TWI784138B - 測量反射電子的能量頻譜的裝置及方法 - Google Patents

測量反射電子的能量頻譜的裝置及方法 Download PDF

Info

Publication number
TWI784138B
TWI784138B TW108107245A TW108107245A TWI784138B TW I784138 B TWI784138 B TW I784138B TW 108107245 A TW108107245 A TW 108107245A TW 108107245 A TW108107245 A TW 108107245A TW I784138 B TWI784138 B TW I784138B
Authority
TW
Taiwan
Prior art keywords
aforementioned
reflected electrons
wien filter
energy
detector
Prior art date
Application number
TW108107245A
Other languages
English (en)
Chinese (zh)
Other versions
TW201941247A (zh
Inventor
嘉藤誠
佐佐木澄夫
田中幸浩
山崎裕一郎
Original Assignee
日商東實先進股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東實先進股份有限公司 filed Critical 日商東實先進股份有限公司
Publication of TW201941247A publication Critical patent/TW201941247A/zh
Application granted granted Critical
Publication of TWI784138B publication Critical patent/TWI784138B/zh

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/05Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/244Detectors; Associated components or circuits therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/29Reflection microscopes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04Means for controlling the discharge
    • H01J2237/049Focusing means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/05Arrangements for energy or mass analysis
    • H01J2237/057Energy or mass filtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15Means for deflecting or directing discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153Correcting image defects, e.g. stigmators
    • H01J2237/1532Astigmatism
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244Detection characterized by the detecting means
    • H01J2237/2446Position sensitive detectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244Detection characterized by the detecting means
    • H01J2237/24475Scattered electron detectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244Detection characterized by the detecting means
    • H01J2237/24485Energy spectrometers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Electron Tubes For Measurement (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
TW108107245A 2018-03-06 2019-03-05 測量反射電子的能量頻譜的裝置及方法 TWI784138B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018039636A JP7017437B2 (ja) 2018-03-06 2018-03-06 反射電子のエネルギースペクトルを測定する装置および方法
JP2018-039636 2018-03-06

Publications (2)

Publication Number Publication Date
TW201941247A TW201941247A (zh) 2019-10-16
TWI784138B true TWI784138B (zh) 2022-11-21

Family

ID=67846272

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108107245A TWI784138B (zh) 2018-03-06 2019-03-05 測量反射電子的能量頻譜的裝置及方法

Country Status (6)

Country Link
US (1) US11322332B2 (enExample)
JP (1) JP7017437B2 (enExample)
KR (1) KR102764341B1 (enExample)
CN (1) CN111801764B (enExample)
TW (1) TWI784138B (enExample)
WO (1) WO2019172115A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112071731B (zh) * 2020-07-23 2021-11-19 西安交通大学 一种基于维恩分析器校正二阶像差的设计方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200745779A (en) * 2006-04-20 2007-12-16 Asml Netherlands Bv A method for obtaining improved feedforward data, a lithographic apparatus for carrying out the method and a device manufacturing method
US7755043B1 (en) * 2007-03-21 2010-07-13 Kla-Tencor Technologies Corporation Bright-field/dark-field detector with integrated electron energy spectrometer
CN104280377A (zh) * 2013-07-08 2015-01-14 Fei公司 具有拉曼光谱能力的带电粒子显微镜
JP2018006339A (ja) * 2016-06-29 2018-01-11 株式会社 Ngr 走査電子顕微鏡

