WO2016167542A1 - 실리콘 단결정 잉곳의 성장 장치 및 방법 - Google Patents

실리콘 단결정 잉곳의 성장 장치 및 방법 Download PDF

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Publication number
WO2016167542A1
WO2016167542A1 PCT/KR2016/003841 KR2016003841W WO2016167542A1 WO 2016167542 A1 WO2016167542 A1 WO 2016167542A1 KR 2016003841 W KR2016003841 W KR 2016003841W WO 2016167542 A1 WO2016167542 A1 WO 2016167542A1
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WO
WIPO (PCT)
Prior art keywords
crucible
single crystal
ingot
silicon melt
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2016/003841
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English (en)
French (fr)
Korean (ko)
Inventor
홍영호
박현우
손수진
김남석
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Siltron Co Ltd
Original Assignee
LG Siltron Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Siltron Inc filed Critical LG Siltron Inc
Priority to JP2018504631A priority Critical patent/JP2018510839A/ja
Priority to US15/564,045 priority patent/US10344395B2/en
Publication of WO2016167542A1 publication Critical patent/WO2016167542A1/ko
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Definitions

  • the embodiment relates to an apparatus and a method for growing a silicon single crystal ingot, and more particularly, to uniformity of oxygen concentration in the radial direction and the radial direction in the silicon single crystal ingot.
  • Conventional silicon wafers include a single crystal growth process for producing a single crystal ingot, a slicing process for slicing the single crystal ingot to obtain a thin disk-shaped wafer, and cracking and distortion of the wafer obtained by the slicing process. Grinding process to process the outer periphery to prevent, Lapping process to remove the damage due to mechanical processing remaining on the wafer, Polishing process to mirror the wafer And a cleaning step of polishing the polished wafer and removing the abrasive or foreign matter adhering to the wafer.
  • a polycrystalline silicon is charged into a quartz crucible, heated and melted by a graphite heating element, and then immersed in a silicon melt formed as a result of melting, and the seed crystal is rotated and pulled while rotating when crystallization occurs at the interface. To grow.
  • oxygen is included in the silicon single crystal as crystal defects and unwanted impurities according to the growth history. This impregnated oxygen grows into oxygen precipitates due to the heat applied in the manufacturing process of the semiconductor device. The oxygen precipitates reinforce the strength of the silicon wafer and capture metal contaminants, such as internal gettering. It also shows beneficial properties, such as acting as a c-site, but also shows harmful properties that cause leakage current and failure of semiconductor devices.
  • the oxygen concentration of the wafer made from the silicon single crystal ingot needs to be fixed in the longitudinal direction and the radial direction, and the seed rotation speed, the crucible rotation speed, and the melt surface are the process variables when growing the silicon single crystal ingot. Melt gap, the gap between the heat shield and the heat shield, the pull speed of the ingot, the change of the design of the hot zone, and the third element doping such as nitrogen or carbon. Oxygen concentration can be adjusted.
  • the embodiment seeks to improve the uniformity of the oxygen concentration in the longitudinal direction and the radial direction upon growth of the silicon single crystal.
  • An embodiment includes a chamber; A crucible provided inside the chamber and containing a silicon melt; A crucible support and a rotating shaft disposed below the crucible; A heater provided inside the chamber and heating the silicon melt; Pulling means for rotating and pulling an ingot grown from the silicon melt; And a magnetic field generating unit for applying a horizontal magnetic field to the crucible, wherein a first direction in which the rotating shaft rotates the crucible and a second direction in which the pulling means rotates the ingot are the same.
  • the heater may heat around the crucible so that the maximum heat generating position is formed below the maximum gauss position (MGP).
  • the heater may heat around the crucible so that the maximum heat generating position is formed 100 to 200 millimeters below the MGP.
  • the heater and the pulling means may heat the crucible and pull up the ingot so that the diffusion boundary layer is evenly distributed at the radial edge of the silicon melt.
  • the heater and the pulling means may heat the crucible and pull up the ingot so that the diffusion boundary layer is formed 12 mm below the surface of the silicon melt.
  • the heater and the pulling means may heat the crucible and pull up the ingot so that the diffusion boundary layer is distributed over a diameter of 300 millimeters or more from the edge of the silicon melt.
  • Another embodiment provides a method for growing a silicon single crystal ingot, wherein the ingot and the crucible are rotated in the same direction, and the maximum heating position is positioned below the maximum gauss position (MGP).
  • MGP maximum gauss position
  • the diffusion boundary layer may be evenly distributed at the radial edge of the silicon melt.
  • the diffusion boundary layer may be distributed in a diameter of at least 300 millimeters 12 millimeters below the surface of the silicon melt.
  • the flow of the silicon melt in the depth direction within the silicon melt may be constant.
  • the maximum heat generating position may be located 100 to 200 millimeters below the MGP.
