JP2018163972A - 半導体装置 - Google Patents
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- JP2018163972A JP2018163972A JP2017060012A JP2017060012A JP2018163972A JP 2018163972 A JP2018163972 A JP 2018163972A JP 2017060012 A JP2017060012 A JP 2017060012A JP 2017060012 A JP2017060012 A JP 2017060012A JP 2018163972 A JP2018163972 A JP 2018163972A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 76
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 239000012535 impurity Substances 0.000 claims description 31
- 238000010586 diagram Methods 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 11
- 230000003071 parasitic effect Effects 0.000 description 6
- 230000001939 inductive effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000010992 reflux Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000004645 scanning capacitance microscopy Methods 0.000 description 3
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
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- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0928—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising both N- and P- wells in the substrate, e.g. twin-tub
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- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
図1(a)に示すように、モータドライバ100は、例えば、マイクロコントローラ200からの制御信号に基づき、駆動電力を出力し、モータ300の駆動及び制御を行う。
11 ソース電極
12 ドレイン電極
13 ゲート電極
14 p型領域(第1のp型領域)
16 埋め込み領域(第1のn型領域)
18 接続領域(第2のn型領域)
21 n型ソース領域
22 n型ドレイン領域
24 pウェル領域(第2のp型領域)
26 ドリフト領域(第3のn型領域)
100 モータドライバ(半導体装置)
Claims (5)
- 第1の面と第2の面を有し、第1のp型領域を有する半導体基板と、
前記第1の面の上に設けられた複数のソース電極と、
前記第1の面の上に、前記複数のソース電極の間に設けられた複数のドレイン電極と、
前記第1の面の上に、前記複数のソース電極と前記複数のドレイン電極との間に設けられた複数のゲート電極と、
前記半導体基板の中に設けられ、前記複数のソース電極に電気的に接続され第1の方向に伸長する複数のn型ソース領域と、
前記半導体基板の中に設けられ、前記複数のドレイン電極に電気的に接続され前記第1の方向に伸長する複数のn型ドレイン領域と、
前記半導体基板の中に設けられ、前記複数のn型ソース領域との間に前記第1のp型領域を挟み、前記複数のn型ドレイン領域との間に前記第1のp型領域を挟み、前記第1の方向に伸長する複数の第1のn型領域と、を備え、
前記複数の第1のn型領域の内の1つの第1のn型領域と前記複数のソース電極との距離が、前記1つの第1のn型領域と前記複数のドレイン電極との距離よりも短い半導体装置。 - 前記半導体基板内に設けられ、前記複数のn型ソース領域及び前記複数のn型ドレイン領域を囲み、前記第1の面及び前記複数の第1のn型領域に接する第2のn型領域を、更に備える請求項1記載の半導体装置。
- 前記第1のn型領域はグラウンド電位に固定される請求項1又は請求項2記載の半導体装置。
- 前記複数のソース電極、前記複数のドレイン電極、及び、前記複数のゲート電極が前記第1の方向に伸長する請求項1ないし請求項3いずれか一項記載の半導体装置。
- 前記半導体基板内に、前記複数のn型ソース領域と前記第1のp型領域との間に設けられ前記第1のp型領域よりもp型不純物濃度の高い複数の第2のp型領域と、
前記半導体基板内に、前記複数のn型ドレイン領域と前記第1のp型領域との間に設けられ前記複数のn型ドレイン領域よりもn型不純物濃度の低い複数の第3のn型領域とを、更に備える請求項1ないし請求項4いずれか一項記載の半導体装置。
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JP2017060012A JP6677672B2 (ja) | 2017-03-24 | 2017-03-24 | 半導体装置 |
US15/708,243 US10199452B2 (en) | 2017-03-24 | 2017-09-19 | Semiconductor device |
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JP2017060012A JP6677672B2 (ja) | 2017-03-24 | 2017-03-24 | 半導体装置 |
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JP2018163972A true JP2018163972A (ja) | 2018-10-18 |
JP6677672B2 JP6677672B2 (ja) | 2020-04-08 |
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Cited By (1)
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WO2020045244A1 (ja) | 2018-08-31 | 2020-03-05 | キヤノン株式会社 | 顔料分散体並びに該顔料分散体を用いたカラーフィルター用レジスト組成物、インク組成物 |
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US9911845B2 (en) * | 2015-12-10 | 2018-03-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | High voltage LDMOS transistor and methods for manufacturing the same |
JP7222847B2 (ja) * | 2019-08-26 | 2023-02-15 | 株式会社東芝 | 半導体装置 |
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JP4595002B2 (ja) | 2008-07-09 | 2010-12-08 | 株式会社東芝 | 半導体装置 |
JP2010283366A (ja) | 2010-07-23 | 2010-12-16 | Toshiba Corp | 半導体装置 |
JP5898473B2 (ja) | 2011-11-28 | 2016-04-06 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US9142554B2 (en) | 2012-06-29 | 2015-09-22 | Freescale Semiconductor, Inc. | Semiconductor device and driver circuit with an active device and isolation structure interconnected through a diode circuit, and method of manufacture thereof |
JP6222825B2 (ja) | 2012-11-07 | 2017-11-01 | エヌエックスピー ユーエスエイ インコーポレイテッドNXP USA,Inc. | ダイオード回路を通じて相互接続される能動素子および分離構造を有する半導体デバイスおよびドライバ回路、ならびにその製造方法 |
US9887288B2 (en) * | 2015-12-02 | 2018-02-06 | Texas Instruments Incorporated | LDMOS device with body diffusion self-aligned to gate |
US9748330B2 (en) * | 2016-01-11 | 2017-08-29 | Semiconductor Component Industries, Llc | Semiconductor device having self-isolating bulk substrate and method therefor |
US10804389B2 (en) * | 2016-02-25 | 2020-10-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | LDMOS transistor |
US9929144B2 (en) * | 2016-04-15 | 2018-03-27 | International Business Machines Corporation | Laterally diffused metal oxide semiconductor device integrated with vertical field effect transistor |
KR102452999B1 (ko) * | 2016-05-03 | 2022-10-07 | 삼성전자주식회사 | 반도체 장치 제조 방법 |
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WO2020045244A1 (ja) | 2018-08-31 | 2020-03-05 | キヤノン株式会社 | 顔料分散体並びに該顔料分散体を用いたカラーフィルター用レジスト組成物、インク組成物 |
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