JP2018148169A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2018148169A JP2018148169A JP2017044865A JP2017044865A JP2018148169A JP 2018148169 A JP2018148169 A JP 2018148169A JP 2017044865 A JP2017044865 A JP 2017044865A JP 2017044865 A JP2017044865 A JP 2017044865A JP 2018148169 A JP2018148169 A JP 2018148169A
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- Prior art keywords
- solder
- metal plate
- thickness
- heat sink
- joined
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 88
- 229910000679 solder Inorganic materials 0.000 claims abstract description 270
- 239000011347 resin Substances 0.000 claims abstract description 42
- 229920005989 resin Polymers 0.000 claims abstract description 42
- 239000002184 metal Substances 0.000 claims description 93
- 229910052751 metal Inorganic materials 0.000 claims description 93
- 230000008014 freezing Effects 0.000 claims description 37
- 238000007710 freezing Methods 0.000 claims description 37
- 238000007711 solidification Methods 0.000 claims description 8
- 230000008023 solidification Effects 0.000 claims description 8
- 239000007787 solid Substances 0.000 abstract 5
- 125000006850 spacer group Chemical group 0.000 description 30
- 239000000463 material Substances 0.000 description 13
- 238000012986 modification Methods 0.000 description 8
- 230000004048 modification Effects 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 230000005855 radiation Effects 0.000 description 5
- 238000005304 joining Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
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Abstract
Description
2a:アセンブリ
3:第1トランジスタ素子
4:第1ダイオード素子
5:第2トランジスタ素子
5b:エミッタ電極
6:第2ダイオード素子
7a−7d:スペーサ
9:樹脂パッケージ
12、15、22、25:放熱板
13、313:第1継手
14:O端子
16:継手
18a、18b、18c:ハンダ(第1ハンダ)
28a、28b、28c:ハンダ(第2ハンダ)
38、338:ハンダ(第3ハンダ)
42:リードフレーム
Claims (3)
- 両面に電極を備えている第1半導体素子及び第2半導体素子と、
前記第1半導体素子を挟んでおり、前記第1半導体素子の夫々の前記電極と第1ハンダで接合されている第1及び第2金属板と、
前記第2半導体素子を挟んでおり、前記第2半導体素子の夫々の前記電極と第2ハンダで接合されている第3及び第4金属板と、
前記第1半導体素子と前記第2半導体素子を封止している樹脂パッケージであって、その一面に前記第1金属板と前記第3金属板が露出しているとともに、反対面に前記第2金属板と前記第4金属板が露出している樹脂パッケージと、
を備えており、
前記第1金属板の縁から第1継手が延びているとともに前記第4金属板の縁から第2継手が延びており、前記第1継手と前記第2継手が、前記第1金属板と前記第1半導体素子の積層方向からみて重なっているとともに第3ハンダで接合されており、
前記第1ハンダの凝固点が前記第3ハンダの凝固点よりも高く、かつ、前記第2ハンダの凝固点が前記第3ハンダの凝固点よりも高い、半導体装置。 - 前記第1金属板と前記第2金属板の間の前記第1ハンダの合計の厚みの凝固時の推定収縮量が、前記第3ハンダの厚み以下であり、
前記第3金属板と前記第4金属板の間の前記第2ハンダの合計の厚みの凝固時の推定収縮量が、前記第3ハンダの厚み以下である、請求項1に記載の半導体装置。 - 前記第1金属板と前記第2金属板の間の前記第1ハンダの合計の厚みが、前記第3ハンダの厚み以下であり、
前記第3金属板と前記第4金属板の間の前記第2ハンダの合計の厚みが、前記第3ハンダの厚み以下である、請求項2に記載の半導体装置。
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CN201810182489.7A CN108573937B (zh) | 2017-03-09 | 2018-03-06 | 半导体装置 |
DE102018105356.8A DE102018105356B4 (de) | 2017-03-09 | 2018-03-08 | Halbleitervorrichtung |
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JP7043225B2 (ja) | 2017-11-08 | 2022-03-29 | 株式会社東芝 | 半導体装置 |