  • FIG. 1 is a view showing a single crystal ingot manufacturing apparatus according to an embodiment
  • FIG. 2 is a diagram showing the movement of the maximum Gaussian point when growing silicon single crystal ingot
  • FIG. 3 is a view showing a conventional maximum heating position and the maximum heating position according to the embodiment
  • FIGS. 4A to 4C are views illustrating a flow of silicon melt with a comparative example in a method of growing a silicon single crystal ingot according to an embodiment
  • 5A to 5C are diagrams illustrating a distribution of oxygen in a silicon melt together with a comparative example in a method of growing a silicon single crystal ingot according to an embodiment
  • 6A is a view showing the uniformity of the oxygen concentration in the growth method of the silicon single crystal ingot according to the embodiment
  • 6B is a view showing uniformity of oxygen concentration in a method of growing a silicon single crystal ingot according to a comparative example.
  • the upper (up) or the lower (down) (on or under) when described as being formed on the “on” or “on” (under) of each element, the upper (up) or the lower (down) (on or under) includes both the two elements are in direct contact with each other (directly) or one or more other elements are formed indirectly formed (indirectly) between the two elements.
  • the upper (up) or the lower (down) (on or under) when expressed as “up” or "on (under)", it may include the meaning of the downward direction as well as the upward direction based on one element.
  • each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description.
  • the size of each component does not necessarily reflect the actual size.
  • FIG. 1 is a view showing an apparatus for producing a single crystal ingot according to the embodiment.
  • the silicon single crystal ingot manufacturing apparatus 100 may include a chamber 110, a crucible 120, a heater 130, a pulling unit 150, and the like.
  • the silicon single crystal ingot manufacturing apparatus 100 according to the embodiment is provided with a chamber 110, a crucible 120 provided inside the chamber 110, and accommodates a silicon melt, and the chamber 110.
  • the magnetic field generating unit (not shown) provided in the interior of the crucible 120 and the heater 130 for heating the crucible 120 and the seed crystal 152 is applied to the pulling means 150 and the crucible 120 coupled to one end. May include).
  • the chamber 110 provides a space in which predetermined processes for growing a single crystal ingot for a silicon wafer used as an electronic component material such as a semiconductor are performed.
  • the radiant heat insulator 140 may be installed on the inner wall of the chamber 110 to prevent heat of the heater 130 from being discharged to the side wall of the chamber 110.
  • an argon gas or the like may be injected into the chamber 110 of the silicon single crystal growth apparatus and discharged downward.
  • the crucible 120 is provided inside the chamber 110 to contain the silicon melt, and may be made of quartz or the like.
  • a crucible support (not shown) made of graphite may be provided outside the crucible 120 to support the crucible 120.
  • the crucible support is fixedly installed on a rotating shaft (not shown), and the rotating shaft is rotated by a driving means (not shown) so as to rotate and elevate the crucible 120 at a solid-liquid interface, that is, an interface between the solidified ingot and the silicon melt. You can keep this same height.
  • the rotation shaft may be rotated in a first direction in which the crucible is rotated, and the pulling means is rotated in a second direction in which the ingot is rotated.
  • the first and second directions may be the same.
  • the heater 130 may be provided inside the chamber 110 to heat the crucible 120.
  • the heater 130 may be formed in a cylindrical shape surrounding the crucible support.
  • the heater 130 melts a high-purity polycrystalline silicon mass loaded in the crucible 120 into a silicon melt.
  • the crucible 120 is heated by heat supplied from the heater 130.
  • the temperature may be different for each region according to the height of the crucible, and the region having the highest temperature may correspond to the maximum heat generating position of the heater.
  • the Czochralsk (CZ) method in which seed crystals 152, which are single crystals, are immersed in a silicon melt and pulled up slowly, grows crystals. have.
  • a shouldering process is performed in which the crystals are grown in a radial direction to a target diameter, and then grown into crystals having a constant diameter.
  • the body growing process the body grows by a certain length, and then the diameter of the crystal is gradually reduced, and finally, a single crystal growth is completed through a tailing process of separating from the molten silicon.
  • the silicon melt may be doped with B (boron), a P-type dopant, and As (arsenic), P (phosphorus), Sb (antimony), and the like, of the N-type dopant.
  • B boron
  • P a P-type dopant
  • As arsenic
  • P phosphorus
  • Sb antimony
  • the growth rate / temperature gradient V / G
  • Oxygen concentrations may vary within.
  • the ingot and the crucible are rotated in the same direction, and the heater is disposed so that the maximum heat generating position is located below the maximum gauss position (MGP), so that the ingot is in the longitudinal direction and the radial direction (in-plane direction).
  • MGP maximum gauss position
  • the specific resistance of the wafers produced can be made constant by keeping the oxygen concentration at.
