JP2019206729A - 半導体装置の製造装置および半導体装置の製造方法 - Google Patents
半導体装置の製造装置および半導体装置の製造方法 Download PDFInfo
- Publication number
- JP2019206729A JP2019206729A JP2018101202A JP2018101202A JP2019206729A JP 2019206729 A JP2019206729 A JP 2019206729A JP 2018101202 A JP2018101202 A JP 2018101202A JP 2018101202 A JP2018101202 A JP 2018101202A JP 2019206729 A JP2019206729 A JP 2019206729A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- supply pipe
- tank
- reserve tank
- ejection holes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 93
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 49
- 238000000034 method Methods 0.000 title claims abstract description 47
- 238000006243 chemical reaction Methods 0.000 claims abstract description 88
- 238000007747 plating Methods 0.000 claims abstract description 55
- 230000008569 process Effects 0.000 claims description 20
- 238000004140 cleaning Methods 0.000 claims description 10
- 238000007772 electroless plating Methods 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 239000007921 spray Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 44
- 238000010586 diagram Methods 0.000 description 19
- 229910000838 Al alloy Inorganic materials 0.000 description 14
- 230000004048 modification Effects 0.000 description 14
- 238000012986 modification Methods 0.000 description 14
- 239000011701 zinc Substances 0.000 description 9
- 239000007788 liquid Substances 0.000 description 8
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000013461 design Methods 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 238000004088 simulation Methods 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 238000001994 activation Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005238 degreasing Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 230000033116 oxidation-reduction process Effects 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 229910016570 AlCu Inorganic materials 0.000 description 1
- 229910005883 NiSi Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
- B05C11/10—Storage, supply or control of liquid or other fluent material; Recovery of excess liquid or other fluent material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C3/00—Apparatus in which the work is brought into contact with a bulk quantity of liquid or other fluent material
- B05C3/02—Apparatus in which the work is brought into contact with a bulk quantity of liquid or other fluent material the work being immersed in the liquid or other fluent material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1619—Apparatus for electroless plating
- C23C18/1628—Specific elements or parts of the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
- C23C18/1651—Two or more layers only obtained by electroless plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1655—Process features
- C23C18/1664—Process features with additional means during the plating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
- C23C18/1848—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by electrochemical pretreatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
