DE102008055155B4 - Trennverfahren für ein Schichtsystem umfassend einen Wafer, Verwendung einer Polymethacrylatscheibe bei dem Verfahren und Vorrichtung zum Durchführen des Verfahrens - Google Patents

Trennverfahren für ein Schichtsystem umfassend einen Wafer, Verwendung einer Polymethacrylatscheibe bei dem Verfahren und Vorrichtung zum Durchführen des Verfahrens

Info

Publication number
DE102008055155B4
DE102008055155B4 DE102008055155.4A DE102008055155A DE102008055155B4 DE 102008055155 B4 DE102008055155 B4 DE 102008055155B4 DE 102008055155 A DE102008055155 A DE 102008055155A DE 102008055155 B4 DE102008055155 B4 DE 102008055155B4
Authority
DE
Germany
Prior art keywords
support
wafer
separating
separation
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE102008055155.4A
Other languages
German (de)
English (en)
Other versions
DE102008055155A1 (de
Inventor
Dr. Richter Franz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Chemical Corp
Original Assignee
Nissan Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Corp filed Critical Nissan Chemical Corp
Priority to DE102008055155.4A priority Critical patent/DE102008055155B4/de
Priority to EP09151661A priority patent/EP2202788A3/de
Priority to JP2011542832A priority patent/JP5727382B2/ja
Priority to CN200980157334.7A priority patent/CN102326245B/zh
Priority to PCT/EP2009/067893 priority patent/WO2010072826A2/de
Priority to KR1020117017391A priority patent/KR101754327B1/ko
Priority to PT09795451T priority patent/PT2382656T/pt
Priority to SG2011045168A priority patent/SG172283A1/en
Priority to US13/141,470 priority patent/US8951886B2/en
Priority to EP09795451.5A priority patent/EP2382656B1/de
Publication of DE102008055155A1 publication Critical patent/DE102008055155A1/de
Application granted granted Critical
Publication of DE102008055155B4 publication Critical patent/DE102008055155B4/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • H10P72/7442—Separation by peeling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • H10P72/7442—Separation by peeling
    • H10P72/7444—Separation by peeling using a peeling wedge, a knife or a bar

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
DE102008055155.4A 2008-12-23 2008-12-23 Trennverfahren für ein Schichtsystem umfassend einen Wafer, Verwendung einer Polymethacrylatscheibe bei dem Verfahren und Vorrichtung zum Durchführen des Verfahrens Active DE102008055155B4 (de)

Priority Applications (10)

Application Number Priority Date Filing Date Title
DE102008055155.4A DE102008055155B4 (de) 2008-12-23 2008-12-23 Trennverfahren für ein Schichtsystem umfassend einen Wafer, Verwendung einer Polymethacrylatscheibe bei dem Verfahren und Vorrichtung zum Durchführen des Verfahrens
EP09151661A EP2202788A3 (de) 2008-12-23 2009-01-29 Trennverfahren für ein Schichtsystem umfassend einen Wafer
CN200980157334.7A CN102326245B (zh) 2008-12-23 2009-12-23 用于包括晶片的层系统的分离方法
PCT/EP2009/067893 WO2010072826A2 (de) 2008-12-23 2009-12-23 Trennverfahren für ein schichtsystem umfassend einen wafer
KR1020117017391A KR101754327B1 (ko) 2008-12-23 2009-12-23 웨이퍼를 포함하는 층 시스템을 분리하는 방법
PT09795451T PT2382656T (pt) 2008-12-23 2009-12-23 Processo de separação para um sistema de camadas que compreende um wafer
JP2011542832A JP5727382B2 (ja) 2008-12-23 2009-12-23 ウェーハを含む層システムを分離する方法
SG2011045168A SG172283A1 (en) 2008-12-23 2009-12-23 Method for separating a layer system comprising a wafer
US13/141,470 US8951886B2 (en) 2008-12-23 2009-12-23 Method for separating a layer system comprising a wafer by precisely maintaining the position of the separating front
EP09795451.5A EP2382656B1 (de) 2008-12-23 2009-12-23 Trennverfahren für ein schichtsystem umfassend einen wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102008055155.4A DE102008055155B4 (de) 2008-12-23 2008-12-23 Trennverfahren für ein Schichtsystem umfassend einen Wafer, Verwendung einer Polymethacrylatscheibe bei dem Verfahren und Vorrichtung zum Durchführen des Verfahrens

Publications (2)

Publication Number Publication Date
DE102008055155A1 DE102008055155A1 (de) 2010-07-01
DE102008055155B4 true DE102008055155B4 (de) 2026-07-30

Family

ID=42097506

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102008055155.4A Active DE102008055155B4 (de) 2008-12-23 2008-12-23 Trennverfahren für ein Schichtsystem umfassend einen Wafer, Verwendung einer Polymethacrylatscheibe bei dem Verfahren und Vorrichtung zum Durchführen des Verfahrens

Country Status (9)

Country Link
US (1) US8951886B2 (enExample)
EP (2) EP2202788A3 (enExample)
JP (1) JP5727382B2 (enExample)
KR (1) KR101754327B1 (enExample)
CN (1) CN102326245B (enExample)
DE (1) DE102008055155B4 (enExample)
PT (1) PT2382656T (enExample)
SG (1) SG172283A1 (enExample)
WO (1) WO2010072826A2 (enExample)

