれかに記載の方法。
- 前記不動態化コーティングを形成することが、前記電極上にバッファ層またはシード層を堆積することを含む、請求項15〜26のいずれかに記載の方法。
- 前記バッファ層またはシード層を堆積することが、非晶質アルミナを堆積することを含む、請求項26に記載の方法。
- インクジェットプリントヘッドの製造方法である、請求項15〜28のいずれかに記載の方法。
- 請求項1〜14のいずれかに記載の液滴堆積ヘッドを含む、液滴堆積装置。
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