JP2018535543A - シリコンオンインシュレータ基板を備えた埋め込みメモリデバイスを製造する方法 - Google Patents
シリコンオンインシュレータ基板を備えた埋め込みメモリデバイスを製造する方法 Download PDFInfo
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- 239000010703 silicon Substances 0.000 claims abstract description 78
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- 238000000034 method Methods 0.000 claims abstract description 34
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Abstract
Description
本願は、2015年10月7日付けで出願され、参照により本書に組み込まれた米国仮出願第62/238,638号の優先権を主張する。
Claims (8)
- 半導体デバイスを形成する方法であって、
シリコンと前記シリコンの直ぐ上方にある第1の絶縁層と前記第1の絶縁層の直ぐ上方にあるシリコン層とを含む基板を準備する工程と、
前記シリコン層が前記基板の第2のエリアと比べて前記基板の第1のエリア内で厚くなるように、前記基板の前記第2のエリア内ではなく前記基板の前記第1のエリア内の前記シリコン層上でシリコンをエピタキシャル成長させる工程と、
前記基板の前記第1のエリアにメモリセルを形成する工程であって、前記メモリセルを1つずつ形成する工程が、
前記基板の前記第1のエリア内の前記シリコン層に相隔たった第1のソース領域及び第1のドレイン領域を形成する工程と、
前記チャネル領域の第1の部分の上方にそれとは絶縁された浮遊ゲートを形成する工程と、
前記チャネル領域の第2の部分の上方にそれとは絶縁された選択ゲートを形成する工程とを含む、前記基板の前記第1のエリアに前記メモリセルを形成する工程と、
前記基板の前記第2のエリアに論理デバイスを形成する工程であって、前記論理デバイスを1つずつ形成する工程は、
前記基板の前記第2のエリア内の前記シリコン層に相隔たった第2のソース領域及び第2のドレイン領域を形成する工程と、
前記第2のソース領域と前記第2のドレイン領域との間にある前記シリコン層の一部分の上方にそれとは絶縁された導電性ゲートを形成する工程とを含む、前記基板の前記第2のエリアに前記論理デバイスを形成する工程と、
を含む半導体デバイスを形成する方法。 - 前記第1のソース領域及び前記第1のドレイン領域は、前記第2のソース領域及び前記第2のドレイン領域が広がるより深く前記シリコン層の中へ広がる、請求項1に記載の方法。
- 前記第1のソース領域及び第2のドレイン領域はそれぞれ、前記第2のソース領域及び前記第2のドレイン領域のそれぞれの破壊電圧より大きな破壊電圧を有する、請求項1に記載の方法。
- 前記メモリセルのそれぞれを形成する前記工程が、
前記浮遊ゲートの上方にそれとは絶縁された制御ゲートを形成する工程と、
前記第1のソース領域の上方にそれとは絶縁された消去ゲートを形成する工程と、を更に含む、
請求項1に記載の方法。 - 前記導電性ゲート、前記選択ゲート及び前記消去ゲートを形成する前記工程が、
前記基板の前記第1のエリア及び前記第2のエリアに沿って広がるポリシリコン層を形成する工程と、
前記基板の前記第1のエリア内の前記ポリシリコン層の残りの部分が前記選択ゲート及び前記消去ゲートを構成し、前記基板の前記第2のエリア内の前記ポリシリコン層の残りの部分が前記導電性ゲートを構成するように、前記ポリシリコン層の一部分を選択的に除去する工程と、
を更に含む、請求項4に記載の方法。 - 前記エピタキシャル成長させる工程が、
前記基板の前記第1のエリア及び前記第2のエリア内の前記シリコン層の上方に第2の絶縁層を形成する工程と、
前記基板の前記第2のエリア内の前記第2の絶縁層を維持したまま前記基板の前記第1のエリアから前記第2の絶縁層を除去する工程と、
前記基板の前記第2のエリア内の前記シリコン層上ではなく、前記基板の前記第1のエリア内の前記シリコン層上の前記シリコンを成長させるエピタキシャル成長プロセスを行う工程
と、
前記基板の前記第2のエリアから前記第2の絶縁層を除去する工程と、
を更に含む、請求項1に記載の方法。 - 前記エピタキシャル成長させる工程が、
前記基板の前記第1のエリア及び前記第2のエリア内の前記シリコン層の直ぐ上に第2の絶縁層を形成する工程と、
前記基板の前記第1のエリア及び前記第2のエリア内の前記第2の絶縁層の直ぐ上に第3の絶縁層を形成する工程と、
前記基板の前記第1のエリア及び前記第2のエリアにおいて、前記第3の絶縁層、前記第2の絶縁層、前記シリコン層、前記第1の絶縁層を介して前記シリコンの中へそれぞれ広がるトレンチを形成する工程と、
絶縁体を前記トレンチに少なくとも部分的に充填する工程と、
前記基板の前記第1のエリア及び前記第2のエリアから前記第3の絶縁層を除去する工程と、
前記基板の前記第1のエリア及び前記第2のエリア内の前記第2の絶縁層の上方に第4の絶縁層を形成する工程と、
前記基板の前記第2のエリア内の前記第4の絶縁層を維持したまま前記基板の前記第1のエリアから前記第4の絶縁層を除去する工程と、
前記基板の前記第1のエリアから前記第2の絶縁層を除去する工程と、
前記基板の前記第2のエリア内の前記シリコン層上ではなく、前記基板の前記第1のエリア内の前記シリコン層上の前記シリコンを成長させるエピタキシャル成長プロセスを行う工程
と、
前記基板の前記第2のエリアから前記第4の絶縁層を除去する工程と、
を更に含む、請求項1に記載の方法。 - 前記トレンチを形成する工程が、
前記第2の絶縁層の場所ではなく前記第3の絶縁層の場所で前記トレンチを広げるために等方性エッチングを行う工程を更に含む、請求項7に記載の方法。
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