JP2019139823A - 半導体記憶装置 - Google Patents
半導体記憶装置 Download PDFInfo
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- JP2019139823A JP2019139823A JP2018019747A JP2018019747A JP2019139823A JP 2019139823 A JP2019139823 A JP 2019139823A JP 2018019747 A JP2018019747 A JP 2018019747A JP 2018019747 A JP2018019747 A JP 2018019747A JP 2019139823 A JP2019139823 A JP 2019139823A
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0023—Address circuits or decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/003—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0033—Disturbance prevention or evaluation; Refreshing of disturbed memory data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0035—Evaluating degradation, retention or wearout, e.g. by counting writing cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/0083—Write to perform initialising, forming process, electro forming or conditioning
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/0092—Write characterized by the shape, e.g. form, length, amplitude of the write pulse
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/564—Miscellaneous aspects
- G11C2211/5641—Multilevel memory having cells with different number of storage levels
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/564—Miscellaneous aspects
- G11C2211/5646—Multilevel memory with flag bits, e.g. for showing that a "first page" of a word line is programmed but not a "second page"
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/79—Array wherein the access device being a transistor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/82—Array having, for accessing a cell, a word line, a bit line and a plate or source line receiving different potentials
Abstract
Description
110:メモリアレイ
120:行デコーダおよび駆動回路(X−DEC)
130:列デコーダ(Y−DEC)
140:入出力バッファ
150:制御回路
160:センスアンプ
170:書込みドライバ・読出しバイアス回路170
Claims (15)
- 可逆性かつ不揮発性の可変抵抗素子を含むメモリアレイと、
書込みコマンドの種類に応じて選択された書込み条件により前記メモリアレイにデータを書込む書込み手段と、
を有する半導体記憶装置。 - 半導体記憶装置はさらに、書込み条件を規定するアルゴリズムを格納する格納手段を含み、前記書込み手段は、書込みコマンドに対応するアルゴリズムを選択する、請求項1に記載の半導体記憶装置。
- 前記メモリアレイには、複数の書込み条件に応じた複数の記憶領域が設定され、前記書込み手段は、前記書込み条件に対応する記憶領域にデータを書込む、請求項1または2に記載の半導体記憶装置。
- 前記書込みコマンドは、信頼性の向上を指向するコマンドを含む、請求項1に記載の半導体記憶装置。
- 前記書込みコマンドは、読出し動作速度の向上を指向するコマンドを含む、請求項1または4に記載の半導体記憶装置。
- 可逆性かつ不揮発性の可変抵抗素子を含むメモリアレイと、
書込み動作の際、外部から入力されたアドレスに応じて選択された書込み条件により前記メモリアレイにデータを書込む書込み手段と、
を有する半導体記憶装置。 - 前記メモリアレイには、複数の書込み条件に応じた複数の記憶領域が設定され、前記書込み手段は、入力されたアドレスに対応する記憶領域に設定された書込み条件に基づき書込みを行う、請求項6に記載の半導体記憶装置。
- 半導体記憶装置はさらに、前記メモリアレイの選択された記憶領域に記憶されたデータをリフレッシュする手段を含む、請求項1または6に記載の半導体記憶装置。
- 前記リフレッシュ手段は、同一データの再書込みすることを含む、請求項8に記載の半導体記憶装置。
- 前記リフレッシュ手段は、外部から入力されたコマンドに応答して実行される、請求項8に記載の半導体記憶装置。
- 前記リフレッシュ手段は、記憶領域に記憶されたデータが無効となる兆候を検出する検出手段を含み、当該検出結果に応答してリフレッシュを実行する、請求項8に記載の半導体記憶装置。
- 半導体記憶装置はさらに、前記メモリアレイのある記憶領域に記憶されたデータを他の記憶領域に移動させる移動手段を含む、請求項1または6に記載の半導体記憶装置。
- 前記移動手段は、外部から入力されたコマンドに応答して実行される、請求項12に記載の半導体記憶装置。
- 前記書込み条件は、選択された可変抵抗素子に印加する書込みパルス時間を含む、請求項1にまたは6に記載の半導体記憶装置。
- 前記書込み条件は、選択された可変抵抗素子に印加する書込みパルスの電圧レベルを含む、請求項1にまたは6に記載の半導体記憶装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018019747A JP6517385B1 (ja) | 2018-02-07 | 2018-02-07 | 半導体記憶装置 |
US16/184,961 US11735260B2 (en) | 2018-02-07 | 2018-11-08 | Semiconductor memory device |
TW108102154A TWI699766B (zh) | 2018-02-07 | 2019-01-19 | 半導體記憶體裝置 |
KR1020190010007A KR102143291B1 (ko) | 2018-02-07 | 2019-01-25 | 반도체 메모리 디바이스 |
CN201910097592.6A CN110120239B (zh) | 2018-02-07 | 2019-01-31 | 半导体存储器装置 |
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JP2018019747A JP6517385B1 (ja) | 2018-02-07 | 2018-02-07 | 半導体記憶装置 |
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JP6517385B1 JP6517385B1 (ja) | 2019-05-22 |
