PT2382656T - Processo de separação para um sistema de camadas que compreende um wafer - Google Patents
Processo de separação para um sistema de camadas que compreende um waferInfo
- Publication number
- PT2382656T PT2382656T PT09795451T PT09795451T PT2382656T PT 2382656 T PT2382656 T PT 2382656T PT 09795451 T PT09795451 T PT 09795451T PT 09795451 T PT09795451 T PT 09795451T PT 2382656 T PT2382656 T PT 2382656T
- Authority
- PT
- Portugal
- Prior art keywords
- wafer
- separation process
- layer system
- system understanding
- understanding
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
- H10P72/7442—Separation by peeling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
- H10P72/7442—Separation by peeling
- H10P72/7444—Separation by peeling using a peeling wedge, a knife or a bar
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102008055155.4A DE102008055155B4 (de) | 2008-12-23 | 2008-12-23 | Trennverfahren für ein Schichtsystem umfassend einen Wafer, Verwendung einer Polymethacrylatscheibe bei dem Verfahren und Vorrichtung zum Durchführen des Verfahrens |
| EP09151661A EP2202788A3 (de) | 2008-12-23 | 2009-01-29 | Trennverfahren für ein Schichtsystem umfassend einen Wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PT2382656T true PT2382656T (pt) | 2019-01-17 |
Family
ID=42097506
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PT09795451T PT2382656T (pt) | 2008-12-23 | 2009-12-23 | Processo de separação para um sistema de camadas que compreende um wafer |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US8951886B2 (enExample) |
| EP (2) | EP2202788A3 (enExample) |
| JP (1) | JP5727382B2 (enExample) |
| KR (1) | KR101754327B1 (enExample) |
| CN (1) | CN102326245B (enExample) |
| DE (1) | DE102008055155B4 (enExample) |
| PT (1) | PT2382656T (enExample) |
| SG (1) | SG172283A1 (enExample) |
| WO (1) | WO2010072826A2 (enExample) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8858756B2 (en) * | 2011-10-31 | 2014-10-14 | Masahiro Lee | Ultrathin wafer debonding systems |
| TWI428243B (zh) * | 2011-12-23 | 2014-03-01 | Ind Tech Res Inst | 可撓式元件的取下方法 |
| US8834662B2 (en) | 2012-03-22 | 2014-09-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method of separating wafer from carrier |
| US9269623B2 (en) | 2012-10-25 | 2016-02-23 | Rohm And Haas Electronic Materials Llc | Ephemeral bonding |
| KR102075635B1 (ko) | 2013-01-03 | 2020-03-02 | 삼성전자주식회사 | 웨이퍼 지지 구조물, 웨이퍼 지지 구조물을 포함하는 반도체 패키지의 중간 구조물, 및 중간 구조물을 이용한 반도체 패키지의 제조 방법 |
| CN103972133B (zh) * | 2013-01-25 | 2017-08-25 | 旭硝子株式会社 | 基板的剥离装置和剥离方法以及电子器件的制造方法 |
| JP6180811B2 (ja) * | 2013-06-19 | 2017-08-16 | 株式会社荏原製作所 | 基板処理装置 |
| KR20150011072A (ko) | 2013-07-22 | 2015-01-30 | 삼성전자주식회사 | 임시 접착제 조성물 및 이를 이용한 반도체 소자의 제조 방법 |
| US10103048B2 (en) * | 2013-08-28 | 2018-10-16 | Brewer Science, Inc. | Dual-layer bonding material process for temporary bonding of microelectronic substrates to carrier substrates |
| US9315696B2 (en) | 2013-10-31 | 2016-04-19 | Dow Global Technologies Llc | Ephemeral bonding |
