KR102764341B1 - 반사 전자의 에너지 스펙트럼을 측정하는 장치 및 방법 - Google Patents

반사 전자의 에너지 스펙트럼을 측정하는 장치 및 방법 Download PDF

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KR102764341B1
KR102764341B1 KR1020207027569A KR20207027569A KR102764341B1 KR 102764341 B1 KR102764341 B1 KR 102764341B1 KR 1020207027569 A KR1020207027569 A KR 1020207027569A KR 20207027569 A KR20207027569 A KR 20207027569A KR 102764341 B1 KR102764341 B1 KR 102764341B1
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reflected electrons
energy
detector
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poles
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KR20200127208A (ko
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마코토 가토
스미오 사사키
유키히로 다나카
유이치로 야마자키
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타스밋 가부시키가이샤
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/05Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/244Detectors; Associated components or circuits therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/29Reflection microscopes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04Means for controlling the discharge
    • H01J2237/049Focusing means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/05Arrangements for energy or mass analysis
    • H01J2237/057Energy or mass filtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15Means for deflecting or directing discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153Correcting image defects, e.g. stigmators
    • H01J2237/1532Astigmatism
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244Detection characterized by the detecting means
    • H01J2237/2446Position sensitive detectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244Detection characterized by the detecting means
    • H01J2237/24475Scattered electron detectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244Detection characterized by the detecting means
    • H01J2237/24485Energy spectrometers

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Electron Tubes For Measurement (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
KR1020207027569A 2018-03-06 2019-03-01 반사 전자의 에너지 스펙트럼을 측정하는 장치 및 방법 Active KR102764341B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2018-039636 2018-03-06
JP2018039636A JP7017437B2 (ja) 2018-03-06 2018-03-06 反射電子のエネルギースペクトルを測定する装置および方法
PCT/JP2019/008066 WO2019172115A1 (ja) 2018-03-06 2019-03-01 反射電子のエネルギースペクトルを測定する装置および方法

Publications (2)

Publication Number Publication Date
KR20200127208A KR20200127208A (ko) 2020-11-10
KR102764341B1 true KR102764341B1 (ko) 2025-02-07

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KR1020207027569A Active KR102764341B1 (ko) 2018-03-06 2019-03-01 반사 전자의 에너지 스펙트럼을 측정하는 장치 및 방법

Country Status (6)

Country Link
US (1) US11322332B2 (enExample)
JP (1) JP7017437B2 (enExample)
KR (1) KR102764341B1 (enExample)
CN (1) CN111801764B (enExample)
TW (1) TWI784138B (enExample)
WO (1) WO2019172115A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112071731B (zh) * 2020-07-23 2021-11-19 西安交通大学 一种基于维恩分析器校正二阶像差的设计方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005337959A (ja) 2004-05-28 2005-12-08 Toshiba Corp 基板検査方法および基板検査装置
US20130292568A1 (en) 2010-12-16 2013-11-07 Daisuke Bizen Scanning electron microscope and length measuring method using the same
JP2018006339A (ja) * 2016-06-29 2018-01-11 株式会社 Ngr 走査電子顕微鏡

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DE4216730C2 (de) 1992-05-20 2003-07-24 Advantest Corp Rasterelektronenstrahlgerät
DE69920182T2 (de) 1998-12-17 2005-02-17 Fei Co., Hillsboro Korpuskularstrahloptisches gerät mit auger-elektronendetektion
KR101110224B1 (ko) * 2003-01-27 2012-02-15 가부시끼가이샤 도시바 샘플에서 반사된 전자들을 이용하여 샘플을 검사하는 맵핑 투영식 전자빔 장치
JP2006114225A (ja) 2004-10-12 2006-04-27 Hitachi High-Technologies Corp 荷電粒子線装置
KR101127813B1 (ko) 2004-12-29 2012-03-26 엘지디스플레이 주식회사 쉬프트 레지스터와 이를 이용한 액정 표시장치
US7205542B1 (en) * 2005-11-14 2007-04-17 Kla-Tencor Technologies Corporation Scanning electron microscope with curved axes
US7818073B2 (en) * 2006-04-20 2010-10-19 Asml Netherlands B.V. Method for obtaining improved feedforward data, a lithographic apparatus for carrying out the method and a device manufacturing method
US7755043B1 (en) * 2007-03-21 2010-07-13 Kla-Tencor Technologies Corporation Bright-field/dark-field detector with integrated electron energy spectrometer
DE102008041815A1 (de) * 2008-09-04 2010-04-15 Carl Zeiss Nts Gmbh Verfahren zur Analyse einer Probe
CN103890895B (zh) * 2011-09-27 2016-05-18 Snu精度株式会社 具备反射电子检测功能的扫描电子显微镜
US9053900B2 (en) * 2012-04-03 2015-06-09 Kla-Tencor Corporation Apparatus and methods for high-resolution electron beam imaging
EP2824445B1 (en) * 2013-07-08 2016-03-02 Fei Company Charged-particle microscopy combined with raman spectroscopy
US10103002B1 (en) * 2016-05-20 2018-10-16 Carl Zeiss Microscopy Gmbh Method for generating an image of an object and particle beam device for carrying out the method
JP6932565B2 (ja) * 2017-06-23 2021-09-08 Tasmit株式会社 パターン欠陥検出方法
JP7107653B2 (ja) * 2017-08-31 2022-07-27 東レエンジニアリング先端半導体Miテクノロジー株式会社 画像生成方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005337959A (ja) 2004-05-28 2005-12-08 Toshiba Corp 基板検査方法および基板検査装置
US20130292568A1 (en) 2010-12-16 2013-11-07 Daisuke Bizen Scanning electron microscope and length measuring method using the same
JP2018006339A (ja) * 2016-06-29 2018-01-11 株式会社 Ngr 走査電子顕微鏡

Also Published As

Publication number Publication date
JP7017437B2 (ja) 2022-02-08
KR20200127208A (ko) 2020-11-10
TWI784138B (zh) 2022-11-21
US20210012999A1 (en) 2021-01-14
WO2019172115A1 (ja) 2019-09-12
US11322332B2 (en) 2022-05-03
TW201941247A (zh) 2019-10-16
CN111801764B (zh) 2024-11-26
CN111801764A (zh) 2020-10-20
JP2019153537A (ja) 2019-09-12

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