JP2019050337A - 窒化物半導体発光素子及び窒化物半導体発光素子の製造方法 - Google Patents
窒化物半導体発光素子及び窒化物半導体発光素子の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 57
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 54
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 238000000034 method Methods 0.000 title abstract description 7
- 230000004888 barrier function Effects 0.000 claims abstract description 115
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract 6
- 238000005253 cladding Methods 0.000 claims description 74
- 239000000758 substrate Substances 0.000 claims description 16
- 238000010030 laminating Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 319
- 230000000052 comparative effect Effects 0.000 description 11
- 230000000903 blocking effect Effects 0.000 description 9
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 229910002601 GaN Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical group [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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Abstract
Description
本発明の実施の形態について、図1から図3を参照して説明する。なお、以下に説明する実施の形態は、本発明を実施する上での好適な具体例として示すものであり、技術的に好ましい種々の技術的事項を具体的に例示している部分もあるが、本発明の技術的範囲は、この具体的態様に限定されるものではない。また、各図面における各構成要素の寸法比は、必ずしも実際の窒化物半導体発光素子の寸法比と一致するものではない。
以上説明したように、本発明の実施の形態に係る発光素子1では、第1〜第3の障壁層52のAl組成比が、第1の障壁層52a、第2の障壁層52b、及び第3の障壁層52cの順に増加するように構成された発光層50が設けられている。これにより、発光素子1の深紫外光の発光出力を上昇させることが可能となる。このようなAl組成比を有する障壁層52を設けることにより、従来の発光素子で生じていたピエゾ効果による電界を低減して、複数の井戸層間に生じる電子構造の不均一性を抑制することができたためと考えられる。
次に、以上説明した実施の形態から把握される技術思想について、実施の形態における符号等を援用して記載する。ただし、以下の記載における各符号等は、特許請求の範囲における構成要素を実施の形態に具体的に示した部材等に限定するものではない。
[2]前記n型クラッド層(30)の前記第1のAl組成比は、50%〜60%の間の値である、[1]に記載の窒化物半導体発光素子(1)。
[3]前記障壁層(52a、52b、52c)の前記第2のAl組成比は、80%以上の値である、[1]又は[2]に記載の窒化物半導体発光素子(1)。
[4]前記増加率は、1.1%〜2.7%の間の値である、[1]から[3]のいずれか1つのいずれか1項に記載の窒化物半導体発光素子。
[5]基板(10)上にn型AlGaNを有するn型クラッド層(30)を形成する工程と、前記n型クラッド層上に、第1のAl組成比よりも大きな第2のAl組成比を有するAlGaNを有する障壁層と前記第2のAl組成比より小さいAl組成比を有する複数の井戸層(54a,54b,54c)とをこの順に交互にN層ずつ積層してなる多重量子井戸層とを形成する工程とを備え、前記多重量子井戸層の前記複数の障壁層を形成する工程は、前記n型クラッド層側から前記クラッド層と反対側に向かってAl組成比が所定の増加率で増加するようにAlの供給量を増加させながら形成する、窒化物半導体発光素子の製造方法。
2…下地構造部
10…基板
20…バッファ層
22…AlN層
24…u−Al1−aGaaN層
30…n型クラッド層
30a…露出面
40…傾斜層
50…発光層
52,52a,52b,52c…障壁層
54,54a,54b,54c…井戸層
60…電子ブロック層
70…p型クラッド層
80…p型コンタクト層
90…n側電極
92…p側電極
