JP2012513684A5 - - Google Patents
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- Publication number
- JP2012513684A5 JP2012513684A5 JP2011542832A JP2011542832A JP2012513684A5 JP 2012513684 A5 JP2012513684 A5 JP 2012513684A5 JP 2011542832 A JP2011542832 A JP 2011542832A JP 2011542832 A JP2011542832 A JP 2011542832A JP 2012513684 A5 JP2012513684 A5 JP 2012513684A5
- Authority
- JP
- Japan
- Prior art keywords
- separation
- carrier
- layer
- wafer
- layered structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000926 separation method Methods 0.000 claims description 116
- 238000000034 method Methods 0.000 claims description 32
- 229920000642 polymer Polymers 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 229920001971 elastomer Polymers 0.000 claims description 6
- 239000000806 elastomer Substances 0.000 claims description 6
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 claims description 3
- 229920005372 Plexiglas® Polymers 0.000 claims description 3
- 238000007786 electrostatic charging Methods 0.000 claims description 2
- 239000013536 elastomeric material Substances 0.000 claims 4
- 238000010438 heat treatment Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 33
- 239000011521 glass Substances 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910017115 AlSb Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- -1 InN Chemical compound 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000001464 adherent effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102008055155.4 | 2008-12-23 | ||
| DE102008055155A DE102008055155A1 (de) | 2008-12-23 | 2008-12-23 | Trennverfahren für ein Schichtsystem umfassend einen Wafer |
| EP09151661A EP2202788A3 (de) | 2008-12-23 | 2009-01-29 | Trennverfahren für ein Schichtsystem umfassend einen Wafer |
| EP09151661.7 | 2009-01-29 | ||
| PCT/EP2009/067893 WO2010072826A2 (de) | 2008-12-23 | 2009-12-23 | Trennverfahren für ein schichtsystem umfassend einen wafer |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012513684A JP2012513684A (ja) | 2012-06-14 |
| JP2012513684A5 true JP2012513684A5 (enExample) | 2015-03-19 |
| JP5727382B2 JP5727382B2 (ja) | 2015-06-03 |
Family
ID=42097506
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011542832A Active JP5727382B2 (ja) | 2008-12-23 | 2009-12-23 | ウェーハを含む層システムを分離する方法 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US8951886B2 (enExample) |
| EP (2) | EP2202788A3 (enExample) |
| JP (1) | JP5727382B2 (enExample) |
| KR (1) | KR101754327B1 (enExample) |
| CN (1) | CN102326245B (enExample) |
| DE (1) | DE102008055155A1 (enExample) |
| PT (1) | PT2382656T (enExample) |
| SG (1) | SG172283A1 (enExample) |
| WO (1) | WO2010072826A2 (enExample) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8858756B2 (en) * | 2011-10-31 | 2014-10-14 | Masahiro Lee | Ultrathin wafer debonding systems |
| TWI428243B (zh) * | 2011-12-23 | 2014-03-01 | Ind Tech Res Inst | 可撓式元件的取下方法 |
| US8834662B2 (en) | 2012-03-22 | 2014-09-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method of separating wafer from carrier |
