JP2019024036A - 研磨装置および研磨方法 - Google Patents
研磨装置および研磨方法 Download PDFInfo
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- 238000005498 polishing Methods 0.000 title claims abstract description 158
- 238000000034 method Methods 0.000 title claims description 16
- 239000007788 liquid Substances 0.000 claims abstract description 74
- 238000003825 pressing Methods 0.000 claims abstract description 3
- 239000013307 optical fiber Substances 0.000 claims description 120
- 239000002002 slurry Substances 0.000 claims description 18
- 230000003595 spectral effect Effects 0.000 claims description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 239000000835 fiber Substances 0.000 abstract 2
- 239000010408 film Substances 0.000 description 58
- 239000007789 gas Substances 0.000 description 39
- 230000003287 optical effect Effects 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 238000001228 spectrum Methods 0.000 description 9
- 239000012788 optical film Substances 0.000 description 8
- 239000012530 fluid Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000012886 linear function Methods 0.000 description 1
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- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
- B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
- B24B37/107—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement in a rotary movement only, about an axis being stationary during lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
- B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0683—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating measurement during deposition or removal of the layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Disintegrating Or Milling (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
Abstract
【解決手段】研磨装置は、ウェハWを研磨パッドに押し付けるための研磨ヘッドと5、研磨テーブル3内の流路7内に配置された先端34aを有し、光源30に接続された投光ファイバー34と、ウェハWからの反射光を波長に従って分解して各波長での反射光の強度を測定する分光器26と、流路7内に配置された先端50aを有し、分光器26に接続された受光ファイバー50と、ウェハの膜厚を決定する処理部27と、流路7に連通する液体供給ライン62と、流路7に連通する気体供給ライン63と、液体供給ライン62に取り付けられた液体供給弁65と、気体供給ライン63に取り付けられた気体供給弁67と、液体供給弁65および気体供給弁67の動作を制御する動作制御部71を備える。
【選択図】図1
Description
本発明の好ましい態様は、前記流路内に配置された超音波振動子をさらに備えたことを特徴とする。
本発明の好ましい態様は、前記投光ファイバーの先端および前記受光ファイバーの先端がウェハの下にないときに前記気体を前記投光ファイバーの先端および前記受光ファイバーの先端に接触させ、前記投光ファイバーの先端および前記受光ファイバーの先端がウェハの下にあるときに前記液体を前記投光ファイバーの先端および前記受光ファイバーの先端に接触させることを特徴とする。
本発明の好ましい態様は、前記流路が液体で満たされているときに前記流路内に配置された超音波振動子を振動させることを特徴とする。
3 研磨テーブル
5 研磨ヘッド
7 流路
10 スラリー供給ノズル
12 研磨制御部
16 研磨ヘッドシャフト
19 テーブルモータ
25 光学式膜厚測定器(膜厚測定装置)
26 分光器
27 処理部
30 光源
34 投光ファイバー
50 受光ファイバー
56 ロータリジョイント
61 光センサ
62 液体供給ライン
63 気体供給ライン
65 液体供給弁
67 気体供給弁
71 動作制御部
73 流体排出ライン
80 超音波振動子
85 液体供給ライン
88 透明窓
Claims (7)
- 研磨パッドを支持するための研磨テーブルと、
ウェハを前記研磨パッドに押し付けるための研磨ヘッドと、
光を発する光源と、
前記研磨テーブル内の流路内に配置された先端を有し、前記光源に接続された投光ファイバーと、
ウェハからの反射光を波長に従って分解して各波長での反射光の強度を測定する分光器と、
前記流路内に配置された先端を有し、前記分光器に接続された受光ファイバーと、
前記反射光の強度と波長との関係を示す分光波形に基づいてウェハの膜厚を決定する処理部と、
前記流路に連通する液体供給ラインと、
前記流路に連通する気体供給ラインと、
前記液体供給ラインに取り付けられた液体供給弁と、