- C23C18/1862—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by radiant energy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
- C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/42—Coating with noble metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/54—Contact plating, i.e. electroless electrochemical plating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/08—Electroplating with moving electrolyte e.g. jet electroplating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76874—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroless plating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrochemistry (AREA)
- Chemically Coating (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
本発明の実施の形態1について、図面を用いて以下に説明する。図1は、実施の形態1に係る半導体装置の製造装置の模式図であり、反応槽2の長辺と平行な方向で切断した断面図である。図2は、半導体装置の製造装置が備える供給管4の噴出孔4aの配置を示す模式図である。図3は、半導体装置の製造装置が備える別の供給管4の噴出孔4aの配置を示す模式図である。
次に、実施の形態1の変形例1について説明する。図9は、実施の形態1の変形例1に係る半導体装置の製造装置が備える複数の供給管4の模式図である。図10は、実施の形態1の変形例1に係る半導体装置の製造装置が備える別の複数の供給管4の模式図である。
次に、実施の形態2に係る半導体装置の製造装置について説明する。図13は、実施の形態2に係る半導体装置の製造装置である成膜装置1Bが備える複数の供給管4と外槽3との関係を示す模式図であり、供給管4と整流板7との間で水平方向に切断した断面図である。図14は、実施の形態2に係る成膜装置1Cが備える別の複数の供給管4と外槽3との関係を示す模式図であり、供給管4と整流板7との間で水平方向に切断した断面図である。なお、実施の形態2において、実施の形態1で説明したものと同一の構成要素については同一符号を付して説明は省略する。
Claims (11)
- 半導体ウエハを反応溶液に浸漬させて前記半導体ウエハにめっき膜を形成する反応槽と、
前記反応槽の内部に延設され、かつ、前記反応溶液を噴出する複数の噴出孔が延設方向に沿って設けられた供給管と、
前記反応槽に隣接して設けられ、かつ、前記反応槽からオーバーフローした前記反応溶液を溜めるリザーブ槽と、
を備え、
複数の前記噴出孔における前記リザーブ槽からの距離が遠い部分の開口率は、前記リザーブ槽からの距離が近い部分の開口率より少なくとも部分的に大きい、半導体装置の製造装置。 - 前記供給管は、前記リザーブ槽から遠ざかる方向に延設されている、請求項1記載の半導体装置の製造装置。
- 前記供給管が、前記供給管の延設方向と交差する方向に複数並べられた、請求項2記載の半導体装置の製造装置。
- 前記リザーブ槽とは別のリザーブ槽をさらに備え、
前記リザーブ槽は前記供給管の一端側に設けられ、
前記別のリザーブ槽は前記供給管の他端側に設けられ、
複数の前記噴出孔における前記別のリザーブ槽からの距離が遠い部分の開口率は、前記別のリザーブ槽からの距離が近い部分の開口率より少なくとも部分的に大きい、請求項2または請求項3記載の半導体装置の製造装置。 - 前記供給管が、前記リザーブ槽から遠ざかる方向、かつ、前記供給管の延設方向と交差する方向に複数並べられた、請求項1記載の半導体装置の製造装置。
- 複数の前記噴出孔の孔径は前記リザーブ槽からの距離が遠い部分で近い部分より少なくとも部分的に大きい、または、複数の前記噴出孔の密度は前記リザーブ槽からの距離が遠い部分で近い部分より少なくとも部分的に高い、請求項1から請求項5のいずれか1項に記載の半導体装置の製造装置。
- 前記反応槽は平面視にて矩形状であり、
前記リザーブ槽は、前記反応槽の前記矩形状の短辺に隣接して設けられ、
前記供給管は、前記反応槽の前記矩形状の長辺に対して平行な方向に延びる、請求項2記載の半導体装置の製造装置。 - 前記反応槽は平面視にて矩形状であり、
前記リザーブ槽は、前記反応槽の前記矩形状の長辺に隣接して設けられ、
複数の前記供給管は、前記反応槽の前記矩形状の長辺に対して平行な方向に延びる、請求項5記載の半導体装置の製造装置。 - (a)半導体ウエハの被めっき面を清浄化する工程と、
(b)請求項1から請求項8のいずれか1項に記載の半導体装置の製造装置にて前記半導体ウエハの前記被めっき面に前記反応溶液を供給し前記めっき膜を形成する工程と、
を備える、半導体装置の製造方法。 - 前記工程(a)はプラズマクリーニング処理を行う工程であり、
前記プラズマクリーニング処理で用いられるプラズマは酸素またはアルゴンである、請求項9記載の半導体装置の製造方法。 - 前記工程(b)は無電解めっき法を用いる工程である、請求項9記載の半導体装置の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018101202A JP6895927B2 (ja) | 2018-05-28 | 2018-05-28 | 半導体装置の製造装置および半導体装置の製造方法 |
US16/406,062 US11447871B2 (en) | 2018-05-28 | 2019-05-08 | Apparatus for manufacturing semiconductor device and method of manufacturing semiconductor device |
DE102019207313.1A DE102019207313A1 (de) | 2018-05-28 | 2019-05-20 | Apparat zur Herstellung einer Halbleitervorrichtung und Verfahren zur Herstellung einer Halbleitervorrichtung |