JP2019139823A true JP2019139823A (ja) | 2019-08-22 |
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US (1) | US11735260B2 (ja) |
JP (1) | JP6517385B1 (ja) |
KR (1) | KR102143291B1 (ja) |
CN (1) | CN110120239B (ja) |
TW (1) | TWI699766B (ja) |
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EP4111266A1 (en) * | 2020-02-28 | 2023-01-04 | 3M Innovative Properties Company | Deep causal learning for advanced model predictive control |
WO2021171152A1 (en) | 2020-02-28 | 2021-09-02 | 3M Innovative Properties Company | Deep causal learning for data storage and processing power management |
Family Cites Families (22)
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JP2003186739A (ja) * | 2001-12-13 | 2003-07-04 | Seiko Epson Corp | 半導体記憶装置、制御装置及び半導体記憶装置の制御方法 |
US7170793B2 (en) * | 2004-04-13 | 2007-01-30 | Sandisk Corporation | Programming inhibit for non-volatile memory |
JP4655000B2 (ja) | 2006-08-01 | 2011-03-23 | セイコーエプソン株式会社 | 可変抵抗素子および抵抗変化型メモリ装置 |
KR100801082B1 (ko) | 2006-11-29 | 2008-02-05 | 삼성전자주식회사 | 멀티 레벨 가변 저항 메모리 장치의 구동 방법 및 멀티레벨 가변 저항 메모리 장치 |
JP5172269B2 (ja) * | 2007-10-17 | 2013-03-27 | 株式会社東芝 | 不揮発性半導体記憶装置 |
KR101411499B1 (ko) * | 2008-05-19 | 2014-07-01 | 삼성전자주식회사 | 가변 저항 메모리 장치 및 그것의 관리 방법 |
KR20090123244A (ko) * | 2008-05-27 | 2009-12-02 | 삼성전자주식회사 | 상 변화 메모리 장치 및 그것의 쓰기 방법 |
CN101441890B (zh) | 2008-12-18 | 2011-11-30 | 中国科学院微电子研究所 | 电阻转变型存储器及其驱动装置和方法 |
US8432729B2 (en) * | 2010-04-13 | 2013-04-30 | Mosaid Technologies Incorporated | Phase-change memory with multiple polarity bits having enhanced endurance and error tolerance |
US9496033B2 (en) * | 2010-08-20 | 2016-11-15 | Attopsemi Technology Co., Ltd | Method and system of programmable resistive devices with read capability using a low supply voltage |
JP5351863B2 (ja) | 2010-09-17 | 2013-11-27 | シャープ株式会社 | 不揮発性半導体記憶装置及び不揮発性半導体記憶装置の制御方法 |
WO2012132341A1 (ja) * | 2011-03-25 | 2012-10-04 | パナソニック株式会社 | 抵抗変化型不揮発性素子の書き込み方法および記憶装置 |
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KR102147359B1 (ko) * | 2012-06-29 | 2020-08-24 | 삼성전자 주식회사 | 비휘발성 메모리 장치의 관리 방법 및 비휘발성 메모리 장치 |
US9171616B2 (en) * | 2013-08-09 | 2015-10-27 | Macronix International Co., Ltd. | Memory with multiple levels of data retention |
US9240235B2 (en) * | 2013-12-19 | 2016-01-19 | Sandisk Technologies Inc. | Mitigating disturb effects for non-volatile memory |
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JP6360627B2 (ja) * | 2015-04-28 | 2018-07-18 | 株式会社日立製作所 | 不揮発性メモリの制御方法、制御装置、および半導体記憶装置 |
KR102285785B1 (ko) | 2015-06-02 | 2021-08-04 | 삼성전자 주식회사 | 저항성 메모리 장치 및 상기 저항성 메모리 장치를 포함하는 메모리 시스템 |
WO2016194175A1 (ja) | 2015-06-03 | 2016-12-08 | 株式会社日立製作所 | ストレージシステム |
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2018
- 2018-02-07 JP JP2018019747A patent/JP6517385B1/ja active Active
- 2018-11-08 US US16/184,961 patent/US11735260B2/en active Active
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2019
- 2019-01-19 TW TW108102154A patent/TWI699766B/zh active
- 2019-01-25 KR KR1020190010007A patent/KR102143291B1/ko active IP Right Grant
- 2019-01-31 CN CN201910097592.6A patent/CN110120239B/zh active Active
Also Published As
Publication number | Publication date |
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TWI699766B (zh) | 2020-07-21 |
KR102143291B1 (ko) | 2020-08-11 |
US11735260B2 (en) | 2023-08-22 |
CN110120239B (zh) | 2021-11-30 |
KR20190095884A (ko) | 2019-08-16 |
CN110120239A (zh) | 2019-08-13 |
JP6517385B1 (ja) | 2019-05-22 |
US20190244663A1 (en) | 2019-08-08 |
TW201939503A (zh) | 2019-10-01 |
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