| US9269623B2 (en) | 2012-10-25 | 2016-02-23 | Rohm And Haas Electronic Materials Llc | Ephemeral bonding |
| KR102075635B1 (ko) | 2013-01-03 | 2020-03-02 | 삼성전자주식회사 | 웨이퍼 지지 구조물, 웨이퍼 지지 구조물을 포함하는 반도체 패키지의 중간 구조물, 및 중간 구조물을 이용한 반도체 패키지의 제조 방법 |
| CN103972133B (zh) * | 2013-01-25 | 2017-08-25 | 旭硝子株式会社 | 基板的剥离装置和剥离方法以及电子器件的制造方法 |
| JP6180811B2 (ja) * | 2013-06-19 | 2017-08-16 | 株式会社荏原製作所 | 基板処理装置 |
| KR20150011072A (ko) | 2013-07-22 | 2015-01-30 | 삼성전자주식회사 | 임시 접착제 조성물 및 이를 이용한 반도체 소자의 제조 방법 |
| US10103048B2 (en) * | 2013-08-28 | 2018-10-16 | Brewer Science, Inc. | Dual-layer bonding material process for temporary bonding of microelectronic substrates to carrier substrates |
| US9315696B2 (en) | 2013-10-31 | 2016-04-19 | Dow Global Technologies Llc | Ephemeral bonding |
| US9761474B2 (en) | 2013-12-19 | 2017-09-12 | Micron Technology, Inc. | Methods for processing semiconductor devices |
| WO2015190438A1 (ja) | 2014-06-10 | 2015-12-17 | 日産化学工業株式会社 | 仮接着剤を用いた積層体 |
| DE102014219095A1 (de) | 2014-09-22 | 2016-03-24 | Nissan Chemical Industries, Ltd. | Wafer-Träger-Anordnung |
| US9644118B2 (en) | 2015-03-03 | 2017-05-09 | Dow Global Technologies Llc | Method of releasably attaching a semiconductor substrate to a carrier |
| TW201705244A (zh) * | 2015-03-04 | 2017-02-01 | 康寧公司 | 用於控制並啓動基材自載體脫結之方法與設備 |
| CN105607311B (zh) * | 2016-01-04 | 2020-06-02 | 京东方科技集团股份有限公司 | 起角装置及其使用方法 |
| US10445253B2 (en) * | 2016-04-20 | 2019-10-15 | International Business Machines Corporation | Cost effective service level agreement data management |
| EP3477685A4 (en) | 2016-06-22 | 2020-07-01 | Nissan Chemical Corporation | POLYDIMETHYLSILOXANE ADHESIVE |
| KR102718731B1 (ko) | 2017-05-24 | 2024-10-18 | 닛산 가가쿠 가부시키가이샤 | 에폭시변성 폴리실록산을 함유하는 가접착제 |
| WO2019009365A1 (ja) | 2017-07-06 | 2019-01-10 | 日産化学株式会社 | フェニル基含有ポリシロキサンを含有する仮接着剤 |
| US10249567B2 (en) | 2017-08-18 | 2019-04-02 | Industrial Technology Research Institute | Redistribution layer structure of semiconductor package |
| US10622326B2 (en) | 2017-08-18 | 2020-04-14 | Industrial Technology Research Institute | Chip package structure |
| US10763135B2 (en) * | 2018-01-30 | 2020-09-01 | Facebook Technologies, Llc | Integrated elastomeric interface layer formation and singulation for light emitting diodes |
| JP7424969B2 (ja) | 2018-05-01 | 2024-01-30 | 日産化学株式会社 | 耐熱性重合禁止剤を含むポリシロキサンを含有する仮接着剤 |
| US10636829B1 (en) | 2018-10-24 | 2020-04-28 | Himax Technologies Limited | Wafer-level optical structure |
| TW202428830A (zh) | 2018-11-16 | 2024-07-16 | 日商日產化學股份有限公司 | 紅外線剝離用接著劑組成物、積層體、積層體之製造方法及剝離方法 |
| EP3882954A4 (en) | 2018-11-16 | 2022-07-27 | Nissan Chemical Corporation | LAMINATE REMOVAL METHOD, LAMINATE, AND LAMINATE PRODUCTION METHOD |
| EP3888909A4 (en) | 2018-11-28 | 2022-08-24 | Nissan Chemical Corporation | ADHESIVE COMPOSITION, LAYERING PRODUCT AND METHOD OF MANUFACTURING A LAYERING PRODUCT AND METHOD OF THICKNESSING A SEMICONDUCTOR SUBSTRATE |
| WO2023182138A1 (ja) | 2022-03-24 | 2023-09-28 | 日産化学株式会社 | ポリエーテル変性シロキサンを含有する接着剤 |