CN201910435905.4A CN110541161B (zh) | 2018-05-28 | 2019-05-23 | 半导体装置的制造装置及半导体装置的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018101202A JP6895927B2 (ja) | 2018-05-28 | 2018-05-28 | 半導体装置の製造装置および半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019206729A true JP2019206729A (ja) | 2019-12-05 |
JP6895927B2 JP6895927B2 (ja) | 2021-06-30 |
Family
ID=68499637
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018101202A Active JP6895927B2 (ja) | 2018-05-28 | 2018-05-28 | 半導体装置の製造装置および半導体装置の製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US11447871B2 (ja) |
JP (1) | JP6895927B2 (ja) |
CN (1) | CN110541161B (ja) |
DE (1) | DE102019207313A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022138528A1 (ja) * | 2020-12-25 | 2022-06-30 | アスカコーポレーション株式会社 | 無電解めっき装置 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN117038514B (zh) * | 2023-08-11 | 2024-04-30 | 无锡亚电智能装备有限公司 | 一种具有整流板的刻蚀清洗槽 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06179976A (ja) * | 1992-12-11 | 1994-06-28 | Ibiden Co Ltd | 化学メッキ槽 |
JPH08120462A (ja) * | 1994-10-18 | 1996-05-14 | Nec Corp | 薬液を用いたウエハ表面処理装置 |
JPH08335335A (ja) * | 1995-06-07 | 1996-12-17 | Ricoh Co Ltd | 光ディスク用スタンパの電鋳装置 |
JP2002093837A (ja) * | 2000-09-13 | 2002-03-29 | Seiko Epson Corp | 半導体装置の製造方法 |
WO2008072403A1 (ja) * | 2006-12-14 | 2008-06-19 | Nichiyo Engineering Corporation | 非接触液シール装置及び方法 |
JP2009057593A (ja) * | 2007-08-31 | 2009-03-19 | Ebara Corp | 基板処理装置 |
JP2011042832A (ja) * | 2009-08-20 | 2011-03-03 | Denso Corp | 無電解めっき処理方法 |
JP2014234539A (ja) * | 2013-06-03 | 2014-12-15 | 富士フイルム株式会社 | 成膜装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4183799A (en) * | 1978-08-31 | 1980-01-15 | Production Machinery Corporation | Apparatus for plating a layer onto a metal strip |
JPS63274794A (ja) * | 1987-05-01 | 1988-11-11 | Oki Electric Ind Co Ltd | 誘電体コアの電解メツキ方法 |
JPH02222194A (ja) * | 1989-02-22 | 1990-09-04 | Fujitsu Ltd | プリント基板の処理方法 |
EP0460645B1 (en) | 1990-06-06 | 1995-03-01 | C. Uyemura & Co, Ltd | Composite plating apparatus |
US5421987A (en) * | 1993-08-30 | 1995-06-06 | Tzanavaras; George | Precision high rate electroplating cell and method |
KR100195334B1 (ko) * | 1996-08-16 | 1999-06-15 | 구본준 | 세정장치 |
US6086731A (en) * | 1996-10-24 | 2000-07-11 | Honda Giken Kogyo Kabushiki Kaisha | Composite plating apparatus |
JP3960457B2 (ja) * | 1999-10-27 | 2007-08-15 | 東邦化成株式会社 | 基板処理装置 |
US20040084318A1 (en) * | 2002-11-05 | 2004-05-06 | Uri Cohen | Methods and apparatus for activating openings and for jets plating |
JP2004193329A (ja) * | 2002-12-11 | 2004-07-08 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
KR101058917B1 (ko) * | 2003-03-11 | 2011-08-23 | 가부시키가이샤 에바라 세이사꾸쇼 | 전기 도금 장치 |
-
2018
- 2018-05-28 JP JP2018101202A patent/JP6895927B2/ja active Active
-
2019
- 2019-05-08 US US16/406,062 patent/US11447871B2/en active Active
- 2019-05-20 DE DE102019207313.1A patent/DE102019207313A1/de active Pending
- 2019-05-23 CN CN201910435905.4A patent/CN110541161B/zh active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06179976A (ja) * | 1992-12-11 | 1994-06-28 | Ibiden Co Ltd | 化学メッキ槽 |
JPH08120462A (ja) * | 1994-10-18 | 1996-05-14 | Nec Corp | 薬液を用いたウエハ表面処理装置 |