  • the magnetic field is applied to the periphery of the crucible 120 by the magnetic field applying unit.
  • the region where the intensity of the magnetic field is the highest may be referred to as a maximum gauss position (MGP).
  • MGP maximum gauss position
  • the heater and the magnetic field may heat the periphery of the crucible 120 and apply a magnetic field to the periphery of the crucible so that the maximum heating position is formed below the maximum gauss position (MGP). It can be formed 100 to 200 millimeters below the MGP.
  • FIG. 2 is a diagram showing the movement of the maximum Gaussian point when growing a silicon single crystal ingot.
  • the maximum Gaussian point MGP may move up and down the interface between the area A inside the crucible and the area B in the upper chamber, and the MGP may be moved in the direction A from the above-described boundary. And, it can move in the range of 'b' in the 'B' direction, the maximum heating position of the heater may be located below the MGP described above.
  • FIG 3 is a view showing a conventional maximum heating position and the maximum heating position according to the embodiment.
  • the maximum heat generating position is positioned below the conventional, and in particular, the maximum heat generating position may be positioned at a distance d of 100 millimeters to 200 millimeters below the MGP.
  • the flow of the silicon melt can be changed, and if the maximum heat generating position is located 200 mm or more below the MGP, the flow of the silicon melt top can be turbulence, and is located below 0 to 100 mm. The flow below the silicon melt can become turbulent.
  • the maximum heat generating position may be positioned 100 mm to 200 mm below the MGP, so that the flow in the depth direction of the silicon melt, that is, the vertical direction of FIG. 1 may be constant.
  • the oxygen concentration may be constant in the longitudinal and radial directions within the ingot.
  • the diffusion boundary layer may be distributed in a region outside the diameter of about 300 millimeters at a depth of about 12 millimeters from the surface of the growing silicon melt.
  • the growth method of the silicon single crystal ingot according to the embodiment It can be evenly distributed at the edge of the radial direction, which can be confirmed by measuring the temperature of the silicon melt.
  • the heater and the pulling means may heat the crucible so that the diffusion boundary layer is evenly distributed at the edge of the silicon melt and pull up the ingot.
  • the heater and the pulling means may heat the crucible and pull up the ingot so that the diffusion boundary layer is formed 12 mm below the surface of the silicon melt.
  • the diffusion boundary layer is an area having a diffusion speed of about 10 ⁇ 8 m 2 / sec.
  • the diffusion boundary layer may have a maximum diameter of 320 millimeters at a temperature of about 1700 Kelvin.
  • FIGS. 4A to 4C are views illustrating a flow of a silicon melt in a method of growing a silicon single crystal ingot according to an embodiment together with a comparative example.
  • the left side shows the flow of the silicon melt at the surface of the silicon melt and the flow toward the right shows the flow in the lower region, and the rightmost side shows the flow of the silicon melt at the bottom of the crucible.
  • the pattern of the flow of the silicon melt is maintained in the lower region.
  • the pattern of flow can be blurred at the bottom.
  • FIGS. 5A to 5C are diagrams illustrating a distribution of oxygen in a silicon melt with a comparative example in a method of growing a silicon single crystal ingot according to an embodiment.
  • a diffusion boundary layer is maintained at an edge of an ingot to form a silicon melt.
  • the oxygen concentration is uniform up to 2200 millimeters in the depth direction by suppressing the rate change, the flow rate of the silicon melt is not constant in the comparative example of FIG. 5A, and the oxygen concentration may be non-uniform at 2000 millimeters in the depth direction.
  • FIG. 6A is a view showing the uniformity of the oxygen concentration in the silicon single crystal ingot growth method according to the embodiment
  • Figure 6b is a view showing the uniformity of the oxygen concentration in the growth method of the silicon single crystal ingot according to the comparative example.
  • the silicon wafers are 180 millimeters and 220 millimeters in diameter, the resistivity is 0.09 and 0.11, respectively, and the oxygen concentrations of the silicon wafers made from one ingot are almost uniform in the radial direction.
  • the silicon wafers are 110 millimeters and 180 millimeters in diameter, and the resistivity is 0.16 and 0.19, respectively, and the oxygen concentration of the silicon wafers manufactured from one ingot shows a large dispersion in the radial direction.
  • the flow of the silicon melt is constant so that the diffusion boundary layer is distributed at the edge of the ingot and the oxygen concentration of the manufactured silicon wafer is constant, thereby improving the resistivity. Can be.
  • An embodiment is an apparatus and method for growing a silicon single crystal ingot can improve the uniformity of the oxygen concentration in the radial and radial directions in the silicon single crystal ingot.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
PCT/KR2016/003841 2015-04-14 2016-04-12 실리콘 단결정 잉곳의 성장 장치 및 방법 Ceased WO2016167542A1 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2018504631A JP2018510839A (ja) 2015-04-14 2016-04-12 シリコン単結晶インゴットの成長装置及び方法
US15/564,045 US10344395B2 (en) 2015-04-14 2016-04-12 Apparatus and method for growing silicon single crystal ingot

