JP2018148129A - 熱処理装置 - Google Patents
熱処理装置 Download PDFInfo
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- JP2018148129A JP2018148129A JP2017043994A JP2017043994A JP2018148129A JP 2018148129 A JP2018148129 A JP 2018148129A JP 2017043994 A JP2017043994 A JP 2017043994A JP 2017043994 A JP2017043994 A JP 2017043994A JP 2018148129 A JP2018148129 A JP 2018148129A
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- 238000007669 thermal treatment Methods 0.000 title abstract 2
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 79
- 150000002367 halogens Chemical class 0.000 claims abstract description 79
- 239000000758 substrate Substances 0.000 claims abstract description 67
- 239000010453 quartz Substances 0.000 claims abstract description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 29
- 230000001678 irradiating effect Effects 0.000 claims abstract description 10
- 238000010438 heat treatment Methods 0.000 claims description 112
- 230000002093 peripheral effect Effects 0.000 claims description 46
- 230000007246 mechanism Effects 0.000 claims description 35
- 238000012545 processing Methods 0.000 claims description 17
- 238000002834 transmittance Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 abstract description 149
- 230000005855 radiation Effects 0.000 abstract description 20
- 238000009826 distribution Methods 0.000 abstract description 19
- 238000010521 absorption reaction Methods 0.000 abstract description 7
- 230000003287 optical effect Effects 0.000 abstract 5
- 239000012466 permeate Substances 0.000 abstract 1
- 230000031700 light absorption Effects 0.000 description 66
- 238000012546 transfer Methods 0.000 description 53
- 239000007789 gas Substances 0.000 description 40
- 239000012535 impurity Substances 0.000 description 16
- 229910052724 xenon Inorganic materials 0.000 description 13
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 238000000137 annealing Methods 0.000 description 8
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- 229910001873 dinitrogen Inorganic materials 0.000 description 5
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- 238000009792 diffusion process Methods 0.000 description 3
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- 238000005468 ion implantation Methods 0.000 description 3
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- 238000005259 measurement Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
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- 239000012530 fluid Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
- H01L21/2253—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase by ion implantation
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
- H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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Abstract
【解決手段】石英のサセプタ74に保持された半導体ウェハーWの下方からハロゲンランプによって光照射がなされて予備加熱が行われ、その後上方からフラッシュランプによってフラッシュ光照射がなされる。サセプタ74に保持された半導体ウェハーWの周縁部に近接するように光吸収リング20が設けられる。光吸収リング20は、赤外光を吸収し、かつ、可視光を透過する。予備加熱時には光吸収リング20がハロゲンランプHLから出射された光を吸収して昇温し、ウェハー周縁部から放出された熱を補償して半導体ウェハーWの面内温度分布を均一にする。その一方、フラッシュ光は光吸収リング20を透過するため、フラッシュ光照射による光吸収リング20の損傷は防止される。
