WO2019009365A1 - フェニル基含有ポリシロキサンを含有する仮接着剤 - Google Patents
フェニル基含有ポリシロキサンを含有する仮接着剤 Download PDFInfo
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- WO2019009365A1 WO2019009365A1 PCT/JP2018/025542 JP2018025542W WO2019009365A1 WO 2019009365 A1 WO2019009365 A1 WO 2019009365A1 JP 2018025542 W JP2018025542 W JP 2018025542W WO 2019009365 A1 WO2019009365 A1 WO 2019009365A1
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- WIPO (PCT)
- Prior art keywords
- wafer
- substrate
- adhesive
- component
- group
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- 239000000853 adhesive Substances 0.000 title claims abstract description 128
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 title claims abstract description 25
- -1 polysiloxane Polymers 0.000 title claims description 85
- 229920001296 polysiloxane Polymers 0.000 title claims description 30
- 239000012790 adhesive layer Substances 0.000 claims abstract description 130
- 239000000758 substrate Substances 0.000 claims abstract description 90
- 238000005498 polishing Methods 0.000 claims abstract description 25
- 230000001070 adhesive effect Effects 0.000 claims description 119
- 238000000034 method Methods 0.000 claims description 40
- 238000010438 heat treatment Methods 0.000 claims description 23
- 125000004432 carbon atom Chemical group C* 0.000 claims description 22
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 20
- 125000000217 alkyl group Chemical group 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 125000003342 alkenyl group Chemical group 0.000 claims description 12
- 239000003054 catalyst Substances 0.000 claims description 11
- 239000010410 layer Substances 0.000 claims description 10
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 9
- 238000006459 hydrosilylation reaction Methods 0.000 claims description 9
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 125000003636 chemical group Chemical group 0.000 claims description 5
- 229910018540 Si C Inorganic materials 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims 2
- 125000005375 organosiloxane group Chemical group 0.000 claims 1
- 238000003672 processing method Methods 0.000 abstract description 2
- 230000032798 delamination Effects 0.000 abstract 1
- 238000005805 hydroxylation reaction Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 184
- 239000000203 mixture Substances 0.000 description 16
- 239000011521 glass Substances 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 239000002904 solvent Substances 0.000 description 10
- 230000007547 defect Effects 0.000 description 9
- 238000000926 separation method Methods 0.000 description 9
- 238000012360 testing method Methods 0.000 description 8
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 8
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 7
- 229910052697 platinum Inorganic materials 0.000 description 7
- 238000004528 spin coating Methods 0.000 description 7
- 239000011800 void material Substances 0.000 description 6
- 238000012790 confirmation Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 239000004205 dimethyl polysiloxane Substances 0.000 description 4
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 4
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000003112 inhibitor Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 238000006116 polymerization reaction Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- QYLFHLNFIHBCPR-UHFFFAOYSA-N 1-ethynylcyclohexan-1-ol Chemical compound C#CC1(O)CCCCC1 QYLFHLNFIHBCPR-UHFFFAOYSA-N 0.000 description 2
- ZPVFWPFBNIEHGJ-UHFFFAOYSA-N 2-octanone Chemical compound CCCCCCC(C)=O ZPVFWPFBNIEHGJ-UHFFFAOYSA-N 0.000 description 2
- WADSJYLPJPTMLN-UHFFFAOYSA-N 3-(cycloundecen-1-yl)-1,2-diazacycloundec-2-ene Chemical compound C1CCCCCCCCC=C1C1=NNCCCCCCCC1 WADSJYLPJPTMLN-UHFFFAOYSA-N 0.000 description 2
- GJCOSYZMQJWQCA-UHFFFAOYSA-N 9H-xanthene Chemical compound C1=CC=C2CC3=CC=CC=C3OC2=C1 GJCOSYZMQJWQCA-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 150000001336 alkenes Chemical class 0.000 description 2
- RWGFKTVRMDUZSP-UHFFFAOYSA-N cumene Chemical compound CC(C)C1=CC=CC=C1 RWGFKTVRMDUZSP-UHFFFAOYSA-N 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- SNRUBQQJIBEYMU-UHFFFAOYSA-N dodecane Chemical compound CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 2
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- XMGQYMWWDOXHJM-UHFFFAOYSA-N limonene Chemical compound CC(=C)C1CCC(C)=CC1 XMGQYMWWDOXHJM-UHFFFAOYSA-N 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- VKCYHJWLYTUGCC-UHFFFAOYSA-N nonan-2-one Chemical compound CCCCCCCC(C)=O VKCYHJWLYTUGCC-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- CLSUSRZJUQMOHH-UHFFFAOYSA-L platinum dichloride Chemical compound Cl[Pt]Cl CLSUSRZJUQMOHH-UHFFFAOYSA-L 0.000 description 2
- 125000001424 substituent group Chemical group 0.000 description 2
- FPGGTKZVZWFYPV-UHFFFAOYSA-M tetrabutylammonium fluoride Chemical compound [F-].CCCC[N+](CCCC)(CCCC)CCCC FPGGTKZVZWFYPV-UHFFFAOYSA-M 0.000 description 2
- RSJKGSCJYJTIGS-UHFFFAOYSA-N undecane Chemical compound CCCCCCCCCCC RSJKGSCJYJTIGS-UHFFFAOYSA-N 0.000 description 2
- 125000006079 1,1,2-trimethyl-2-propenyl group Chemical group 0.000 description 1
- 125000006033 1,1-dimethyl-2-propenyl group Chemical group 0.000 description 1
- 125000006060 1,1-dimethyl-3-butenyl group Chemical group 0.000 description 1
- 125000006061 1,2-dimethyl-1-butenyl group Chemical group 0.000 description 1
- 125000006034 1,2-dimethyl-1-propenyl group Chemical group 0.000 description 1
- 125000006062 1,2-dimethyl-2-butenyl group Chemical group 0.000 description 1
- 125000006035 1,2-dimethyl-2-propenyl group Chemical group 0.000 description 1
- 125000006063 1,2-dimethyl-3-butenyl group Chemical group 0.000 description 1
- 125000006064 1,3-dimethyl-1-butenyl group Chemical group 0.000 description 1
- 125000006065 1,3-dimethyl-2-butenyl group Chemical group 0.000 description 1
- 125000006066 1,3-dimethyl-3-butenyl group Chemical group 0.000 description 1
- 125000004973 1-butenyl group Chemical group C(=CCC)* 0.000 description 1
- 125000006073 1-ethyl-1-butenyl group Chemical group 0.000 description 1
- 125000006074 1-ethyl-2-butenyl group Chemical group 0.000 description 1
- 125000006081 1-ethyl-2-methyl-1-propenyl group Chemical group 0.000 description 1
- 125000006082 1-ethyl-2-methyl-2-propenyl group Chemical group 0.000 description 1
- 125000006075 1-ethyl-3-butenyl group Chemical group 0.000 description 1
- 125000006039 1-hexenyl group Chemical group 0.000 description 1
- 125000006025 1-methyl-1-butenyl group Chemical group 0.000 description 1
- 125000006044 1-methyl-1-pentenyl group Chemical group 0.000 description 1
- 125000006019 1-methyl-1-propenyl group Chemical group 0.000 description 1
- 125000006028 1-methyl-2-butenyl group Chemical group 0.000 description 1
- 125000006048 1-methyl-2-pentenyl group Chemical group 0.000 description 1
- 125000006021 1-methyl-2-propenyl group Chemical group 0.000 description 1
- 125000006030 1-methyl-3-butenyl group Chemical group 0.000 description 1
- 125000006052 1-methyl-3-pentenyl group Chemical group 0.000 description 1
- 125000006055 1-methyl-4-pentenyl group Chemical group 0.000 description 1
- 125000006023 1-pentenyl group Chemical group 0.000 description 1
- 125000006017 1-propenyl group Chemical group 0.000 description 1
- 125000006067 2,2-dimethyl-3-butenyl group Chemical group 0.000 description 1
- 125000006068 2,3-dimethyl-1-butenyl group Chemical group 0.000 description 1
- 125000006069 2,3-dimethyl-2-butenyl group Chemical group 0.000 description 1
- 125000006070 2,3-dimethyl-3-butenyl group Chemical group 0.000 description 1
- PTTPXKJBFFKCEK-UHFFFAOYSA-N 2-Methyl-4-heptanone Chemical compound CC(C)CC(=O)CC(C)C PTTPXKJBFFKCEK-UHFFFAOYSA-N 0.000 description 1
- 125000004974 2-butenyl group Chemical group C(C=CC)* 0.000 description 1
- 125000006076 2-ethyl-1-butenyl group Chemical group 0.000 description 1
- 125000006077 2-ethyl-2-butenyl group Chemical group 0.000 description 1
- 125000006078 2-ethyl-3-butenyl group Chemical group 0.000 description 1
- 125000006040 2-hexenyl group Chemical group 0.000 description 1
- 125000006026 2-methyl-1-butenyl group Chemical group 0.000 description 1
- 125000006045 2-methyl-1-pentenyl group Chemical group 0.000 description 1
- 125000006020 2-methyl-1-propenyl group Chemical group 0.000 description 1
- 125000006029 2-methyl-2-butenyl group Chemical group 0.000 description 1
- 125000006049 2-methyl-2-pentenyl group Chemical group 0.000 description 1
- 125000006022 2-methyl-2-propenyl group Chemical group 0.000 description 1
- 125000006031 2-methyl-3-butenyl group Chemical group 0.000 description 1
- 125000006053 2-methyl-3-pentenyl group Chemical group 0.000 description 1
- 125000006056 2-methyl-4-pentenyl group Chemical group 0.000 description 1
- GTJOHISYCKPIMT-UHFFFAOYSA-N 2-methylundecane Chemical compound CCCCCCCCCC(C)C GTJOHISYCKPIMT-UHFFFAOYSA-N 0.000 description 1
- 125000006024 2-pentenyl group Chemical group 0.000 description 1
- 125000006071 3,3-dimethyl-1-butenyl group Chemical group 0.000 description 1
- 125000004975 3-butenyl group Chemical group C(CC=C)* 0.000 description 1
- 125000006041 3-hexenyl group Chemical group 0.000 description 1
- 125000006027 3-methyl-1-butenyl group Chemical group 0.000 description 1
- 125000006046 3-methyl-1-pentenyl group Chemical group 0.000 description 1
- 125000006050 3-methyl-2-pentenyl group Chemical group 0.000 description 1
- 125000006054 3-methyl-3-pentenyl group Chemical group 0.000 description 1
- 125000006057 3-methyl-4-pentenyl group Chemical group 0.000 description 1