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KR1020150052307A KR101729515B1 (ko) 2015-04-14 2015-04-14 실리콘 단결정 잉곳의 성장 방법
KR10-2015-0052307 2015-04-14

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US (1) US10344395B2 (enExample)
JP (1) JP2018510839A (enExample)
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WO (1) WO2016167542A1 (enExample)

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Publication number Priority date Publication date Assignee Title
US12486594B2 (en) 2022-08-29 2025-12-02 Globalwafers Co., Ltd. Ingot puller apparatus that axially position magnetic poles
US12486593B2 (en) 2022-08-29 2025-12-02 Globalwafers Co., Ltd. Axial positioning of magnetic poles while producing a silicon ingot

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JP7342845B2 (ja) * 2020-11-25 2023-09-12 株式会社Sumco シリコン単結晶の製造方法
CN117364225B (zh) * 2023-12-07 2024-02-23 天通控股股份有限公司 一种晶体与坩埚同向旋转的长晶方法

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12486594B2 (en) 2022-08-29 2025-12-02 Globalwafers Co., Ltd. Ingot puller apparatus that axially position magnetic poles
US12486593B2 (en) 2022-08-29 2025-12-02 Globalwafers Co., Ltd. Axial positioning of magnetic poles while producing a silicon ingot

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US20180094359A1 (en) 2018-04-05
US10344395B2 (en) 2019-07-09
JP2018510839A (ja) 2018-04-19
KR20160122453A (ko) 2016-10-24
KR101729515B1 (ko) 2017-04-24

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