JP2019009200A - 剥離装置 - Google Patents
剥離装置 Download PDFInfo
- Publication number
- JP2019009200A JP2019009200A JP2017121797A JP2017121797A JP2019009200A JP 2019009200 A JP2019009200 A JP 2019009200A JP 2017121797 A JP2017121797 A JP 2017121797A JP 2017121797 A JP2017121797 A JP 2017121797A JP 2019009200 A JP2019009200 A JP 2019009200A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- peeling
- protective member
- gripping
- outer peripheral
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 206010040844 Skin exfoliation Diseases 0.000 claims abstract description 224
- 230000001681 protective effect Effects 0.000 claims abstract description 103
- 230000002093 peripheral effect Effects 0.000 claims abstract description 93
- 239000011347 resin Substances 0.000 claims abstract description 45
- 229920005989 resin Polymers 0.000 claims abstract description 45
- 238000003825 pressing Methods 0.000 claims abstract description 5
- 235000012431 wafers Nutrition 0.000 description 146
- 238000000034 method Methods 0.000 description 42
- 230000008569 process Effects 0.000 description 36
- 239000010813 municipal solid waste Substances 0.000 description 21
- 230000004048 modification Effects 0.000 description 14
- 238000012986 modification Methods 0.000 description 14
- 239000000758 substrate Substances 0.000 description 10
- 230000032258 transport Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 238000000227 grinding Methods 0.000 description 7
- 239000007788 liquid Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 230000003028 elevating effect Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 210000000078 claw Anatomy 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000001960 triggered effect Effects 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
P 保護部材
R 樹脂
F フィルム
E はみ出し部
1 剥離装置
2 保持手段
21 保持面
4 外周剥離手段
42 把持手段(第1の外周剥離手段、第2の外周剥離手段)
43 把持部(第2の把持部)
44 水平移動部
G1 第1の剥離グループ(第1の外周剥離手段)
G2 第2の剥離グループ(第2の外周剥離手段)
5 全体剥離手段
50 把持部(第1の把持部)
51 移動手段
52b ローラ部(ローラ)
Claims (3)
- フィルムがウエーハの外周縁からはみ出したはみ出し部を形成した状態で樹脂を介して該フィルムをウエーハの一方の面に固着して該樹脂と該フィルムとからなる保護部材をウエーハから剥離する剥離装置であって、
該保護部材を下にして上面となるウエーハの他方の面を吸引保持する保持面を有する保持手段と、
該はみ出し部を把持し外周の一部分を残して該保護部材の外周部分をウエーハから剥離する外周剥離手段と、
残った該外周の一部分の該はみ出し部を把持し該保護部材の外周部分側から該保護部材全体をウエーハから剥離する全体剥離手段と、を備え、
該全体剥離手段は、
該外周剥離手段で剥離されないで残った該外周の一部分の該はみ出し部を把持する第1の把持部と、
該外周剥離手段で剥離されないでウエーハに固着されている該保護部材の中央部分を押圧するローラと、
該第1の把持部と該保持手段とを相対的に保持面方向に移動させる移動手段と、を備え、
該ローラで該保持手段が保持したウエーハの中央部分の該保護部材をウエーハに向かって押し付けながら該保護部材をウエーハから全て剥離する剥離装置。 - 該外周剥離手段は、
ウエーハの中心を中心として所定の角度間隔で配設される複数の第1の外周剥離手段と、
該第1の外周剥離手段の間に配設される複数の第2の外周剥離手段とを備え、
該第1の外周剥離手段と該第2の外周剥離手段とは、
該はみ出し部を把持する第2の把持部と、
該第2の把持部を該保持面方向でウエーハの外周より遠ざかる方向に移動させる水平移動部と、
該水平移動部により移動した該第2の把持部を該保持面に対して直交する垂直方向で下降させる下降部とを備えた請求項1記載の剥離装置。 - 該外周剥離手段は、
該はみ出し部を把持する第2の把持部と、
該第2の把持部を該保持面方向でウエーハの外周より遠ざかる方向に移動させる水平移動部と、
該水平移動部により移動した該第2の把持部を該保持面に対して直交する垂直方向に移動させる下降部と、
