KR101729515B1 - 실리콘 단결정 잉곳의 성장 방법 - Google Patents

실리콘 단결정 잉곳의 성장 방법 Download PDF

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Publication number
KR101729515B1
KR101729515B1 KR1020150052307A KR20150052307A KR101729515B1 KR 101729515 B1 KR101729515 B1 KR 101729515B1 KR 1020150052307 A KR1020150052307 A KR 1020150052307A KR 20150052307 A KR20150052307 A KR 20150052307A KR 101729515 B1 KR101729515 B1 KR 101729515B1
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KR
South Korea
Prior art keywords
single crystal
ingot
silicon
growing
crystal ingot
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KR1020150052307A
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English (en)
Korean (ko)
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KR20160122453A (ko
Inventor
홍영호
박현우
손수진
김남석
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주식회사 엘지실트론
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Priority to KR1020150052307A priority Critical patent/KR101729515B1/ko
Priority to JP2018504631A priority patent/JP2018510839A/ja
Priority to US15/564,045 priority patent/US10344395B2/en
Priority to PCT/KR2016/003841 priority patent/WO2016167542A1/ko
Publication of KR20160122453A publication Critical patent/KR20160122453A/ko
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Publication of KR101729515B1 publication Critical patent/KR101729515B1/ko
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
KR1020150052307A 2015-04-14 2015-04-14 실리콘 단결정 잉곳의 성장 방법 Active KR101729515B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020150052307A KR101729515B1 (ko) 2015-04-14 2015-04-14 실리콘 단결정 잉곳의 성장 방법
JP2018504631A JP2018510839A (ja) 2015-04-14 2016-04-12 シリコン単結晶インゴットの成長装置及び方法
US15/564,045 US10344395B2 (en) 2015-04-14 2016-04-12 Apparatus and method for growing silicon single crystal ingot
PCT/KR2016/003841 WO2016167542A1 (ko) 2015-04-14 2016-04-12 실리콘 단결정 잉곳의 성장 장치 및 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020150052307A KR101729515B1 (ko) 2015-04-14 2015-04-14 실리콘 단결정 잉곳의 성장 방법

Publications (2)

Publication Number Publication Date
KR20160122453A KR20160122453A (ko) 2016-10-24
KR101729515B1 true KR101729515B1 (ko) 2017-04-24

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KR1020150052307A Active KR101729515B1 (ko) 2015-04-14 2015-04-14 실리콘 단결정 잉곳의 성장 방법

Country Status (4)

Country Link
US (1) US10344395B2 (enExample)
JP (1) JP2018510839A (enExample)
KR (1) KR101729515B1 (enExample)
WO (1) WO2016167542A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7342845B2 (ja) * 2020-11-25 2023-09-12 株式会社Sumco シリコン単結晶の製造方法
US12486593B2 (en) 2022-08-29 2025-12-02 Globalwafers Co., Ltd. Axial positioning of magnetic poles while producing a silicon ingot
US12486594B2 (en) 2022-08-29 2025-12-02 Globalwafers Co., Ltd. Ingot puller apparatus that axially position magnetic poles
CN117364225B (zh) * 2023-12-07 2024-02-23 天通控股股份有限公司 一种晶体与坩埚同向旋转的长晶方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100239864B1 (ko) 1995-06-01 2000-01-15 와다 다다시 단결정의 제조방법 및 장치
KR101379798B1 (ko) * 2012-05-23 2014-04-01 주식회사 엘지실트론 단결정 실리콘 잉곳 성장 장치 및 방법
JP2014214067A (ja) * 2013-04-26 2014-11-17 信越半導体株式会社 シリコン単結晶の製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2546736B2 (ja) * 1990-06-21 1996-10-23 信越半導体株式会社 シリコン単結晶引上方法
JPH08231294A (ja) 1995-02-24 1996-09-10 Toshiba Ceramics Co Ltd 水平磁界下シリコン単結晶引上方法
JPH09208385A (ja) 1996-01-30 1997-08-12 Mitsubishi Materials Corp シリコン単結晶の育成方法及びその装置
JP2003321297A (ja) 2002-04-25 2003-11-11 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法及びシリコン単結晶ウェーハ
JP4457584B2 (ja) * 2003-06-27 2010-04-28 信越半導体株式会社 単結晶の製造方法及び単結晶
KR100831044B1 (ko) 2005-09-21 2008-05-21 주식회사 실트론 고품질 실리콘 단결정 잉곳의 성장장치, 그 장치를 이용한성장방법
JP2008019129A (ja) 2006-07-13 2008-01-31 Sumco Corp 単結晶製造装置、単結晶の製造方法および単結晶
JP4853237B2 (ja) * 2006-11-06 2012-01-11 株式会社Ｓｕｍｃｏ エピタキシャルウェーハの製造方法
JP2008214118A (ja) 2007-03-01 2008-09-18 Shin Etsu Handotai Co Ltd 半導体単結晶の製造方法
KR100954291B1 (ko) * 2008-01-21 2010-04-26 주식회사 실트론 고품질의 반도체 단결정 잉곳 제조장치 및 방법
JP5228671B2 (ja) * 2008-07-24 2013-07-03 株式会社Ｓｕｍｃｏ シリコン単結晶の育成方法
KR101105475B1 (ko) * 2009-02-04 2012-01-13 주식회사 엘지실트론 공정 변동이 최소화된 단결정 제조방법
WO2013176396A1 (ko) * 2012-05-23 2013-11-28 주식회사 엘지실트론 단결정 실리콘 잉곳 및 웨이퍼, 그 잉곳 성장 장치 및 방법
KR20150007885A (ko) * 2013-07-12 2015-01-21 엘지이노텍 주식회사 형광체 및 이를 구비한 발광 소자

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100239864B1 (ko) 1995-06-01 2000-01-15 와다 다다시 단결정의 제조방법 및 장치
KR101379798B1 (ko) * 2012-05-23 2014-04-01 주식회사 엘지실트론 단결정 실리콘 잉곳 성장 장치 및 방법
JP2014214067A (ja) * 2013-04-26 2014-11-17 信越半導体株式会社 シリコン単結晶の製造方法

Also Published As

Publication number Publication date
US20180094359A1 (en) 2018-04-05
US10344395B2 (en) 2019-07-09
JP2018510839A (ja) 2018-04-19
WO2016167542A1 (ko) 2016-10-20
KR20160122453A (ko) 2016-10-24

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