CN111801764B - 测定背散射电子能谱的装置及方法 - Google Patents

测定背散射电子能谱的装置及方法 Download PDF

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Publication number
CN111801764B
CN111801764B CN201980016742.4A CN201980016742A CN111801764B CN 111801764 B CN111801764 B CN 111801764B CN 201980016742 A CN201980016742 A CN 201980016742A CN 111801764 B CN111801764 B CN 111801764B
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China
Prior art keywords
backscattered electrons
energy
wien filter
electron beam
detector
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CN201980016742.4A
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English (en)
Chinese (zh)
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CN111801764A (zh
Inventor
嘉藤诚
佐佐木澄夫
田中幸浩
山崎裕一郎
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Tasmit Inc
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Tasmit Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/29—Reflection microscopes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/05—Arrangements for energy or mass analysis
    • H01J2237/057—Energy or mass filtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/153—Correcting image defects, e.g. stigmators
    • H01J2237/1532—Astigmatism
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2446—Position sensitive detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/24475—Scattered electron detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/24485—Energy spectrometers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Electron Tubes For Measurement (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
CN201980016742.4A 2018-03-06 2019-03-01 测定背散射电子能谱的装置及方法 Active CN111801764B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018039636A JP7017437B2 (ja) 2018-03-06 2018-03-06 反射電子のエネルギースペクトルを測定する装置および方法
JP2018-039636 2018-03-06
PCT/JP2019/008066 WO2019172115A1 (ja) 2018-03-06 2019-03-01 反射電子のエネルギースペクトルを測定する装置および方法

Publications (2)

Publication Number Publication Date
CN111801764A CN111801764A (zh) 2020-10-20
CN111801764B true CN111801764B (zh) 2024-11-26

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Country Status (6)

Country Link
US (1) US11322332B2 (enExample)
JP (1) JP7017437B2 (enExample)
KR (1) KR102764341B1 (enExample)
CN (1) CN111801764B (enExample)
TW (1) TWI784138B (enExample)
WO (1) WO2019172115A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112071731B (zh) * 2020-07-23 2021-11-19 西安交通大学 一种基于维恩分析器校正二阶像差的设计方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4216730C2 (de) 1992-05-20 2003-07-24 Advantest Corp Rasterelektronenstrahlgerät
DE69920182T2 (de) 1998-12-17 2005-02-17 Fei Co., Hillsboro Korpuskularstrahloptisches gerät mit auger-elektronendetektion
KR101110224B1 (ko) * 2003-01-27 2012-02-15 가부시끼가이샤 도시바 샘플에서 반사된 전자들을 이용하여 샘플을 검사하는 맵핑 투영식 전자빔 장치
JP4256300B2 (ja) * 2004-05-28 2009-04-22 株式会社東芝 基板検査方法および基板検査装置
JP2006114225A (ja) 2004-10-12 2006-04-27 Hitachi High-Technologies Corp 荷電粒子線装置
KR101127813B1 (ko) 2004-12-29 2012-03-26 엘지디스플레이 주식회사 쉬프트 레지스터와 이를 이용한 액정 표시장치
US7205542B1 (en) * 2005-11-14 2007-04-17 Kla-Tencor Technologies Corporation Scanning electron microscope with curved axes
US7818073B2 (en) * 2006-04-20 2010-10-19 Asml Netherlands B.V. Method for obtaining improved feedforward data, a lithographic apparatus for carrying out the method and a device manufacturing method
US7755043B1 (en) * 2007-03-21 2010-07-13 Kla-Tencor Technologies Corporation Bright-field/dark-field detector with integrated electron energy spectrometer
DE102008041815A1 (de) * 2008-09-04 2010-04-15 Carl Zeiss Nts Gmbh Verfahren zur Analyse einer Probe
JP5771628B2 (ja) * 2010-12-16 2015-09-02 株式会社日立ハイテクノロジーズ 走査電子顕微鏡及びそれを用いた測長方法
CN103890895B (zh) * 2011-09-27 2016-05-18 Snu精度株式会社 具备反射电子检测功能的扫描电子显微镜
US9053900B2 (en) * 2012-04-03 2015-06-09 Kla-Tencor Corporation Apparatus and methods for high-resolution electron beam imaging
EP2824445B1 (en) * 2013-07-08 2016-03-02 Fei Company Charged-particle microscopy combined with raman spectroscopy
US10103002B1 (en) * 2016-05-20 2018-10-16 Carl Zeiss Microscopy Gmbh Method for generating an image of an object and particle beam device for carrying out the method
US20180005797A1 (en) * 2016-06-29 2018-01-04 Ngr Inc. Scanning electron microscope
JP6932565B2 (ja) * 2017-06-23 2021-09-08 Ｔａｓｍｉｔ株式会社 パターン欠陥検出方法
JP7107653B2 (ja) * 2017-08-31 2022-07-27 東レエンジニアリング先端半導体Ｍｉテクノロジー株式会社 画像生成方法

Also Published As

Publication number Publication date
JP7017437B2 (ja) 2022-02-08
KR20200127208A (ko) 2020-11-10
TWI784138B (zh) 2022-11-21
US20210012999A1 (en) 2021-01-14
KR102764341B1 (ko) 2025-02-07
WO2019172115A1 (ja) 2019-09-12
US11322332B2 (en) 2022-05-03
TW201941247A (zh) 2019-10-16
CN111801764A (zh) 2020-10-20
JP2019153537A (ja) 2019-09-12

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