JPH08335335A (ja) * | 1995-06-07 | 1996-12-17 | Ricoh Co Ltd | 光ディスク用スタンパの電鋳装置 |
JP2002093837A (ja) * | 2000-09-13 | 2002-03-29 | Seiko Epson Corp | 半導体装置の製造方法 |
WO2008072403A1 (ja) * | 2006-12-14 | 2008-06-19 | Nichiyo Engineering Corporation | 非接触液シール装置及び方法 |
JP2009057593A (ja) * | 2007-08-31 | 2009-03-19 | Ebara Corp | 基板処理装置 |
JP2011042832A (ja) * | 2009-08-20 | 2011-03-03 | Denso Corp | 無電解めっき処理方法 |
JP2014234539A (ja) * | 2013-06-03 | 2014-12-15 | 富士フイルム株式会社 | 成膜装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022138528A1 (ja) * | 2020-12-25 | 2022-06-30 | アスカコーポレーション株式会社 | 無電解めっき装置 |
JP2022102091A (ja) * | 2020-12-25 | 2022-07-07 | アスカコーポレーション株式会社 | 無電解めっき装置 |
JP7111386B2 (ja) | 2020-12-25 | 2022-08-02 | アスカコーポレーション株式会社 | 無電解めっき装置 |
Also Published As
Publication number | Publication date |
---|---|
US20190360105A1 (en) | 2019-11-28 |
CN110541161A (zh) | 2019-12-06 |
JP6895927B2 (ja) | 2021-06-30 |
US11447871B2 (en) | 2022-09-20 |
CN110541161B (zh) | 2021-11-05 |
DE102019207313A1 (de) | 2019-11-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5669780B2 (ja) | 半導体装置の製造方法 | |
US6197181B1 (en) | Apparatus and method for electrolytically depositing a metal on a microelectronic workpiece | |
JP4642229B2 (ja) | 半導体作業部材の上に銅を電解により沈着させる装置および方法 | |
US20070202686A1 (en) | Method of electro-depositing a conductive material in at least one through-hole via of a semiconductor substrate | |
CN110249074B (zh) | 半导体元件及其制造方法 | |
US9627335B2 (en) | Method for processing a semiconductor workpiece and semiconductor workpiece | |
KR20150138826A (ko) | 저항성 기판들 상에서의 최적화된 전기 도금 성능을 위한 웨이퍼 에지의 금속화 | |
JP6895927B2 (ja) | 半導体装置の製造装置および半導体装置の製造方法 | |
TW200903702A (en) | Substrate placing table, substrate processing apparatus and method for machining surface of substrate placing table | |
KR20160132775A (ko) | 도금 처리 방법 및 기억 매체 | |
JP2005097732A (ja) | めっき装置 | |
US20060199381A1 (en) | Electro-chemical deposition apparatus and method of preventing cavities in an ecd copper film | |
US20060292867A1 (en) | Method of forming metal line in semiconductor device | |
US10672635B2 (en) | Semiconductor-manufacturing apparatus and method for manufacturing semiconductor device | |
JP2003129283A (ja) | メッキ処理装置及びそれを用いた半導体装置の製造方法 | |
JP5232844B2 (ja) | めっき装置 | |
KR20100009752A (ko) | 자기장을 이용한 무전해 도금 장치 및 방법 | |
JP5449920B2 (ja) | 無電解めっき処理方法 | |
JP7170849B2 (ja) | 半導体装置及びその製造方法 | |
JP2006225715A (ja) | めっき装置及びめっき方法 | |
JP2017057486A (ja) | めっき付パワーモジュール用基板の製造方法 | |
JP2010103406A (ja) | 貫通電極基板の製造方法 | |
JP2000017480A (ja) | めっき方法 | |
US10937657B2 (en) | Semiconductor device including a reactant metal layer disposed between an aluminum alloy film and a catalyst metal film and method for manufacturing thereof | |
JP4757372B2 (ja) | 埋込配線層の形成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200706 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20210426 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210511 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210608 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6895927 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |