JP2018508344A - 非熱ソフトプラズマ洗浄 - Google Patents
非熱ソフトプラズマ洗浄 Download PDFInfo
- Publication number
- JP2018508344A JP2018508344A JP2017537976A JP2017537976A JP2018508344A JP 2018508344 A JP2018508344 A JP 2018508344A JP 2017537976 A JP2017537976 A JP 2017537976A JP 2017537976 A JP2017537976 A JP 2017537976A JP 2018508344 A JP2018508344 A JP 2018508344A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- cleaning system
- workpiece
- soft
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 123
- 239000012530 fluid Substances 0.000 claims abstract description 35
- 239000007788 liquid Substances 0.000 claims abstract description 20
- 230000005684 electric field Effects 0.000 claims abstract description 14
- 230000003321 amplification Effects 0.000 claims abstract description 13
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 13
- 230000006698 induction Effects 0.000 claims abstract description 9
- 239000007789 gas Substances 0.000 claims description 78
- 150000002500 ions Chemical class 0.000 claims description 20
- 238000012360 testing method Methods 0.000 claims description 17
- 239000000523 sample Substances 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 6
- 239000003990 capacitor Substances 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 5
- 239000002904 solvent Substances 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 239000001569 carbon dioxide Substances 0.000 claims description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 3
- 238000010408 sweeping Methods 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 239000000615 nonconductor Substances 0.000 claims description 2
- 230000003750 conditioning effect Effects 0.000 claims 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 25
- 230000008569 process Effects 0.000 abstract description 19
- 238000002679 ablation Methods 0.000 abstract description 7
- 230000001939 inductive effect Effects 0.000 abstract description 4
- 238000005530 etching Methods 0.000 abstract description 3
- 238000003070 Statistical process control Methods 0.000 description 31
- 239000000356 contaminant Substances 0.000 description 23
- 238000010586 diagram Methods 0.000 description 17
- 238000001878 scanning electron micrograph Methods 0.000 description 13
- 238000012545 processing Methods 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 239000003570 air Substances 0.000 description 8
- 238000010849 ion bombardment Methods 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- 230000008439 repair process Effects 0.000 description 3
- 231100000331 toxic Toxicity 0.000 description 3
- 230000002588 toxic effect Effects 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005108 dry cleaning Methods 0.000 description 2
- 239000003344 environmental pollutant Substances 0.000 description 2
- 238000013467 fragmentation Methods 0.000 description 2
- 238000006062 fragmentation reaction Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 231100000719 pollutant Toxicity 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000012864 cross contamination Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009760 electrical discharge machining Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000011086 high cleaning Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012625 in-situ measurement Methods 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910001414 potassium ion Inorganic materials 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32577—Electrical connecting means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32825—Working under atmospheric pressure or higher
