JP2019124771A - 表示装置 - Google Patents
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- JP2019124771A JP2019124771A JP2018003913A JP2018003913A JP2019124771A JP 2019124771 A JP2019124771 A JP 2019124771A JP 2018003913 A JP2018003913 A JP 2018003913A JP 2018003913 A JP2018003913 A JP 2018003913A JP 2019124771 A JP2019124771 A JP 2019124771A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 111
- 239000000758 substrate Substances 0.000 claims abstract description 90
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 25
- 229920005591 polysilicon Polymers 0.000 claims abstract description 24
- 239000011347 resin Substances 0.000 claims abstract description 21
- 229920005989 resin Polymers 0.000 claims abstract description 21
- 239000000463 material Substances 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 229910010272 inorganic material Inorganic materials 0.000 claims description 2
- 239000011147 inorganic material Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000004642 Polyimide Substances 0.000 abstract description 27
- 229920001721 polyimide Polymers 0.000 abstract description 27
- 239000010408 film Substances 0.000 description 108
- 239000010410 layer Substances 0.000 description 94
- 239000011229 interlayer Substances 0.000 description 28
- 239000004973 liquid crystal related substance Substances 0.000 description 21
- 239000011521 glass Substances 0.000 description 16
- 230000000694 effects Effects 0.000 description 11
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- 230000003071 parasitic effect Effects 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 238000003860 storage Methods 0.000 description 10
- 239000003990 capacitor Substances 0.000 description 9
- 238000002161 passivation Methods 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910018575 Al—Ti Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- -1 Zinc Oxide Nitride Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229920005575 poly(amic acid) Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 1
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1251—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
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- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
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- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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Abstract
Description
前記第1のTFTと前記第2のTFTは平面で視て重ならない場所に形成され、
前記第2のTFTは前記第1のTFTよりも、断面で視て、前記基板に近く形成され、
前記酸化物半導体と前記基板の間には、前記第1のポリシリコンと同じ材料で形成され、前記第1のポリシリコンが形成されているのと同じ層の上に形成された第2のポリシリコンが存在していることを特徴とする表示装置。
Claims (20)
- 樹脂で形成された基板上に酸化物半導体によって形成された第1のTFTと第1のポリシリコンによって形成された第2のTFTを有する表示装置であって、
前記第1のTFTと前記第2のTFTは平面で視て重ならない場所に形成され、
前記第2のTFTは前記第1のTFTよりも、断面で視て、前記基板に近く形成され、
前記酸化物半導体と前記基板の間には、前記第1のポリシリコンと同じ材料で形成され、前記第1のポリシリコンが形成されているのと同じ層の上に形成された第2のポリシリコンが存在していることを特徴とする表示装置。 - 前記第2のポリシリコンの前記酸化物半導体のチャネル長方向の長さは、前記酸化物半導体のチャネル長方向の長さよりも大きいことを特徴とする請求項1に記載の表示装置。
- 前記第2のポリシリコンの前記酸化物半導体のチャネル幅方向の幅は、前記酸化物半導体のチャネル幅方向の幅よりも大きいことを特徴とする請求項1に記載の表示装置。
- 前記酸化物半導体の下層には、絶縁膜を挟んで、前記第2のTFTのゲート電極と同じ材料で同じ層の上に形成された金属層が形成され、
前記金属層の前記酸化物半導体のチャネル長方向の長さは、前記酸化物半導体の前記チャネル長方向の長さよりも小さいことを特徴とする請求項1に記載の表示装置。 - 前記酸化物半導体の下層には、絶縁膜を挟んで、前記第2のTFTのゲート電極と同じ材料で同じ層の上に形成された金属層が形成され、
