JP2018511945A - 紫外線発光素子 - Google Patents
紫外線発光素子 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims abstract description 255
- 230000002265 prevention Effects 0.000 claims abstract description 147
- 239000000758 substrate Substances 0.000 claims description 89
- 150000004767 nitrides Chemical class 0.000 claims description 53
- 238000004519 manufacturing process Methods 0.000 claims description 49
- 238000000034 method Methods 0.000 claims description 49
- 230000001939 inductive effect Effects 0.000 claims description 21
- 230000004888 barrier function Effects 0.000 claims description 18
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 230000003247 decreasing effect Effects 0.000 claims description 8
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 230000007423 decrease Effects 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 498
- 229910002601 GaN Inorganic materials 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 229910002704 AlGaN Inorganic materials 0.000 description 14
- 229910052594 sapphire Inorganic materials 0.000 description 11
- 239000010980 sapphire Substances 0.000 description 11
- 239000000203 mixture Substances 0.000 description 9
- 230000007547 defect Effects 0.000 description 8
- 230000001965 increasing effect Effects 0.000 description 8
- 230000000903 blocking effect Effects 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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Abstract
Description
Claims (21)
- 第1導電型半導体層、
前記第1導電型半導体層上に位置するクラック防止層、
前記クラック防止層上に位置する活性層、及び
前記活性層上に位置する第2導電型半導体層を含み、
前記クラック防止層は、前記第1導電型半導体層と前記クラック防止層との界面で、前記第1導電型半導体層の格子に連結される第1格子点、及び前記第1導電型半導体層の格子に連結されない第2格子点を含む紫外線発光素子。 - 前記第1導電型半導体層と前記クラック防止層との界面で、前記クラック防止層の単位面積当たりの格子点密度は、前記第1導電型半導体層の単位面積当たりの格子点密度より高い、請求項1に記載の紫外線発光素子。
- 前記第1導電型半導体層は、上部方向に行くほど格子距離が増加するクラック誘発部分を含む、請求項1に記載の紫外線発光素子。
- 前記クラック誘発部分の最上部の水平格子距離は、前記第1導電型半導体層内の平均水平格子距離より大きい、請求項3に記載の紫外線発光素子。
- 前記第2格子点のうち少なくとも一部は前記クラック誘発部分上に位置する、請求項3に記載の紫外線発光素子。
- 前記クラック防止層は複数の層からなり、
前記複数の層のうち少なくとも一つの層は、前記少なくとも一つの層の下側の層の格子に連結されない格子点を含む、請求項1に記載の紫外線発光素子。 - 前記クラック防止層の複数の層は超格子構造で形成される、請求項6に記載の紫外線発光素子。
- 前記第1導電型半導体層及び前記クラック防止層のそれぞれはAl及びGaを含む、請求項1に記載の窒化物系半導体を含む紫外線発光素子。
- 前記クラック防止層はInをさらに含み、
前記活性層は、障壁層及び井戸層を含む多重量子井戸構造からなり、前記障壁層は、Al、Ga及びInを含む窒化物系半導体を含む、請求項8に記載の紫外線発光素子。 - 前記第1導電型半導体層の下側に位置する成長基板をさらに含み、前記成長基板の熱膨張係数は前記第1導電型半導体層の熱膨張係数より大きい、請求項1に記載の紫外線発光素子。
- 前記クラック防止層と前記活性層との間に位置する超格子層をさらに含む、請求項1に記載の紫外線発光素子。
- 前記第1導電型半導体層の下側に位置し、前記第1導電型半導体層と電気的に連結された第1電極、及び
前記第2導電型半導体層上に位置し、前記第2導電型半導体層と電気的に連結された第2電極をさらに含む、請求項1に記載の紫外線発光素子。 - 前記クラック防止層は5nm〜15nmの厚さを有する、請求項1に記載の紫外線発光素子。
- 第1導電型半導体層、
前記第1導電型半導体層上に位置するクラック防止層、
前記クラック防止層上に位置する活性層、及び
前記活性層上に位置する第2導電型半導体層を含み、
