JP2019140203A - 炭化珪素半導体装置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 103
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 98
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 96
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 210000000746 body region Anatomy 0.000 claims description 125
- 239000010410 layer Substances 0.000 claims description 51
- 239000011229 interlayer Substances 0.000 claims description 40
- 230000015556 catabolic process Effects 0.000 abstract description 16
- 238000006073 displacement reaction Methods 0.000 description 18
- 239000012535 impurity Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 230000005669 field effect Effects 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
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Abstract
Description
前記ソースパッドは前記第2ボディコンタクトを介して前記第2ボディ領域の第1部分と電気的に接続されていてもよい。
100u ユニットセル
101 炭化珪素半導体基板
101a 第1主面
101b 第2主面
102 ドリフト層
103 第1ボディ領域
104 ソース領域
105 第1コンタクト領域
106 炭化珪素半導体層
107 ゲート絶縁膜
108 ゲート電極
109 ソース電極
110 ドレイン電極
111 層間絶縁膜
112B 第1ボディコンタクト
112BB 第2ボディコンタクト
112BE 第2ボディコンタクトの延伸部分
112G ゲートコンタクト
112S ソースコンタクト
115 第2ボディ領域
115A 第2部分
115B〜115D 第1部分
116A 第2コンタクト領域
116B 第3コンタクト領域
119A 第1ベース電極
119B 第2ベース電極
150 ゲート上部電極
151 ゲートパッド
152、152A〜152C ゲートグローバル配線
153B ゲートグローバル配線
160 ソース上部電極
161A、161B ソースパッド
162A〜162D 外周ソース配線
170 ドレインパッド
201 炭化珪素半導体装置
Claims (7)
- 第1導電型のドリフト層を含む第1導電型の炭化珪素半導体基板と、
前記ドリフト層の表面に離散的に形成された複数の第2導電型の第1ボディ領域と、
前記複数の第1ボディ領域内にそれぞれ位置する複数の第1導電型のソース領域と、
前記ドリフト層の表面に形成されており、前記表面から見て前記複数の第1ボディ領域に隣接し、帯形状部分を含む複数の第1部分、および、複数の前記第1部分と接続された第2部分を含む第2導電型の第2ボディ領域と、
前記複数の第1ボディ領域と、前記ソース領域と、前記第2ボディ領域との上に位置するゲート絶縁膜と、
前記複数の第1ボディ領域と、前記複数のソース領域の一部と、前記第2ボディ領域の前記第1部分とにおいて、前記ゲート絶縁膜上に形成されたゲート電極と、
前記ゲート電極、前記ゲート電極から露出したゲート絶縁膜および前記第2ボディ領域の第2部分上に位置する層間絶縁膜と、
前記ゲート絶縁膜および前記層間絶縁膜に設けられ、前記各ソース領域に位置する複数のソースコンタクトと、
前記複数のソースコンタクトを介して前記ソース領域と電気的に接続し、前記層間絶縁膜の一部上に位置するソースパッドと、
前記第2ボディ領域の複数の第1部分において、前記層間絶縁膜に設けられ、前記ゲート電極の一部を露出するゲートコンタクトと、
前記第2ボディ領域の前記第2部分において、前記層間絶縁膜上に位置するゲートパッドと、
前記第2ボディ領域の複数の第1部分において、前記ゲートコンタクトを介して前記ゲート電極と電気的に接続し、前記ゲートパッドと接続しているゲートグローバル配線と、
を備え、
前記ドリフト層の表面からみて、前記ゲート電極は前記ゲートパッドと重なっていない、炭化珪素半導体装置。 - 前記層間絶縁膜および前記ゲート絶縁膜に設けられ、前記ドリフト層の表面からみて、前記ゲートパッドの外縁の一部に沿って伸び、前記第2ボディ領域の第2部分に位置する第1ボディコンタクトをさらに備え、前記ソースパッドは前記第1ボディコンタクトを介して前記第2ボディ領域の第2部分と電気的に接続されている、請求項1に記載の炭化珪素半導体装置。
- 前記第1ボディコンタクトは、前記ゲートグローバル配線に沿って伸び、前記第2ボディ領域の第1部分を露出する部分をさらに含む請求項2に記載の炭化珪素半導体装置。
- 前記ドリフト層の表面からみて、前記第1ボディコンタクトは、前記ゲート電極と前記ゲートパッドとの間に位置している、請求項2または3に記載の炭化珪素半導体装置。
- 前記ゲート絶縁膜および前記層間絶縁膜に設けられ、前記複数のソースコンタクトと前記ゲートコンタクトの間であって、前記第2ボディ領域の第1部分に位置する、第2ボディコンタクトをさらに備え、
前記ソースパッドは前記第2ボディコンタクトを介して前記第2ボディ領域の第1部分と電気的に接続されている、請求項1に記載の炭化珪素半導体装置。 - 前記複数の第1ボディ領域のソース領域内に形成され、前記第1ボディ領域に達する第2導電型の第1コンタクト領域と、
前記第1コンタクト領域および前記ソース領域と電気的に接続されたソース電極と、
前記第2ボディ領域内に形成された、第2導電型の第2コンタクト領域と、
前記第2ボディ領域内に形成された、第2導電型の第3コンタクト領域と、
前記第2コンタクト領域と電気的に接続された第1ベース電極と、
前記第3コンタクト領域と電気的に接続された第2ベース電極と、
をさらに備え、
前記ソースコンタクトは前記ソース電極を露出し、前記第1ボディコンタクトは前記第1ベース電極を露出し、前記第2ボディコンタクトは前記第2ベース電極を露出している、請求項1から5のいずれかに記載の炭化珪素半導体装置。 - 前記第2コンタクト領域は前記第1ベース電極に三辺を囲まれた前記第2ボディ領域内の少なくとも一部に位置し、
前記第3コンタクト領域は離散した前記第2ベース電極に挟まれた前記第2ボディ領域内の少なくとも一部に位置している、請求項1から6のいずれかに記載の炭化珪素半導体装置。
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JP2018021067A JP7113221B2 (ja) | 2018-02-08 | 2018-02-08 | 炭化珪素半導体装置 |
US16/255,875 US10672878B2 (en) | 2018-02-08 | 2019-01-24 | Silicon carbide semiconductor device |
CN201910089015.2A CN110137240A (zh) | 2018-02-08 | 2019-01-29 | 碳化硅半导体装置 |
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