【選択図】図3
Description
3 制御部
4 ハロゲン加熱部
5 フラッシュ加熱部
6 チャンバー
7 保持部
10 移載機構
20 光吸収リング
25 昇降駆動部
29 被覆部材
65 熱処理空間
74 サセプタ
75 保持プレート
77 基板支持ピン
120 放射温度計
FL フラッシュランプ
HL ハロゲンランプ
W 半導体ウェハー
Claims (5)
- 基板にフラッシュ光を照射することによって当該基板を加熱する熱処理装置であって、
基板を収容するチャンバーと、
前記チャンバー内にて前記基板を保持する石英のサセプタと、
前記チャンバーの下方に設けられ、前記サセプタに保持された前記基板の下面に光を照射するハロゲンランプと、
前記チャンバーの上方に設けられ、前記サセプタに保持された前記基板の上面にフラッシュ光を照射するフラッシュランプと、
前記サセプタに保持された前記基板の周縁部に近接するように設けられ、赤外光を吸収し、かつ、可視光を透過する赤外光吸収部材と、
を備えることを特徴とする熱処理装置。 - 基板にフラッシュ光を照射することによって当該基板を加熱する熱処理装置であって、
基板を収容するチャンバーと、
前記チャンバー内にて前記基板を保持する石英のサセプタと、
前記チャンバーの下方に設けられ、前記サセプタに保持された前記基板の下面に光を照射するハロゲンランプと、
前記チャンバーの上方に設けられ、前記サセプタに保持された前記基板の上面にフラッシュ光を照射するフラッシュランプと、
前記サセプタに保持された前記基板の周縁部に近接するように設けられ、赤外光の透過率が20%以下、かつ、可視光の透過率が60%以上の赤外光吸収部材と、
を備えることを特徴とする熱処理装置。 - 請求項1または請求項2記載の熱処理装置において、
前記チャンバー内にて前記赤外光吸収部材を上下動させる駆動機構をさらに備えることを特徴とする熱処理装置。 - 請求項1から請求項3のいずれかに記載の熱処理装置において、
前記赤外光吸収部材が石英の被覆部材によって覆われることを特徴とする熱処理装置。 - 請求項1から請求項4のいずれかに記載の熱処理装置において、
前記サセプタの平面サイズは前記基板の平面サイズよりも小さいことを特徴とする熱処理装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017043994A JP6770915B2 (ja) | 2017-03-08 | 2017-03-08 | 熱処理装置 |
TW106142372A TWI652739B (zh) | 2017-03-08 | 2017-12-04 | 熱處理裝置 |
KR1020180009320A KR102093007B1 (ko) | 2017-03-08 | 2018-01-25 | 열처리 장치 |
US15/907,262 US10861720B2 (en) | 2017-03-08 | 2018-02-27 | Heat treatment apparatus of light irradiation type |
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JP7176904B2 (ja) * | 2018-09-21 | 2022-11-22 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
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Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001023914A (ja) * | 1999-07-08 | 2001-01-26 | New Japan Radio Co Ltd | 半導体基板の熱処理方法 |
JP2002222768A (ja) * | 2001-01-24 | 2002-08-09 | Ibiden Co Ltd | 半導体用治具 |
JP2003513442A (ja) * | 1999-10-28 | 2003-04-08 | シュテアク エルテーペー システムズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | サブストレートを熱処理する方法及び装置 |
JP2007227461A (ja) * | 2006-02-21 | 2007-09-06 | Shin Etsu Handotai Co Ltd | 熱処理装置および熱処理方法 |
JP2010225645A (ja) * | 2009-03-19 | 2010-10-07 | Dainippon Screen Mfg Co Ltd | 熱処理装置 |
JP2011145442A (ja) * | 2010-01-14 | 2011-07-28 | Seiko Epson Corp | 光学物品およびその製造方法 |
JP2013069962A (ja) * | 2011-09-26 | 2013-04-18 | Dainippon Screen Mfg Co Ltd | 熱処理方法および熱処理装置 |
JP2013206896A (ja) * | 2012-03-27 | 2013-10-07 | Dainippon Screen Mfg Co Ltd | 熱処理装置 |
JP2014011256A (ja) * | 2012-06-28 | 2014-01-20 | Dainippon Screen Mfg Co Ltd | 熱処理方法および熱処理装置 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2513115Y2 (ja) * | 1989-04-24 | 1996-10-02 | シャープ株式会社 | フィルタを有する露光装置 |
US5446825A (en) * | 1991-04-24 | 1995-08-29 | Texas Instruments Incorporated | High performance multi-zone illuminator module for semiconductor wafer processing |
US5715361A (en) * | 1995-04-13 | 1998-02-03 | Cvc Products, Inc. | Rapid thermal processing high-performance multizone illuminator for wafer backside heating |
