JP2018518046A - ビーム放射型のオプトエレクトロニクス素子 - Google Patents
ビーム放射型のオプトエレクトロニクス素子 Download PDFInfo
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- JP2018518046A JP2018518046A JP2017556672A JP2017556672A JP2018518046A JP 2018518046 A JP2018518046 A JP 2018518046A JP 2017556672 A JP2017556672 A JP 2017556672A JP 2017556672 A JP2017556672 A JP 2017556672A JP 2018518046 A JP2018518046 A JP 2018518046A
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Abstract
Description
A)素子の動作時に一次ビームを放射するように構成されている半導体チップを準備するステップ、
B)Crイオンおよび/またはNiイオンと、金属酸化物、金属ハロゲン化物、金属窒化物、金属酸窒化物およびそれらの組合せを含む化合物のグループから選択されているホスト材料と、を含む変換材料を含有している変換素子を製造するステップ、
C)素子の動作時に半導体チップから放射される一次ビームを、700nmから1,100nmの間の波長の二次ビームに変換するように構成されている変換素子を、半導体チップの上に設けるステップ。
BB)変換材料を製造するステップ、
を含んでいる。
BB1)出発材料を混合するステップ、
BB2)上記のBB1)において得られた混合物を、700℃から1,500℃の間の温度でか焼するステップ、
を含んでいる。
BB3)上記の方法ステップBB2)において得られた粉末を碾いて篩に掛けるステップ、
が行われる。有利には、この方法ステップは、粉末が室温まで冷却された後に行われる。
BB4)上記のBB3)において得られた粉末を、700℃から1,500℃の間の温度でか焼するステップ、
を行うことができる。
BB5)上記の方法ステップBB4)において得られた粉末を碾いて篩に掛けるステップ、
を行うことができる。有利には、この方法ステップは、粉末が室温まで冷却された後に行われる。
BB6)上記の方法ステップBB3)または方法ステップBB5)において得られた粉末を焼結させて、セラミックに、特に変換材料から成るプレートにするステップ、
が行われる。
BB7)上記の方法ステップBB3)または方法ステップBB5)において得られた粉末をマトリクス材料と混合するステップ、
が行われる。
2 半導体チップ
4 第1の端子
5 第2の電気的な端子
6 変換素子
9 活性エピタキシャル層列
10 ベースケーシング
11 凹部
12,13 ビーム透過性のエンベロープ
15 背面コンタクト
16 前面コンタクト
17 ボンディングワイヤ
18 反射器
21 レンズ状のカバー
λ 波長
nm ナノメートル
μm マイクロメートル
I 5mAの電流強度における相対強度
II 1,000mAの電流強度における相対強度
A,B,C,D,E,F,G,H,J,K,L,M,N 放射の相対強度
SLD スペクトル電力密度
wt% 重量パーセント
Claims (16)
- ビーム放射型のオプトエレクトロニクス素子(1)において、
前記素子の動作時に一次ビームを放射する半導体チップ(2)と、
変換材料を含有している変換素子(6)と、
を含んでおり、
前記変換材料は、Crイオンおよび/またはNiイオンおよびホスト材料を含有しており、かつ前記素子の動作時に前記半導体チップから放射される前記一次ビームを、700nm〜2,000nmの間の波長の二次ビームに変換し、
前記ホスト材料は、EAGa12O19,AyGa5O(15+y)/2,AE3Ga2Ge4O14,Ln3Ga5GeO14,Ga2O3,Ln3Ga5.5D0.5O14およびMg4D2O9、ただしEA=Mg,Ca,Srおよび/またはBa、A=Li,Na,Kおよび/またはRb、AE=Mg,Ca,Srおよび/またはBa、Ln=La,Ce,Pr,Nd,Pm,Sm,Eu,Gd,Tb,Dy,Ho,Er,Tm,Ybおよび/またはLu、およびD=Nbおよび/またはTa、かつy=0.9〜1.9、を含む化合物のグループから選択されている、
ビーム放射型のオプトエレクトロニクス素子(1)。 - 前記変換材料は、Cr3+イオンおよび/またはNi2+イオンを含有している、
請求項1記載のビーム放射型のオプトエレクトロニクス素子(1)。 - 前記Crイオンおよび/またはNiイオンは、前記ホスト材料の金属に部分的に置き換わる、
請求項1または2記載のビーム放射型のオプトエレクトロニクス素子(1)。 - 前記Crイオンおよび/またはNiイオンは、前記ホスト材料の金属の0.01mol%〜10mol%置き換わる、
請求項3記載のビーム放射型のオプトエレクトロニクス素子(1)。 - ビーム放射型のオプトエレクトロニクス素子(1)において、
前記素子の動作時に、400nm〜500nmの間の一次ビームを放射する半導体チップ(2)と、
変換材料を含有している変換素子(6)と、
を含んでおり、
前記変換材料は、前記素子の動作時に前記半導体チップ(2)から放射される前記一次ビームを、700nm〜2,000nmの間の波長の二次ビームに変換し、
前記ホスト材料は、金属酸化物、金属ハロゲン化物、金属窒化物、金属酸窒化物およびそれらの組合せを含む化合物のグループから選択されている、
ビーム放射型のオプトエレクトロニクス素子(1)。 - 前記変換材料は、前記素子の動作時に前記半導体チップから放射される前記一次ビームを、700nm〜1,100nmの間の波長の二次ビームに変換する、