- QYXVDGZUXHFXTO-UHFFFAOYSA-L 3-oxobutanoate;platinum(2+) Chemical compound [Pt+2].CC(=O)CC([O-])=O.CC(=O)CC([O-])=O QYXVDGZUXHFXTO-UHFFFAOYSA-L 0.000 description 1
- 125000006042 4-hexenyl group Chemical group 0.000 description 1
- 125000006047 4-methyl-1-pentenyl group Chemical group 0.000 description 1
- 125000006051 4-methyl-2-pentenyl group Chemical group 0.000 description 1
- 125000003119 4-methyl-3-pentenyl group Chemical group [H]\C(=C(/C([H])([H])[H])C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000006058 4-methyl-4-pentenyl group Chemical group 0.000 description 1
- 125000006043 5-hexenyl group Chemical group 0.000 description 1
- NEEKVKZFYBQFGT-BTJKTKAUSA-N 9-amino-1,2,3,4-tetrahydroacridin-1-ol;(z)-but-2-enedioic acid Chemical compound OC(=O)\C=C/C(O)=O.C1=CC=C2C(N)=C(C(O)CCC3)C3=NC2=C1 NEEKVKZFYBQFGT-BTJKTKAUSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- SGVYKUFIHHTIFL-UHFFFAOYSA-N Isobutylhexyl Natural products CCCCCCCC(C)C SGVYKUFIHHTIFL-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 238000007259 addition reaction Methods 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 229920005601 base polymer Polymers 0.000 description 1
- FSIJKGMIQTVTNP-UHFFFAOYSA-N bis(ethenyl)-methyl-trimethylsilyloxysilane Chemical compound C[Si](C)(C)O[Si](C)(C=C)C=C FSIJKGMIQTVTNP-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- NYMPGSQKHIOWIO-UHFFFAOYSA-N hydroxy(diphenyl)silicon Chemical group C=1C=CC=CC=1[Si](O)C1=CC=CC=C1 NYMPGSQKHIOWIO-UHFFFAOYSA-N 0.000 description 1
- PQPVPZTVJLXQAS-UHFFFAOYSA-N hydroxy-methyl-phenylsilicon Chemical group C[Si](O)C1=CC=CC=C1 PQPVPZTVJLXQAS-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- VKPSKYDESGTTFR-UHFFFAOYSA-N isododecane Natural products CC(C)(C)CC(C)CC(C)(C)C VKPSKYDESGTTFR-UHFFFAOYSA-N 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229940087305 limonene Drugs 0.000 description 1
- 235000001510 limonene Nutrition 0.000 description 1
- 125000005647 linker group Chemical group 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- WSGCRAOTEDLMFQ-UHFFFAOYSA-N nonan-5-one Chemical compound CCCCC(=O)CCCC WSGCRAOTEDLMFQ-UHFFFAOYSA-N 0.000 description 1
- HUOPKZGUMQMTIO-UHFFFAOYSA-N nonane;octane Chemical compound CCCCCCCC.CCCCCCCCC HUOPKZGUMQMTIO-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 125000001844 prenyl group Chemical group [H]C([*])([H])C([H])=C(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229920001285 xanthan gum Polymers 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
- C09J5/06—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/38—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of noble metals
- B01J23/40—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of noble metals of the platinum group metals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/70—Siloxanes defined by use of the MDTQ nomenclature
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
- C08J7/08—Heat treatment
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/04—Non-macromolecular additives inorganic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
- C09J183/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J201/00—Adhesives based on unspecified macromolecular compounds
- C09J201/02—Adhesives based on unspecified macromolecular compounds characterised by the presence of specified groups, e.g. terminal or pendant functional groups
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J4/00—Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/06—Preparatory processes
- C08G77/08—Preparatory processes characterised by the catalysts used
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/12—Polysiloxanes containing silicon bound to hydrogen
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- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/80—Siloxanes having aromatic substituents, e.g. phenyl side groups
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/50—Additional features of adhesives in the form of films or foils characterized by process specific features
- C09J2301/502—Additional features of adhesives in the form of films or foils characterized by process specific features process for debonding adherents
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2483/00—Presence of polysiloxane
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- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
Definitions
- the present invention relates to a temporary adhesive for fixing a wafer to a support during polishing of the back surface of the wafer and a laminate using the same.
- each wafer to be integrated is thinned by polishing on the side opposite to the formed circuit surface (i.e., the back surface), and the thinned semiconductor wafers are stacked.
- a semiconductor wafer (also referred to herein as just a wafer) before thinning is bonded to a support for polishing in a polishing apparatus.
- the adhesion at that time is called temporary adhesion because the semiconductor wafer must be easily peeled off after polishing. This temporary bond must be easily removed from the support, and if a large force is applied for removal, the thinned semiconductor wafer may be cut or deformed, which does not occur. As well, easily removed. However, it is also not preferable that the semiconductor wafer is dislodged or deviated by polishing stress at the time of back surface polishing. Therefore, the performance required for temporary bonding is to withstand the stress during polishing and to be easily removed after polishing.
- Patent Document 1 and Patent Document 2 a method having an adhesion layer and a separation layer, wherein the separation layer is formed by plasma polymerization of dimethylsiloxane and mechanically separated after polishing
- Patent Document 3 A method of bonding a support substrate and a semiconductor wafer with an adhesive composition, polishing the back surface of the semiconductor wafer and then removing the adhesive with an etching solution
- Patent Document 3 A processed wafer comprising a combination of a polymerization layer obtained by polymerizing an alkenyl group-containing organopolysiloxane and a hydrosilyl group-containing organopolysiloxane with a platinum catalyst and a polymerization layer formed of a thermosetting polysiloxane
- Patent Document 4 Patent Reference 5 and Patent Document 6 and Patent Document 7 are disclosed.
- the present invention is, as a first aspect, an adhesive for releasably bonding between a support and a circuit surface of a wafer and processing the back surface of the wafer, wherein the adhesive cures by a hydrosilylation reaction ((1) The adhesive containing A) and a component (B) containing a phenyl group-containing polyorganosiloxane, wherein the weight percentage of the component (A) and the component (B) is a ratio of 95: 5 to 30:70,
- component (A) siloxane units (Q units) represented by SiO 2, siloxane units (M units) represented by R 1 R 2 R 3 SiO 1/2 , R 4 R 5 SiO
- the monovalent chemical group represented by R 1 to R 6 is an alkyl group having 1 to 10 carbon atoms and the number of carbon atoms, each of which is a C bond or a Si—H bond.
- the adhesive according to the first aspect which comprises a polysiloxane (A1) containing the above, and a platinum group metal-based catalyst (A2),
- the adhesive according to any one of the first to third aspects, wherein the processing is polishing the back surface of a wafer
- the adhesive according to any one of the first to fourth aspects is applied onto a first substrate to form an adhesive layer, and a second substrate is joined and heated from the first substrate side Bonding method of laminates,
- the bonding method according to the fifth aspect wherein the first substrate is a support, the second substrate is a wafer, and the circuit surface of the wafer faces the first substrate.
- the bonding method according to the fifth aspect wherein the first substrate is a wafer, the second substrate is a support, and the circuit surface of the wafer faces the second substrate,
- the adhesive according to any one of the first to third aspects is coated on a first substrate to form an adhesive layer, a second substrate is joined, and heating is performed from the first substrate side. After curing the adhesive to form a laminate, the laminate is processed, and a peeling method which causes peeling between the first substrate, the second substrate and the adhesive layer,
- the adhesive described in the fourth aspect is coated on the first substrate to form an adhesive layer, the second substrate is joined, and the adhesive is cured by heating from the first substrate side to form a laminate. And processing the laminate to form a peeling between the first substrate, the second substrate and the adhesive layer,
- the peeling method according to the eighth aspect wherein the first substrate is a support, the second substrate is a wafer, and the circuit surface of the wafer faces the first substrate,
- the peeling method according to the ninth aspect wherein the first substrate is a support, the second substrate is a wafer, and the circuit surface of the wafer faces the first substrate,
- the peeling method according to the eighth aspect wherein the first substrate is a wafer, the second substrate is a support, and the circuit surface of the wafer faces the second substrate,
- the peeling method according to the ninth aspect wherein the first substrate is a wafer, the second substrate is a support, and the circuit surface of the wafer faces the second substrate,
- the processing is polishing the back surface of the wafer.