US5861609A (en) * | 1995-10-02 | 1999-01-19 | Kaltenbrunner; Guenter | Method and apparatus for rapid thermal processing |
KR19980016834A (ko) * | 1996-08-29 | 1998-06-05 | 김광호 | 급속 열처리 장치 |
US6310328B1 (en) | 1998-12-10 | 2001-10-30 | Mattson Technologies, Inc. | Rapid thermal processing chamber for processing multiple wafers |
US7038173B2 (en) * | 2002-02-07 | 2006-05-02 | Dainippon Screen Mfg. Co., Ltd. | Thermal processing apparatus and thermal processing method |
JP5507274B2 (ja) * | 2010-01-29 | 2014-05-28 | 大日本スクリーン製造株式会社 | 熱処理方法および熱処理装置 |
WO2012086012A1 (ja) * | 2010-12-21 | 2012-06-28 | キヤノンアネルバ株式会社 | 基板熱処理装置 |
JP5819633B2 (ja) * | 2011-05-13 | 2015-11-24 | 株式会社Screenホールディングス | 熱処理装置および熱処理方法 |
JP5855353B2 (ja) * | 2011-05-13 | 2016-02-09 | 株式会社Screenホールディングス | 熱処理装置および熱処理方法 |
JP5977038B2 (ja) * | 2012-02-15 | 2016-08-24 | 株式会社Screenホールディングス | 熱処理装置 |
JP5996409B2 (ja) * | 2012-12-12 | 2016-09-21 | 株式会社Screenホールディングス | 熱処理装置および熱処理方法 |
JP6234674B2 (ja) * | 2012-12-13 | 2017-11-22 | 株式会社Screenホールディングス | 熱処理装置 |
JP6184697B2 (ja) * | 2013-01-24 | 2017-08-23 | 株式会社Screenホールディングス | 熱処理装置および熱処理方法 |
JP2014175637A (ja) | 2013-03-13 | 2014-09-22 | Dainippon Screen Mfg Co Ltd | 熱処理装置および熱処理方法 |
JP6455962B2 (ja) | 2013-03-18 | 2019-01-23 | 芝浦メカトロニクス株式会社 | 基板処理装置及び基板処理方法 |
CN107207323B (zh) * | 2015-02-06 | 2020-12-11 | Agc株式会社 | 玻璃基板、层叠基板以及玻璃基板的制造方法 |
US10475674B2 (en) * | 2015-03-25 | 2019-11-12 | SCREEN Holdings Co., Ltd. | Light irradiation type heat treatment apparatus and method for manufacturing heat treatment apparatus |
-
2017
- 2017-03-08 JP JP2017043994A patent/JP6770915B2/ja active Active
- 2017-12-04 TW TW106142372A patent/TWI652739B/zh active
-
2018
- 2018-01-25 KR KR1020180009320A patent/KR102093007B1/ko active IP Right Grant
- 2018-02-27 US US15/907,262 patent/US10861720B2/en active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001023914A (ja) * | 1999-07-08 | 2001-01-26 | New Japan Radio Co Ltd | 半導体基板の熱処理方法 |
JP2003513442A (ja) * | 1999-10-28 | 2003-04-08 | シュテアク エルテーペー システムズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | サブストレートを熱処理する方法及び装置 |
JP2002222768A (ja) * | 2001-01-24 | 2002-08-09 | Ibiden Co Ltd | 半導体用治具 |
JP2007227461A (ja) * | 2006-02-21 | 2007-09-06 | Shin Etsu Handotai Co Ltd | 熱処理装置および熱処理方法 |
JP2010225645A (ja) * | 2009-03-19 | 2010-10-07 | Dainippon Screen Mfg Co Ltd | 熱処理装置 |
JP2011145442A (ja) * | 2010-01-14 | 2011-07-28 | Seiko Epson Corp | 光学物品およびその製造方法 |
JP2013069962A (ja) * | 2011-09-26 | 2013-04-18 | Dainippon Screen Mfg Co Ltd | 熱処理方法および熱処理装置 |
JP2013206896A (ja) * | 2012-03-27 | 2013-10-07 | Dainippon Screen Mfg Co Ltd | 熱処理装置 |
JP2014011256A (ja) * | 2012-06-28 | 2014-01-20 | Dainippon Screen Mfg Co Ltd | 熱処理方法および熱処理装置 |
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KR102093007B1 (ko) | 2020-03-24 |
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US10861720B2 (en) | 2020-12-08 |
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JP6770915B2 (ja) | 2020-10-21 |
KR20190080682A (ko) | 2019-07-08 |
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