該第2の把持部と、該水平移動部と、該下降部とを、ウエーハの中心を軸とする回転軸によってウエーハの外周に沿って回転移動させる外周移動手段と、を備えた請求項1記載の剥離装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017121797A JP6924625B2 (ja) | 2017-06-22 | 2017-06-22 | 剥離装置 |
TW107115379A TWI793123B (zh) | 2017-06-22 | 2018-05-07 | 剝離裝置 |
CN201810587323.3A CN109119371B (zh) | 2017-06-22 | 2018-06-08 | 剥离装置 |
KR1020180068042A KR102475683B1 (ko) | 2017-06-22 | 2018-06-14 | 박리 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017121797A JP6924625B2 (ja) | 2017-06-22 | 2017-06-22 | 剥離装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019009200A true JP2019009200A (ja) | 2019-01-17 |
JP6924625B2 JP6924625B2 (ja) | 2021-08-25 |
Family
ID=64821857
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017121797A Active JP6924625B2 (ja) | 2017-06-22 | 2017-06-22 | 剥離装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6924625B2 (ja) |
KR (1) | KR102475683B1 (ja) |
CN (1) | CN109119371B (ja) |
TW (1) | TWI793123B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7488148B2 (ja) | 2020-08-03 | 2024-05-21 | 株式会社ディスコ | 剥離装置 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102454601B1 (ko) * | 2019-06-28 | 2022-10-17 | 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 | 박리 파지 장치, 박리 검사 장치 및 초음파 진동 접합 시스템 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012151275A (ja) * | 2011-01-19 | 2012-08-09 | Disco Abrasive Syst Ltd | 樹脂剥がし装置および研削加工装置 |
JP2013149655A (ja) * | 2012-01-17 | 2013-08-01 | Tokyo Electron Ltd | 剥離装置、剥離システム、剥離方法および剥離プログラム |
JP2014063882A (ja) * | 2012-09-21 | 2014-04-10 | Disco Abrasive Syst Ltd | 樹脂剥がし方法及び樹脂剥がし装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014067873A (ja) * | 2012-09-26 | 2014-04-17 | Nitto Denko Corp | 保護テープ剥離方法および保護テープ剥離装置 |
JP6730879B2 (ja) * | 2016-08-18 | 2020-07-29 | 株式会社ディスコ | 剥離方法及び剥離装置 |
-
2017
- 2017-06-22 JP JP2017121797A patent/JP6924625B2/ja active Active
-
2018
- 2018-05-07 TW TW107115379A patent/TWI793123B/zh active
- 2018-06-08 CN CN201810587323.3A patent/CN109119371B/zh active Active
- 2018-06-14 KR KR1020180068042A patent/KR102475683B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012151275A (ja) * | 2011-01-19 | 2012-08-09 | Disco Abrasive Syst Ltd | 樹脂剥がし装置および研削加工装置 |
JP2013149655A (ja) * | 2012-01-17 | 2013-08-01 | Tokyo Electron Ltd | 剥離装置、剥離システム、剥離方法および剥離プログラム |
JP2014063882A (ja) * | 2012-09-21 | 2014-04-10 | Disco Abrasive Syst Ltd | 樹脂剥がし方法及び樹脂剥がし装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7488148B2 (ja) | 2020-08-03 | 2024-05-21 | 株式会社ディスコ | 剥離装置 |
Also Published As
Publication number | Publication date |
---|---|
JP6924625B2 (ja) | 2021-08-25 |
CN109119371B (zh) | 2024-02-02 |
TWI793123B (zh) | 2023-02-21 |
KR20190000296A (ko) | 2019-01-02 |
CN109119371A (zh) | 2019-01-01 |
TW201906060A (zh) | 2019-02-01 |
KR102475683B1 (ko) | 2022-12-07 |
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