KR102764341B1 - 반사 전자의 에너지 스펙트럼을 측정하는 장치 및 방법 - Google Patents
반사 전자의 에너지 스펙트럼을 측정하는 장치 및 방법 Download PDFInfo
- Publication number
- KR102764341B1 KR102764341B1 KR1020207027569A KR20207027569A KR102764341B1 KR 102764341 B1 KR102764341 B1 KR 102764341B1 KR 1020207027569 A KR1020207027569 A KR 1020207027569A KR 20207027569 A KR20207027569 A KR 20207027569A KR 102764341 B1 KR102764341 B1 KR 102764341B1
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- reflected electrons
- energy
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- 238000001228 spectrum Methods 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000001514 detection method Methods 0.000 claims abstract description 54
- 238000010894 electron beam technology Methods 0.000 claims abstract description 54
- 230000008859 change Effects 0.000 claims abstract description 16
- 201000009310 astigmatism Diseases 0.000 claims description 23
- 230000003287 optical effect Effects 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 4
- 230000000694 effects Effects 0.000 description 12
- 230000005684 electric field Effects 0.000 description 11
- 238000004088 simulation Methods 0.000 description 8
- 238000010408 sweeping Methods 0.000 description 7
- 238000012937 correction Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000006185 dispersion Substances 0.000 description 4
- 230000005672 electromagnetic field Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 230000005405 multipole Effects 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 230000004075 alteration Effects 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 229910000889 permalloy Inorganic materials 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 238000012545 processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/29—Reflection microscopes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/049—Focusing means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/05—Arrangements for energy or mass analysis
- H01J2237/057—Energy or mass filtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/15—Means for deflecting or directing discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/153—Correcting image defects, e.g. stigmators
- H01J2237/1532—Astigmatism
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/2446—Position sensitive detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/24475—Scattered electron detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/24485—Energy spectrometers
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Electron Tubes For Measurement (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2018-039636 | 2018-03-06 | ||
| JP2018039636A JP7017437B2 (ja) | 2018-03-06 | 2018-03-06 | 反射電子のエネルギースペクトルを測定する装置および方法 |
| PCT/JP2019/008066 WO2019172115A1 (ja) | 2018-03-06 | 2019-03-01 | 反射電子のエネルギースペクトルを測定する装置および方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20200127208A KR20200127208A (ko) | 2020-11-10 |
| KR102764341B1 true KR102764341B1 (ko) | 2025-02-07 |
Family
ID=67846272
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020207027569A Active KR102764341B1 (ko) | 2018-03-06 | 2019-03-01 | 반사 전자의 에너지 스펙트럼을 측정하는 장치 및 방법 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US11322332B2 (enExample) |
| JP (1) | JP7017437B2 (enExample) |
| KR (1) | KR102764341B1 (enExample) |
| CN (1) | CN111801764B (enExample) |
| TW (1) | TWI784138B (enExample) |
| WO (1) | WO2019172115A1 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112071731B (zh) * | 2020-07-23 | 2021-11-19 | 西安交通大学 | 一种基于维恩分析器校正二阶像差的设计方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005337959A (ja) | 2004-05-28 | 2005-12-08 | Toshiba Corp | 基板検査方法および基板検査装置 |
| US20130292568A1 (en) | 2010-12-16 | 2013-11-07 | Daisuke Bizen | Scanning electron microscope and length measuring method using the same |
| JP2018006339A (ja) * | 2016-06-29 | 2018-01-11 | 株式会社 Ngr | 走査電子顕微鏡 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4216730C2 (de) | 1992-05-20 | 2003-07-24 | Advantest Corp | Rasterelektronenstrahlgerät |