| CN115302938B (zh) * | 2022-08-25 | 2023-12-08 | 中国科学院上海硅酸盐研究所 | 一种分离胶合组件的方法 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06252149A (ja) * | 1993-02-25 | 1994-09-09 | Nitto Denko Corp | バンプ形成用複合フィルムおよびそれを用いた転写バンプ形成方法 |
| JPH06268051A (ja) * | 1993-03-10 | 1994-09-22 | Mitsubishi Electric Corp | ウエハ剥し装置 |
| US6342434B1 (en) | 1995-12-04 | 2002-01-29 | Hitachi, Ltd. | Methods of processing semiconductor wafer, and producing IC card, and carrier |
| CN1243327A (zh) * | 1998-07-27 | 2000-02-02 | 佳能株式会社 | 样品加工装置和方法 |
| JP2001015721A (ja) * | 1999-04-30 | 2001-01-19 | Canon Inc | 複合部材の分離方法及び薄膜の製造方法 |
| JP2001089291A (ja) * | 1999-09-20 | 2001-04-03 | Canon Inc | 液相成長法、半導体部材の製造方法、太陽電池の製造方法 |
| DE10128923A1 (de) * | 2001-06-15 | 2003-01-23 | Philips Corp Intellectual Pty | Verfahren zum Umsetzen eines im wesentlichen scheibenförmigen Werkstücks und Vorrichtung zur Durchführung dieses Verfahrens |
| DE10128924A1 (de) * | 2001-06-15 | 2003-01-23 | Philips Corp Intellectual Pty | Verfahren zum Umsetzen eines im wesentlichen scheibenförmigen Werkstücks sowie Vorrichtung zum Durchführen dieses Verfahrens |
| JP3892703B2 (ja) * | 2001-10-19 | 2007-03-14 | 富士通株式会社 | 半導体基板用治具及びこれを用いた半導体装置の製造方法 |
| JP3948930B2 (ja) * | 2001-10-31 | 2007-07-25 | 大日本スクリーン製造株式会社 | 薄膜形成装置および薄膜形成方法 |
| JP4215998B2 (ja) * | 2002-04-30 | 2009-01-28 | リンテック株式会社 | 半導体ウエハの処理方法およびそのための半導体ウエハの転写装置 |
| JP2004063645A (ja) * | 2002-07-26 | 2004-02-26 | Enzan Seisakusho:Kk | 半導体ウェハの保護部材剥離装置 |
| PT1568071T (pt) | 2002-11-29 | 2019-06-17 | Fraunhofer Ges Forschung | Pastilha com camada de separação e camada de suporte e seu processo de fabrico |
| JP2004300231A (ja) | 2003-03-31 | 2004-10-28 | Nitto Denko Corp | 熱剥離性両面粘着シート、被着体の加工方法および電子部品 |
| JP4592270B2 (ja) * | 2003-10-06 | 2010-12-01 | 日東電工株式会社 | 半導体ウエハの支持材からの剥離方法およびこれを用いた装置 |
| JP2006032506A (ja) | 2004-07-14 | 2006-02-02 | Taiyo Yuden Co Ltd | 半導体ウェハの剥離方法および剥離装置 |
| JP2006319233A (ja) * | 2005-05-16 | 2006-11-24 | Lintec Corp | 脆質部材の処理装置 |
| JP4885483B2 (ja) * | 2005-06-06 | 2012-02-29 | リンテック株式会社 | 転写装置とその方法、剥離装置とその方法、貼付装置とその方法 |
| JP5335443B2 (ja) * | 2006-03-01 | 2013-11-06 | シン マテリアルズ アクチェンゲゼルシャフト | ウエハ支持構造体及び該ウエハ支持構造体の製造に用いられる層システム |
| JP4970863B2 (ja) * | 2006-07-13 | 2012-07-11 | 日東電工株式会社 | 被加工物の加工方法 |
-
2008
- 2008-12-23 DE DE102008055155A patent/DE102008055155A1/de active Pending
-
2009
- 2009-01-29 EP EP09151661A patent/EP2202788A3/de not_active Withdrawn
- 2009-12-23 WO PCT/EP2009/067893 patent/WO2010072826A2/de not_active Ceased
- 2009-12-23 EP EP09795451.5A patent/EP2382656B1/de active Active
- 2009-12-23 JP JP2011542832A patent/JP5727382B2/ja active Active
- 2009-12-23 US US13/141,470 patent/US8951886B2/en active Active
- 2009-12-23 CN CN200980157334.7A patent/CN102326245B/zh active Active
- 2009-12-23 KR KR1020117017391A patent/KR101754327B1/ko active Active
- 2009-12-23 PT PT09795451T patent/PT2382656T/pt unknown
- 2009-12-23 SG SG2011045168A patent/SG172283A1/en unknown
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