- the component (A) is an adhesive for releasably bonding between a support and a circuit surface of a wafer to process the back surface of the wafer, and curing by a hydrosilylation reaction
- An adhesive (temporary adhesive) characterized by including a phenyl group-containing polyorganosiloxane component (B) is provided.
- the temporary adhesive loaded between the support and the circuit surface of the wafer includes a component (A) that crosslinks and hardens by a hydrosilylation reaction, and a component (B) having a phenyl group; It is a laminate for processing the back side of the wafer on the opposite side, and by combining polysiloxane of a specific component, it excels in spin coatability to the circuit side of the wafer, and when bonding with adhesive layer or processing the back side of wafer It is possible to easily peel off after processing the back surface of the wafer, that is, after polishing, and after peeling off, the adhesive agent attached to the wafer or the support can be easily removed by a solvent or a tape.
- the processing on the opposite side of the circuit surface of the wafer involves thinning of the wafer by polishing. Thereafter, through silicon vias (TSVs) and the like are formed, and then the thinned wafer is peeled off from the support to form a laminated body of wafers, which is three-dimensionally mounted. In addition, the formation of a wafer back surface electrode and the like is also performed before and after that. While wafer thinning and TSV processes are subjected to heat at 250-350 ° C while bonded to a support, laminates as adhesives used in the present invention have their heat resistance .
- the present invention is an adhesive for releasably bonding between a support and a circuit surface of a wafer and processing the back surface of the wafer, wherein the adhesive cures by a hydrosilylation reaction and contains a component (A) and a phenyl group.
- the adhesive which comprises a component (B) containing a polyorganosiloxane and the ratio by mass of the component (A) to the component (B) is 95: 5 to 30:70.
- the thickness of the wafer can be reduced by temporarily bonding the support and the wafer with an adhesive and processing the back surface of the wafer opposite to the circuit surface by polishing or the like.
- the temporary adhesion is performed when the back of the wafer is polished, and after the back of the wafer is polished, the support and the thinned wafer can be separated.
- peelable means that the peel strength is lower than at other peel points, and it is easy to peel.
- the adhesive layer is formed by an adhesive.
- the adhesive contains the component (A) and the component (B), and may further contain other additives.
- Component (A) is a siloxane unit represented by SiO 2 (Q unit), a siloxane unit represented by R 1 R 2 R 3 SiO 1/2 (M unit), R 4 R 5 SiO 2/2 Selected from the group consisting of the siloxane unit (D unit) and the siloxane unit (T unit) represented by R 6 SiO 3/2 (wherein R 1 to R 6 each represent a Si—C bond or Si— And the monovalent chemical group represented by R 1 to R 6 is an alkyl group having 1 to 10 carbon atoms and an alkenyl group having 2 to 10 carbon atoms.
- a polysiloxane comprising a polyorganosiloxane (a1) containing a group and a polyorganosiloxane (a2) wherein the monovalent chemical group represented by R 1 to R 6 contains an alkyl group having 1 to 10 carbon atoms and a hydrogen atom, respectively It contains a xanthan (A1) and a platinum group metal-based catalyst (A2).
- Polysiloxane (A1) contains polyorganosiloxane (a1) and polyorganosiloxane (a2).
- the polyorganosiloxane (a1) contains an alkyl group having 1 to 10 carbon atoms and an alkenyl group having 2 to 10 carbon atoms
- the polyorganosiloxane (a2) has an alkyl group having 1 to 10 carbon atoms and a hydrogen atom Contains.
- the alkenyl group and the Si-H group form a crosslinked structure by the hydrosilylation reaction with the platinum group metal catalyst (A2) and cure.
- the polyorganosiloxane (a1) is selected from Q unit, M unit, D unit and T unit, for example, a combination of (Q unit and M unit) and (D unit and M unit), (T unit and M unit) Combination of (D unit and M unit), combination of (Q unit, T unit and M unit) and (T unit and M unit), combination of (T unit and M unit), (Q unit and M unit) Can be formed by a combination of
- the polyorganosiloxane (a2) is selected from Q unit, M unit, D unit, T unit, for example, a combination of (M unit and D unit), a combination of (Q unit and M unit), (Q unit and T unit) And M units) can be formed.
- the alkenyl group having 2 to 10 carbon atoms is, for example, ethenyl group, 1-propenyl group, 2-propenyl group, 1-methyl-1-ethenyl group, 1-butenyl group, 2-butenyl group, 3-butenyl group, 2-Methyl-1-propenyl group, 2-methyl-2-propenyl group, 1-ethylethenyl group, 1-methyl-1-propenyl group, 1-methyl-2-propenyl group, 1-pentenyl group, 2-pentenyl group , 3-pentenyl group, 4-pentenyl group, 1-n-propylethenyl group, 1-methyl-1-butenyl group, 1-methyl-2-butenyl group, 1-methyl-3-butenyl group, 2-ethyl -2-propenyl group, 2-methyl-1-butenyl group, 2-methyl-2-butenyl group, 2-methyl-3-butenyl group, 3-methyl-1-butenyl group, 3-methyl-2-
- the alkyl group having 1 to 10 carbon atoms is, for example, methyl group, ethyl group, n-propyl group, i-propyl group, n-butyl group, i-butyl group, s-butyl group, t-butyl group, n -Pentyl group, 1-methyl-n-butyl group, 2-methyl-n-butyl group, 3-methyl-n-butyl group, 1,1-dimethyl-n-propyl group, 1,2-dimethyl-n-butyl group Propyl, 2,2-dimethyl-n-propyl, 1-ethyl-n-propyl, n-hexyl, 1-methyl-n-pentyl, 2-methyl-n-pentyl, 3-methyl- n-pentyl group, 4-methyl-n-pentyl group, 1,1-dimethyl-n-butyl group, 1,2-dimethyl-n-butyl group, 1,3-di
- the polyorganosiloxane (a1) is composed of an alkyl group having 1 to 10 carbon atoms and an alkenyl group having 2 to 10 carbon atoms, and the alkyl group having 1 to 10 carbon atoms is a methyl group and has 2 to 6 carbon atoms
- the alkenyl group of 10 is an ethenyl group, that is, a vinyl group, and 0.1% by mole to 50.0% by mole, preferably 0.5% by mole, of all substituents represented by R 1 to R 6 in which the alkenyl group is represented by R 1 to R 6 It can be 30.0 mol%, and the remaining R 1 to R 6 can be alkyl groups.
- the polyorganosiloxane (a2) is composed of an alkyl group having 1 to 10 carbon atoms and a hydrogen atom, the alkyl group having 1 to 10 carbon atoms is a methyl group, and the hydrogen atom forms a structure of Si-H Do.
- Hydrogen atom that is, 0.1 to 50.0 mol%, preferably 10.0 to 40.0 mol%, in all substituents represented by R 1 to R 6 in a hydrogen atom;
- the remaining R 1 to R 6 can be alkyl groups.
- the molar ratio of hydrogen atoms represented by the alkenyl group and the Si-H group is in the range of 2.0: 1.0, preferably 1.5: 1.0. Can be contained in
- the polyorganosiloxane (a1) and the polyorganosiloxane (a2) can be used in a weight average molecular weight of 500 to 1,000,000, or 5,000 to 50,000, respectively.
- Component (A) contains a platinum group metal catalyst (A2).
- a platinum-based metal catalyst is a catalyst for promoting the hydrosilylation addition reaction of an alkenyl group and a Si-H group, and is a reaction of platinum black, platinum chloride, platinum chloride acid, chloride acid and alcohol and monohydric alcohol.
- Platinum-based catalysts such as complexes of chloroplatinic acid and olefins, and platinum bisacetoacetate are used. Examples of complexes of platinum and olefins include complexes of divinyl tetramethyldisiloxane and platinum.
- the addition amount of the platinum catalyst can be added in the range of 1.0 to 50.0 ppm with respect to the total amount of the polyorganosiloxane (a1) and the polyorganosiloxane (a2).
- Component (A) can further add an alkynyl alcohol as an inhibitor (A3) to suppress the progress of the hydrosilylation reaction.
- an alkynyl alcohol as an inhibitor (A3) to suppress the progress of the hydrosilylation reaction.
- the inhibitor include 1-ethynyl-1-cyclohexanol and the like. These inhibitors can be added in the range of 1000.0 to 10000.0 ppm with respect to the polyorganosiloxane (a1) and the polyorganosiloxane (a2).
- the polyorganosiloxane used for the component (B) of this invention can use the combination of (b1) phenyl methyl siloxane unit structure or diphenyl siloxane unit structure, and (b2) dimethylsiloxane unit structure.
- the above (b1) contains a siloxane unit (D unit) represented by R 1 R 2 SiO 2/2 (wherein R 1 and R 2 are each bonded to a silicon atom by a Si—C bond), 1 is a phenyl group or an alkyl group having 1 to 10 carbon atoms (particularly preferably a methyl group), and R 2 is a phenyl group.
- D unit siloxane unit
- the above (b2) contains a siloxane unit (D unit) represented by R 1 R 2 SiO 2/2 (wherein R 1 and R 2 are each bonded to a silicon atom by a Si—C bond), 1 and R 2 each represent an alkyl group having 1 to 10 carbon atoms (in particular, a methyl group is preferable).
- D unit siloxane unit represented by R 1 R 2 SiO 2/2 (wherein R 1 and R 2 are each bonded to a silicon atom by a Si—C bond), 1 and R 2 each represent an alkyl group having 1 to 10 carbon atoms (in particular, a methyl group is preferable).
- the alkyl group is preferably a methyl group, and the phenyl group has a structure bonded to a silicon atom via a linking group or directly.
- the polyorganosiloxane used for the component (B) contains siloxane units (D units), but may contain Q units, M units and T units.
- D units siloxane units
- Q units Q units
- M units and T units a combination of D units, Q units and M units
- D unit, M unit and T unit a combination of D units, Q units and M units
- D unit, M unit and T unit the combination of D unit, Q unit, M unit and T unit, etc. may be mentioned.
- the weight average molecular weight of the component (B) is preferably in the range of 1,500 to 500,000, or 1,500 to 100,000.
- the ratio of component (A) to component (B) in the adhesive can be any ratio. Furthermore, in order to ensure good releasability, it is desirable that the component (B) is contained at 5 or more by mass%, and in order to maintain the mechanical properties of the adhesive, the component (B) is at most 70 by mass Is desirable.
- the ratio of component (A) to component (B) in the adhesive can be 95: 5 to 30:70 by mass%.
- a method of bonding a laminate in which the adhesive is applied on a first substrate to form an adhesive layer, the second substrate is bonded, and heating is performed from the first substrate side.
- the adhesive cures upon heating.
- a bonding method may be mentioned in which the first substrate is a support, the second substrate is a wafer, and the circuit surface of the wafer faces the first substrate.
- Another example is a bonding method in which the first substrate is a wafer, the second substrate is a support, and the circuit surface of the wafer faces the second substrate.
- Examples of the wafer include a silicon wafer having a diameter of about 300 mm and a thickness of about 770 ⁇ m.
- Examples of the support (carrier) include glass wafers and silicon wafers having a diameter of about 300 mm and a thickness of about 700 mm.
- the formation of the adhesive layer adheres the adhesive on the support, for example, by a spin coater to form an adhesive layer.
- the adhesive may be bonded so as to sandwich the adhesive between the support and the circuit surface of the wafer, and heated at a temperature of 120 to 260 ° C. to cure the adhesive, thereby forming a laminate.
- the adhesive is attached to the circuit surface with the back side of the wafer facing down by a spin coater to form an adhesive layer, and the support is bonded so as to sandwich the adhesive, and heated at a temperature of 120 to 260 ° C.
- the adhesive can then be cured to form a laminate.
- the curing of the adhesive starts from about 120 ° C., and the temperature may be 260 ° C. or higher, but it is preferably 260 ° C. or lower, for example 150 ° C. from the viewpoint of the heat resistance of the circuit surface (device surface) of the wafer.
- the temperature can be set to about ° C to 220 ° C, or about 190 ° C to 200 ° C.
- the heating time is preferably 1 minute or more from the viewpoint of bonding of the wafer by curing, and further preferably 5 minutes or more from the viewpoint of stabilization of the physical properties of the adhesive. For example, it can be 1 to 180 minutes, or 5 to 120 minutes.
- the apparatus may use a hot plate, an oven or the like.
- the adhesive can add a solvent for viscosity adjustment.
- Aliphatic hydrocarbons, aromatic hydrocarbons, ketones and the like can be used.
- the solvent is, for example, hexane, heptane, octane nonane, decane, undecane, dodecane, isododecane, mentane, limonene, toluene, xylene, methycylene, cumene, MIBK (methyl isobutyl ketone), butyl acetate, diisobutyl ketone, 2-octanone, 2-nonanone, 5-nonanone etc. can be used.
- a support and a wafer formed so as to sandwich the adhesive layer can combine these objects under reduced pressure (for example, reduced pressure of 10 Pa to 10000 Pa) to form a laminate.
- reduced pressure for example, reduced pressure of 10 Pa to 10000 Pa
- heating for example, 30 ° C. to 100 ° C.
- reduced pressure for example, 30 ° C. to 100 ° C.
- the adhesive is applied on a first substrate to form an adhesive layer, the second substrate is joined and heated, and the adhesive is cured to form a laminate, and then the laminate is processed to form a first substrate,
- a peeling method which causes peeling between the second substrate and the adhesive layer (the first substrate, the interface between the second substrate and the adhesive) may be mentioned.
- the above peeling method may be mentioned in which the first substrate is a support, the second substrate is a wafer, and the circuit surface of the wafer faces the first substrate.
- the above-mentioned peeling method may be mentioned in which the first substrate is a wafer, the second substrate is a support, and the circuit surface of the wafer faces the second substrate.
- the film thickness of the adhesive layer to which the above adhesive is applied can be 5 to 500 ⁇ m, 10 to 200 ⁇ m, 20 to 150 ⁇ m, 30 to 120 ⁇ m, or 30 to 70 ⁇ m.
- the processing on the opposite side of the circuit surface of the wafer includes thinning of the wafer by polishing. Thereafter, through silicon vias (TSVs) and the like are formed, and then the thinned wafer is peeled off from the support to form a laminated body of wafers, which is three-dimensionally mounted. In addition, the formation of a wafer back surface electrode and the like is also performed before and after that. While wafer thinning and TSV processes are heated to 250 to 350 ° C while bonded to a support, laminates as temporary adhesives used in the present invention have their heat resistance. There is.
- a wafer with a diameter of about 300 mm and a thickness of about 770 ⁇ m can be thinned to a thickness of about 80 ⁇ m to 4 ⁇ m by polishing the back surface opposite to the circuit surface.
- Peeling methods include solvent peeling, laser peeling, mechanical peeling with an apparatus having a sharp part, peeling between a support and a wafer, and the like.
- the resin When the resin remains on the surface of the wafer, the resin can be removed by solvent cleaning (dissolution, lift off), tape peeling, or the like.
- the present invention is a method of processing a laminate which is bonded by the above method and polished after the back surface of the wafer and then peeled off by the above method.
- Component (A) of Adhesive 22.49 kg of a base polymer (manufactured by Wacker Kemi Co., Ltd.) consisting of a vinyl group-containing linear polydimethylsiloxane having a viscosity of 200 mPa ⁇ s and a vinyl group-containing MQ resin as the polysiloxane (a1) 1.46 kg of SiH group-containing linear polydimethylsiloxane (made by Wacker Kemi) with a viscosity of 70 mPa ⁇ s as polysiloxane (a2), SiH group-containing linear polydimethylsiloxane with a viscosity of 100 mPa ⁇ s as polysiloxane (a2) 0.63 kg of Wacker Kemi Co., Ltd.
- a base polymer manufactured by Wacker Kemi Co., Ltd.
- (Adhesive 1) Component (A) 99% by mass of polyorganosiloxane (ratio of component (A) to component (A) in component (B-1)) and component (B-1) phenyl group-modified silicone (manufactured by Gelest, Inc., A mixture of 1 mass% (the ratio of the (A) component and the (B-1) component in the (B-1) component) under the trade name PMM-1043, weight average molecular weight 67000, viscosity 30,000 mm 2 / s -It mixed for 5 minutes with the revolution mixer (made by Shinky Co., Ltd. make, brand name ARE-500), and produced (adhesive 1).
- m and n indicate the number of repeating units.
- Adhesive 2 Component (A) 97.5% by mass of polyorganosiloxane (ratio of component (A) to component (A) in component (B-1)) and component (B-1) phenyl group-modified silicone (Gelest, Inc. Manufactured by trade name PMM-1043, weight average molecular weight 67000, viscosity 30,000 mm 2 / s) 2.5 mass% (proportion of (A) component and (B-1) component in (B-1) component) The resulting mixture was mixed for 5 minutes with an autorotation / revolution mixer (manufactured by Shinky Co., Ltd., trade name: ARE-500) to prepare (adhesive 2).
- an autorotation / revolution mixer manufactured by Shinky Co., Ltd., trade name: ARE-500
- (Adhesive 3) Component (A) 95% by mass of polyorganosiloxane (ratio of component (A) to component (A) in component (B-1)) and component (B-1) phenyl group-modified silicone (manufactured by Gelest, Inc., A mixture of 5 mass% (the ratio of the component (A) to the component (B-1) in the component (B-1)) under the trade name PMM-1043, weight average molecular weight 67000, viscosity 30,000 mm 2 / s -It mixed for 5 minutes with a revolution mixer (made by Shinky Co., Ltd. make, brand name ARE-500), and produced (adhesive 3).
