JP5727382B2 - ウェーハを含む層システムを分離する方法 - Google Patents

ウェーハを含む層システムを分離する方法 Download PDF

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Publication number
JP5727382B2
JP5727382B2 JP2011542832A JP2011542832A JP5727382B2 JP 5727382 B2 JP5727382 B2 JP 5727382B2 JP 2011542832 A JP2011542832 A JP 2011542832A JP 2011542832 A JP2011542832 A JP 2011542832A JP 5727382 B2 JP5727382 B2 JP 5727382B2
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separation
carrier
layer
wafer
layer system
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JP2012513684A5 (enExample
JP2012513684A (ja
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フランツ リヒター
フランツ リヒター
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シン マテリアルズ アクチェンゲゼルシャフト
シン マテリアルズ アクチェンゲゼルシャフト
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • H10P72/7442—Separation by peeling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • H10P72/7442—Separation by peeling
    • H10P72/7444—Separation by peeling using a peeling wedge, a knife or a bar
JP2011542832A 2008-12-23 2009-12-23 ウェーハを含む層システムを分離する方法 Active JP5727382B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102008055155.4 2008-12-23
DE102008055155.4A DE102008055155B4 (de) 2008-12-23 2008-12-23 Trennverfahren für ein Schichtsystem umfassend einen Wafer, Verwendung einer Polymethacrylatscheibe bei dem Verfahren und Vorrichtung zum Durchführen des Verfahrens
EP09151661A EP2202788A3 (de) 2008-12-23 2009-01-29 Trennverfahren für ein Schichtsystem umfassend einen Wafer
EP09151661.7 2009-01-29
PCT/EP2009/067893 WO2010072826A2 (de) 2008-12-23 2009-12-23 Trennverfahren für ein schichtsystem umfassend einen wafer

Publications (3)

Publication Number Publication Date
JP2012513684A JP2012513684A (ja) 2012-06-14
JP2012513684A5 JP2012513684A5 (enExample) 2015-03-19
JP5727382B2 true JP5727382B2 (ja) 2015-06-03

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JP2011542832A Active JP5727382B2 (ja) 2008-12-23 2009-12-23 ウェーハを含む層システムを分離する方法

Country Status (9)

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US (1) US8951886B2 (enExample)
EP (2) EP2202788A3 (enExample)
JP (1) JP5727382B2 (enExample)
KR (1) KR101754327B1 (enExample)
CN (1) CN102326245B (enExample)
DE (1) DE102008055155B4 (enExample)
PT (1) PT2382656T (enExample)
SG (1) SG172283A1 (enExample)
WO (1) WO2010072826A2 (enExample)

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CN105607311B (zh) * 2016-01-04 2020-06-02 京东方科技集团股份有限公司 起角装置及其使用方法
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US10763135B2 (en) * 2018-01-30 2020-09-01 Facebook Technologies, Llc Integrated elastomeric interface layer formation and singulation for light emitting diodes
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WO2020100965A1 (ja) 2018-11-16 2020-05-22 日産化学株式会社 積層体の剥離方法、積層体及び積層体の製造方法
TWI837219B (zh) 2018-11-16 2024-04-01 日商日產化學股份有限公司 紅外線剝離用接著劑組成物、積層體、積層體之製造方法及剝離方法
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Also Published As

Publication number Publication date
EP2382656B1 (de) 2018-10-03
CN102326245B (zh) 2017-04-19
EP2202788A3 (de) 2010-08-04
SG172283A1 (en) 2011-07-28
WO2010072826A3 (de) 2010-10-14
US8951886B2 (en) 2015-02-10
US20120028438A1 (en) 2012-02-02
PT2382656T (pt) 2019-01-17
DE102008055155A1 (de) 2010-07-01
WO2010072826A2 (de) 2010-07-01
CN102326245A (zh) 2012-01-18
KR101754327B1 (ko) 2017-07-19
DE102008055155B4 (de) 2026-07-30
EP2202788A2 (de) 2010-06-30
JP2012513684A (ja) 2012-06-14
KR20110128174A (ko) 2011-11-28
EP2382656A2 (de) 2011-11-02

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