JP2018509776A - 半導体デバイス構造およびその製造方法 - Google Patents
半導体デバイス構造およびその製造方法 Download PDFInfo
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Abstract
Description
図1は、インジウムアルミニウム窒化ガリウム(Inx2Aly2Ga1−x2−y2N、x2=0〜1、y2=0〜1かつx2+y2=1)の核形成層12を有する半導体デバイス構造1を概略的に示し、核形成層12は、炭化ケイ素(SiC)基板11とInx1Aly1Ga1−x1−y1N、x1=0〜1、y1=0〜1かつx1+y1=1のバッファ層13とに挟まれている。
以降の核形成層、バッファ層および任意に選択できる別の層の成長の前に、SiC基板は、主に酸素からだけでなく炭素からも構成される場合がある表面汚染物を除去するために前処理される。
InxAlyGa1−x−yN核形成層、たとえばAlyGa1−yNまたはAlNと、InxAlyGa1−x−yNバッファ層、たとえばAlyGa1−yNまたはGaNとは、有機金属気相成長(MOVPE)としても知られている有機金属気相堆積(MOCVD)によって堆積させてもよい。MOCVDすなわちMOVPEは、固体材料が気相前駆体の化学反応によって基板上に堆積する化学蒸着方法である。この方法は、複雑な半導体多層構造を成長させるのに主に用いられる。
代替例として、核形成層およびバッファ層は、ハイドライド気相成長(HVPE)によって成長させてもよい。MOCVDとは異なり、HVPEプロセスには有機金属前駆体は関係せず、代わりに、気体の金属塩化物、たとえばAlCl3をAlN核形成成長時にNH3と反応させる。HVPEについては、核形成層およびバッファ層の用意にMOCVDと同じリアクタを用いてもよい。成長時の温度および圧力は、MOCVDによる成長と同じであってもよい。ただし、AlN核形成層の成長率はHVPEにより50〜100倍高い、すなわち約100μm/hである場合がある。前駆体の温度を増す場合、成長率はより一層高速になる場合がある。
プロセス工程はMOCVD(MOVPE)方法により成長させるAlN核形成層に関して以下に記載されている。代替方法、すなわち、ハイドライド気相成長(HVPE)および分子線エピタキシ(MBE)のパラメータは別に説明される。
核形成層(たとえば上述のAlN核形成層)上でのバッファ層の成長は、MOCVD(すなわちMOVPE)方法により成長させるGaNバッファ層に関して以下に記載される。代替例として、バッファ層はHVPEまたはMBEによって同様に堆積させてもよい。
SiC/AlN/GaN半導体デバイス構造の界面は本明細書に開示されている方法により、すなわち、SiC基板の前処理とAlN成長時の開始温度の上昇とを利用して製造された。また、SiC/AlN/GaN基準半導体デバイス構造の界面はX線回折(XRD)を特徴とする従来の方法により製造された。従来の方法にしたがう構造は、SiC基板の前処理とAlN核形成層成長時の温度上昇なしで製造された。リアクタの温度と成長時の圧力のような他のパラメータはAlN核形成層成長とGaNバッファ層成長との両方で同じであった。両構造はMOCVDによって同じリアクタで製造された。
前処理されたSiC基板のX線光電子分光(XPS)特性評価はMAX国立シンクロトロン研究所にあるビームラインI311で行われた。表面内殻準位スペクトルを取得するのに140eVおよび750eVの光子エネルギでの100meVおよび300meV未満の高エネルギ解像度をそれぞれ利用した。
Claims (28)
- SiC基板と、
Inx1Aly1Ga1−x1−y1Nバッファ層であって、x1=0〜1、y1=0〜1かつx1+y1=1、好ましくはx1<0.05かつy1<0.50、より好ましくはx1<0.03かつy1<0.30、最も好ましくはx1<0.01かつy1<0.10であるInx1Aly1Ga1−x1−y1Nバッファ層と、
Inx2Aly2Ga1−x2−y2N核形成層であって、x2=0〜1、y2=0〜1かつx2+y2=1、好ましくはx2<0.05かつy2<0.70、より好ましくはx2<0.03かつy2<0.50、最も好ましくはx2<0.01かつy2<0.30であり、前記SiC基板と前記バッファ層とに挟まれるInx2Aly2Ga1−x2−y2N核形成層と、
を備え、
前記バッファ層は、(102)ピークが250arcsec未満のFWHMを持つロッキング曲線を示し、
前記核形成層は、X線回折(XRD)により測定する際に(105)ピークが200arcsec未満のFWHMを持つロッキング曲線を示す、
ことを特徴とする半導体デバイス構造。 - 前記バッファ層はGaNである、請求項1に記載の半導体デバイス構造。
- 前記核形成層はAlNである、請求項1または2に記載の半導体デバイス構造。
- 前記SiCポリタイプは4H、6Hまたは3Cである、請求項1から3のいずれか一項に記載の半導体デバイス構造。
- 前記SiCの表面は、X線光電子分光により測定する際に5%未満の酸素単層を有する、請求項1から4のいずれか一項に記載の半導体デバイス構造。
- 前記バッファ層は、1〜4μm、好ましくは1.3〜3μm、最も好ましくは1.5〜2μmの厚さを持つ、請求項1から5のいずれか一項に記載の半導体デバイス構造。
- 前記核形成層は、10〜100nm、好ましくは10〜50nm、最も好ましくは10〜40nmの厚さを持つ、請求項1から6のいずれか一項に記載の半導体デバイス構造。
- 前記核形成層の形態は、1μm2あたり0〜10個のピット、好ましくは1μm2あたり0〜8個のピット、最も好ましくは1μm2あたり0〜5個のピットがある完全な合体を有する、請求項1から7のいずれか一項に記載の半導体デバイス構造。