前記金属層の前記酸化物半導体のチャネル長方向の長さは、前記第2のポリシリコンの前記チャネル長方向の長さよりも小さいことを特徴とする請求項1に記載の表示装置。 - 前記酸化物半導体の下層には、絶縁膜を挟んで、前記第2のTFTのゲート電極と同じ材料で同じ層の上に形成された金属層が形成され、
前記金属層には、ゲート電位が供給されることを特徴とする請求項1に記載の表示装置。 - 前記酸化物半導体の下層には、絶縁膜を挟んで、前記第2のTFTのゲート電極と同じ材料で同じ層の上に形成された金属層が形成され、
前記金属層には、基準電位が供給されることを特徴とする請求項1に記載の表示装置。 - 前記第2のポリシリコンには基準電位が供給されることを特徴とする請求項1に記載の表示装置。
- 前記第1のTFTはトップゲートであることを特徴とする請求項1に記載の表示装置。
- 前記第2のTFTはトップゲートであることを特徴とする請求項1に記載の表示装置。
- 樹脂で形成された基板上に酸化物半導体によって形成された第1のTFTを有する表示装置であって、
平面で視て、前記酸化物半導体と重複した領域に、前記基板と接触して第1の導電膜が形成され、前記第1の導電膜の上に、無機材料からなる下地膜が形成され、
前記酸化物半導体はチャネル長とチャネル幅を有し、
前記第1の導電膜の前記チャネル長方向の長さは、前記酸化物半導体の前記チャネル長方向の長さよりも大きいことを特徴とする表示装置。 - 前記第1の導電膜の前記チャネル幅方向の幅は、前記酸化物半導体の前記チャネル幅方向の幅よりも大きいことを特徴とする請求項11に記載の表示装置。
- 前記第1の導電膜は金属で形成されていることを特徴とする請求項11に記載の表示装置。
- 前記第1の導電膜には基準電位が印加されていることを特徴とする請求項11に記載の表示装置。
- 前記基板には、平面で視て、前記第1のTFTとは重ならない場所にポリシリコンによる第2のTFTが形成され、
前記第2のTFTは前記第1のTFTよりも、断面で視て、前記基板に近く形成されていることを特徴とする請求項11に記載の表示装置。 - 平面で視て、前記ポリシリコンと重複する部分を有し前記基板と前記下地膜の間には、第1の導電膜と同じ材料で形成された第2の導電膜が形成されていることを特徴とする請求項11に記載の表示装置。
- 前記ポリシリコンは、チャネル長とチャネル幅を有し、
前記第2の導電膜の前記チャネル長さ方向の長さは、前記ポリシリコンの前記チャネル長さ方向の長さよりも小さいことを特徴とする請求項11に記載の表示装置。 - 前記第2の導電膜には基準電位が印加されることを特徴とする請求項11に記載の表示装置。
- 前記酸化物半導体と前記下地膜の間には、前記第2のTFTのゲート電極と同じ材料で、同じ層の上に形成された金属膜が形成され、
前記金属膜の前記チャネル長さ方向の長さは、前記酸化物半導体の前記チャネル長さ方向の長さよりも小さいことを特徴とする請求項15に記載の表示装置。 - 前記金属膜にはゲート電位が供給されることを特徴とする請求項19に記載の表示装置。
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021060058A1 (ja) * | 2019-09-24 | 2021-04-01 | 東レ株式会社 | 樹脂膜、電子デバイス、樹脂膜の製造方法および電子デバイスの製造方法 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW202204995A (zh) * | 2020-03-20 | 2022-02-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的製造方法 |
KR20210152083A (ko) * | 2020-06-05 | 2021-12-15 | 삼성디스플레이 주식회사 | 표시 장치 |
CN112038325B (zh) * | 2020-08-20 | 2022-08-23 | 武汉华星光电半导体显示技术有限公司 | 显示面板 |
US20220336676A1 (en) * | 2020-09-18 | 2022-10-20 | Chengdu Boe Optoelectronics Technology Co.,Ltd. | Display substrate, display panel and display device |
CN112289807A (zh) * | 2020-10-27 | 2021-01-29 | 武汉华星光电半导体显示技术有限公司 | 一种oled显示面板 |
KR20220067659A (ko) * | 2020-11-17 | 2022-05-25 | 삼성디스플레이 주식회사 | 표시 장치 |
CN112786670B (zh) * | 2021-01-11 | 2022-07-29 | 武汉华星光电半导体显示技术有限公司 | 一种阵列基板、显示面板及阵列基板的制作方法 |
WO2022219449A1 (ja) * | 2021-04-16 | 2022-10-20 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
CN114242736A (zh) * | 2021-12-17 | 2022-03-25 | 湖北长江新型显示产业创新中心有限公司 | 一种显示面板及显示装置 |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09312398A (ja) * | 1996-05-22 | 1997-12-02 | Toyota Central Res & Dev Lab Inc | 半導体装置およびその製造方法 |
JP2004327539A (ja) * | 2003-04-22 | 2004-11-18 | Seiko Epson Corp | 半導体装置の製造方法及び半導体装置、並びにこれを備えた電気光学装置及び電子機器 |
JP2009135350A (ja) * | 2007-12-03 | 2009-06-18 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
JP2011048339A (ja) * | 2009-08-25 | 2011-03-10 | Samsung Mobile Display Co Ltd | 有機発光表示装置及びその製造方法 |
US20150123084A1 (en) * | 2013-11-05 | 2015-05-07 | Samsung Display Co., Ltd. | Thin film transistor array substrate, organic light-emitting display apparatus and method of manufacturing the thin film transistor array substrate |
WO2016067154A1 (ja) * | 2014-10-29 | 2016-05-06 | 株式会社半導体エネルギー研究所 | 表示素子、表示装置、または電子機器 |
JP2016534390A (ja) * | 2013-08-26 | 2016-11-04 | アップル インコーポレイテッド | シリコン薄膜トランジスタ及び半導体酸化物薄膜トランジスタを有するディスプレイ |
JP2017505457A (ja) * | 2014-01-21 | 2017-02-16 | アップル インコーポレイテッド | 底部シールドを有する有機発光ダイオードディスプレイ |