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DE102020206464A1 (de) | 2020-05-25 | 2021-11-25 | Zf Friedrichshafen Ag | Verfahren zur Herstellung eines Halbbrückenmoduls, eines Inverters, Halbbrückenmodul und Inverter |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001274177A (ja) * | 2000-03-24 | 2001-10-05 | Denso Corp | 半導体装置及びその製造方法 |
JP2002076254A (ja) * | 2000-08-24 | 2002-03-15 | Fuji Electric Co Ltd | パワー半導体モジュール及びその製造方法 |
JP2005286121A (ja) * | 2004-03-30 | 2005-10-13 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2007281274A (ja) * | 2006-04-10 | 2007-10-25 | Denso Corp | 半導体装置 |
JP2014179443A (ja) * | 2013-03-14 | 2014-09-25 | Denso Corp | 半導体装置及びその製造方法 |
JP2016092166A (ja) * | 2014-11-04 | 2016-05-23 | トヨタ自動車株式会社 | 半導体装置とその製造方法 |
JP2016213346A (ja) * | 2015-05-11 | 2016-12-15 | 株式会社デンソー | 半導体装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4302607B2 (ja) * | 2004-01-30 | 2009-07-29 | 株式会社デンソー | 半導体装置 |
CA2760623A1 (en) * | 2009-07-17 | 2011-01-20 | Sumitomo Bakelite Co., Ltd. | Method for manufacturing electronic component, and electronic component |
JP5947537B2 (ja) | 2011-04-19 | 2016-07-06 | トヨタ自動車株式会社 | 半導体装置及びその製造方法 |
US9312211B2 (en) * | 2012-03-07 | 2016-04-12 | Toyota Jidosha Kabushiki Kaisha | Semiconductor device and manufacturing method thereof |
JP6114149B2 (ja) | 2013-09-05 | 2017-04-12 | トヨタ自動車株式会社 | 半導体装置 |
JP5854011B2 (ja) * | 2013-09-06 | 2016-02-09 | トヨタ自動車株式会社 | 半導体装置、及び半導体装置の製造方法 |
JP2015056641A (ja) * | 2013-09-13 | 2015-03-23 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP6221542B2 (ja) * | 2013-09-16 | 2017-11-01 | 株式会社デンソー | 半導体装置 |
JP6154342B2 (ja) * | 2013-12-06 | 2017-06-28 | トヨタ自動車株式会社 | 半導体装置 |
JP6125984B2 (ja) * | 2013-12-11 | 2017-05-10 | トヨタ自動車株式会社 | 半導体装置 |
JP6294110B2 (ja) | 2014-03-10 | 2018-03-14 | トヨタ自動車株式会社 | 半導体装置 |
JP6578900B2 (ja) * | 2014-12-10 | 2019-09-25 | 株式会社デンソー | 半導体装置及びその製造方法 |
JP2017107907A (ja) | 2015-12-07 | 2017-06-15 | トヨタ自動車株式会社 | 半導体装置 |
JP6512231B2 (ja) * | 2017-01-27 | 2019-05-15 | トヨタ自動車株式会社 | 半導体装置 |
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Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001274177A (ja) * | 2000-03-24 | 2001-10-05 | Denso Corp | 半導体装置及びその製造方法 |
JP2002076254A (ja) * | 2000-08-24 | 2002-03-15 | Fuji Electric Co Ltd | パワー半導体モジュール及びその製造方法 |
JP2005286121A (ja) * | 2004-03-30 | 2005-10-13 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2007281274A (ja) * | 2006-04-10 | 2007-10-25 | Denso Corp | 半導体装置 |
JP2014179443A (ja) * | 2013-03-14 | 2014-09-25 | Denso Corp | 半導体装置及びその製造方法 |
JP2016092166A (ja) * | 2014-11-04 | 2016-05-23 | トヨタ自動車株式会社 | 半導体装置とその製造方法 |
JP2016213346A (ja) * | 2015-05-11 | 2016-12-15 | 株式会社デンソー | 半導体装置 |
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