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/335—Cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H2245/00—Applications of plasma devices
- H05H2245/10—Treatment of gases
- H05H2245/15—Ambient air; Ozonisers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
- Cleaning In General (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Coating By Spraying Or Casting (AREA)
Abstract
Description
Claims (20)
- 空気またはガスを大気圧で収容する洗浄チャンバと、前記洗浄チャンバ内に配置された電極であって、電力整合ユニットを通じて発電機に接続された電極と、前記電極と前記被加工物の間に発生するプラズマによって、プラズマ損傷を伴わずに洗浄される被加工物と、
を備えるソフトプラズマ洗浄システム。 - 前記電極の付近に配置された穴を有する誘電体部材を更に備え、それによって、前記プラズマは、前記穴を通って進み、一掃する方向で前記被加工物に到達する、請求項1に記載のソフトプラズマ洗浄システム。
- 前記プラズマにプラズマ種を加え洗浄領域を拡張するように、前記プラズマと組み合わさって放電流体流となり、前記プラズマを前記被加工物に誘導する原料ガスを更に備える、請求項2に記載のソフトプラズマ洗浄システム。
- 穴を有する第2の誘電体部材を更に備え、前記第2の誘電体部材は、プラズマ誘導・増幅コンポーネントを構成すべく、前記(第1の)誘電体部材と垂直に配置された状態にある、請求項3に記載のソフトプラズマシステム洗浄。
- 第2の穴を有する第2の誘電体部材を更に備え、前記第2の誘電体部材は、プラズマ誘導・増幅コンポーネントを構成すべく、前記(第1の)穴が前記第2の穴とは並ばないように前記(第1の)誘電体部材と平行に配置された状態にある、請求項3に記載のソフトプラズマ洗浄システム。
- 前記洗浄チャンバ内に配置された浮遊電極を更に備え、前記浮遊電極は、レジスタ、インダクタおよびコンデンサから成る調整ネットワークに接続され、前記調整ネットワークは、前記洗浄チャンバ内の電界およびイオンエネルギーを制御するためにグラウンドまたはバイアスに接続された状態にある、請求項1〜5のいずれか一項に記載のソフトプラズマ洗浄システム。
- 2つ以上の浮遊電極を備える、請求項6に記載のソフトプラズマ洗浄システム。
- 前記浮遊電極は、プレート、穿孔を有するプレートまたはグリッドメッシュである、請求項6または7に記載のソフトプラズマ洗浄システム。
- 前記被加工物に対して前記洗浄チャンバ内の前記プラズマを予備電離し、誘導し、制限するための偏向器を更に備える、請求項6〜8のいずれか一項に記載のソフトプラズマ洗浄システム。
- 前記被加工物はテストソケットであり、前記テストソケットの空洞が前記洗浄チャンバを形成する、請求項1〜9のいずれか一項に記載のソフトプラズマ洗浄システム。
- 前記被加工物は、ワイヤボンダの楔状部、半導体素子をテストするプローブカードのピン、半導体素子またはプラズマイオン損傷を受けやすい他の素子をテストするテストソケットのピンである、請求項1〜9のいずれか一項に記載のソフトプラズマ洗浄システム。
- 前記原料ガスは、不活性ガス、窒素、水素、圧縮空気、液体二酸化炭素または液体窒素である、請求項3に記載のソフトプラズマ洗浄システム。
- 液体を大気圧で収容する洗浄チャンバと、前記洗浄チャンバ内に配置された電極であって、電力整合ユニットを通じて発電機に接続された電極と、前記電極と被加工物の間に配置された浮遊電極であって、前記発電機に対してある電位に保持された状態にあり、それによって、前記被加工物は、前記浮遊電極と前記被加工物の間に発生するプラズマによって、プラズマ損傷を伴わずに洗浄される、浮遊電極と、
を備えるソフトプラズマ洗浄システム。 - 前記液体は、水、溶媒または化学溶液である、請求項13に記載のソフトプラズマ洗浄システム。
- 前記水に溶けた塩化イオンを更に備える、請求項14に記載のソフトプラズマ洗浄システム。
- 塩化イオンを有する水もしくは溶媒または化学溶液を前記洗浄チャンバに導入することを更に含む、請求項13に記載のソフトプラズマ洗浄システム。
- 原料ガスを前記洗浄チャンバに導入することを更に含む、請求項16に記載のソフトプラズマ洗浄システム。
- 前記浮遊電極は、金属、セラミック、半導体または電気絶縁体で作られており、前記ソフトプラズマ洗浄システムは、2つ以上の浮遊電極を備える、請求項13に記載のソフトプラズマ洗浄システム。
- 前記金属浮遊電極は、レジスタ、インダクタおよびコンデンサから成る調整ネットワークに接続され、前記調整ネットワークは、前記洗浄チャンバ内の電界およびイオンエネルギーを制御するために、グラウンドまたはバイアスに接続された状態にある、請求項18に記載のソフトプラズマ洗浄システム。
- 前記金属浮遊電極は、プレート、穿孔を有するプレートまたはグリッドメッシュである、請求項19に記載のソフトプラズマ洗浄システム。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SG10201500483V | 2015-01-22 | ||
SG10201500483V | 2015-01-22 | ||
PCT/SG2016/050029 WO2016118088A1 (en) | 2015-01-22 | 2016-01-22 | Non-thermal soft plasma cleaning |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2018508344A true JP2018508344A (ja) | 2018-03-29 |
JP2018508344A5 JP2018508344A5 (ja) | 2019-02-07 |
JP6832858B2 JP6832858B2 (ja) | 2021-02-24 |
Family
ID=56417484
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017537976A Active JP6832858B2 (ja) | 2015-01-22 | 2016-01-22 | 非熱ソフトプラズマ洗浄 |