- 請求項1から8のいずれか一項に記載の半導体デバイス構造から形成される半導体デバイス。
- 請求項1から9のいずれか一項に記載の半導体構造を備える高電子移動度トランジスタ。
- SiC基板を用意する工程と、
Inx2Aly2Ga1−x2−y2N核形成層を前記SiC基板上に用意する工程であって、x2=0〜1、y2=0〜1、好ましくはx2<0.05かつy2<0.70、より好ましくはx2<0.03かつy2<0.50、最も好ましくはx2<0.01かつy2<0.30、かつx2+y2=1である工程と、
を備え、
前記核形成層の成長時の温度は、2分〜20分間、5〜25℃/分で、好ましくは7〜20℃/分で、最も好ましくは10〜15℃/分で上昇させられる、
ことを特徴とする半導体デバイス構造を製造する方法。 - SiC基板を用意する工程と、
Inx2Aly1Ga1−x2−y2N核形成層を前記SiC基板上に用意する工程であって、x2=0〜1、y2=0〜1、好ましくはx2<0.05かつy2<0.70、より好ましくはx2<0.03かつy2<0.50、最も好ましくはx2<0.01かつy2<0.30、かつx2+y2=1である工程と、
(102)ピークが250arcsec未満のFWHMを持つロッキング曲線を前記バッファ層が示すようにInx1Aly1Ga1−x1−y1Nバッファ層を前記核形成層上に用意する工程であって、x1=0〜1、y1=0〜1かつx1+y1=1、好ましくはx1<0.05かつy1<0.50、より好ましくはx1<0.03かつy1<0.30、最も好ましくはx1<0.01かつy1<0.10である工程と、
を備え、
前記核形成層は、X線回折(XRD)により測定する際に(105)ピークが200arcsec未満のFWHMを持つロッキング曲線を示す、
半導体デバイス構造を製造する方法。 - 前記基板は、H2、HCl、HF、HBrもしくはSiF4、Cl2またはH2とその他のいずれか1つとの組合せのようなエッチングガスによりin situまたはex situで前処理される、請求項11または12に記載の方法。
- 前記圧力は、少なくとも1250℃の温度で、前処理時に、100mbar〜10mbar、好ましくは60mbar〜10mbar、最も好ましくは30mbar〜10mbarである、請求項13に記載の方法。
- 前記圧力は、少なくとも1400℃の温度で、前処理時に、1000mbar〜10mbar、好ましくは500mbar〜10mbar、最も好ましくは200mbar〜10mbarである、請求項13に記載の方法。
- 前記エッチングガス、好ましくはH2は、20〜30l/分の流量で提供され、かつ/または、HClは、100〜200ml/分の流量で提供される、請求項13から15のいずれか一項に記載の方法。
- 前記核形成層と前記バッファ層との少なくとも1つを有機金属気相堆積(MOCVD)すなわち有機金属気相成長(MOVPE)、ハイドライド気相成長(HVPE)または分子線エピタキシ(MBE)により成長させる、請求項11から16のいずれか一項に記載の方法。
- MOCVDすなわちMOVPEによる核形成成長のための前駆体の少なくとも1つは、Al2(CH3)6のような有機金属であり、その他はNH3である、請求項11から17のいずれか一項に記載の方法。
- 前記前駆体はAr、H2またはN2のような少なくとも1つのキャリアガスにより用意される、請求項18に記載の方法。
- 前記核形成層の成長時の圧力は、MOCVDすなわちMOVPEについて、200mbar〜10mbar、好ましくは100mbar〜20mbar、最も好ましくは60mbar〜40mbarである、請求項11から19のいずれか一項に記載の方法。
- 前記核形成層の成長時の開始温度は、MOCVDすなわちMOVPEについて、800℃〜1150℃、好ましくは900℃〜1100℃、最も好ましくは950℃〜1050℃である、請求項11から20のいずれか一項に記載の方法。
- 前記核形成層の成長率は、MOCVDすなわちMOVPEについて、100nm/h〜1000nm/h、好ましくは150nm/h〜600nm/h、最も好ましくは200nm/h〜400nm/hである、請求項11から21のいずれか一項に記載の方法。
- 前記核形成層の成長時の圧力は、HVPEについて、200mbar〜10mbar、好ましくは100mbar〜20mbar、最も好ましくは60mbar〜40mbarである、請求項11から22のいずれか一項に記載の方法。
- 前記核形成層の成長時の開始温度は、HVPEについて、800℃〜1200℃、好ましくは900℃〜1150℃、最も好ましくは950℃〜1100℃である、請求項23に記載の方法。
- 前記核形成層の成長率は、HVPEについて、1μm/h〜100μm/h、好ましくは5μm/h〜50μm/h、最も好ましくは10μm/h〜20μnm/hである、請求項23または24に記載の方法。
- 前記核形成層の成長時の圧力は、MBEについて、1×10−3mbar〜1×10−7mbar、好ましくは5×10−3mbar〜1×10−6mbar、最も好ましくは1×10−4mbar〜1×10−5mbar(気圧)である、請求項11から25のいずれか一項に記載の方法。
- 前記核形成層の成長時の開始温度は、MBEについて、500℃〜1000℃、好ましくは550℃〜900℃、最も好ましくは600℃〜800℃である、請求項26に記載の方法。
- 前記核形成層の成長率は、MBEについて、100nm/h〜1000nm/h、好ましくは200nm/h〜800nm/h、最も好ましくは400nm/h〜600nm/hである、請求項26または27に記載の方法。
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