- Adhesive 4 Component (A) 90% by mass of polyorganosiloxane (ratio of component (A) to component (A) in component (B-1)) and component (B-1) phenyl group-modified silicone (manufactured by Gelest, Inc., Product name PMM-1043, weight average molecular weight 67000, viscosity 30,000 mm 2 / s 10% by mass (ratio of component (A) and component (B-1) in component (B-1)) -It mixed for 5 minutes with the revolution mixer (made by Shinky Co., Ltd., brand name ARE-500), and produced (adhesive 4).
- Adhesive 5 Component (A) 85% by mass of polyorganosiloxane (ratio of component (A) to component (A) in component (B-1)) and component (B-1) phenyl group-modified silicone (manufactured by Gelest, Inc., Product name PMM-1043, weight average molecular weight 67000, viscosity 30,000 mm 2 / s 15% by mass (ratio of component (A) to component (B-1) in component (B-1)) -It mixed for 5 minutes with the revolution mixer (made by Shinky Co., Ltd. make, brand name ARE-500), and produced (adhesive 5).
- Adhesive 6 Component (A) 70% by mass of polyorganosiloxane (ratio of component (A) to component (A) in component (B-1)) and component (B-1) phenyl group-modified silicone (manufactured by Gelest, Inc., Product name PMM-1043, weight average molecular weight 67000, viscosity 30,000 mm 2 / s 30% by mass (ratio of component (A) to component (B-1) in component (B-1)) -It mixed for 5 minutes with the revolution mixer (made by Shinky Co., Ltd., brand name ARE-500), and produced (adhesive 6).
- (Adhesive 7) Component (A) 50% by mass of polyorganosiloxane (ratio of component (A) to component (A) in component (B-1)) and component (B-1) phenyl group-modified silicone (manufactured by Gelest, Inc., Product name PMM-1043, weight average molecular weight 67000, viscosity 30,000 mm 2 / s) 50% by mass (the ratio of the (A) component and the (B-1) component in the (B-1) component) -It mixed for 5 minutes with a revolution mixer (made by Shinky Co., Ltd. make, brand name ARE-500), and produced (adhesive 7).
- a revolution mixer made by Shinky Co., Ltd. make, brand name ARE-500
- (Adhesive 8) Component (A) 30% by mass of polyorganosiloxane (ratio of component (A) to component (A) in component (B-1)) and component (B-1) phenyl group-modified silicone (manufactured by Gelest, Inc., Product name PMM-1043, weight average molecular weight 67000, viscosity 30,000 mm 2 / s 70% by mass (ratio of component (A) and component (B-1) in component (B-1)) -It mixed for 5 minutes with a revolution mixer (made by Shinky Co., Ltd. make, brand name ARE-500), and produced (adhesive 8).
- a revolution mixer made by Shinky Co., Ltd. make, brand name ARE-500
- (Adhesive 9) Component (A) 85% by mass of polyorganosiloxane (ratio of component (A) to component (A) in component (B-2)) and component (B-2) phenyl group-modified silicone (manufactured by Gelest, Inc., Product name PMM-1025, weight average molecular weight 25200, viscosity 500mm 2 / s 15% by mass (ratio of (A) component and (B-2) component in (B-2) component) mixture of rotation and revolution The mixture was mixed for 5 minutes with a mixer (trade name: ARE-500, manufactured by Shinky Co., Ltd.) to prepare (adhesive 9).
- m and n indicate the number of repeating units.
- (Adhesive 10) Component (A) 85% by mass of polyorganosiloxane (ratio of component (A) to component (A) and component (A)) and component (B-3) phenyl group-modified silicone (Shin-Etsu Chemical Co., Ltd.) KF 50-3000CS, weight average molecular weight 39,400, viscosity 3000 mm 2 / s) 15 mass% (ratio of component (A) to component (B-3) in component (B-3))
- the mixture was mixed for 5 minutes with a revolution mixer (trade name: ARE-500, manufactured by Shinky Co., Ltd.) to prepare (adhesive 10).
- m and n indicate the number of repeating units.
- Adhesive 11 Component (A) 85% by mass of polyorganosiloxane (ratio of component (A) to component (A) in component (B-4)) and component (B-4) phenyl group-modified silicone (manufactured by MOMENTIVE, product name)
- a mixture consisting of TSF 431, weight average molecular weight 1800, viscosity 100 mm 2 / s, 15 mass% (proportion of (A) component and (B-4) component in (B-4) component) The mixture was mixed for 5 minutes under the trade name ARE-500, manufactured by Shinky Co., to prepare (adhesive 11).
- ARE-500 manufactured by Shinky Co.
- Adhesive 12 Component (A) 85% by mass of polyorganosiloxane (ratio of component (A) to component (A) in component (B-5)) and component (B-5) phenyl group-modified silicone (manufactured by MOMENTIVE, product name)
- Adhesive (Adhesive 12) was prepared by mixing for 5 minutes under the trade name ARE-500, manufactured by Shinky.
- ARE-500 trade name
- (Adhesive 13) Component (A) 85% by mass of polyorganosiloxane (ratio of component (A) to component (A) in component (B-6)) and component (B-6) phenyl group-modified silicone (manufactured by Gelest, Inc., Product name PDM-0421, weight average molecular weight 6200, viscosity 100 mm 2 / s 15% by mass (ratio of (A) component and (B-6) component in (B-6) component) a mixture consisting of rotation and revolution The mixture was mixed for 5 minutes with a mixer (trade name: ARE-500, manufactured by Shinky Co., Ltd.) to prepare (adhesive 13).
- m and n each represent the number of repeating units.
- (Adhesive 14) Component (A) 85% by mass of polyorganosiloxane (ratio of component (A) to component (A) in component (B-7)) and component (B-7) phenyl group-modified silicone (manufactured by Gelest, Inc., Product name PDM-0821, weight average molecular weight 8600, viscosity 125 mm 2 / s 15% by mass (ratio of (A) component and (B-7) component in (B-7) component) a mixture consisting of rotation and revolution The mixture was mixed for 5 minutes with a mixer (trade name: ARE-500, manufactured by Shinky Co., Ltd.) to prepare (adhesive 14).
- m and n represent the number of repeating units.
- Example 1 As a wafer on the device side, a 300 mm silicone wafer (thickness: 770 ⁇ m), and the above adhesive (1) to (8) by spin coating to form a temporary adhesive layer, each having a film thickness of about 50 ⁇ m. A film was formed on the surface to form the adhesive layers (1) to (8). A vacuum bonding apparatus (manual bonder, manufactured by Suse Microtech Co., Ltd.) so that the wafer having the adhesive layer and a 300 mm glass wafer (thickness: 700 ⁇ m) as a wafer (support) on the carrier side sandwich the adhesive layer. It stuck inside and produced the layered product.
- a vacuum bonding apparatus manufactured by Suse Microtech Co., Ltd.
- peeling occurs at the interface between the wafer on the device side and the adhesive layer, and when it is well controlled, it occurs at the interface between the wafer on the carrier side (support) and the adhesive layer, and when it is well controlled.
- Example 2 As a wafer on the device side, a 300 mm silicone wafer (thickness: 770 ⁇ m) was spin coated to form the above adhesive (5) with a film thickness of about 50 ⁇ m on the circuit surface of three wafers to form a temporary adhesive layer. The films were formed into adhesive layers (5-1) to (5-3), respectively.
- a vacuum bonding apparatus (manual bonder, manufactured by Suse Microtech Co., Ltd.) so that the wafer having the adhesive layer and a 300 mm glass wafer (thickness: 700 ⁇ m) as a wafer (support) on the carrier side sandwich the adhesive layer. It stuck inside and produced the layered product. Thereafter, heat treatment was performed at 200 ° C. for 10 minutes on a hot plate.
- peeling occurs at the interface between the wafer on the device side and the adhesive layer, and when it is well controlled, it occurs at the interface between the wafer on the carrier side (support) and the adhesive layer, and when it is well controlled.
- the "carrier" and the one that could not be peeled off was regarded as "poor".
- the adhesive layers (5-1) to (5-3) formed of the adhesive (5) showed good results in terms of peelability. Further, it was confirmed that the peeling interface was not changed by the heat treatment method performed at the time of curing of the adhesive, and that peeling was possible at the interface of the carrier and the adhesive.
- the above adhesive (5) is formed on the circuit surface of the wafer with a film thickness of about 100 ⁇ m by spin coating to form a temporary adhesive layer on a 300 mm silicon wafer (thickness: 770 ⁇ m) as a wafer on the device side.
- Adhesive layer (5-7).
- the laminates were produced in the following manner. Thereafter, heat treatment was performed at 200 ° C. for 10 minutes so that the device-side wafer was on the hot plate.
- peeling occurs at the interface between the wafer on the device side and the adhesive layer, and when it is well controlled, it occurs at the interface between the wafer on the carrier side (support) and the adhesive layer, and when it is well controlled.
- the "carrier” and the one that could not be peeled off was described as "x" as a defect.
- Example 4 The above adhesive (5) is formed on the circuit surface of four wafers with a film thickness of about 50 ⁇ m by spin coating to form a temporary adhesive layer on a 300 mm silicon wafer (thickness: 770 ⁇ m) as a wafer on the device side.