前記第1導電型半導体層と前記クラック防止層との界面上部の格子密度は前記界面下部の格子密度より大きい紫外線発光素子。 - 前記クラック防止層は前記第1導電型半導体層より低い温度で成長し、
前記クラック防止層の成長過程で、前記第1導電型半導体層の格子に連結されない格子が形成される、請求項14に記載の紫外線発光素子。 - 成長基板上に第1導電型半導体層を形成し、
前記第1導電型半導体層上にクラック防止層を形成し、
前記クラック防止層上に活性層を形成し、さらに
前記活性層上に第2導電型半導体層を形成することを含み、
前記クラック防止層は、前記第1導電型半導体層より低い成長温度で形成され、
前記クラック防止層を形成することは、前記第1導電型半導体層の格子に連結されない第1格子点を形成することを含む紫外線発光素子の製造方法。 - 前記クラック防止層を形成する時間の間、前記時間のうち少なくとも一部の時間の間に成長チャンバー内の温度が時間の経過と共に下降する、請求項16に記載の紫外線発光素子の製造方法。
- 前記第1導電型半導体層は第1温度で成長し、前記活性層は前記第1温度より低い第2温度で成長し、
前記クラック防止層は、前記第1温度から第2温度に減温する間に成長する、請求項17に記載の紫外線発光素子の製造方法。 - 前記第1温度から第2温度に減温する間、前記第1導電型半導体層にクラック誘発部分が形成され、
前記クラック防止層の第1導電型半導体層の格子に連結されない第1格子点は前記クラック誘発部分上に形成される、請求項18に記載の紫外線発光素子の製造方法。 - 前記クラック防止層を形成することは、前記第1導電型半導体層の格子に連結される第2格子点を形成することをさらに含む、請求項16に記載の紫外線発光素子の製造方法。
- 前記クラック防止層を形成することは、前記クラック防止層の形成過程の間に成長チャンバー内にソースを導入することなく、前記第1導電型半導体層を形成するために成長チャンバー内に導入された各ソースのうち残留するソースによって前記クラック防止層が成長することを含む、請求項16に記載の紫外線発光素子の製造方法。
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Application Number | Priority Date | Filing Date | Title |
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KR1020150045557A KR102347387B1 (ko) | 2015-03-31 | 2015-03-31 | 자외선 발광 소자 |
KR10-2015-0045557 | 2015-03-31 | ||
PCT/KR2016/003149 WO2016159614A1 (en) | 2015-03-31 | 2016-03-28 | Uv light emitting device |
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JP2018511945A true JP2018511945A (ja) | 2018-04-26 |
JP6505248B2 JP6505248B2 (ja) | 2019-04-24 |
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US (1) | US10374123B2 (ja) |
EP (2) | EP3926696A1 (ja) |
JP (1) | JP6505248B2 (ja) |
KR (1) | KR102347387B1 (ja) |
CN (2) | CN107534073B (ja) |
WO (1) | WO2016159614A1 (ja) |
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CN107195742B (zh) * | 2017-07-17 | 2019-04-30 | 圆融光电科技股份有限公司 | 紫外led的制备方法及紫外led |
JP2019036629A (ja) * | 2017-08-15 | 2019-03-07 | 国立研究開発法人理化学研究所 | 深紫外発光ダイオードおよびそれを備える電気機器 |
US11342479B2 (en) * | 2018-09-11 | 2022-05-24 | Facebook Technologies, Llc | Reducing bowing of materials before wafer-to-wafer bonding for LED manufacturing |
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WO2016159614A1 (en) | 2016-10-06 |
EP3278372B1 (en) | 2021-08-18 |
KR20160117012A (ko) | 2016-10-10 |
JP6505248B2 (ja) | 2019-04-24 |
US20180090640A1 (en) | 2018-03-29 |
US10374123B2 (en) | 2019-08-06 |
EP3278372A4 (en) | 2018-10-31 |
CN111129239B (zh) | 2024-04-02 |
EP3278372A1 (en) | 2018-02-07 |
EP3926696A1 (en) | 2021-12-22 |
CN107534073B (zh) | 2020-02-07 |
CN107534073A (zh) | 2018-01-02 |
KR102347387B1 (ko) | 2022-01-06 |
CN111129239A (zh) | 2020-05-08 |
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