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JP6180811B2 (ja) * 2013-06-19 2017-08-16 株式会社荏原製作所 基板処理装置
KR20150011072A (ko) 2013-07-22 2015-01-30 삼성전자주식회사 임시 접착제 조성물 및 이를 이용한 반도체 소자의 제조 방법
US10103048B2 (en) * 2013-08-28 2018-10-16 Brewer Science, Inc. Dual-layer bonding material process for temporary bonding of microelectronic substrates to carrier substrates
US9315696B2 (en) 2013-10-31 2016-04-19 Dow Global Technologies Llc Ephemeral bonding
US9761474B2 (en) 2013-12-19 2017-09-12 Micron Technology, Inc. Methods for processing semiconductor devices
JP6583639B2 (ja) 2014-06-10 2019-10-02 日産化学株式会社 仮接着剤を用いた積層体
DE102014219095B4 (de) 2014-09-22 2026-05-28 Nissan Chemical Industries, Ltd. Wafer-Träger-Anordnung sowie Verfahren zur Bearbeitung der Rückseite eines Wafers
US9644118B2 (en) 2015-03-03 2017-05-09 Dow Global Technologies Llc Method of releasably attaching a semiconductor substrate to a carrier
TW201705244A (zh) * 2015-03-04 2017-02-01 康寧公司 用於控制並啓動基材自載體脫結之方法與設備
CN105607311B (zh) * 2016-01-04 2020-06-02 京东方科技集团股份有限公司 起角装置及其使用方法
US10445253B2 (en) * 2016-04-20 2019-10-15 International Business Machines Corporation Cost effective service level agreement data management
EP3477685A4 (en) 2016-06-22 2020-07-01 Nissan Chemical Corporation POLYDIMETHYLSILOXANE ADHESIVE
WO2018216732A1 (ja) 2017-05-24 2018-11-29 日産化学株式会社 エポキシ変性ポリシロキサンを含有する仮接着剤
KR102520889B1 (ko) 2017-07-06 2023-04-12 닛산 가가쿠 가부시키가이샤 페닐기함유 폴리실록산을 함유하는 가접착제
US10622326B2 (en) 2017-08-18 2020-04-14 Industrial Technology Research Institute Chip package structure
US10249567B2 (en) 2017-08-18 2019-04-02 Industrial Technology Research Institute Redistribution layer structure of semiconductor package
US10763135B2 (en) * 2018-01-30 2020-09-01 Facebook Technologies, Llc Integrated elastomeric interface layer formation and singulation for light emitting diodes
EP3790038A4 (en) 2018-05-01 2022-01-12 Nissan Chemical Corporation TEMPORARY ADHESIVE WITH POLYSILOXANE CONTAINING A HEAT RESISTANT POLYMERIZATION INHIBITOR
US10636829B1 (en) 2018-10-24 2020-04-28 Himax Technologies Limited Wafer-level optical structure
WO2020100965A1 (ja) 2018-11-16 2020-05-22 日産化学株式会社 積層体の剥離方法、積層体及び積層体の製造方法
TWI837219B (zh) 2018-11-16 2024-04-01 日商日產化學股份有限公司 紅外線剝離用接著劑組成物、積層體、積層體之製造方法及剝離方法
CN113165344B (zh) 2018-11-28 2023-09-12 日产化学株式会社 粘接剂组合物、层叠体、层叠体的制造方法以及半导体形成基板的薄化方法
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CN115302938B (zh) * 2022-08-25 2023-12-08 中国科学院上海硅酸盐研究所 一种分离胶合组件的方法

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DE4407735C2 (de) 1993-03-10 1996-06-27 Mitsubishi Electric Corp Gerät zum Ablösen eines Wafers von einer Trägerplatte
WO2004051708A2 (de) 2002-11-29 2004-06-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und vorrichtung zum bearbeiten eines wafers sowie wafer mit trennschicht und trägerschicht
WO2007099146A1 (de) 2006-03-01 2007-09-07 Jakob + Richter Ip-Verwertungsgesellschaft Mbh Verfahren zum bearbeiten insbesondere dünnen der rückseite eines wafers, wafer-träger-anordnung hierfür und verfahren zur herstellung einer solchen wafer-träger-anordnung

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DE4407735C2 (de) 1993-03-10 1996-06-27 Mitsubishi Electric Corp Gerät zum Ablösen eines Wafers von einer Trägerplatte
WO2004051708A2 (de) 2002-11-29 2004-06-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und vorrichtung zum bearbeiten eines wafers sowie wafer mit trennschicht und trägerschicht
WO2007099146A1 (de) 2006-03-01 2007-09-07 Jakob + Richter Ip-Verwertungsgesellschaft Mbh Verfahren zum bearbeiten insbesondere dünnen der rückseite eines wafers, wafer-träger-anordnung hierfür und verfahren zur herstellung einer solchen wafer-träger-anordnung

Also Published As

Publication number Publication date
JP5727382B2 (ja) 2015-06-03
EP2382656B1 (de) 2018-10-03
CN102326245B (zh) 2017-04-19
EP2202788A3 (de) 2010-08-04
SG172283A1 (en) 2011-07-28
WO2010072826A3 (de) 2010-10-14
US8951886B2 (en) 2015-02-10
US20120028438A1 (en) 2012-02-02
PT2382656T (pt) 2019-01-17
DE102008055155A1 (de) 2010-07-01
WO2010072826A2 (de) 2010-07-01
CN102326245A (zh) 2012-01-18
KR101754327B1 (ko) 2017-07-19
EP2202788A2 (de) 2010-06-30
JP2012513684A (ja) 2012-06-14
KR20110128174A (ko) 2011-11-28
EP2382656A2 (de) 2011-11-02

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