| US9761474B2 (en) | 2013-12-19 | 2017-09-12 | Micron Technology, Inc. | Methods for processing semiconductor devices |
| JP6583639B2 (ja) | 2014-06-10 | 2019-10-02 | 日産化学株式会社 | 仮接着剤を用いた積層体 |
| DE102014219095B4 (de) | 2014-09-22 | 2026-05-28 | Nissan Chemical Industries, Ltd. | Wafer-Träger-Anordnung sowie Verfahren zur Bearbeitung der Rückseite eines Wafers |
| US9644118B2 (en) | 2015-03-03 | 2017-05-09 | Dow Global Technologies Llc | Method of releasably attaching a semiconductor substrate to a carrier |
| TW201705244A (zh) * | 2015-03-04 | 2017-02-01 | 康寧公司 | 用於控制並啓動基材自載體脫結之方法與設備 |
| CN105607311B (zh) * | 2016-01-04 | 2020-06-02 | 京东方科技集团股份有限公司 | 起角装置及其使用方法 |
| US10445253B2 (en) * | 2016-04-20 | 2019-10-15 | International Business Machines Corporation | Cost effective service level agreement data management |
| EP3477685A4 (en) | 2016-06-22 | 2020-07-01 | Nissan Chemical Corporation | POLYDIMETHYLSILOXANE ADHESIVE |
| WO2018216732A1 (ja) | 2017-05-24 | 2018-11-29 | 日産化学株式会社 | エポキシ変性ポリシロキサンを含有する仮接着剤 |
| KR102520889B1 (ko) | 2017-07-06 | 2023-04-12 | 닛산 가가쿠 가부시키가이샤 | 페닐기함유 폴리실록산을 함유하는 가접착제 |
| US10622326B2 (en) | 2017-08-18 | 2020-04-14 | Industrial Technology Research Institute | Chip package structure |
| US10249567B2 (en) | 2017-08-18 | 2019-04-02 | Industrial Technology Research Institute | Redistribution layer structure of semiconductor package |
| US10763135B2 (en) * | 2018-01-30 | 2020-09-01 | Facebook Technologies, Llc | Integrated elastomeric interface layer formation and singulation for light emitting diodes |
| EP3790038A4 (en) | 2018-05-01 | 2022-01-12 | Nissan Chemical Corporation | TEMPORARY ADHESIVE WITH POLYSILOXANE CONTAINING A HEAT RESISTANT POLYMERIZATION INHIBITOR |
| US10636829B1 (en) | 2018-10-24 | 2020-04-28 | Himax Technologies Limited | Wafer-level optical structure |
| WO2020100965A1 (ja) | 2018-11-16 | 2020-05-22 | 日産化学株式会社 | 積層体の剥離方法、積層体及び積層体の製造方法 |
| TWI837219B (zh) | 2018-11-16 | 2024-04-01 | 日商日產化學股份有限公司 | 紅外線剝離用接著劑組成物、積層體、積層體之製造方法及剝離方法 |
| CN113165344B (zh) | 2018-11-28 | 2023-09-12 | 日产化学株式会社 | 粘接剂组合物、层叠体、层叠体的制造方法以及半导体形成基板的薄化方法 |
| US20250215294A1 (en) | 2022-03-24 | 2025-07-03 | Nissan Chemical Corporation | Adhesive containing polyether-modified siloxane |
| CN115302938B (zh) * | 2022-08-25 | 2023-12-08 | 中国科学院上海硅酸盐研究所 | 一种分离胶合组件的方法 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06252149A (ja) * | 1993-02-25 | 1994-09-09 | Nitto Denko Corp | バンプ形成用複合フィルムおよびそれを用いた転写バンプ形成方法 |
| JPH06268051A (ja) * | 1993-03-10 | 1994-09-22 | Mitsubishi Electric Corp | ウエハ剥し装置 |
| US6342434B1 (en) | 1995-12-04 | 2002-01-29 | Hitachi, Ltd. | Methods of processing semiconductor wafer, and producing IC card, and carrier |
| CN1243327A (zh) | 1998-07-27 | 2000-02-02 | 佳能株式会社 | 样品加工装置和方法 |
| JP2001015721A (ja) | 1999-04-30 | 2001-01-19 | Canon Inc | 複合部材の分離方法及び薄膜の製造方法 |
| JP2001089291A (ja) * | 1999-09-20 | 2001-04-03 | Canon Inc | 液相成長法、半導体部材の製造方法、太陽電池の製造方法 |
| DE10128924A1 (de) * | 2001-06-15 | 2003-01-23 | Philips Corp Intellectual Pty | Verfahren zum Umsetzen eines im wesentlichen scheibenförmigen Werkstücks sowie Vorrichtung zum Durchführen dieses Verfahrens |
