JP5727382B2 - ウェーハを含む層システムを分離する方法 - Google Patents

ウェーハを含む層システムを分離する方法 Download PDF

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Publication number
JP5727382B2
JP5727382B2 JP2011542832A JP2011542832A JP5727382B2 JP 5727382 B2 JP5727382 B2 JP 5727382B2 JP 2011542832 A JP2011542832 A JP 2011542832A JP 2011542832 A JP2011542832 A JP 2011542832A JP 5727382 B2 JP5727382 B2 JP 5727382B2
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Prior art keywords
separation
carrier
layer
wafer
layer system
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Japanese (ja)
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JP2012513684A (ja
JP2012513684A5 (enExample
Inventor
フランツ リヒター
フランツ リヒター
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シン マテリアルズ アクチェンゲゼルシャフト
シン マテリアルズ アクチェンゲゼルシャフト
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling
    • H01L2221/6839—Separation by peeling using peeling wedge or knife or bar

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2011542832A 2008-12-23 2009-12-23 ウェーハを含む層システムを分離する方法 Active JP5727382B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102008055155.4 2008-12-23
DE102008055155A DE102008055155A1 (de) 2008-12-23 2008-12-23 Trennverfahren für ein Schichtsystem umfassend einen Wafer
EP09151661A EP2202788A3 (de) 2008-12-23 2009-01-29 Trennverfahren für ein Schichtsystem umfassend einen Wafer
EP09151661.7 2009-01-29
PCT/EP2009/067893 WO2010072826A2 (de) 2008-12-23 2009-12-23 Trennverfahren für ein schichtsystem umfassend einen wafer

Publications (3)

Publication Number Publication Date
JP2012513684A JP2012513684A (ja) 2012-06-14
JP2012513684A5 JP2012513684A5 (enExample) 2015-03-19
JP5727382B2 true JP5727382B2 (ja) 2015-06-03

Family

ID=42097506

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011542832A Active JP5727382B2 (ja) 2008-12-23 2009-12-23 ウェーハを含む層システムを分離する方法

Country Status (9)

Country Link
US (1) US8951886B2 (enExample)
EP (2) EP2202788A3 (enExample)
JP (1) JP5727382B2 (enExample)
KR (1) KR101754327B1 (enExample)
CN (1) CN102326245B (enExample)
DE (1) DE102008055155A1 (enExample)
PT (1) PT2382656T (enExample)
SG (1) SG172283A1 (enExample)
WO (1) WO2010072826A2 (enExample)

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CN103972133B (zh) * 2013-01-25 2017-08-25 旭硝子株式会社 基板的剥离装置和剥离方法以及电子器件的制造方法
JP6180811B2 (ja) * 2013-06-19 2017-08-16 株式会社荏原製作所 基板処理装置
KR20150011072A (ko) 2013-07-22 2015-01-30 삼성전자주식회사 임시 접착제 조성물 및 이를 이용한 반도체 소자의 제조 방법
US10103048B2 (en) * 2013-08-28 2018-10-16 Brewer Science, Inc. Dual-layer bonding material process for temporary bonding of microelectronic substrates to carrier substrates
US9315696B2 (en) 2013-10-31 2016-04-19 Dow Global Technologies Llc Ephemeral bonding
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WO2015190438A1 (ja) 2014-06-10 2015-12-17 日産化学工業株式会社 仮接着剤を用いた積層体
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CN105607311B (zh) * 2016-01-04 2020-06-02 京东方科技集团股份有限公司 起角装置及其使用方法
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TW202428830A (zh) 2018-11-16 2024-07-16 日商日產化學股份有限公司 紅外線剝離用接著劑組成物、積層體、積層體之製造方法及剝離方法
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Also Published As

Publication number Publication date
EP2202788A3 (de) 2010-08-04
EP2382656A2 (de) 2011-11-02
CN102326245B (zh) 2017-04-19
KR101754327B1 (ko) 2017-07-19
DE102008055155A1 (de) 2010-07-01
JP2012513684A (ja) 2012-06-14
WO2010072826A2 (de) 2010-07-01
EP2382656B1 (de) 2018-10-03
EP2202788A2 (de) 2010-06-30
WO2010072826A3 (de) 2010-10-14
US8951886B2 (en) 2015-02-10
CN102326245A (zh) 2012-01-18
PT2382656T (pt) 2019-01-17
KR20110128174A (ko) 2011-11-28
SG172283A1 (en) 2011-07-28
US20120028438A1 (en) 2012-02-02

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