JP2018534863A5 - - Google Patents

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Publication number
JP2018534863A5
JP2018534863A5 JP2018520188A JP2018520188A JP2018534863A5 JP 2018534863 A5 JP2018534863 A5 JP 2018534863A5 JP 2018520188 A JP2018520188 A JP 2018520188A JP 2018520188 A JP2018520188 A JP 2018520188A JP 2018534863 A5 JP2018534863 A5 JP 2018534863A5
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JP
Japan
Prior art keywords
thickness
hybrid structure
support substrate
manufacturing
substrate
Prior art date
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Application number
JP2018520188A
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English (en)
Japanese (ja)
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JP6985260B2 (ja
JP2018534863A (ja
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Publication date
Priority claimed from FR1559993A external-priority patent/FR3042649B1/fr
Application filed filed Critical
Publication of JP2018534863A publication Critical patent/JP2018534863A/ja
Publication of JP2018534863A5 publication Critical patent/JP2018534863A5/ja
Priority to JP2021191041A priority Critical patent/JP2022043057A/ja
Application granted granted Critical
Publication of JP6985260B2 publication Critical patent/JP6985260B2/ja
Priority to JP2023213109A priority patent/JP7668864B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2018520188A 2015-10-20 2016-10-17 ハイブリッド構造を製造するための方法 Active JP6985260B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2021191041A JP2022043057A (ja) 2015-10-20 2021-11-25 ハイブリッド構造
JP2023213109A JP7668864B2 (ja) 2015-10-20 2023-12-18 ハイブリッド構造

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1559993A FR3042649B1 (fr) 2015-10-20 2015-10-20 Procede de fabrication d'une structure hybride
FR1559993 2015-10-20
PCT/FR2016/052674 WO2017068269A1 (fr) 2015-10-20 2016-10-17 Procédé de fabrication d'une structure hybride

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2021191041A Division JP2022043057A (ja) 2015-10-20 2021-11-25 ハイブリッド構造

Publications (3)

Publication Number Publication Date
JP2018534863A JP2018534863A (ja) 2018-11-22
JP2018534863A5 true JP2018534863A5 (enExample) 2019-11-28
JP6985260B2 JP6985260B2 (ja) 2021-12-22

Family

ID=54848787

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2018520188A Active JP6985260B2 (ja) 2015-10-20 2016-10-17 ハイブリッド構造を製造するための方法
JP2021191041A Pending JP2022043057A (ja) 2015-10-20 2021-11-25 ハイブリッド構造
JP2023213109A Active JP7668864B2 (ja) 2015-10-20 2023-12-18 ハイブリッド構造

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2021191041A Pending JP2022043057A (ja) 2015-10-20 2021-11-25 ハイブリッド構造
JP2023213109A Active JP7668864B2 (ja) 2015-10-20 2023-12-18 ハイブリッド構造

Country Status (8)

Country Link
US (3) US11349065B2 (enExample)
EP (1) EP3365929B1 (enExample)
JP (3) JP6985260B2 (enExample)
KR (1) KR102639433B1 (enExample)
CN (1) CN108292699B (enExample)
FR (1) FR3042649B1 (enExample)
SG (1) SG11201803333RA (enExample)
WO (1) WO2017068269A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3042649B1 (fr) 2015-10-20 2019-06-21 Soitec Procede de fabrication d'une structure hybride
JP7103528B2 (ja) * 2019-09-27 2022-07-20 株式会社村田製作所 弾性波装置

Family Cites Families (31)