Country Status (8)
Country | Link |
---|---|
US (1) | US10672592B2 (ja) |
JP (1) | JP6832858B2 (ja) |
KR (1) | KR102443097B1 (ja) |
CN (1) | CN207587690U (ja) |
MY (1) | MY182688A (ja) |
SG (1) | SG11201705969VA (ja) |
TW (1) | TWI726863B (ja) |
WO (1) | WO2016118088A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102054147B1 (ko) * | 2019-10-21 | 2019-12-12 | 주식회사 아이엠티 | 테스트 장치 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA3062202C (en) * | 2017-05-01 | 2023-08-15 | General Fusion Inc. | Methods and systems for imploding a liquid liner |
US10284244B1 (en) * | 2018-05-24 | 2019-05-07 | Motorola Mobility Llc | Method and apparatus for coupling one or more transceivers to a plurality of antennas |
TWI831844B (zh) * | 2018-10-05 | 2024-02-11 | 美商色拉頓系統公司 | 高電壓探針卡系統 |
US11047880B2 (en) | 2019-01-16 | 2021-06-29 | Star Technologies, Inc. | Probing device |
KR102323438B1 (ko) | 2020-02-25 | 2021-11-05 | 연세대학교 산학협력단 | 전기장 셰이핑 장치 및 전기장을 이용한 타겟 처리 장치 |
CN114308898A (zh) * | 2020-09-28 | 2022-04-12 | 扬中市华龙橡塑电器有限公司 | 一种新型高效挤塑板 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0272620A (ja) * | 1988-09-07 | 1990-03-12 | Anelva Corp | プラズマ処理装置 |
JPH11507990A (ja) * | 1995-06-02 | 1999-07-13 | ザ・ユニヴァーシティ・オヴ・テネシー・リサーチ・コーポレイション | 大気圧でのグロー放電プラズマによる表面洗浄装置および洗浄方法 |
JP2012021223A (ja) * | 2010-07-14 | 2012-02-02 | Plasma Ion Assist Co Ltd | プラズマ処理装置及びコンタクトプローブの表面改質方法 |
JP2013527777A (ja) * | 2010-03-31 | 2013-07-04 | コロラド ステート ユニバーシティー リサーチ ファウンデーション | 液体−気体界面プラズマデバイス |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6379575B1 (en) * | 1997-10-21 | 2002-04-30 | Applied Materials, Inc. | Treatment of etching chambers using activated cleaning gas |
US6610257B2 (en) * | 1999-01-11 | 2003-08-26 | Ronald A. Vane | Low RF power electrode for plasma generation of oxygen radicals from air |
US6118218A (en) * | 1999-02-01 | 2000-09-12 | Sigma Technologies International, Inc. | Steady-state glow-discharge plasma at atmospheric pressure |
US5997705A (en) | 1999-04-14 | 1999-12-07 | Vapor Technologies, Inc. | Rectangular filtered arc plasma source |
US6972071B1 (en) * | 1999-07-13 | 2005-12-06 | Nordson Corporation | High-speed symmetrical plasma treatment system |
US6329297B1 (en) | 2000-04-21 | 2001-12-11 | Applied Materials, Inc. | Dilute remote plasma clean |
US6835678B2 (en) | 2000-05-04 | 2004-12-28 | Kimberly-Clark Worldwide, Inc. | Ion sensitive, water-dispersible fabrics, a method of making same and items using same |
EP1170066A1 (de) * | 2000-07-05 | 2002-01-09 | Förnsel, Peter | Verfahren und Vorrichtung zum Reinigen von Walzen oder Bänder |
US7159597B2 (en) * | 2001-06-01 | 2007-01-09 | Applied Materials, Inc. | Multistep remote plasma clean process |
US6843858B2 (en) * | 2002-04-02 | 2005-01-18 | Applied Materials, Inc. | Method of cleaning a semiconductor processing chamber |
JP4338355B2 (ja) * | 2002-05-10 | 2009-10-07 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US7588036B2 (en) * | 2002-07-01 | 2009-09-15 | Applied Materials, Inc. | Chamber clean method using remote and in situ plasma cleaning systems |
US6906280B2 (en) | 2003-03-21 | 2005-06-14 | The Regents Of The University Of California | Fast pulse nonthermal plasma reactor |
US6903511B2 (en) * | 2003-05-06 | 2005-06-07 | Zond, Inc. | Generation of uniformly-distributed plasma |