GaNによって形成されたn型クラッド層と、前記第1のAl組成比よりも大きな第2の
Al組成比を有するAlGaNによって形成された複数の障壁層と前記第2のAl組成比
より小さいAl組成比を有する複数の井戸層とをこの順に交互にN層ずつ積層してなる多
重量子井戸層とを含む窒化物半導体発光素子であって、前記多重量子井戸層の前記複数の
障壁層の前記第2のAl組成比は、前記n型クラッド層側から前記n型クラッド層の反対
側に向かって増加する増加率で増加する窒化物半導体発光素子及び窒化物半導
体発光素子の製造方法を提供する。
[2]前記n型クラッド層(30)の前記第1のAl組成比は、50%〜60%の間の値である、[1]に記載の窒化物半導体発光素子(1)。
[3]前記障壁層(52a、52b、52c)の前記第2のAl組成比は、80%以上の値である、[1]又は[2]に記載の窒化物半導体発光素子(1)。
[4]前記増加率は、1.1%〜2.7%の間の値である、[1]から[3]のいずれか1つのいずれか1項に記載の窒化物半導体発光素子。
[5]前記n型クラッド層と前記多重量子井戸層との間に位置して、前記n型クラッド層側から前記多重量子井戸層側に向かって増加するAl組成比を有するAlGaNによって形成された傾斜層をさらに備える、前記[1]から[4]のいずれか1つに記載の窒化物半導体発光素子。
[6]基板(10)上にn型AlGaNを有するn型クラッド層(30)を形成する工程と、前記n型クラッド層上に、第1のAl組成比よりも大きな第2のAl組成比を有するAlGaNを有する障壁層と前記第2のAl組成比より小さいAl組成比を有する複数の井戸層(54a,54b,54c)とをこの順に交互にN層ずつ積層してなる多重量子井戸層とを形成する工程とを備え、前記多重量子井戸層の前記複数の障壁層を形成する工程は、前記n型クラッド層側から前記クラッド層と反対側に向かって増加する増加率で増加するようにAlの供給量を増加させながら形成する、窒化物半導体発光素子の製造方法。
[2]前記n型クラッド層(30)の前記第1のAl組成比は、50%〜60%の間の値である、[1]に記載の窒化物半導体発光素子(1)。
[3]前記障壁層(52a、52b、52c)の前記第2のAl組成比は、80%以上の値である、[1]又は[2]に記載の窒化物半導体発光素子(1)。
[4]前記増加率は、1.1%〜2.7%の間の値である、[1]から[3]のいずれか1つのいずれか1つに記載の窒化物半導体発光素子。
[5]前記n型クラッド層と前記多重量子井戸層との間に位置して、前記n型クラッド層側から前記多重量子井戸層側に向かって増加するAl組成比を有するAlGaNによって形成された傾斜層をさらに備える、前記[1]から[4]のいずれか1つに記載の窒化物半導体発光素子。
[6]基板(10)上にn型AlGaNを有するn型クラッド層(30)を形成する工程と、前記n型クラッド層上に、第1のAl組成比よりも大きな第2のAl組成比を有するAlGaNを有する障壁層と前記第2のAl組成比より小さいAl組成比を有する複数の井戸層(54a,54b,54c)とをこの順に交互にN層ずつ積層してなる多重量子井戸層とを形成する工程とを備え、前記多重量子井戸層の前記複数の障壁層を形成する工程は、前記n型クラッド層側から前記クラッド層と反対側に向かって増加する増加率で増加するようにAlの供給量を増加させながら形成する、250nm〜350nmの中心波長を有する深紫外光を発する窒化物半導体発光素子の製造方法。
Claims (5)
- 第1のAl組成比を有するn型AlGaNによって形成されたn型クラッド層と、
前記第1のAl組成比よりも大きな第2のAl組成比を有するAlGaNによって形成された複数の障壁層と前記第2のAl組成比より小さいAl組成比を有する複数の井戸層とをこの順に交互にN層ずつ積層してなる多重量子井戸層と
を含む窒化物半導体発光素子であって、
前記多重量子井戸層の前記複数の障壁層の前記第2のAl組成比は、前記n型クラッド層側から前記n型クラッド層の反対側に向かってAl組成比が所定の増加率で増加する、
窒化物半導体発光素子。 - 前記n型クラッド層の前記第1のAl組成比は、50%〜60%の間の値である、
請求項1に記載の窒化物半導体発光素子。 - 前記複数の障壁層の前記第2のAl組成比は、80%以上である、
請求項1又は2に記載の窒化物半導体発光素子。 - 前記増加率は、1.1%〜2.7%の間の値である、
請求項1から3のいずれか1項に記載の窒化物半導体発光素子。 - 基板上にn型AlGaNを有するn型クラッド層を形成する工程と、
第1のAl組成比よりも大きな第2のAl組成比を有するAlGaNを有する複数の障壁層と前記第2のAl組成比より小さいAl組成比を有する複数の井戸層とをこの順に交互にN層ずつ積層してなる多重量子井戸層とを形成する工程とを備え、
前記多重量子井戸層の前記複数の障壁層を形成する工程は、前記n型クラッド層側から前記n型クラッド層の反対側に向かってAl組成比が所定の増加率で増加するようにAlの供給量を増加させながら形成する、
窒化物半導体発光素子の製造方法。
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