* Cited by examiner, † Cited by third party
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JP2848116B2 (ja) * 1992-05-26 1999-01-20 松下電器産業株式会社 水晶素板の加工方法
US5759753A (en) * 1995-07-19 1998-06-02 Matsushita Electric Industrial Co., Ltd. Piezoelectric device and method of manufacturing the same
FR2816445B1 (fr) * 2000-11-06 2003-07-25 Commissariat Energie Atomique Procede de fabrication d'une structure empilee comprenant une couche mince adherant a un substrat cible
US20020158947A1 (en) * 2001-04-27 2002-10-31 Isaku Kanno Piezoelectric element, method for manufacturing piezoelectric element, and ink jet head and ink jet recording apparatus having piezoelectric element
JP2004186868A (ja) * 2002-12-02 2004-07-02 Fujitsu Media Device Kk 弾性表面波素子、それを有する送信フィルタ及び受信フィルタ、並びにそれらを有するデュプレクサ
FR2858461B1 (fr) * 2003-07-30 2005-11-04 Soitec Silicon On Insulator Realisation d'une structure comprenant une couche protegeant contre des traitements chimiques
US7601271B2 (en) * 2005-11-28 2009-10-13 S.O.I.Tec Silicon On Insulator Technologies Process and equipment for bonding by molecular adhesion
US20080203137A1 (en) * 2007-02-28 2008-08-28 International Business Machines Corporation Substrate bonding methods and system including monitoring
FR2926671B1 (fr) * 2008-01-17 2010-04-02 Soitec Silicon On Insulator Procede de traitement de defauts lors de collage de plaques
JP4821834B2 (ja) * 2008-10-31 2011-11-24 株式会社村田製作所 圧電性複合基板の製造方法
FR2938702B1 (fr) * 2008-11-19 2011-03-04 Soitec Silicon On Insulator Preparation de surface d'un substrat saphir pour la realisation d'heterostructures
DE112010002512B4 (de) 2009-03-27 2024-03-14 Rigaku Corp. Röntgenstrahlerzeugungsvorrichtung und Untersuchungsvorrichtung, die diese verwendet
JP5359615B2 (ja) * 2009-07-02 2013-12-04 株式会社村田製作所 複合基板の製造方法
FR2949606B1 (fr) * 2009-08-26 2011-10-28 Commissariat Energie Atomique Procede de detachement par fracture d'un film mince de silicium mettant en oeuvre une triple implantation
JP5678092B2 (ja) * 2009-12-15 2015-02-25 ソイテック 基板を再利用する方法
FR2954585B1 (fr) * 2009-12-23 2012-03-02 Soitec Silicon Insulator Technologies Procede de realisation d'une heterostructure avec minimisation de contrainte
WO2011139852A2 (en) * 2010-04-29 2011-11-10 Skyline Solar, Inc. Thin film coating pinning arrangement
KR101534654B1 (ko) 2010-12-24 2015-07-07 가부시키가이샤 무라타 세이사쿠쇼 탄성파 장치 및 그 제조 방법
JP5796316B2 (ja) * 2011-03-22 2015-10-21 株式会社村田製作所 圧電デバイスの製造方法
KR20150013234A (ko) * 2012-06-13 2015-02-04 엔지케이 인슐레이터 엘티디 복합 기판
JP5833239B2 (ja) 2012-07-12 2015-12-16 日本碍子株式会社 複合基板、圧電デバイス及び複合基板の製法
CN103765773B (zh) * 2012-08-17 2015-11-25 日本碍子株式会社 复合基板、弹性表面波器件以及复合基板的制造方法
EP2787638B1 (en) * 2012-11-14 2016-03-30 NGK Insulators, Ltd. Composite substrate
JP2014147054A (ja) 2013-01-30 2014-08-14 Sumitomo Electric Ind Ltd 圧電基板及び弾性表面波素子
JPWO2014129433A1 (ja) * 2013-02-19 2017-02-02 日本碍子株式会社 複合基板及び半導体デバイスの製法
EP2833550B1 (en) * 2013-03-27 2017-05-10 NGK Insulators, Ltd. Composite substrate and elastic wave device
DE112014003430B4 (de) * 2013-07-25 2025-10-16 Ngk Ceramic Device Co.,Ltd., Kompositsubstrat und Verfahren zum Herstellen desselben
JP2015073082A (ja) * 2013-09-03 2015-04-16 住友電気工業株式会社 積層体の設計方法
US10103317B2 (en) * 2015-01-05 2018-10-16 Inston, Inc. Systems and methods for implementing efficient magnetoelectric junctions
FR3042649B1 (fr) * 2015-10-20 2019-06-21 Soitec Procede de fabrication d'une structure hybride
EP3196952B1 (en) * 2016-01-21 2019-06-19 AT & S Austria Technologie & Systemtechnik Aktiengesellschaft Mems piezoelectric transducer formed at a pcb support structure

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