- the membranes were formed into adhesive layers (5-8) to (5-11), respectively.
- a vacuum bonding apparatus manufactured by Suse Microtech Co., Ltd.
- the laminates were produced in the following manner. After that, heat treatment was performed at 120 ° C., 150 ° C., 220 ° C., and 260 ° C. for 10 minutes so that the device-side wafer was on the hot plate.
- peeling occurs at the interface between the wafer on the device side and the adhesive layer, and when it is well controlled, it occurs at the interface between the wafer on the carrier side (support) and the adhesive layer, and when it is well controlled.
- the "carrier” and the one that could not be peeled off was described as "x" as a defect.
- Example 5 The above adhesive (5) and (9) to (14) with a thickness of about 50 ⁇ m are formed by spin coating to form a temporary adhesive layer on a 300 mm silicon wafer (thickness: 770 ⁇ m) as a wafer on the device side.
- the films were formed on the circuit surface of the wafer as adhesion layers (5-12) and (9) to (14), respectively.
- a vacuum bonding apparatus (manual bonder, manufactured by Suse Microtech Co., Ltd.) so as to sandwich the adhesive layer between the wafer having the adhesive layer and a 300 mm glass wafer (thickness: 700 ⁇ m) as a wafer on the carrier side (support) It stuck together inside and produced the layered product.
- Example 6 The above adhesive (5) is formed on the circuit surface of the wafer with a film thickness of about 50 ⁇ m by spin coating to form a temporary adhesive layer on a trimmed silicon wafer (thickness: 770 ⁇ m) of 300 mm as a wafer on the device side.
- the membrane was formed into an adhesive layer (5-13).
- a vacuum bonding device manufactured by Suse Microtech, Inc., so that the above-mentioned adhesive layer is sandwiched between the wafer having the adhesive layer and a 300 mm silicon wafer (thickness: 770 ⁇ m) as a wafer (support) on the carrier side. ) Pasted together to make a laminate.
- Example 7 Cleaning Test of Device Wafer As a wafer on the testing side of the device wafer, a temporary adhesive layer is formed on a global net 300 mm PI wafer (thickness: 770 ⁇ m, base: SiN + PI, scribe line: width 100 mm, 15 mm pitch)
- the adhesive (5) was formed on the circuit surface of the wafer with a thickness of about 50 ⁇ m by spin coating to form an adhesive layer (5-14).
- a vacuum bonding device (manual bonder, manufactured by Suse Microtech Co., Ltd.) so that the wafer having the adhesive layer and a 300 mm glass wafer (thickness: 770 ⁇ m) as a wafer (support) on the carrier side sandwich the adhesive layer. ) Pasted together to make a laminate.
- Example 8 As a wafer on the lift-off device side by tape, spin is used to form a temporary adhesive layer on 300 mm PI wafer (thickness: 770 ⁇ m, base: SiN + PI, scribe line: width 100 mm, 15 mm pitch)
- the above adhesive (5) was formed into a film of about 50 ⁇ m thick on the circuit surface of the wafer by coating to form an adhesive layer (5-15).
- a vacuum bonding device (manual bonder, manufactured by Suse Microtech Co., Ltd.) so that the wafer having the adhesive layer and a 300 mm glass wafer (thickness: 770 ⁇ m) as a wafer (support) on the carrier side sandwich the adhesive layer. ) Pasted together to make a laminate.
- an adhesive consisting only of the component (A) is applied to a thickness of about 50 ⁇ m to a 300 mm glass wafer (thickness: 770 ⁇ m) as a wafer on the carrier side (support), adhesive layer (A-1) ). Then, heat treatment was performed at 200 ° C. for 10 minutes.
- a terminal masking tape made by Nitto Denko Corporation, trade name N-
- the peeling test of the adhesive was carried out by the tape peeling method using 300). Attach the above tape to the adhesive surface of the carrier side wafer (support), peel off the tape from the carrier side wafer (support) at an angle in the range of 60 to 180 °, and the carrier side wafer (support) A test was conducted to separate the adhesive layers (5-15) and (A-1) from
- Example 9 Regeneration test of carrier wafer (support) with solvent As a wafer on the test device side of 300 nm PI wafer (thickness: 770 ⁇ m, base: SiN + PI, scribe line: width 100 mm, pitch 15 mm) manufactured by Globalnet Inc.
- the above-mentioned adhesive (5) was formed on the circuit surface of the wafer with a film thickness of about 50 ⁇ m by spin coating to form an adhesive layer (5-16).
- a vacuum bonding apparatus (manual bonder, manufactured by Suse Microtech Co., Ltd.) so that the wafer having the adhesive layer and a 300 mm glass wafer (thickness: 770 ⁇ m) as a wafer (support) on the carrier side sandwich the adhesive layer. It stuck together inside and produced the layered product.
- an adhesive consisting only of the component (A) is applied to a thickness of about 50 ⁇ m to a 300 mm glass wafer (thickness: 770 ⁇ m) as a wafer on the carrier side (support), adhesive layer (A-2) ). Then, heat treatment was performed at 200 ° C. for 10 minutes.
- the adhesive layer (5-16) remaining on the wafer on the carrier side (support), and (A-2) are made of Isoper-E (hydrocarbon solvent manufactured by Ando Parachemy Co., Ltd.) and Shellsol MC421 (Shell Chemicals Japan)
- the resultant was immersed in a hydrocarbon-based solvent (manufactured by Kabushiki Kaisha, Ltd.) to remove the adhesive layer with the solvent.
