JP2018510839A - シリコン単結晶インゴットの成長装置及び方法 - Google Patents

シリコン単結晶インゴットの成長装置及び方法 Download PDF

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JP2018510839A
JP2018510839A JP2018504631A JP2018504631A JP2018510839A JP 2018510839 A JP2018510839 A JP 2018510839A JP 2018504631 A JP2018504631 A JP 2018504631A JP 2018504631 A JP2018504631 A JP 2018504631A JP 2018510839 A JP2018510839 A JP 2018510839A
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single crystal
crucible
silicon
ingot
silicon single
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Japanese (ja)
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JP2018510839A5 (enExample
Inventor
ホン，ヨン・ホ
パク，ヒュン・ウ
ソン，ス・ジン
キム，ナム・ソク
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エスケイ・シルトロン・カンパニー・リミテッド
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Publication of JP2018510839A5 publication Critical patent/JP2018510839A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
JP2018504631A 2015-04-14 2016-04-12 シリコン単結晶インゴットの成長装置及び方法 Pending JP2018510839A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020150052307A KR101729515B1 (ko) 2015-04-14 2015-04-14 실리콘 단결정 잉곳의 성장 방법
KR10-2015-0052307 2015-04-14
PCT/KR2016/003841 WO2016167542A1 (ko) 2015-04-14 2016-04-12 실리콘 단결정 잉곳의 성장 장치 및 방법

Publications (2)

Publication Number Publication Date
JP2018510839A true JP2018510839A (ja) 2018-04-19
JP2018510839A5 JP2018510839A5 (enExample) 2019-01-31

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JP2018504631A Pending JP2018510839A (ja) 2015-04-14 2016-04-12 シリコン単結晶インゴットの成長装置及び方法

Country Status (4)

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US (1) US10344395B2 (enExample)
JP (1) JP2018510839A (enExample)
KR (1) KR101729515B1 (enExample)
WO (1) WO2016167542A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7342845B2 (ja) * 2020-11-25 2023-09-12 株式会社Sumco シリコン単結晶の製造方法
US12486593B2 (en) 2022-08-29 2025-12-02 Globalwafers Co., Ltd. Axial positioning of magnetic poles while producing a silicon ingot
US12486594B2 (en) 2022-08-29 2025-12-02 Globalwafers Co., Ltd. Ingot puller apparatus that axially position magnetic poles
CN117364225B (zh) * 2023-12-07 2024-02-23 天通控股股份有限公司 一种晶体与坩埚同向旋转的长晶方法

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08231294A (ja) * 1995-02-24 1996-09-10 Toshiba Ceramics Co Ltd 水平磁界下シリコン単結晶引上方法
JPH09208385A (ja) * 1996-01-30 1997-08-12 Mitsubishi Materials Corp シリコン単結晶の育成方法及びその装置
JP2003321297A (ja) * 2002-04-25 2003-11-11 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法及びシリコン単結晶ウェーハ
JP2005015314A (ja) * 2003-06-27 2005-01-20 Shin Etsu Handotai Co Ltd 単結晶の製造方法及び単結晶
JP2007084417A (ja) * 2005-09-21 2007-04-05 Siltron Inc 高品質シリコン単結晶インゴットの成長装置，その装置を利用した成長方法
JP2008019129A (ja) * 2006-07-13 2008-01-31 Sumco Corp 単結晶製造装置、単結晶の製造方法および単結晶
JP2008214118A (ja) * 2007-03-01 2008-09-18 Shin Etsu Handotai Co Ltd 半導体単結晶の製造方法
JP2010024120A (ja) * 2008-07-24 2010-02-04 Sumco Corp シリコン単結晶およびその育成方法
WO2013176396A1 (ko) * 2012-05-23 2013-11-28 주식회사 엘지실트론 단결정 실리콘 잉곳 및 웨이퍼, 그 잉곳 성장 장치 및 방법
JP2014214067A (ja) * 2013-04-26 2014-11-17 信越半導体株式会社 シリコン単結晶の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2546736B2 (ja) * 1990-06-21 1996-10-23 信越半導体株式会社 シリコン単結晶引上方法
JP2940437B2 (ja) 1995-06-01 1999-08-25 信越半導体株式会社 単結晶の製造方法及び装置
JP4853237B2 (ja) * 2006-11-06 2012-01-11 株式会社Ｓｕｍｃｏ エピタキシャルウェーハの製造方法
KR100954291B1 (ko) * 2008-01-21 2010-04-26 주식회사 실트론 고품질의 반도체 단결정 잉곳 제조장치 및 방법
KR101105475B1 (ko) * 2009-02-04 2012-01-13 주식회사 엘지실트론 공정 변동이 최소화된 단결정 제조방법
KR101379798B1 (ko) * 2012-05-23 2014-04-01 주식회사 엘지실트론 단결정 실리콘 잉곳 성장 장치 및 방법
KR20150007885A (ko) * 2013-07-12 2015-01-21 엘지이노텍 주식회사 형광체 및 이를 구비한 발광 소자

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08231294A (ja) * 1995-02-24 1996-09-10 Toshiba Ceramics Co Ltd 水平磁界下シリコン単結晶引上方法
JPH09208385A (ja) * 1996-01-30 1997-08-12 Mitsubishi Materials Corp シリコン単結晶の育成方法及びその装置
JP2003321297A (ja) * 2002-04-25 2003-11-11 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法及びシリコン単結晶ウェーハ
JP2005015314A (ja) * 2003-06-27 2005-01-20 Shin Etsu Handotai Co Ltd 単結晶の製造方法及び単結晶
JP2007084417A (ja) * 2005-09-21 2007-04-05 Siltron Inc 高品質シリコン単結晶インゴットの成長装置，その装置を利用した成長方法
JP2008019129A (ja) * 2006-07-13 2008-01-31 Sumco Corp 単結晶製造装置、単結晶の製造方法および単結晶
JP2008214118A (ja) * 2007-03-01 2008-09-18 Shin Etsu Handotai Co Ltd 半導体単結晶の製造方法
JP2010024120A (ja) * 2008-07-24 2010-02-04 Sumco Corp シリコン単結晶およびその育成方法
WO2013176396A1 (ko) * 2012-05-23 2013-11-28 주식회사 엘지실트론 단결정 실리콘 잉곳 및 웨이퍼, 그 잉곳 성장 장치 및 방법
JP2014214067A (ja) * 2013-04-26 2014-11-17 信越半導体株式会社 シリコン単結晶の製造方法

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US20180094359A1 (en) 2018-04-05
US10344395B2 (en) 2019-07-09
WO2016167542A1 (ko) 2016-10-20
KR20160122453A (ko) 2016-10-24
KR101729515B1 (ko) 2017-04-24

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