JP2017143255A (ja) * | 2016-02-05 | 2017-08-17 | 株式会社半導体エネルギー研究所 | 半導体装置、電子機器 |
JP2017143239A (ja) * | 2015-08-04 | 2017-08-17 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作成方法 |
JP2017208473A (ja) * | 2016-05-19 | 2017-11-24 | 株式会社ジャパンディスプレイ | 表示装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100521275B1 (ko) * | 2003-06-16 | 2005-10-13 | 삼성에스디아이 주식회사 | 씨모스 박막 트래지스터 및 이를 사용한 디스플레이디바이스 |
US20080150013A1 (en) * | 2006-12-22 | 2008-06-26 | Alpha & Omega Semiconductor, Ltd | Split gate formation with high density plasma (HDP) oxide layer as inter-polysilicon insulation layer |
KR20120037838A (ko) * | 2010-10-12 | 2012-04-20 | 삼성전자주식회사 | 트랜지스터 및 이를 포함하는 전자소자 |
CN102709184B (zh) * | 2011-05-13 | 2016-08-17 | 京东方科技集团股份有限公司 | 含有多晶硅有源层的薄膜晶体管、其制造方法及阵列基板 |
CN103268876B (zh) * | 2012-09-27 | 2016-03-30 | 厦门天马微电子有限公司 | 静电释放保护电路、显示面板和显示装置 |
KR102141557B1 (ko) * | 2013-12-26 | 2020-08-05 | 엘지디스플레이 주식회사 | 어레이 기판 |
KR102325191B1 (ko) * | 2015-01-05 | 2021-11-10 | 삼성디스플레이 주식회사 | 표시 장치 |
CN204479880U (zh) * | 2015-02-28 | 2015-07-15 | 厦门天马微电子有限公司 | 一种彩膜基板及液晶显示装置 |
CN106876412A (zh) * | 2017-03-15 | 2017-06-20 | 厦门天马微电子有限公司 | 一种阵列基板以及制作方法 |
CN107204345B (zh) * | 2017-05-23 | 2019-08-13 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法、显示装置 |
CN107316873B (zh) * | 2017-07-19 | 2020-03-10 | 武汉天马微电子有限公司 | 一种阵列基板及显示装置 |
-
2018
- 2018-01-15 JP JP2018003913A patent/JP7085352B2/ja active Active
- 2018-12-04 WO PCT/JP2018/044508 patent/WO2019138734A1/ja active Application Filing
- 2018-12-04 CN CN201880086103.0A patent/CN111587453B/zh active Active
-
2020
- 2020-06-25 US US16/911,930 patent/US20200326571A1/en active Pending
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09312398A (ja) * | 1996-05-22 | 1997-12-02 | Toyota Central Res & Dev Lab Inc | 半導体装置およびその製造方法 |
JP2004327539A (ja) * | 2003-04-22 | 2004-11-18 | Seiko Epson Corp | 半導体装置の製造方法及び半導体装置、並びにこれを備えた電気光学装置及び電子機器 |
JP2009135350A (ja) * | 2007-12-03 | 2009-06-18 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
JP2011048339A (ja) * | 2009-08-25 | 2011-03-10 | Samsung Mobile Display Co Ltd | 有機発光表示装置及びその製造方法 |
JP2016534390A (ja) * | 2013-08-26 | 2016-11-04 | アップル インコーポレイテッド | シリコン薄膜トランジスタ及び半導体酸化物薄膜トランジスタを有するディスプレイ |
US20150123084A1 (en) * | 2013-11-05 | 2015-05-07 | Samsung Display Co., Ltd. | Thin film transistor array substrate, organic light-emitting display apparatus and method of manufacturing the thin film transistor array substrate |
JP2017505457A (ja) * | 2014-01-21 | 2017-02-16 | アップル インコーポレイテッド | 底部シールドを有する有機発光ダイオードディスプレイ |
WO2016067154A1 (ja) * | 2014-10-29 | 2016-05-06 | 株式会社半導体エネルギー研究所 | 表示素子、表示装置、または電子機器 |
JP2017143239A (ja) * | 2015-08-04 | 2017-08-17 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作成方法 |
JP2017143255A (ja) * | 2016-02-05 | 2017-08-17 | 株式会社半導体エネルギー研究所 | 半導体装置、電子機器 |
JP2017208473A (ja) * | 2016-05-19 | 2017-11-24 | 株式会社ジャパンディスプレイ | 表示装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021060058A1 (ja) * | 2019-09-24 | 2021-04-01 | 東レ株式会社 | 樹脂膜、電子デバイス、樹脂膜の製造方法および電子デバイスの製造方法 |
CN114341270A (zh) * | 2019-09-24 | 2022-04-12 | 东丽株式会社 | 树脂膜、电子器件、树脂膜的制造方法及电子器件的制造方法 |
CN114341270B (zh) * | 2019-09-24 | 2024-03-08 | 东丽株式会社 | 树脂膜、电子器件、树脂膜的制造方法及电子器件的制造方法 |
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