EP3278372A4 - Uv light emitting device - Google Patents

Uv light emitting device Download PDF

Info

Publication number
EP3278372A4
EP3278372A4 EP16773395.5A EP16773395A EP3278372A4 EP 3278372 A4 EP3278372 A4 EP 3278372A4 EP 16773395 A EP16773395 A EP 16773395A EP 3278372 A4 EP3278372 A4 EP 3278372A4
Authority
EP
European Patent Office
Prior art keywords
light emitting
emitting device
light
emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP16773395.5A
Other languages
German (de)
French (fr)
Other versions
EP3278372B1 (en
EP3278372A1 (en
Inventor
Chang Seok Han
Woo Chul Kwak
Hyo Shik Choi
Jung Hwan Hwang
Chang Geun Jang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seoul Viosys Co Ltd
Original Assignee
Seoul Viosys Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seoul Viosys Co Ltd filed Critical Seoul Viosys Co Ltd
Priority to EP21190742.3A priority Critical patent/EP3926696A1/en
Publication of EP3278372A1 publication Critical patent/EP3278372A1/en
Publication of EP3278372A4 publication Critical patent/EP3278372A4/en
Application granted granted Critical
Publication of EP3278372B1 publication Critical patent/EP3278372B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
EP16773395.5A 2015-03-31 2016-03-28 Uv light emitting device Active EP3278372B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP21190742.3A EP3926696A1 (en) 2015-03-31 2016-03-28 Uv light emitting device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020150045557A KR102347387B1 (en) 2015-03-31 2015-03-31 Uv light emitting device
PCT/KR2016/003149 WO2016159614A1 (en) 2015-03-31 2016-03-28 Uv light emitting device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
EP21190742.3A Division EP3926696A1 (en) 2015-03-31 2016-03-28 Uv light emitting device

Publications (3)

Publication Number Publication Date
EP3278372A1 EP3278372A1 (en) 2018-02-07
EP3278372A4 true EP3278372A4 (en) 2018-10-31
EP3278372B1 EP3278372B1 (en) 2021-08-18

Family

ID=57006211

Family Applications (2)

Application Number Title Priority Date Filing Date
EP16773395.5A Active EP3278372B1 (en) 2015-03-31 2016-03-28 Uv light emitting device
EP21190742.3A Pending EP3926696A1 (en) 2015-03-31 2016-03-28 Uv light emitting device

Family Applications After (1)

Application Number Title Priority Date Filing Date
EP21190742.3A Pending EP3926696A1 (en) 2015-03-31 2016-03-28 Uv light emitting device

Country Status (6)

Country Link
US (1) US10374123B2 (en)
EP (2) EP3278372B1 (en)
JP (1) JP6505248B2 (en)
KR (1) KR102347387B1 (en)
CN (2) CN107534073B (en)
WO (1) WO2016159614A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107195742B (en) * 2017-07-17 2019-04-30 圆融光电科技股份有限公司 The preparation method and ultraviolet LED of ultraviolet LED
JP2019036629A (en) * 2017-08-15 2019-03-07 国立研究開発法人理化学研究所 Deep ultraviolet light-emitting diode and electrical equipment with the same
US11342479B2 (en) * 2018-09-11 2022-05-24 Facebook Technologies, Llc Reducing bowing of materials before wafer-to-wafer bonding for LED manufacturing

Citations (2)

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US20100187496A1 (en) * 2009-01-23 2010-07-29 Invenlux Corporation Strain balanced light emitting devices
US20110064103A1 (en) * 2009-08-21 2011-03-17 The Regents Of The University Of California Semipolar nitride-based devices on partially or fully relaxed alloys with misfit dislocations at the heterointerface