| DE10128923A1 (de) * | 2001-06-15 | 2003-01-23 | Philips Corp Intellectual Pty | Verfahren zum Umsetzen eines im wesentlichen scheibenförmigen Werkstücks und Vorrichtung zur Durchführung dieses Verfahrens |
| JP3892703B2 (ja) * | 2001-10-19 | 2007-03-14 | 富士通株式会社 | 半導体基板用治具及びこれを用いた半導体装置の製造方法 |
| JP3948930B2 (ja) * | 2001-10-31 | 2007-07-25 | 大日本スクリーン製造株式会社 | 薄膜形成装置および薄膜形成方法 |
| JP4215998B2 (ja) * | 2002-04-30 | 2009-01-28 | リンテック株式会社 | 半導体ウエハの処理方法およびそのための半導体ウエハの転写装置 |
| JP2004063645A (ja) * | 2002-07-26 | 2004-02-26 | Enzan Seisakusho:Kk | 半導体ウェハの保護部材剥離装置 |
| US7482249B2 (en) * | 2002-11-29 | 2009-01-27 | Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. | Method and device for machining a wafer, in addition to a wafer comprising a separation layer and a support layer |
| JP2004300231A (ja) | 2003-03-31 | 2004-10-28 | Nitto Denko Corp | 熱剥離性両面粘着シート、被着体の加工方法および電子部品 |
| JP4592270B2 (ja) * | 2003-10-06 | 2010-12-01 | 日東電工株式会社 | 半導体ウエハの支持材からの剥離方法およびこれを用いた装置 |
| JP2006032506A (ja) * | 2004-07-14 | 2006-02-02 | Taiyo Yuden Co Ltd | 半導体ウェハの剥離方法および剥離装置 |
| JP2006319233A (ja) * | 2005-05-16 | 2006-11-24 | Lintec Corp | 脆質部材の処理装置 |
| JP4885483B2 (ja) * | 2005-06-06 | 2012-02-29 | リンテック株式会社 | 転写装置とその方法、剥離装置とその方法、貼付装置とその方法 |
| WO2007099146A1 (de) | 2006-03-01 | 2007-09-07 | Jakob + Richter Ip-Verwertungsgesellschaft Mbh | Verfahren zum bearbeiten insbesondere dünnen der rückseite eines wafers, wafer-träger-anordnung hierfür und verfahren zur herstellung einer solchen wafer-träger-anordnung |
| JP4970863B2 (ja) | 2006-07-13 | 2012-07-11 | 日東電工株式会社 | 被加工物の加工方法 |
-
2008
- 2008-12-23 DE DE102008055155.4A patent/DE102008055155B4/de active Active
-
2009
- 2009-01-29 EP EP09151661A patent/EP2202788A3/de not_active Withdrawn
- 2009-12-23 WO PCT/EP2009/067893 patent/WO2010072826A2/de not_active Ceased
- 2009-12-23 JP JP2011542832A patent/JP5727382B2/ja active Active
- 2009-12-23 CN CN200980157334.7A patent/CN102326245B/zh active Active
- 2009-12-23 EP EP09795451.5A patent/EP2382656B1/de active Active
- 2009-12-23 KR KR1020117017391A patent/KR101754327B1/ko active Active
- 2009-12-23 PT PT09795451T patent/PT2382656T/pt unknown
- 2009-12-23 SG SG2011045168A patent/SG172283A1/en unknown
- 2009-12-23 US US13/141,470 patent/US8951886B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP5727382B2 (ja) | 2015-06-03 |
| EP2382656B1 (de) | 2018-10-03 |
| CN102326245B (zh) | 2017-04-19 |
| EP2202788A3 (de) | 2010-08-04 |
| SG172283A1 (en) | 2011-07-28 |
| WO2010072826A3 (de) | 2010-10-14 |
| US8951886B2 (en) | 2015-02-10 |
| US20120028438A1 (en) | 2012-02-02 |
| DE102008055155A1 (de) | 2010-07-01 |
| WO2010072826A2 (de) | 2010-07-01 |
| CN102326245A (zh) | 2012-01-18 |
| KR101754327B1 (ko) | 2017-07-19 |
| DE102008055155B4 (de) | 2026-07-30 |
| EP2202788A2 (de) | 2010-06-30 |
| JP2012513684A (ja) | 2012-06-14 |
| KR20110128174A (ko) | 2011-11-28 |
| EP2382656A2 (de) | 2011-11-02 |
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