| DE69920182T2 (de) | 1998-12-17 | 2005-02-17 | Fei Co., Hillsboro | Korpuskularstrahloptisches gerät mit auger-elektronendetektion |
| KR101110224B1 (ko) * | 2003-01-27 | 2012-02-15 | 가부시끼가이샤 도시바 | 샘플에서 반사된 전자들을 이용하여 샘플을 검사하는 맵핑 투영식 전자빔 장치 |
| JP2006114225A (ja) | 2004-10-12 | 2006-04-27 | Hitachi High-Technologies Corp | 荷電粒子線装置 |
| KR101127813B1 (ko) | 2004-12-29 | 2012-03-26 | 엘지디스플레이 주식회사 | 쉬프트 레지스터와 이를 이용한 액정 표시장치 |
| US7205542B1 (en) * | 2005-11-14 | 2007-04-17 | Kla-Tencor Technologies Corporation | Scanning electron microscope with curved axes |
| US7818073B2 (en) * | 2006-04-20 | 2010-10-19 | Asml Netherlands B.V. | Method for obtaining improved feedforward data, a lithographic apparatus for carrying out the method and a device manufacturing method |
| US7755043B1 (en) * | 2007-03-21 | 2010-07-13 | Kla-Tencor Technologies Corporation | Bright-field/dark-field detector with integrated electron energy spectrometer |
| DE102008041815A1 (de) * | 2008-09-04 | 2010-04-15 | Carl Zeiss Nts Gmbh | Verfahren zur Analyse einer Probe |
| CN103890895B (zh) * | 2011-09-27 | 2016-05-18 | Snu精度株式会社 | 具备反射电子检测功能的扫描电子显微镜 |
| US9053900B2 (en) * | 2012-04-03 | 2015-06-09 | Kla-Tencor Corporation | Apparatus and methods for high-resolution electron beam imaging |
| EP2824445B1 (en) * | 2013-07-08 | 2016-03-02 | Fei Company | Charged-particle microscopy combined with raman spectroscopy |
| US10103002B1 (en) * | 2016-05-20 | 2018-10-16 | Carl Zeiss Microscopy Gmbh | Method for generating an image of an object and particle beam device for carrying out the method |
| JP6932565B2 (ja) * | 2017-06-23 | 2021-09-08 | Tasmit株式会社 | パターン欠陥検出方法 |
| JP7107653B2 (ja) * | 2017-08-31 | 2022-07-27 | 東レエンジニアリング先端半導体Miテクノロジー株式会社 | 画像生成方法 |
-
2018
- 2018-03-06 JP JP2018039636A patent/JP7017437B2/ja active Active
-
2019
- 2019-03-01 KR KR1020207027569A patent/KR102764341B1/ko active Active
- 2019-03-01 WO PCT/JP2019/008066 patent/WO2019172115A1/ja not_active Ceased
- 2019-03-01 CN CN201980016742.4A patent/CN111801764B/zh active Active
- 2019-03-01 US US16/977,808 patent/US11322332B2/en active Active
- 2019-03-05 TW TW108107245A patent/TWI784138B/zh active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005337959A (ja) | 2004-05-28 | 2005-12-08 | Toshiba Corp | 基板検査方法および基板検査装置 |
| US20130292568A1 (en) | 2010-12-16 | 2013-11-07 | Daisuke Bizen | Scanning electron microscope and length measuring method using the same |
| JP2018006339A (ja) * | 2016-06-29 | 2018-01-11 | 株式会社 Ngr | 走査電子顕微鏡 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7017437B2 (ja) | 2022-02-08 |
| KR20200127208A (ko) | 2020-11-10 |
| TWI784138B (zh) | 2022-11-21 |
| US20210012999A1 (en) | 2021-01-14 |
| WO2019172115A1 (ja) | 2019-09-12 |
| US11322332B2 (en) | 2022-05-03 |
| TW201941247A (zh) | 2019-10-16 |
| CN111801764B (zh) | 2024-11-26 |
| CN111801764A (zh) | 2020-10-20 |
| JP2019153537A (ja) | 2019-09-12 |
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Legal Events
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| PA0105 | International application |
Patent event date: 20200924 Patent event code: PA01051R01D Comment text: International Patent Application |
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| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20220128 Comment text: Request for Examination of Application |
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Comment text: Notification of reason for refusal Patent event date: 20240322 Patent event code: PE09021S01D |
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| PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20241126 |
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| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 20250203 Patent event code: PR07011E01D |
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| PR1002 | Payment of registration fee |
Payment date: 20250204 End annual number: 3 Start annual number: 1 |
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| PG1601 | Publication of registration |