- the case where the adhesion layer was able to be removed by lift-off after immersion in a solvent was evaluated as good and indicated by “o”, and the case where removal by lift-off was not possible was indicated by “x”.
- Table 9 (Results of Example 9) ⁇ Isoper-E Shersol MC421 Adhesive layer (5-16) ⁇ ⁇ Adhesive layer (A-2) ⁇ ⁇ ⁇ ⁇
- the laminate according to the present invention has a temporary adhesive layer between the support (support substrate) and the wafer as an additive, and the adhesive forming the temporary adhesive layer is a polyorganosiloxane component cured by a hydrosilylation reaction, It contains an adhesive containing a phenyl group-containing polyorganosiloxane component as an additive.
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Abstract
Description
支持基板と半導体ウエハーとを接着性組成物で接着し、半導体ウエハーの裏面を研磨した後に接着剤をエッチング液で除去する方法(特許文献3参照)、並びに
支持体と半導体ウエハーを接着する接着層としては、アルケニル基含有オルガノポリシロキサンとヒドロシリル基含有オルガノポリシロキサンとを白金触媒で重合した重合層と、熱硬化性ポリシロキサンからなる重合層との組み合わせを含むウエハー加工体(特許文献4、特許文献5参照、特許文献6参照、特許文献7参照)、が開示されている。
ポリシロキサン(a1)として粘度200mPa・sのビニル基含有直鎖状ポリジメチルシロキサンとビニル基含有のMQ樹脂とからなるベースポリマー(ワッカーケミ社製)22.49kg、ポリシロキサン(a2)として粘度70mPa・sのSiH基含有直鎖状ポリジメチルシロキサン(ワッカーケミ社製)1.46kg、ポリシロキサン(a2)として粘度100mPa・sのSiH基含有直鎖状ポリジメチルシロキサン(ワッカーケミ社製)0.63kg、(A3)として1-エチニルシクロヘキサノール(ワッカーケミ社製、)63.5gを攪拌機(井上製作所製 プラネタリーミキサー)で40分間撹拌した。別途、(A2)として白金触媒(ワッカーケミ社製)30.4gとポリシロキサン(a1)として粘度1000mPa・sのビニル基含有直鎖状ポリジメチルシロキサン(ワッカーケミ社製)1.05kgをスリーワンモーター(新東科学社製)で30分間撹拌して得られた混合物0.98kgを、上記混合物に添加し、さらに40分間撹拌し、最後に5μmのPP(ポリプロピレン)フィルターでろ過し、接着剤の成分(A)を得た。
成分(A)ポリオルガノシロキサン99質量%((A)成分と(B-1)成分中の(A)成分の割合)と、成分(B-1)フェニル基変性シリコーン(Gelest,Inc.製、商品名PMM-1043、重量平均分子量67000、粘度30,000mm2/s)1質量%((A)成分と(B-1)成分中の(B-1)成分の割合)からなる混合物を自転・公転ミキサー(株式会社シンキー製、商品名ARE-500)にて5分間混合し(接着剤1)を作製した。
成分(A)ポリオルガノシロキサン97.5質量%((A)成分と(B-1)成分中の(A)成分の割合)と、成分(B-1)フェニル基変性シリコーン(Gelest,Inc.製、商品名PMM-1043、重量平均分子量67000、粘度30,000mm2/s)2.5質量%((A)成分と(B-1)成分中の(B-1)成分の割合)からなる混合物を自転・公転ミキサー(株式会社シンキー製、商品名ARE-500)にて5分間混合し(接着剤2)を作製した。
成分(A)ポリオルガノシロキサン95質量%((A)成分と(B-1)成分中の(A)成分の割合)と、成分(B-1)フェニル基変性シリコーン(Gelest,Inc.製、商品名PMM-1043、重量平均分子量67000、粘度30,000mm2/s)5質量%((A)成分と(B-1)成分中の(B-1)成分の割合)からなる混合物を自転・公転ミキサー(株式会社シンキー製、商品名ARE-500)にて5分間混合し(接着剤3)を作製した。
成分(A)ポリオルガノシロキサン90質量%((A)成分と(B-1)成分中の(A)成分の割合)と、成分(B-1)フェニル基変性シリコーン(Gelest,Inc.製、商品名PMM-1043、重量平均分子量67000、粘度30,000mm2/s)10質量%((A)成分と(B-1)成分中の(B-1)成分の割合)からなる混合物を自転・公転ミキサー(株式会社シンキー製、商品名ARE-500)にて5分間混合し(接着剤4)を作製した。
成分(A)ポリオルガノシロキサン85質量%((A)成分と(B-1)成分中の(A)成分の割合)と、成分(B-1)フェニル基変性シリコーン(Gelest,Inc.製、商品名PMM-1043、重量平均分子量67000、粘度30,000mm2/s)15質量%((A)成分と(B-1)成分中の(B-1)成分の割合)からなる混合物を自転・公転ミキサー(株式会社シンキー製、商品名ARE-500)にて5分間混合し(接着剤5)を作製した。
成分(A)ポリオルガノシロキサン70質量%((A)成分と(B-1)成分中の(A)成分の割合)と、成分(B-1)フェニル基変性シリコーン(Gelest,Inc.製、商品名PMM-1043、重量平均分子量67000、粘度30,000mm2/s)30質量%((A)成分と(B-1)成分中の(B-1)成分の割合)からなる混合物を自転・公転ミキサー(株式会社シンキー製、商品名ARE-500)にて5分間混合し(接着剤6)を作製した。
成分(A)ポリオルガノシロキサン50質量%((A)成分と(B-1)成分中の(A)成分の割合)と、成分(B-1)フェニル基変性シリコーン(Gelest,Inc.製、商品名PMM-1043、重量平均分子量67000、粘度30,000mm2/s)50質量%((A)成分と(B-1)成分中の(B-1)成分の割合)からなる混合物を自転・公転ミキサー(株式会社シンキー製、商品名ARE-500)にて5分間混合し(接着剤7)を作製した。
成分(A)ポリオルガノシロキサン30質量%((A)成分と(B-1)成分中の(A)成分の割合)と、成分(B-1)フェニル基変性シリコーン(Gelest,Inc.製、商品名PMM-1043、重量平均分子量67000、粘度30,000mm2/s)70質量%((A)成分と(B-1)成分中の(B-1)成分の割合)からなる混合物を自転・公転ミキサー(株式会社シンキー製、商品名ARE-500)にて5分間混合し(接着剤8)を作製した。
成分(A)ポリオルガノシロキサン85質量%((A)成分と(B-2)成分中の(A)成分の割合)と、成分(B-2)フェニル基変性シリコーン(Gelest,Inc.製、商品名PMM-1025、重量平均分子量25200、粘度500mm2/s)15質量%((A)成分と(B-2)成分中の(B-2)成分の割合)からなる混合物を自転・公転ミキサー(株式会社シンキー製、商品名ARE-500)にて5分間混合し(接着剤9)を作製した。
成分(A)ポリオルガノシロキサン85質量%((A)成分と(B-3)成分中の(A)成分の割合)と、成分(B-3)フェニル基変性シリコーン(信越化学工業株式会社製、商品名KF50-3000CS、重量平均分子量39400、粘度3000mm2/s)15質量%((A)成分と(B-3)成分中の(B-3)成分の割合)からなる混合物を自転・公転ミキサー(株式会社シンキー製、商品名ARE-500)にて5分間混合し(接着剤10)を作製した。
成分(A)ポリオルガノシロキサン85質量%((A)成分と(B-4)成分中の(A)成分の割合)と、成分(B-4)フェニル基変性シリコーン(MOMENTIVE社製、商品名TSF431、重量平均分子量1800、粘度100mm2/s)15質量%((A)成分と(B-4)成分中の(B-4)成分の割合)からなる混合物を自転・公転ミキサー(株式会社シンキー製、商品名ARE-500)にて5分間混合し(接着剤11)を作製した。
成分(A)ポリオルガノシロキサン85質量%((A)成分と(B-5)成分中の(A)成分の割合)と、成分(B-5)フェニル基変性シリコーン(MOMENTIVE社製、商品名TSF433、重量平均分子量3000、粘度450mm2/s)15質量%((A)成分と(B-5)成分中の(B-5)成分の割合)からなる混合物を自転・公転ミキサー(株式会社シンキー製、商品名ARE-500)にて5分間混合し(接着剤12)を作製した。
成分(A)ポリオルガノシロキサン85質量%((A)成分と(B-6)成分中の(A)成分の割合)と、成分(B-6)フェニル基変性シリコーン(Gelest,Inc.製、商品名PDM-0421、重量平均分子量6200、粘度100mm2/s)15質量%((A)成分と(B-6)成分中の(B-6)成分の割合)からなる混合物を自転・公転ミキサー(株式会社シンキー製、商品名ARE-500)にて5分間混合し(接着剤13)を作製した。
成分(A)ポリオルガノシロキサン85質量%((A)成分と(B-7)成分中の(A)成分の割合)と、成分(B-7)フェニル基変性シリコーン(Gelest,Inc.製、商品名PDM-0821、重量平均分子量8600、粘度125mm2/s)15質量%((A)成分と(B-7)成分中の(B-7)成分の割合)からなる混合物を自転・公転ミキサー(株式会社シンキー製、商品名ARE-500)にて5分間混合し(接着剤14)を作製した。
デバイス側のウエハーとして300mmのシリコーンウエハー(厚さ:770μm)に、仮接着層を形成させるためにスピンコートにて上記接着剤(1)~(8)をそれぞれ約50μmの膜厚でウエハーの回路面に成膜し、それぞれの接着層(1)~(8)とした。ここの接着層を有するウエハーと、キャリア側のウエハー(支持体)として300mmガラスウエハー(厚さ:700μm)を、上記接着層を挟むように真空貼り合せ装置(ズースマイクロテック社製、マニュアルボンダー)内で貼り合せ、積層体を作製した。
〔表1〕
表1(実施例1の結果)
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接着性 耐熱性 剥離性 剥離界面
接着層(1) ○ ○ × -
接着層(2) ○ ○ × -
接着層(3) ○ ○ 26N キャリア
接着層(4) ○ ○ 23N キャリア
接着層(5) ○ ○ 20N キャリア
接着層(6) ○ ○ 19N キャリア
接着層(7) ○ ○ 20N キャリア
接着層(8) ○ ○ 20N キャリア
―――――――――――――――――――――――――――――――――
デバイス側のウエハーとして300mmのシリコーンウエハー(厚さ:770μm)に、仮接着層を形成させるためにスピンコートにて上記接着剤(5)を約50μmの膜厚で三つウエハーの回路面に成膜し、それぞれ接着層(5-1)~(5-3)とした。ここの接着層を有するウエハーと、キャリア側のウエハー(支持体)として300mmガラスウエハー(厚さ:700μm)を、上記接着層を挟むように真空貼り合せ装置(ズースマイクロテック社製、マニュアルボンダー)内で貼り合せ、積層体を作製した。その後、ホットプレート上で200℃で10分間の加熱処理を行った。この際、デバイス側ウエハーを下にして加熱処理したものを「デバイス」と表記し、キャリア側ウエハー(支持体)を下にして加熱処理したものを「キャリア」と表記した。また加熱処理をイナートガスオーブン(エスペック社製)を使用して200℃で10分間行ったものを「オーブン」と表記した。
〔表2〕