請求項1から5までのいずれか1項記載のビーム放射型のオプトエレクトロニクス素子(1)。 - 前記変換材料は、Ay(Ga1-xNix)5O[(15+y)/2]-2.5x,AE3(Ga1-xNix)2Ge4O14-x,Ln3(Ga1-xNix)5GeO(28-5x)/2,(Ga1-xNix)2O3-x,Ln6(Ga1-xNix)11DO28-5.5x,(Mg1-xNix)4D2O9およびそれらの組合せ、ただしx=0.0001〜0.1、y=0.9〜1.9、A=Li,Na,Kおよび/またはRb、AE=Mg,Ca,Srおよび/またはBa、Ln=La,Ce,Pr,Nd,Pm,Sm,Eu,Gd,Tb,Dy,Ho,Er,Tm,Ybおよび/またはLuかつD=Nbおよび/またはTa、を含む化合物のグループから選択されている、
請求項1から6までのいずれか1項記載のビーム放射型のオプトエレクトロニクス素子(1)。 - 前記変換材料は、EA(Ga1-x’Crx’)12O19,Ay(Ga1-x’Crx’)5O(15+y)/2,AE3(Ga1-x’Crx’)2Ge4O14,Ln3(Ga1-x’Crx’)5GeO14,(Ga1-x’Crx’)2O3,Ln6(Ga1-x’Crx’)11DO28,(Mg1-x’Crx’)8/(2-x’)D2O9およびそれらの組合せ、ただしx’=0.0001〜0.1、y=0.9〜1.9、EA=Mg,Ca,Srおよび/またはBa、A=Li,Na,Kおよび/またはRb、AE=Mg,Ca,Srおよび/またはBa、Ln=La,Ce,Pr,Nd,Pm,Sm,Eu,Gd,Tb,Dy,Ho,Er,Tm,Ybおよび/またはLuかつD=Nbおよび/またはTa、を含む化合物のグループから選択されている、
請求項1から6までのいずれか1項記載のビーム放射型のオプトエレクトロニクス素子(1)。 - 前記変換素子(6)は、前記半導体チップ(2)の封止体の一部であるか、または前記変換素子(6)は、前記封止体を成している、
請求項1から8までのいずれか1項記載のビーム放射型のオプトエレクトロニクス素子(1)。 - 前記変換素子(6)は、1つの層として形成されており、かつ前記半導体チップ(2)に直接的に設けられている、
請求項1から9までのいずれか1個記載のビーム放射型のオプトエレクトロニクス素子(1)。 - 前記変換素子(6)は、プレートまたはシートとして形成されており、該プレートまたはシートは、前記半導体チップ(2)の上に設けられている、
請求項1から8までのいずれか1個記載のビーム放射型のオプトエレクトロニクス素子。 - 分光計における、請求項1から11までのいずれか1項記載のビーム放射型のオプトエレクトロニクス素子(1)の使用。
- 内視鏡における、請求項1から11までのいずれか1項記載のビーム放射型のオプトエレクトロニクス素子(1)の使用。
- ビーム放射型のオプトエレクトロニクス素子(1)を製造するための方法において、
以下の方法ステップ、すなわち
A)前記素子の動作時に一次ビームを放射するように構成されている半導体チップ(2)を準備するステップ、
B)Crイオンおよび/またはNiイオンおよびホスト材料を含有している変換材料を含んでいる変換素子(6)を製造するステップであって、前記ホスト材料は、EAGa12O19,AyGa5O(15+y)/2,AE3Ga2Ge4O14,Ln3Ga5GeO14,Ga2O3,Ln3Ga5.5D0.5O14およびMg4D2O9、ただしEA=Mg,Ca,Srおよび/またはBa、A=Li,Na,Kおよび/またはRb、AE=Mg,Ca,Srおよび/またはBa、Ln=La,Ce,Pr,Nd,Pm,Sm,Eu,Gd,Tb,Dy,Ho,Er,Tm,Ybおよび/またはLu、およびD=Nbおよび/またはTa、かつy=0.9〜1.9、を含む化合物のグループから選択されている、ステップ、
C)前記素子の動作時に前記半導体チップから放射される前記一次ビームを、700nmから2,000nmの間の波長の二次ビームに変換するように構成されている前記変換素子(6)を、前記半導体チップ(2)の上に設けるステップ、
を含んでいる、ビーム放射型のオプトエレクトロニクス素子(1)を製造するための方法。 - 前記方法ステップB)は、方法ステップBB):
BB)前記変換材料を製造するステップ、
を含んでおり、
前記方法ステップBB)は、以下の方法ステップ:
BB1)出発材料を混合するステップ、
BB2)前記変換材料を形成するために、前記BB1)において得られた混合物を、700℃から1,500℃の間の温度でか焼するステップ、
を含んでいる、
請求項14記載の方法。 - 前記方法ステップBB1)における前記出発材料は、金属酸化物、金属水酸化物、金属炭酸塩、金属硝酸塩、金属ハロゲン化物、金属酢酸塩、金属窒化物およびそれらの組合せを含むグループから選択されている、
請求項14または15記載の方法。
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Also Published As
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WO2016174236A1 (de) | 2016-11-03 |
KR20170141750A (ko) | 2017-12-26 |
JP6570653B2 (ja) | 2019-09-04 |
KR102596889B1 (ko) | 2023-10-31 |
DE102015106757A1 (de) | 2016-11-03 |
US10411170B2 (en) | 2019-09-10 |
DE112016001960A5 (de) | 2018-01-18 |
US20180358514A1 (en) | 2018-12-13 |
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