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4216730C2 (de) 1992-05-20 2003-07-24 Advantest Corp Rasterelektronenstrahlgerät
DE69920182T2 (de) 1998-12-17 2005-02-17 Fei Co., Hillsboro Korpuskularstrahloptisches gerät mit auger-elektronendetektion
KR101110224B1 (ko) * 2003-01-27 2012-02-15 가부시끼가이샤 도시바 샘플에서 반사된 전자들을 이용하여 샘플을 검사하는 맵핑 투영식 전자빔 장치
JP4256300B2 (ja) * 2004-05-28 2009-04-22 株式会社東芝 基板検査方法および基板検査装置
JP2006114225A (ja) 2004-10-12 2006-04-27 Hitachi High-Technologies Corp 荷電粒子線装置
KR101127813B1 (ko) 2004-12-29 2012-03-26 엘지디스플레이 주식회사 쉬프트 레지스터와 이를 이용한 액정 표시장치
US7205542B1 (en) * 2005-11-14 2007-04-17 Kla-Tencor Technologies Corporation Scanning electron microscope with curved axes
DE102008041815A1 (de) * 2008-09-04 2010-04-15 Carl Zeiss Nts Gmbh Verfahren zur Analyse einer Probe
JP5771628B2 (ja) * 2010-12-16 2015-09-02 株式会社日立ハイテクノロジーズ 走査電子顕微鏡及びそれを用いた測長方法
CN103890895B (zh) * 2011-09-27 2016-05-18 Snu精度株式会社 具备反射电子检测功能的扫描电子显微镜
US9053900B2 (en) * 2012-04-03 2015-06-09 Kla-Tencor Corporation Apparatus and methods for high-resolution electron beam imaging
US10103002B1 (en) * 2016-05-20 2018-10-16 Carl Zeiss Microscopy Gmbh Method for generating an image of an object and particle beam device for carrying out the method
JP6932565B2 (ja) * 2017-06-23 2021-09-08 Tasmit株式会社 パターン欠陥検出方法
JP7107653B2 (ja) * 2017-08-31 2022-07-27 東レエンジニアリング先端半導体Miテクノロジー株式会社 画像生成方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200745779A (en) * 2006-04-20 2007-12-16 Asml Netherlands Bv A method for obtaining improved feedforward data, a lithographic apparatus for carrying out the method and a device manufacturing method
US7755043B1 (en) * 2007-03-21 2010-07-13 Kla-Tencor Technologies Corporation Bright-field/dark-field detector with integrated electron energy spectrometer
CN104280377A (zh) * 2013-07-08 2015-01-14 Fei公司 具有拉曼光谱能力的带电粒子显微镜
JP2018006339A (ja) * 2016-06-29 2018-01-11 株式会社 Ngr 走査電子顕微鏡

Also Published As

Publication number Publication date
JP7017437B2 (ja) 2022-02-08
KR20200127208A (ko) 2020-11-10
US20210012999A1 (en) 2021-01-14
KR102764341B1 (ko) 2025-02-07
WO2019172115A1 (ja) 2019-09-12
US11322332B2 (en) 2022-05-03
TW201941247A (zh) 2019-10-16
CN111801764B (zh) 2024-11-26
CN111801764A (zh) 2020-10-20
JP2019153537A (ja) 2019-09-12

Similar Documents

Publication Publication Date Title
US11562880B2 (en) Particle beam system for adjusting the current of individual particle beams
JP6934980B2 (ja) 走査型電子顕微鏡装置
TWI704590B (zh) 用於操作多射束粒子顯微鏡之方法
US9093246B2 (en) SACP method and particle optical system for performing the method
JP2018006339A (ja) 走査電子顕微鏡
TWI330861B (en) Analysing system and charged particle beam device
KR102207766B1 (ko) 이차 전자 광학계 & 검출 디바이스
US6259094B1 (en) Electron beam inspection method and apparatus
CN112703573B (zh) 粒子束系统
JP2011238615A (ja) 電子の同時検出
KR102872217B1 (ko) 콘트라스트 보정 렌즈 시스템을 갖는 다중 입자 빔 시스템
TWI641019B (zh) 電子束成像設備、使用一電子束之成像方法及雙威恩過濾器單色器
JP4527289B2 (ja) オージェ電子の検出を含む粒子光学装置
JP4620221B2 (ja) エネルギ分解及び角度分解電子分光用の結像装置、その方法及び分光器
TWI784138B (zh) 測量反射電子的能量頻譜的裝置及方法
JP7188910B2 (ja) 粒子ビームを生成するための粒子源及び粒子光学装置
US9543115B2 (en) Electron microscope
US20080048116A1 (en) Charged particle beam device and method for inspecting specimen
US8957372B2 (en) Scanning electron microscope
TW202514699A (zh) 帶電粒子束裝置
CN114303229A (zh) 用于控制电子束的静电透镜
JP2016170978A (ja) 質量分析装置