JP2019087689A - 窒化物半導体装置とその製造方法 - Google Patents
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41741—Source or drain electrodes for field effect devices for vertical or pseudo-vertical devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Abstract
Description
20:窒化物半導体層
22:ドリフト領域
22a:ドリフト層
22b:JFET領域
24:ボディ領域
24a:埋め込み領域
24b:チャネル領域
26:ソース領域
32:ドレイン電極
34:ソース電極
36:絶縁ゲート部
36a:ゲート絶縁膜
36b:ゲート電極
38:ボディ電極
38T:溝
38a:ボディ表面電極
38b:ボディ充填電極
42:溝
44:絶縁膜
Claims (5)
- 基板上に窒化物半導体層を形成する窒化物半導体層形成工程と、
前記基板の裏面から溝を形成する溝形成工程と、
前記溝形成工程の後に、前記窒化物半導体層をアニール処理するアニール工程と、を備えており、
前記窒化物半導体層は、
ドリフト層と、前記ドリフト層の表面から突出して設けられているJFET領域と、を有するn型のドリフト領域と、
前記JFET領域に隣接しており、前記窒化物半導体層内に埋め込まれているp型の埋め込み領域と、を有しており、
前記溝は、前記窒化物半導体層の表面に直交する方向から観測したときに、前記埋め込み領域の存在範囲内において、前記基板及び前記ドリフト層を貫通して前記埋め込み領域に達する、窒化物半導体装置の製造方法。 - 前記溝は、前記基板の裏面に向けて先細りのテーパ状である、請求項1に記載の窒化物半導体装置の製造方法。
- 基板と、
前記基板上に設けられている窒化物半導体層と、を備えており、
前記窒化物半導体層は、
ドリフト層と、前記ドリフト層の表面から突出して設けられているJFET領域と、を有するn型のドリフト領域と、
前記JFET領域に隣接しており、前記窒化物半導体層内に埋め込まれているp型の埋め込み領域と、を有しており、
前記窒化物半導体層の表面に直交する方向から観測したときに、前記埋め込み領域の存在範囲内において、前記基板及び前記ドリフト層を貫通して前記埋め込み領域に達する溝が形成されている、窒化物半導体装置。 - 前記溝は、前記基板の裏面に向けて先細りのテーパ状である、請求項3に記載の窒化物半導体装置。
- 前記窒化物半導体層の前記表面の一部に設けられている絶縁ゲート部と、
前記窒化物半導体層の前記表面の他の一部に設けられているソース電極と、
前記基板の裏面に設けられているドレイン電極と、をさらに備えており、
前記窒化物半導体層は、
前記埋め込み領域上に設けられており、前記窒化物半導体層の前記表面に露出しており、前記埋め込み領域よりも不純物濃度が薄いp型のチャネル領域と、
前記チャネル領域によって前記JFET領域から隔てられており、前記窒化物半導体層の前記表面に露出するn型のソース領域と、をさらに有しており、
前記絶縁ゲート部は、前記JFET領域と前記ソース領域を隔てている前記チャネル領域に対向しており、
前記ソース電極は、前記ソース領域に接している、請求項3又は4に記載の窒化物半導体装置。
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006156658A (ja) * | 2004-11-29 | 2006-06-15 | Toshiba Corp | 半導体装置 |
JP2011243670A (ja) * | 2010-05-17 | 2011-12-01 | Fuji Electric Co Ltd | 半導体装置の製造方法 |
JP2012174831A (ja) * | 2011-02-21 | 2012-09-10 | Fuji Electric Co Ltd | ワイドバンドギャップ逆阻止mos型半導体装置 |
JP2014150211A (ja) * | 2013-02-04 | 2014-08-21 | Pawdec:Kk | 半導体素子の製造方法、絶縁ゲート型電界効果トランジスタ、絶縁ゲート型電界効果トランジスタの製造方法、半導体発光素子の製造方法および太陽電池の製造方法 |
JP2015019070A (ja) * | 2013-07-11 | 2015-01-29 | ソウル セミコンダクター カンパニー リミテッド | p型ガリウムナイトライド電流障壁層を有する垂直型トランジスタおよびその製造方法 |
JP2015115430A (ja) * | 2013-12-11 | 2015-06-22 | 豊田合成株式会社 | 半導体装置およびその製造方法 |
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006156658A (ja) * | 2004-11-29 | 2006-06-15 | Toshiba Corp | 半導体装置 |
JP2011243670A (ja) * | 2010-05-17 | 2011-12-01 | Fuji Electric Co Ltd | 半導体装置の製造方法 |
JP2012174831A (ja) * | 2011-02-21 | 2012-09-10 | Fuji Electric Co Ltd | ワイドバンドギャップ逆阻止mos型半導体装置 |
JP2014150211A (ja) * | 2013-02-04 | 2014-08-21 | Pawdec:Kk | 半導体素子の製造方法、絶縁ゲート型電界効果トランジスタ、絶縁ゲート型電界効果トランジスタの製造方法、半導体発光素子の製造方法および太陽電池の製造方法 |
JP2015019070A (ja) * | 2013-07-11 | 2015-01-29 | ソウル セミコンダクター カンパニー リミテッド | p型ガリウムナイトライド電流障壁層を有する垂直型トランジスタおよびその製造方法 |
JP2015115430A (ja) * | 2013-12-11 | 2015-06-22 | 豊田合成株式会社 | 半導体装置およびその製造方法 |
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