前記気体供給ラインに取り付けられた気体供給弁と、
前記液体供給弁および前記気体供給弁の動作を制御する動作制御部を備えたことを特徴とする研磨装置。 - 前記流路内に配置された超音波振動子をさらに備えたことを特徴とする請求項1に記載の研磨装置。
- 研磨パッドを支持する研磨テーブルを回転させ、
スラリーを前記研磨パッド上に供給しながら、前記研磨パッドにウェハを押し付けて該ウェハを研磨し、
前記ウェハの研磨中に、投光ファイバーから前記ウェハに光を導き、前記ウェハからの反射光を受光ファイバーで受け、前記投光ファイバーの先端および前記受光ファイバーの先端は前記研磨テーブル内の流路内にあり、
前記反射光の強度と波長との関係を示す分光波形に基づいてウェハの膜厚を決定し、
前記ウェハの研磨中に、液体および気体を交互に前記投光ファイバーの先端および前記受光ファイバーの先端に接触させることを特徴とする研磨方法。 - 前記投光ファイバーの先端および前記受光ファイバーの先端がウェハの下にあるときに前記気体を前記投光ファイバーの先端および前記受光ファイバーの先端に接触させ、
前記投光ファイバーの先端および前記受光ファイバーの先端がウェハの下にないときに前記液体を前記投光ファイバーの先端および前記受光ファイバーの先端に接触させることを特徴とする請求項3に記載の研磨方法。 - 前記投光ファイバーの先端および前記受光ファイバーの先端がウェハの下にないときに前記気体を前記投光ファイバーの先端および前記受光ファイバーの先端に接触させ、
前記投光ファイバーの先端および前記受光ファイバーの先端がウェハの下にあるときに前記液体を前記投光ファイバーの先端および前記受光ファイバーの先端に接触させることを特徴とする請求項3に記載の研磨方法。 - 前記流路が液体で満たされているときに前記流路内に配置された超音波振動子を振動させることを特徴とする請求項3乃至5のいずれか一項に記載の研磨方法。
- 研磨パッドを支持する研磨テーブルを回転させ、
スラリーを前記研磨パッド上に供給しながら、前記研磨パッドにウェハを押し付けて該ウェハを研磨し、
前記ウェハの研磨中に、投光ファイバーから前記ウェハに光を導き、前記ウェハからの反射光を受光ファイバーで受け、前記投光ファイバーの先端および前記受光ファイバーの先端は前記研磨テーブル内の流路内にあり、
前記反射光の強度と波長との関係を示す分光波形に基づいてウェハの膜厚を決定し、
前記ウェハの研磨中に、水よりも高い屈折率を持つ液体を前記受光ファイバーの先端に接触させることを特徴とする研磨方法。
Priority Applications (10)
Application Number | Priority Date | Filing Date | Title |
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JP2017142578A JP6948868B2 (ja) | 2017-07-24 | 2017-07-24 | 研磨装置および研磨方法 |
SG10201806039QA SG10201806039QA (en) | 2017-07-24 | 2018-07-13 | Polishing apparatus and polishing method |
SG10202101299QA SG10202101299QA (en) | 2017-07-24 | 2018-07-13 | Polishing apparatus and polishing method |
TW111144496A TW202313252A (zh) | 2017-07-24 | 2018-07-16 | 研磨方法 |
TW107124475A TWI788383B (zh) | 2017-07-24 | 2018-07-16 | 研磨裝置及研磨方法 |
US16/039,065 US11911867B2 (en) | 2017-07-24 | 2018-07-18 | Polishing apparatus and polishing method |
CN202210133260.0A CN114434314A (zh) | 2017-07-24 | 2018-07-19 | 研磨方法 |
CN201810796740.9A CN109290940B (zh) | 2017-07-24 | 2018-07-19 | 研磨装置及研磨方法 |
KR1020180083850A KR102549750B1 (ko) | 2017-07-24 | 2018-07-19 | 연마 장치 및 연마 방법 |
JP2021153009A JP2022002870A (ja) | 2017-07-24 | 2021-09-21 | 研磨方法 |
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JP2021030408A (ja) * | 2019-08-29 | 2021-03-01 | 株式会社荏原製作所 | 研磨装置および研磨方法 |
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CN110695840B (zh) * | 2019-11-07 | 2021-02-02 | 许昌学院 | 一种基于光电检测的半导体研磨装置 |
JP2022061077A (ja) * | 2020-10-06 | 2022-04-18 | 株式会社荏原製作所 | 光学式膜厚測定装置および研磨装置 |
US20230011748A1 (en) * | 2021-07-12 | 2023-01-12 | Applied Materials, Inc. | System and method to map thickness variations of substrates inmanufacturing systems |
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JP2005288572A (ja) * | 2004-03-31 | 2005-10-20 | Ebara Corp | 水切り機構を有するオーバーハング方式CMPin−situモニター装置 |
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TW202313252A (zh) | 2023-04-01 |
JP2022002870A (ja) | 2022-01-11 |
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CN114434314A (zh) | 2022-05-06 |
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