表2(実施例2の結果)
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加熱処理面 剥離性 剥離界面
接着層(5-1) デバイス 20N キャリア
接着層(5-2) キャリア 17N キャリア
接着層(5-3) オーブン 18N キャリア
―――――――――――――――――――――――――――――――――
デバイス側のウエハーとして300mmのシリコンウエハー(厚さ:770μm)に、仮接着層を形成するためにスピンコートにて上記接着剤(5)を約100μmの膜厚でウエハーの回路面に成膜し、接着層(5-7)とした。この接着層を有するウエハーと、キャリア側のウエハー(支持体)として300mmガラスウエハー(厚さ:700μm)を、上記接着層を挟むように真空貼り合わせ装置(ズースマイクロテック社製、マニュアルボンダー)内で貼り合わせ、積層体を作製した。その後、ホットプレート上でデバイス側ウエハーが下となるように200℃で10分間、加熱処理を実施した。
〔表3〕
表3(実施例3の結果)
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仮接着層の膜厚 剥離性 剥離界面
接着層(5-1) 50μm 20N キャリア
接着層(5-7) 100μm 23N キャリア
―――――――――――――――――――――――――――――――――
デバイス側のウエハーとして300mmのシリコンウエハー(厚さ:770μm)に、仮接着層を形成するためにスピンコートにて上記接着剤(5)を約50μmの膜厚で四つのウエハーの回路面に成膜し、それぞれ接着層(5-8)~(5-11)とした。この接着層を有するウエハーと、キャリア側のウエハー(支持体)として300mmガラスウエハー(厚さ:700μm)で上記接着剤層を挟むように真空貼り合わせ装置(ズースマイクロテック社製、マニュアルボンダー)内で貼り合わせ、積層体を作製した。その後、ホットプレート上でデバイス側ウエハーが下となるようにそれぞれ120℃、150℃、220℃、260℃で10分間、加熱処理を実施した。
〔表4〕
表4(実施例4の結果)
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加熱処理温度 剥離性 剥離界面
接着層(5-8) 120℃ 17N キャリア
接着層(5-9) 150℃ 17N キャリア
接着層(5-10) 220℃ 18N キャリア
接着層(5-11) 260℃ 21N キャリア
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デバイス側のウエハーとして300mmのシリコンウエハー(厚さ:770μm)に、仮接着層を形成するためにスピンコートにてそれぞれ上記接着剤(5)、(9)~(14)を約50μmの膜厚でウエハーの回路面に成膜し、それぞれ接着層(5-12)、(9)~(14)とした。ここの接着層を有するウエハーと、キャリア側のウエハー(支持体)として300mmガラスウエハー(厚さ:700μm)を、上記接着層を挟むように真空貼り合わせ装置(ズースマイクロテック社製、マニュアルボンダー)内で貼り合わせ、積層体を作製した。
〔表5〕
表5(実施例5の結果)
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接着性 耐熱性 剥離性 剥離界面
接着層(5-12) ○ ○ 20N キャリア
接着層(9) ○ ○ 32N キャリア
接着層(10) ○ ○ 30N キャリア
接着層(11) ○ ○ × -
接着層(12) ○ ○ × -
接着層(13) ○ ○ × -
接着層(14) ○ ○ × -
―――――――――――――――――――――――――――――――――
デバイス側のウエハーとして300mmのトリムシリコンウエハー(厚さ:770μm)に、仮接着層を形成するためにスピンコートにて上記の接着剤(5)を約50μmの膜厚でウエハーの回路面に成膜し、接着層(5-13)とした。ここの接着層を有するウエハーと、キャリア側のウエハー(支持体)として300mmのシリコンウエハー(厚さ:770μm)を、上記接着層を挟むように真空貼り合わせ装置(ズースマイクロテック社製、マニュアルボンダー)内で貼り合わせ、積層体を作製した。
〔表6〕
表6(実施例6の結果)
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チッピング
接着層(5-13) ○
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デバイス側のウエハーとしてグローバルネット株式会社製300mmPIウエハー(厚さ:770μm、下地:SiN+PI、スクライブライン:幅100mm、15mmピッチ)に、仮接着層を形成するためにスピンコートにて上記接着剤(5)を約50μmの膜厚でウエハーの回路面に成膜し、接着層(5-14)とした。ここの接着層を有するウエハーと、キャリア側のウエハー(支持体)として300mmのガラスウエハー(厚さ:770μm)を、上記接着層を挟むように真空貼り合わせ装置(ズースマイクロテック社製、マニュアルボンダー)内で貼り合わせ、積層体を作製した。
〔表7〕
表7(実施例7の結果)
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洗浄試験
接着層(5-14) ○
―――――――――――――――――――――――――――――――――
デバイス側のウエハーとしてグローバルネット株式会社製300mmPIウエハー(厚さ:770μm、下地:SiN+PI、スクライブライン:幅100mm、15mmピッチ)に、仮接着層を形成するためにスピンコートにて上記の接着剤(5)を約50μmの膜厚でウエハーの回路面に成膜し、接着層(5-15)とした。ここの接着層を有するウエハーと、キャリア側のウエハー(支持体)として300mmのガラスウエハー(厚さ:770μm)を、上記接着層を挟むように真空貼り合わせ装置(ズースマイクロテック社製、マニュアルボンダー)内で貼り合わせ、積層体を作製した。
〔表8〕
表8(実施例8の結果)
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テープピーリング試験
接着層(5-15) ○
接着層(A-1) ×
―――――――――――――――――――――――――――――――――
デバイス側のウエハーとしてグローバルネット株式会社製300mmPIウエハー(厚さ:770μm、下地:SiN+PI、スクライブライン:幅100mm、15mmピッチ)に、仮接着層を形成するためにスピンコートにて上記接着剤(5)を約50μmの膜厚でウエハーの回路面に成膜し、接着層(5-16)とした。この接着層を有するウエハーと、キャリア側のウエハー(支持体)として300mmのガラスウエハー(厚さ:770μm)を、上記接着層を挟むように真空貼り合わせ装置(ズースマイクロテック社製、マニュアルボンダー)内で貼り合わせ、積層体を作製した。
〔表9〕
表9(実施例9の結果)
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Isoper‐E シェルゾールMC421
接着層(5-16) ○ ○
接着層(A-2) × ×
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Claims (14)
- 支持体とウエハーの回路面との間で剥離可能に接着し、ウエハーの裏面を加工するための接着剤であり、前記接着剤がヒドロシリル化反応により硬化する成分(A)と、フェニル基含有ポリオルガノシロキサンとを含む成分(B)とを含み、成分(A)と成分(B)の質量%が95:5~30:70の割合である前記接着剤。
- 前記成分(A)が、SiO2で表されるシロキサン単位(Q単位)、R1R2R3SiO1/2で表されるシロキサン単位(M単位)、R4R5SiO2/2で表されるシロキサン単位(D単位)、及びR6SiO3/2で表されるシロキサン単位(T単位)からなる群より選ばれるポリシロキサン(但しR1乃至R6はそれぞれSi-C結合又はSi-H結合によりケイ素原子に結合しているものである。)を含み、R1乃至R6で示される1価化学基がそれぞれ炭素原子数1~10のアルキル基と炭素原子数2~10のアルケニル基を含むポリオルガノシロキサン(a1)と、R1乃至R6で示される1価化学基がそれぞれ炭素原子数1~10のアルキル基と水素原子を含むポリオルガノシロキサン(a2)とを含むポリシロキサン(A1)と、白金族金属系触媒(A2)とを含むものである請求項1に記載の接着剤。
- 前記成分 (B)が、(b1)フェニルメチルシロキサン単位構造又はジフェニルシロキサン単位構造と、(b2)ジメチルシロキサン単位構造との組み合わせである請求項1又は請求項2に記載の接着剤。
- 前記加工が前記ウエハーの裏面研磨である請求項1乃至請求項3のいずれか1項に記載の接着剤。
- 第一基体上に請求項1乃至請求項4のいずれか1項に記載の接着剤を塗布し接着層を形成し、第二基体を接合し、前記第一基体側から加熱する積層体の接合方法。
- 前記第一基体が支持体であり、前記第二基体がウエハーであり、前記ウエハーの回路面が前記第一基体と向き合うものである請求項5に記載の接合方法。
- 前記第一基体がウエハーであり、前記第二基体が支持体であり、前記ウエハーの回路面が前記第二基体と向き合うものである請求項5に記載の接合方法。
- 第一基体上に請求項1乃至請求項3のいずれか1項に記載の接着剤を塗布し接着層を形成し、第二基体を接合し、前記第一基体側から加熱し前記接着剤を硬化させ積層体を形成した後に、前記積層体を加工し、前記第一基体、前記第二基体と前記接着層の間で剥離を生じる剥離方法。
- 第一基体上に請求項4に記載の接着剤を塗布し接着層を形成し、第二基体を接合し、前記第一基体側から加熱し前記接着剤を硬化させ積層体を形成した後に、前記積層体を加工し、前記第一基体、前記第二基体と前記接着層の間で剥離を生じる剥離方法。
- 前記第一基体が支持体であり、前記第二基体がウエハーであり、前記ウエハーの回路面が前記第一基体と向き合うものである請求項8に記載の剥離方法。
- 前記第一基体が支持体であり、前記第二基体がウエハーであり、前記ウエハーの回路面が前記第一基体と向き合うものである請求項9に記載の剥離方法。
- 前記第一基体がウエハーであり、前記第二基体が支持体であり、前記ウエハーの回路面が前記第二基体と向き合うものである請求項8に記載の剥離方法。
- 前記第一基体がウエハーであり、前記第二基体が支持体であり、前記ウエハーの回路面が前記第二基体と向き合うものである請求項9に記載の剥離方法。
- 前記加工が前記ウエハーの裏面研磨である請求項8、10、12のいずれか1項に記載の剥離方法。
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Also Published As
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TWI778093B (zh) | 2022-09-21 |
JP7168916B2 (ja) | 2022-11-10 |
US20200216731A1 (en) | 2020-07-09 |
KR20200026895A (ko) | 2020-03-11 |
JPWO2019009365A1 (ja) | 2020-04-30 |
SG11202000059QA (en) | 2020-02-27 |
CN110870049B (zh) | 2023-10-03 |
US11345837B2 (en) | 2022-05-31 |
EP3651186A4 (en) | 2021-03-17 |
KR102520889B1 (ko) | 2023-04-12 |
CN110870049A (zh) | 2020-03-06 |
TW201920582A (zh) | 2019-06-01 |
EP3651186A1 (en) | 2020-05-13 |
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