SG172283A1 - Method for separating a layer system comprising a wafer - Google Patents

Method for separating a layer system comprising a wafer Download PDF

Info

Publication number
SG172283A1
SG172283A1 SG2011045168A SG2011045168A SG172283A1 SG 172283 A1 SG172283 A1 SG 172283A1 SG 2011045168 A SG2011045168 A SG 2011045168A SG 2011045168 A SG2011045168 A SG 2011045168A SG 172283 A1 SG172283 A1 SG 172283A1
Authority
SG
Singapore
Prior art keywords
carrier
separating
wafer
layer
layer system
Prior art date
Application number
SG2011045168A
Other languages
English (en)
Inventor
Franz Richter
Original Assignee
Thin Materials Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thin Materials Ag filed Critical Thin Materials Ag
Publication of SG172283A1 publication Critical patent/SG172283A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling
    • H01L2221/6839—Separation by peeling using peeling wedge or knife or bar

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
SG2011045168A 2008-12-23 2009-12-23 Method for separating a layer system comprising a wafer SG172283A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008055155A DE102008055155A1 (de) 2008-12-23 2008-12-23 Trennverfahren für ein Schichtsystem umfassend einen Wafer
EP09151661A EP2202788A3 (de) 2008-12-23 2009-01-29 Trennverfahren für ein Schichtsystem umfassend einen Wafer
PCT/EP2009/067893 WO2010072826A2 (de) 2008-12-23 2009-12-23 Trennverfahren für ein schichtsystem umfassend einen wafer

Publications (1)

Publication Number Publication Date
SG172283A1 true SG172283A1 (en) 2011-07-28

Family

ID=42097506

Family Applications (1)

Application Number Title Priority Date Filing Date
SG2011045168A SG172283A1 (en) 2008-12-23 2009-12-23 Method for separating a layer system comprising a wafer

Country Status (9)

Country Link
US (1) US8951886B2 (enExample)
EP (2) EP2202788A3 (enExample)
JP (1) JP5727382B2 (enExample)
KR (1) KR101754327B1 (enExample)
CN (1) CN102326245B (enExample)
DE (1) DE102008055155A1 (enExample)
PT (1) PT2382656T (enExample)
SG (1) SG172283A1 (enExample)
WO (1) WO2010072826A2 (enExample)

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JP6180811B2 (ja) * 2013-06-19 2017-08-16 株式会社荏原製作所 基板処理装置
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US10103048B2 (en) * 2013-08-28 2018-10-16 Brewer Science, Inc. Dual-layer bonding material process for temporary bonding of microelectronic substrates to carrier substrates
US9315696B2 (en) 2013-10-31 2016-04-19 Dow Global Technologies Llc Ephemeral bonding
US9761474B2 (en) 2013-12-19 2017-09-12 Micron Technology, Inc. Methods for processing semiconductor devices
WO2015190438A1 (ja) 2014-06-10 2015-12-17 日産化学工業株式会社 仮接着剤を用いた積層体
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US9644118B2 (en) 2015-03-03 2017-05-09 Dow Global Technologies Llc Method of releasably attaching a semiconductor substrate to a carrier
TW201705244A (zh) * 2015-03-04 2017-02-01 康寧公司 用於控制並啓動基材自載體脫結之方法與設備
CN105607311B (zh) * 2016-01-04 2020-06-02 京东方科技集团股份有限公司 起角装置及其使用方法
US10445253B2 (en) * 2016-04-20 2019-10-15 International Business Machines Corporation Cost effective service level agreement data management
EP3477685A4 (en) 2016-06-22 2020-07-01 Nissan Chemical Corporation POLYDIMETHYLSILOXANE ADHESIVE
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WO2019009365A1 (ja) 2017-07-06 2019-01-10 日産化学株式会社 フェニル基含有ポリシロキサンを含有する仮接着剤
US10249567B2 (en) 2017-08-18 2019-04-02 Industrial Technology Research Institute Redistribution layer structure of semiconductor package
US10622326B2 (en) 2017-08-18 2020-04-14 Industrial Technology Research Institute Chip package structure
US10763135B2 (en) * 2018-01-30 2020-09-01 Facebook Technologies, Llc Integrated elastomeric interface layer formation and singulation for light emitting diodes
JP7424969B2 (ja) 2018-05-01 2024-01-30 日産化学株式会社 耐熱性重合禁止剤を含むポリシロキサンを含有する仮接着剤
US10636829B1 (en) 2018-10-24 2020-04-28 Himax Technologies Limited Wafer-level optical structure
TW202428830A (zh) 2018-11-16 2024-07-16 日商日產化學股份有限公司 紅外線剝離用接著劑組成物、積層體、積層體之製造方法及剝離方法
EP3882954A4 (en) 2018-11-16 2022-07-27 Nissan Chemical Corporation LAMINATE REMOVAL METHOD, LAMINATE, AND LAMINATE PRODUCTION METHOD
EP3888909A4 (en) 2018-11-28 2022-08-24 Nissan Chemical Corporation ADHESIVE COMPOSITION, LAYERING PRODUCT AND METHOD OF MANUFACTURING A LAYERING PRODUCT AND METHOD OF THICKNESSING A SEMICONDUCTOR SUBSTRATE
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CN115302938B (zh) * 2022-08-25 2023-12-08 中国科学院上海硅酸盐研究所 一种分离胶合组件的方法

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Also Published As

Publication number Publication date
EP2202788A3 (de) 2010-08-04
EP2382656A2 (de) 2011-11-02
CN102326245B (zh) 2017-04-19
JP5727382B2 (ja) 2015-06-03
KR101754327B1 (ko) 2017-07-19
DE102008055155A1 (de) 2010-07-01
JP2012513684A (ja) 2012-06-14
WO2010072826A2 (de) 2010-07-01
EP2382656B1 (de) 2018-10-03
EP2202788A2 (de) 2010-06-30
WO2010072826A3 (de) 2010-10-14
US8951886B2 (en) 2015-02-10
CN102326245A (zh) 2012-01-18
PT2382656T (pt) 2019-01-17
KR20110128174A (ko) 2011-11-28
US20120028438A1 (en) 2012-02-02

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