JP2019054014A - エッチング方法及びエッチング装置 - Google Patents

エッチング方法及びエッチング装置 Download PDF

Info

Publication number
JP2019054014A
JP2019054014A JP2016018189A JP2016018189A JP2019054014A JP 2019054014 A JP2019054014 A JP 2019054014A JP 2016018189 A JP2016018189 A JP 2016018189A JP 2016018189 A JP2016018189 A JP 2016018189A JP 2019054014 A JP2019054014 A JP 2019054014A
Authority
JP
Japan
Prior art keywords
gas
etching
gas supply
film
cobalt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2016018189A
Other languages
English (en)
Japanese (ja)
Inventor
章史 八尾
Akifumi Yao
章史 八尾
邦裕 山内
Kunihiro Yamauchi
邦裕 山内
達夫 宮崎
Tatsuo Miyazaki
達夫 宮崎
林　軍
Gun Hayashi
軍 林
考司 竹谷
Koji Takeya
考司 竹谷
立花　光博
Mitsuhiro Tachibana
光博 立花
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Central Glass Co Ltd
Tokyo Electron Ltd
Original Assignee
Central Glass Co Ltd
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Central Glass Co Ltd, Tokyo Electron Ltd filed Critical Central Glass Co Ltd
Priority to JP2016018189A priority Critical patent/JP2019054014A/ja
Priority to PCT/JP2016/086677 priority patent/WO2017134930A1/ja
Priority to TW106101049A priority patent/TW201739962A/zh
Publication of JP2019054014A publication Critical patent/JP2019054014A/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2016018189A 2016-02-02 2016-02-02 エッチング方法及びエッチング装置 Pending JP2019054014A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2016018189A JP2019054014A (ja) 2016-02-02 2016-02-02 エッチング方法及びエッチング装置
PCT/JP2016/086677 WO2017134930A1 (ja) 2016-02-02 2016-12-09 エッチング方法及びエッチング装置
TW106101049A TW201739962A (zh) 2016-02-02 2017-01-12 蝕刻方法及蝕刻裝置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016018189A JP2019054014A (ja) 2016-02-02 2016-02-02 エッチング方法及びエッチング装置

Publications (1)

Publication Number Publication Date
JP2019054014A true JP2019054014A (ja) 2019-04-04

Family

ID=59499519

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016018189A Pending JP2019054014A (ja) 2016-02-02 2016-02-02 エッチング方法及びエッチング装置

Country Status (3)

Country Link
JP (1) JP2019054014A (zh)
TW (1) TW201739962A (zh)
WO (1) WO2017134930A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2021192352A1 (zh) * 2020-03-27 2021-09-30

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6559107B2 (ja) * 2016-09-09 2019-08-14 東京エレクトロン株式会社 成膜方法および成膜システム
JP7063117B2 (ja) * 2018-03-30 2022-05-09 東京エレクトロン株式会社 エッチング方法及びエッチング装置
WO2020179449A1 (ja) * 2019-03-01 2020-09-10 セントラル硝子株式会社 ドライエッチング方法、半導体デバイスの製造方法及びエッチング装置
JP7379993B2 (ja) * 2019-09-20 2023-11-15 東京エレクトロン株式会社 エッチング装置及びエッチング方法
CN114616651A (zh) * 2019-10-23 2022-06-10 中央硝子株式会社 干式蚀刻方法、半导体器件的制造方法和蚀刻装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009043973A (ja) * 2007-08-09 2009-02-26 Tokyo Electron Ltd 半導体装置の製造方法、半導体基板の処理装置及び記憶媒体
JP5929386B2 (ja) * 2012-03-22 2016-06-08 セントラル硝子株式会社 成膜装置内の金属膜のドライクリーニング方法
JP2015012243A (ja) * 2013-07-01 2015-01-19 東京エレクトロン株式会社 被処理体の処理方法
US9147581B2 (en) * 2013-07-11 2015-09-29 Lam Research Corporation Dual chamber plasma etcher with ion accelerator

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2021192352A1 (zh) * 2020-03-27 2021-09-30
WO2021192352A1 (ja) * 2020-03-27 2021-09-30 株式会社日立ハイテク 半導体製造方法
US11915939B2 (en) 2020-03-27 2024-02-27 Hitachi High-Tech Corporation Semiconductor fabricating method

Also Published As

Publication number Publication date
TW201739962A (zh) 2017-11-16
WO2017134930A1 (ja) 2017-08-10

Similar Documents

Publication Publication Date Title
US9991138B2 (en) Etching method and etching apparatus
WO2017134930A1 (ja) エッチング方法及びエッチング装置
JP6554418B2 (ja) タングステン膜の成膜方法および成膜装置
TWI664316B (zh) Dry etching method and etching device
JP2017069313A (ja) 半導体装置の製造方法、基板処理装置、ガス供給システムおよびプログラム
TWI838472B (zh) 乾式蝕刻方法、半導體裝置之製造方法及蝕刻裝置
JP6559107B2 (ja) 成膜方法および成膜システム
WO2015001991A1 (ja) 被処理体の処理方法
KR102382484B1 (ko) 에칭 방법 및 에칭 장치
TWI415217B (zh) A manufacturing method of a semiconductor device, a manufacturing apparatus for a semiconductor device, a computer program, and a memory medium
JP2010177382A (ja) 成膜方法及びプラズマ成膜装置
JP2011100962A (ja) 成膜方法及びプラズマ処理装置
WO2017010194A1 (ja) 自然酸化膜除去方法及び自然酸化膜除去装置
JP6854844B2 (ja) エッチング方法及びエッチング装置
CN112740364A (zh) 半导体装置的制造方法、基板处理装置和记录介质
TW202303722A (zh) 表面處理方法、乾式蝕刻方法、清潔方法、半導體裝置之製造方法及蝕刻裝置
CN117758231A (zh) 衬底处理方法、半导体器件的制造方法、衬底处理装置及记录介质