FR2863817A1 (fr) | 2003-12-12 | 2005-06-17 | Air Liquide | Tuyere a deflecteur pour torche a l'arc plasma |
US8471171B2 (en) | 2004-05-28 | 2013-06-25 | Robert O. Price | Cold air atmospheric pressure micro plasma jet application method and device |
KR100603434B1 (ko) * | 2004-12-30 | 2006-07-20 | (주)프로닉스 | 플라즈마 세정장치 |
US7651585B2 (en) * | 2005-09-26 | 2010-01-26 | Lam Research Corporation | Apparatus for the removal of an edge polymer from a substrate and methods therefor |
US20070170155A1 (en) | 2006-01-20 | 2007-07-26 | Fink Steven T | Method and apparatus for modifying an etch profile |
US7695567B2 (en) * | 2006-02-10 | 2010-04-13 | Applied Materials, Inc. | Water vapor passivation of a wall facing a plasma |
US8100081B1 (en) | 2006-06-30 | 2012-01-24 | Novellus Systems, Inc. | Edge removal of films using externally generated plasma species |
US7754994B2 (en) | 2006-12-13 | 2010-07-13 | Atomic Energy Council | Cleaning device using atmospheric gas discharge plasma |
JP4700633B2 (ja) * | 2007-02-15 | 2011-06-15 | 株式会社新川 | ワイヤ洗浄ガイド |
CN101284711B (zh) * | 2007-04-11 | 2011-01-26 | 赖中平 | 可携带式常压电浆清洁机 |
US8440142B2 (en) * | 2008-03-14 | 2013-05-14 | Atomic Energy Council—Institute of Nuclear Energy Research | Dual-mode plasma reactor |
US20110000432A1 (en) * | 2008-06-12 | 2011-01-06 | Atomic Energy Council - Institute Of Nuclear Energy Research | One atmospheric pressure non-thermal plasma reactor with dual discharging-electrode structure |
JP5492574B2 (ja) * | 2010-01-08 | 2014-05-14 | 東京エレクトロン株式会社 | 基板のクリーニング方法及び基板のクリーニング装置 |
WO2012004175A1 (en) * | 2010-07-09 | 2012-01-12 | Vito Nv | Method and device for atmospheric pressure plasma treatment |
JP2012174922A (ja) * | 2011-02-22 | 2012-09-10 | Central Glass Co Ltd | クリーニングガス及びそれを用いたリモートプラズマクリーニング方法 |
KR102139391B1 (ko) | 2012-05-18 | 2020-07-30 | 레이브 엔.피., 인크. | 오염 제거 장치 및 방법 |
US9793098B2 (en) * | 2012-09-14 | 2017-10-17 | Vapor Technologies, Inc. | Low pressure arc plasma immersion coating vapor deposition and ion treatment |
US9514953B2 (en) * | 2013-11-20 | 2016-12-06 | Applied Materials, Inc. | Methods for barrier layer removal |
-
2016
- 2016-01-22 JP JP2017537976A patent/JP6832858B2/ja active Active
- 2016-01-22 CN CN201690000444.8U patent/CN207587690U/zh active Active
- 2016-01-22 MY MYPI2017702671A patent/MY182688A/en unknown
- 2016-01-22 SG SG11201705969VA patent/SG11201705969VA/en unknown
- 2016-01-22 WO PCT/SG2016/050029 patent/WO2016118088A1/en active Application Filing
- 2016-01-22 TW TW105102159A patent/TWI726863B/zh active
- 2016-01-22 US US15/545,265 patent/US10672592B2/en active Active
- 2016-01-22 KR KR1020177021732A patent/KR102443097B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0272620A (ja) * | 1988-09-07 | 1990-03-12 | Anelva Corp | プラズマ処理装置 |
JPH11507990A (ja) * | 1995-06-02 | 1999-07-13 | ザ・ユニヴァーシティ・オヴ・テネシー・リサーチ・コーポレイション | 大気圧でのグロー放電プラズマによる表面洗浄装置および洗浄方法 |
JP2013527777A (ja) * | 2010-03-31 | 2013-07-04 | コロラド ステート ユニバーシティー リサーチ ファウンデーション | 液体−気体界面プラズマデバイス |
JP2012021223A (ja) * | 2010-07-14 | 2012-02-02 | Plasma Ion Assist Co Ltd | プラズマ処理装置及びコンタクトプローブの表面改質方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102054147B1 (ko) * | 2019-10-21 | 2019-12-12 | 주식회사 아이엠티 | 테스트 장치 |
Also Published As
