JP2019153537A5 - - Google Patents

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Publication number
JP2019153537A5
JP2019153537A5 JP2018039636A JP2018039636A JP2019153537A5 JP 2019153537 A5 JP2019153537 A5 JP 2019153537A5 JP 2018039636 A JP2018039636 A JP 2018039636A JP 2018039636 A JP2018039636 A JP 2018039636A JP 2019153537 A5 JP2019153537 A5 JP 2019153537A5
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JP
Japan
Prior art keywords
detector
poles
intensity
electron beam
reflected electrons
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JP2018039636A
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English (en)
Japanese (ja)
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JP7017437B2 (ja
JP2019153537A (ja
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Priority claimed from JP2018039636A external-priority patent/JP7017437B2/ja
Priority to JP2018039636A priority Critical patent/JP7017437B2/ja
Priority to PCT/JP2019/008066 priority patent/WO2019172115A1/ja
Priority to US16/977,808 priority patent/US11322332B2/en
Priority to KR1020207027569A priority patent/KR102764341B1/ko
Priority to CN201980016742.4A priority patent/CN111801764B/zh
Priority to TW108107245A priority patent/TWI784138B/zh
Publication of JP2019153537A publication Critical patent/JP2019153537A/ja
Publication of JP2019153537A5 publication Critical patent/JP2019153537A5/ja
Publication of JP7017437B2 publication Critical patent/JP7017437B2/ja
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JP2018039636A 2018-03-06 2018-03-06 反射電子のエネルギースペクトルを測定する装置および方法 Active JP7017437B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2018039636A JP7017437B2 (ja) 2018-03-06 2018-03-06 反射電子のエネルギースペクトルを測定する装置および方法
CN201980016742.4A CN111801764B (zh) 2018-03-06 2019-03-01 测定背散射电子能谱的装置及方法
US16/977,808 US11322332B2 (en) 2018-03-06 2019-03-01 Apparatus and method for measuring energy spectrum of backscattered electrons
KR1020207027569A KR102764341B1 (ko) 2018-03-06 2019-03-01 반사 전자의 에너지 스펙트럼을 측정하는 장치 및 방법
PCT/JP2019/008066 WO2019172115A1 (ja) 2018-03-06 2019-03-01 反射電子のエネルギースペクトルを測定する装置および方法
TW108107245A TWI784138B (zh) 2018-03-06 2019-03-05 測量反射電子的能量頻譜的裝置及方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018039636A JP7017437B2 (ja) 2018-03-06 2018-03-06 反射電子のエネルギースペクトルを測定する装置および方法

Publications (3)

Publication Number Publication Date
JP2019153537A JP2019153537A (ja) 2019-09-12
JP2019153537A5 true JP2019153537A5 (enExample) 2021-04-01
JP7017437B2 JP7017437B2 (ja) 2022-02-08

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JP2018039636A Active JP7017437B2 (ja) 2018-03-06 2018-03-06 反射電子のエネルギースペクトルを測定する装置および方法

Country Status (6)

Country Link
US (1) US11322332B2 (enExample)
JP (1) JP7017437B2 (enExample)
KR (1) KR102764341B1 (enExample)
CN (1) CN111801764B (enExample)
TW (1) TWI784138B (enExample)
WO (1) WO2019172115A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112071731B (zh) * 2020-07-23 2021-11-19 西安交通大学 一种基于维恩分析器校正二阶像差的设计方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4216730C2 (de) 1992-05-20 2003-07-24 Advantest Corp Rasterelektronenstrahlgerät
DE69920182T2 (de) 1998-12-17 2005-02-17 Fei Co., Hillsboro Korpuskularstrahloptisches gerät mit auger-elektronendetektion
KR101110224B1 (ko) * 2003-01-27 2012-02-15 가부시끼가이샤 도시바 샘플에서 반사된 전자들을 이용하여 샘플을 검사하는 맵핑 투영식 전자빔 장치
JP4256300B2 (ja) * 2004-05-28 2009-04-22 株式会社東芝 基板検査方法および基板検査装置
JP2006114225A (ja) 2004-10-12 2006-04-27 Hitachi High-Technologies Corp 荷電粒子線装置
KR101127813B1 (ko) 2004-12-29 2012-03-26 엘지디스플레이 주식회사 쉬프트 레지스터와 이를 이용한 액정 표시장치
US7205542B1 (en) * 2005-11-14 2007-04-17 Kla-Tencor Technologies Corporation Scanning electron microscope with curved axes
US7818073B2 (en) * 2006-04-20 2010-10-19 Asml Netherlands B.V. Method for obtaining improved feedforward data, a lithographic apparatus for carrying out the method and a device manufacturing method
US7755043B1 (en) * 2007-03-21 2010-07-13 Kla-Tencor Technologies Corporation Bright-field/dark-field detector with integrated electron energy spectrometer
DE102008041815A1 (de) * 2008-09-04 2010-04-15 Carl Zeiss Nts Gmbh Verfahren zur Analyse einer Probe
JP5771628B2 (ja) * 2010-12-16 2015-09-02 株式会社日立ハイテクノロジーズ 走査電子顕微鏡及びそれを用いた測長方法
CN103890895B (zh) * 2011-09-27 2016-05-18 Snu精度株式会社 具备反射电子检测功能的扫描电子显微镜
US9053900B2 (en) * 2012-04-03 2015-06-09 Kla-Tencor Corporation Apparatus and methods for high-resolution electron beam imaging
EP2824445B1 (en) * 2013-07-08 2016-03-02 Fei Company Charged-particle microscopy combined with raman spectroscopy
US10103002B1 (en) * 2016-05-20 2018-10-16 Carl Zeiss Microscopy Gmbh Method for generating an image of an object and particle beam device for carrying out the method
US20180005797A1 (en) * 2016-06-29 2018-01-04 Ngr Inc. Scanning electron microscope
JP6932565B2 (ja) * 2017-06-23 2021-09-08 Tasmit株式会社 パターン欠陥検出方法
JP7107653B2 (ja) * 2017-08-31 2022-07-27 東レエンジニアリング先端半導体Miテクノロジー株式会社 画像生成方法

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