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JPH02295133A (en) * 1989-05-10 1990-12-06 Hitachi Ltd Crystal structure and manufacture thereof
JPH04324645A (en) * 1991-04-24 1992-11-13 Hitachi Cable Ltd Semiconductor transistor
JP3121202B2 (en) * 1994-05-10 2000-12-25 エア・ウォーター株式会社 Light emitting device and method of manufacturing the same
JP2900990B2 (en) * 1995-11-24 1999-06-02 日亜化学工業株式会社 Nitride semiconductor light emitting device
US5959307A (en) * 1995-11-06 1999-09-28 Nichia Chemical Industries Ltd. Nitride semiconductor device
US6695913B1 (en) * 1997-07-10 2004-02-24 Sharp Kabushiki Kaisha III-Nitride optoelectronic semiconductor device containing lattice mismatched III-Nitride semiconductor materials
JP3557876B2 (en) 1997-10-10 2004-08-25 豊田合成株式会社 GaN-based semiconductor device and method of manufacturing the same
JP3557875B2 (en) 1997-10-10 2004-08-25 豊田合成株式会社 GaN-based semiconductor device and method of manufacturing the same
KR100763827B1 (en) * 2000-06-08 2007-10-05 니치아 카가쿠 고교 가부시키가이샤 Semiconductor laser device, and method of manufacturing the same
CN1147010C (en) * 2000-11-16 2004-04-21 中国科学院半导体研究所 Self-passinvating non-planar junction subgroup III nitride semi-conductor device and its making method
JP3548735B2 (en) 2001-06-29 2004-07-28 士郎 酒井 Method of manufacturing gallium nitride based compound semiconductor
JP2004179452A (en) * 2002-11-28 2004-06-24 Shin Etsu Handotai Co Ltd Hetero epitaxial wafer
JP2004281553A (en) 2003-03-13 2004-10-07 Nippon Telegr & Teleph Corp <Ntt> Light emitting diode
JPWO2010032423A1 (en) * 2008-09-16 2012-02-02 昭和電工株式会社 Method for manufacturing group III nitride semiconductor light emitting device, group III nitride semiconductor light emitting device and lamp, and method for reducing variation in emission wavelength distribution of group III nitride semiconductor light emitting device wafer
JP5316210B2 (en) * 2009-05-11 2013-10-16 住友電気工業株式会社 Nitride semiconductor light emitting device
CN102136536A (en) * 2010-01-25 2011-07-27 亚威朗(美国) Strain balanced light emitting device
KR20120079393A (en) 2011-01-04 2012-07-12 (주)세미머티리얼즈 A method for manufacturing semiconductor light emitting device
JP5662184B2 (en) 2011-02-01 2015-01-28 日本碍子株式会社 Epitaxial substrate for semiconductor device and method for manufacturing epitaxial substrate for semiconductor device
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Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100187496A1 (en) * 2009-01-23 2010-07-29 Invenlux Corporation Strain balanced light emitting devices
US20110064103A1 (en) * 2009-08-21 2011-03-17 The Regents Of The University Of California Semipolar nitride-based devices on partially or fully relaxed alloys with misfit dislocations at the heterointerface

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
HAEGER DANIEL A ET AL: "384 nm laser diode grown on asemipolar relaxed AlGaN buffer layer", APPLIED PHYSICS LETTERS, A I P PUBLISHING LLC, US, vol. 100, no. 16, 16 April 2012 (2012-04-16), pages 161107 - 161107, XP012155635, ISSN: 0003-6951, [retrieved on 20120419], DOI: 10.1063/1.4704560 *
See also references of WO2016159614A1 *
YOUNG ERIN C ET AL: "Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission", APPLIED PHYSICS LETTERS, A I P PUBLISHING LLC, US, vol. 101, no. 14, 1 October 2012 (2012-10-01), pages 142109 - 142109, XP012165157, ISSN: 0003-6951, [retrieved on 20121004], DOI: 10.1063/1.4757423 *

Also Published As

Publication number Publication date
US10374123B2 (en) 2019-08-06
CN111129239B (en) 2024-04-02
WO2016159614A1 (en) 2016-10-06
EP3278372B1 (en) 2021-08-18
CN107534073A (en) 2018-01-02
CN107534073B (en) 2020-02-07
KR20160117012A (en) 2016-10-10
EP3278372A1 (en) 2018-02-07
JP6505248B2 (en) 2019-04-24
EP3926696A1 (en) 2021-12-22
JP2018511945A (en) 2018-04-26
KR102347387B1 (en) 2022-01-06
CN111129239A (en) 2020-05-08
US20180090640A1 (en) 2018-03-29

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