Publication number | Publication date |
---|---|
US20180019106A1 (en) | 2018-01-18 |
KR102443097B1 (ko) | 2022-09-14 |
TW201638988A (zh) | 2016-11-01 |
KR20170106363A (ko) | 2017-09-20 |
WO2016118088A1 (en) | 2016-07-28 |
TWI726863B (zh) | 2021-05-11 |
US10672592B2 (en) | 2020-06-02 |
MY182688A (en) | 2021-01-29 |
JP6832858B2 (ja) | 2021-02-24 |
SG11201705969VA (en) | 2017-08-30 |
CN207587690U (zh) | 2018-07-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6832858B2 (ja) | 非熱ソフトプラズマ洗浄 | |
TWI415186B (zh) | 自基材移除氟化聚合物的設備與方法 | |
TWI392000B (zh) | 自基材移除邊緣聚合物的設備與方法 | |
KR101335120B1 (ko) | 플라즈마 프로세싱 시스템에서 대기 플라즈마의 최적화를위한 장치 | |
US5849135A (en) | Particulate contamination removal from wafers using plasmas and mechanical agitation | |
KR100787019B1 (ko) | 하향 플라즈마를 이용한 유전체 에칭의 향상된 레지스트스트립 | |
TWI423314B (zh) | 藉由電子附著來移除表面氧化物的方法 | |
KR102359795B1 (ko) | 반도체 웨이퍼를 세정하는 방법 및 장치 | |
TWI389189B (zh) | 藉由電子附著來移除表面氧化物的方法 | |
JP2003171757A (ja) | レーザを用いる乾式表面クリーニング装置 | |
US10468236B2 (en) | Plasma device with an external RF hollow cathode for plasma cleaning of high vacuum systems | |
JP2010212424A (ja) | シャワーヘッド及びプラズマ処理装置 | |
JP6995999B2 (ja) | ワークピース処理用の低粒子容量結合成分 | |
JP2018508344A5 (ja) | ||
TWI728187B (zh) | 差異原位清潔用的工件加工裝置 | |
JP2004527071A (ja) | 大気圧無線周波数ノンサーマルプラズマ放電内での材料の処理 | |
KR100491140B1 (ko) | 대기압 플라즈마를 이용한 표면 세정방법 및 장치 | |
KR102655533B1 (ko) | 기판을 세정하는 방법 및 장치 | |
JP5271456B2 (ja) | プラズマ処理装置及びプラズマ処理方法 | |
KR20020085149A (ko) | 상온/상압에서의 플라즈마 건식세정장치 | |
JP3404434B2 (ja) | マイクロ波プラズマ装置のクリーニング方法 | |
US10350652B2 (en) | Methods and systems for plasma cleaning a container using a magnet | |
KR200306427Y1 (ko) | 대기압 플라즈마를 이용한 표면 세정 장치 | |
Korzec et al. | Large area lubricant removal by use of capacitively coupled RF and slot antenna microwave plasma source | |
KR100946385B1 (ko) | Icp 방식의 고밀도 반도체 몰드 금형 세정장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170922 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181220 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190108 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190419 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190425 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190917 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190913 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20191217 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200217 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20200414 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200814 |
|
C60 | Trial request (containing other claim documents, opposition documents) |
Free format text: JAPANESE INTERMEDIATE CODE: C60 Effective date: 20200814 |
|
C11 | Written invitation by the commissioner to file amendments |
Free format text: JAPANESE INTERMEDIATE CODE: C11 Effective date: 20200908 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20201013 |
|
C21 | Notice of transfer of a case for reconsideration by examiners before appeal proceedings |
Free format text: JAPANESE INTERMEDIATE CODE: C21 Effective date: 20201016 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210112 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210202 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6832858 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |