JP2018100401A - 接着剤組成物及びエレクトロニクスにおけるその使用 - Google Patents
接着剤組成物及びエレクトロニクスにおけるその使用 Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
- C08K3/013—Fillers, pigments or reinforcing additives
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/04—Non-macromolecular additives inorganic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
- C09J183/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
- C08K2003/2227—Oxides; Hydroxides of metals of aluminium
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/28—Nitrogen-containing compounds
- C08K2003/282—Binary compounds of nitrogen with aluminium
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/38—Boron-containing compounds
- C08K2003/382—Boron-containing compounds and nitrogen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/38—Boron-containing compounds
- C08K2003/382—Boron-containing compounds and nitrogen
- C08K2003/385—Binary compounds of nitrogen with boron
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/011—Nanostructured additives
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/014—Additives containing two or more different additives of the same subgroup in C08K
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/28—Nitrogen-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K9/00—Use of pretreated ingredients
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6835—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during build up manufacturing of active devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Adhesive Tapes (AREA)
- Die Bonding (AREA)
Abstract
【解決手段】ポリマー、無機フィラー、及び少なくとも一つの有機溶媒を含む接着剤組成物であって、前記ポリマーが、少なくとも一つのプレセラミックポリマーであり、有利にはシリコンに基づき、前記フィラーが、一つもしくは複数の熱伝導性且つ電気絶縁性タイプの無機フィラーを含む接着剤組成物を提供する。
【選択図】なし
Description
・アクリル:−65から125℃
・ウレタン:−40から125℃
・シリコーン:−50から300℃
・ポリイミド:−140から225℃(Kapton(登録商標)については−260から400℃)
・エポキシ:−55から200℃。
・有利にはシリコンベースである少なくとも一つのプレセラミックポリマー、
・一つもしくは複数の熱伝導性且つ電気絶縁性の無機フィラー、
・少なくとも一つの有機溶媒、
を含む接着剤組成物に関する。
さらにまた、プレセラミックポリマーは、有利には架橋可能である。
一般に、シリコンベースのプレセラミックポリマーは、場合によって酸素の存在下で熱処理に供されると、シリカSiO2を形成することができる。
・芳香族炭化水素タイプの溶媒、有利にはキシレン、または
・特定のケトン溶媒、有利にはブタン-2-オン(メチルエチルケトンとしても既知)、または
・プロピレングリコールモノメチルエーテル、2-メトキシ-1-メチルエチルアセテート、アルカン、および芳香族化合物の混合物、例えば、商品名Diestone(登録商標)と呼称される溶媒、
を含んでよい。
・セラミクス化されたプレセラミックポリマー、および熱伝導性且つ電気絶縁性の無機フィラー、または
・架橋されたプレセラミックポリマー、および熱伝導性且つ電気絶縁性の無機フィラー、・架橋され且つセラミクス化されたプレセラミックポリマー、および熱伝導性且つ電気絶縁性の無機フィラー
を含む。
本発明による接着剤組成物の複数の例を調製した。これを達成するために、接着剤組成物の基板上への塗布の前に、以下の成分を混合する:
・15から30体積%の、シリカへの高い転化率を有するポリシロキサン(Wackerの品番Silres(登録商標)MK);
・60から85体積%の、一つもしくは複数の無機フィラー;
・キシレン系溶媒。
実施例1〜10による接着剤組成物の付着によって得られた層を、空気中の炉内における、350℃で30分間の熱処理の後に試験した(図5)。熱処理の終わりに、層に亀裂は観察されない。
図6および図7は、実施例1から10の接着剤組成物の付着によって得られた層の熱伝導性が、以下のパラメータに従って制御できることを示す:
・接着剤組成物中のフィラーの湿潤性を改善する、フィラーの官能化、
・ネットワークを密にすることができ、且つ浸透を促進する、架橋温度よりも高い温度での接着剤組成物の熱処理、
・フィラー粒度、
・フィラーの量。
Claims (10)
- ポリマー、無機フィラー、及び少なくとも一つの有機溶媒を含む接着剤組成物であって、
・前記ポリマーが、少なくとも一つのプレセラミックポリマーであり、有利にはシリコンに基づき、
・前記フィラーが、一つもしくは複数の熱伝導性且つ電気絶縁性タイプの無機フィラーを含む、
接着剤組成物。 - 前記プレセラミックポリマーが、ポリシロキサン、ポリシルセスキオキサン、ポリカルボシロキサン、ポリボロシラン、ポリボロシロキサン、ポリシラザン、ポリシルセスキアザン、ポリボロシラザン、ポリカルボシラン、ポリシリルカルボジイミド、およびポリシルセスキカルボジイミドを含む群から選択されることを特徴とする、請求項1に記載の接着剤組成物。
- 前記プレセラミックポリマーが、接着剤組成物全質量に対して15から50質量%を占めることを特徴とする、請求項1または2に記載の接着剤組成物。
- 前記無機フィラーが、AlN;Al2O3;hBN;窒化ケイ素;シリコンに基づくセラミック、アルミニウム、酸素、および窒素;及びBeOを含む群から選択されることを特徴とする、請求項1から3のいずれか一項に記載の接着剤組成物。
- 前記接着剤組成物が、様々なサイズおよび/または様々な形状を有する無機フィラーを含むことを特徴とする、請求項1から4のいずれかに記載の接着剤組成物。
- 前記無機フィラーが、接着剤組成物全体積に対して60から80体積%を占めることを特徴とする、請求項1から5のいずれかに一項に記載の接着剤組成物。
- ポリマーセラミックもしくは架橋プレセラミックポリマー対無機フィラーの質量比が、質量にして1:4から1:11、さらに有利には1:5から1:11の範囲内にあることを特徴とする、請求項1から5のいずれか一項に記載の接着剤組成物。
- 請求項1から7のいずれか一項に記載の接着剤組成物から成り、乾燥させた接着剤層。
- 少なくとも一つの架橋および/またはセラミクス化されたプレセラミックポリマーを含むことを特徴とする、請求項8に記載の接着剤層。
- マイクロエレクトロニクスにおける層転写法での、請求項8または9に記載の接着剤層の使用。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1662808A FR3060601B1 (fr) | 2016-12-20 | 2016-12-20 | Composition adhesive et son utilisation dans l'electronique |
FR1662808 | 2016-12-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018100401A true JP2018100401A (ja) | 2018-06-28 |
JP7050479B2 JP7050479B2 (ja) | 2022-04-08 |
Family
ID=58054332
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017241582A Active JP7050479B2 (ja) | 2016-12-20 | 2017-12-18 | 接着剤組成物及びエレクトロニクスにおけるその使用 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20180171185A1 (ja) |
EP (1) | EP3339392B1 (ja) |
JP (1) | JP7050479B2 (ja) |
CN (1) | CN108203576A (ja) |
ES (1) | ES2763133T3 (ja) |
FR (1) | FR3060601B1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020196828A (ja) * | 2019-06-04 | 2020-12-10 | リンテック株式会社 | 粘着性放熱シート |
WO2022209064A1 (ja) * | 2021-03-30 | 2022-10-06 | リンテック株式会社 | 接着ペースト、接着ペーストの使用方法及び半導体装置の製造方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108794042B (zh) * | 2018-07-13 | 2020-11-10 | 航天材料及工艺研究所 | 一种用于多孔陶瓷的粘结剂及其制备方法和使用方法 |
CN110003847A (zh) * | 2019-04-12 | 2019-07-12 | 苏州赛力菲陶纤有限公司 | 一种自愈合高温粘结剂及其制备方法 |
TWI833063B (zh) * | 2021-01-27 | 2024-02-21 | 大陸商河南烯力新材料科技有限公司 | 導熱結構與電子裝置 |
FR3122035B1 (fr) * | 2021-04-16 | 2023-04-21 | Commissariat Energie Atomique | Structure composite, destinée à une co-intégration planaire de composants électroniques de fonctions différentes |
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-
2016
- 2016-12-20 FR FR1662808A patent/FR3060601B1/fr not_active Expired - Fee Related
-
2017
- 2017-12-13 ES ES17206864T patent/ES2763133T3/es active Active
- 2017-12-13 EP EP17206864.5A patent/EP3339392B1/fr active Active
- 2017-12-15 US US15/844,053 patent/US20180171185A1/en not_active Abandoned
- 2017-12-18 JP JP2017241582A patent/JP7050479B2/ja active Active
- 2017-12-19 CN CN201711378193.4A patent/CN108203576A/zh active Pending
Patent Citations (7)
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JPS55145779A (en) * | 1979-04-26 | 1980-11-13 | Dow Corning | Silicone adhesive agent composition |
JPS5971362A (ja) * | 1982-10-15 | 1984-04-23 | Toagosei Chem Ind Co Ltd | 硬化用組成物 |
JPH03119087A (ja) * | 1989-09-30 | 1991-05-21 | Tonen Corp | セラミックス及び/又は金属接着剤と用途 |
JPH09130065A (ja) * | 1995-09-25 | 1997-05-16 | Dow Corning Corp | 電子部品の接着剤としてセラミック前駆体ポリマーを使用する方法 |
JP2004140380A (ja) * | 1996-08-27 | 2004-05-13 | Seiko Epson Corp | 薄膜デバイスの転写方法、及びデバイスの製造方法 |
JP2009267427A (ja) * | 2001-04-13 | 2009-11-12 | Commiss Energ Atom | 制御された機械的保持力を有する剥離可能な基板、およびその製造方法 |
JP2005178363A (ja) * | 2003-10-28 | 2005-07-07 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法、および基材の作製方法 |
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JP2020196828A (ja) * | 2019-06-04 | 2020-12-10 | リンテック株式会社 | 粘着性放熱シート |
JP7317577B2 (ja) | 2019-06-04 | 2023-07-31 | リンテック株式会社 | 粘着性放熱シート |
WO2022209064A1 (ja) * | 2021-03-30 | 2022-10-06 | リンテック株式会社 | 接着ペースト、接着ペーストの使用方法及び半導体装置の製造方法 |
JPWO2022209064A1 (ja) * | 2021-03-30 | 2022-10-06 |
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EP3339392A1 (fr) | 2018-06-27 |
US20180171185A1 (en) | 2018-06-21 |
ES2763133T3 (es) | 2020-05-27 |
EP3339392B1 (fr) | 2019-12-11 |
FR3060601B1 (fr) | 2018-12-07 |
CN108203576A (zh) | 2018-06-26 |
FR3060601A1 (fr) | 2018-06-22 |
JP7050479B2 (ja) | 2022-04-08 |
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