JP2018182322A5 - - Google Patents

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JP2018182322A5
JP2018182322A5 JP2018075109A JP2018075109A JP2018182322A5 JP 2018182322 A5 JP2018182322 A5 JP 2018182322A5 JP 2018075109 A JP2018075109 A JP 2018075109A JP 2018075109 A JP2018075109 A JP 2018075109A JP 2018182322 A5 JP2018182322 A5 JP 2018182322A5
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substrate
deposited
etching
nucleation delay
deposition
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JP2018075109A 2017-04-19 2018-04-10 原子層エッチングのリセットを伴う選択的堆積 Pending JP2018182322A (ja)

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US201762487411P 2017-04-19 2017-04-19
US62/487,411 2017-04-19
US15/581,951 US10559461B2 (en) 2017-04-19 2017-04-28 Selective deposition with atomic layer etch reset
US15/581,951 2017-04-28

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JP2018182322A JP2018182322A (ja) 2018-11-15
JP2018182322A5 true JP2018182322A5 (enExample) 2018-12-27

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US (2) US10559461B2 (enExample)
JP (1) JP2018182322A (enExample)
KR (3) KR102608585B1 (enExample)
CN (1) CN108735675B (enExample)
SG (1) SG10201800863VA (enExample)
TW (1) TW201903833A (enExample)

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