JP2018073913A - 磁気センサおよびその製造方法 - Google Patents

磁気センサおよびその製造方法 Download PDF

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Publication number
JP2018073913A
JP2018073913A JP2016209854A JP2016209854A JP2018073913A JP 2018073913 A JP2018073913 A JP 2018073913A JP 2016209854 A JP2016209854 A JP 2016209854A JP 2016209854 A JP2016209854 A JP 2016209854A JP 2018073913 A JP2018073913 A JP 2018073913A
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JP
Japan
Prior art keywords
layer
magnetoresistive element
ferromagnetic layer
ferromagnetic
magnetization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2016209854A
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English (en)
Japanese (ja)
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JP2018073913A5 (enExample
Inventor
喬干 古市
Takamoto Furuichi
喬干 古市
建一 青
Jian Yi Qing
青　　建一
阿部　竜一郎
Ryuichiro Abe
竜一郎 阿部
康夫 安藤
Yasuo Ando
康夫 安藤
幹彦 大兼
Mikihiko Okane
幹彦 大兼
貴文 中野
Takafumi Nakano
貴文 中野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tohoku University NUC
Denso Corp
Original Assignee
Tohoku University NUC
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tohoku University NUC, Denso Corp filed Critical Tohoku University NUC
Priority to JP2016209854A priority Critical patent/JP2018073913A/ja
Priority to PCT/JP2017/037844 priority patent/WO2018079404A1/ja
Publication of JP2018073913A publication Critical patent/JP2018073913A/ja
Publication of JP2018073913A5 publication Critical patent/JP2018073913A5/ja
Priority to US16/386,428 priority patent/US10901049B2/en
Pending legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/325—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being noble metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
    • H01F41/34—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film in patterns, e.g. by lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Nanotechnology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
JP2016209854A 2016-10-26 2016-10-26 磁気センサおよびその製造方法 Pending JP2018073913A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2016209854A JP2018073913A (ja) 2016-10-26 2016-10-26 磁気センサおよびその製造方法
PCT/JP2017/037844 WO2018079404A1 (ja) 2016-10-26 2017-10-19 磁気センサおよびその製造方法
US16/386,428 US10901049B2 (en) 2016-10-26 2019-04-17 Magnetic sensor and method for manufacturing said magnetic sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016209854A JP2018073913A (ja) 2016-10-26 2016-10-26 磁気センサおよびその製造方法

Publications (2)

Publication Number Publication Date
JP2018073913A true JP2018073913A (ja) 2018-05-10
JP2018073913A5 JP2018073913A5 (enExample) 2019-02-14

Family

ID=62024984

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016209854A Pending JP2018073913A (ja) 2016-10-26 2016-10-26 磁気センサおよびその製造方法

Country Status (3)

Country Link
US (1) US10901049B2 (enExample)
JP (1) JP2018073913A (enExample)
WO (1) WO2018079404A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021040799A1 (en) * 2019-08-27 2021-03-04 Western Digital Technologies, Inc. High sensitivity tmr magnetic sensor
WO2021040802A1 (en) * 2019-08-27 2021-03-04 Western Digital Technologies, Inc. Magnetic sensor with dual tmr films and the method of making the same

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7023637B2 (ja) * 2017-08-08 2022-02-22 株式会社日立ハイテク 磁気トンネル接合素子の製造方法
US10794968B2 (en) 2017-08-24 2020-10-06 Everspin Technologies, Inc. Magnetic field sensor and method of manufacture
JP7136137B2 (ja) * 2020-01-29 2022-09-13 Tdk株式会社 磁気センサ、磁気検出装置及び磁気検出システム
JP2022109020A (ja) * 2021-01-14 2022-07-27 大銀微系統股▲分▼有限公司 位置検出機構
JP7746233B2 (ja) * 2022-08-09 2025-09-30 株式会社東芝 磁気センサ及び検査装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001168416A (ja) * 1999-12-06 2001-06-22 Alps Electric Co Ltd スピンバルブ型磁気抵抗効果素子及びそれを備えた薄膜磁気へッドとそれらの製造方法
JP2003338644A (ja) * 2001-11-19 2003-11-28 Alps Electric Co Ltd 磁気検出素子及びその製造方法
JP2012255796A (ja) * 2012-08-07 2012-12-27 Tdk Corp 磁気センサおよびその製造方法
WO2015033464A1 (ja) * 2013-09-09 2015-03-12 株式会社日立製作所 磁気センサ素子

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6424506B1 (en) 1998-07-21 2002-07-23 Alps Electric Co., Ltd. Spin-valve magnetoresistive thin film element
JP3969002B2 (ja) * 2001-02-22 2007-08-29 ヤマハ株式会社 磁気センサ
US7023670B2 (en) 2001-11-19 2006-04-04 Alps Electric Co., Ltd. Magnetic sensing element with in-stack biasing using ferromagnetic sublayers
US6956766B2 (en) * 2002-11-26 2005-10-18 Kabushiki Kaisha Toshiba Magnetic cell and magnetic memory
JP4673274B2 (ja) 2006-09-11 2011-04-20 ヒタチグローバルストレージテクノロジーズネザーランドビーブイ 外部ストレス耐性の高い磁気抵抗効果型ヘッド
WO2011111493A1 (ja) * 2010-03-12 2011-09-15 アルプス・グリーンデバイス株式会社 電流センサ
JP5343936B2 (ja) 2010-07-06 2013-11-13 株式会社デンソー 磁気センサ装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001168416A (ja) * 1999-12-06 2001-06-22 Alps Electric Co Ltd スピンバルブ型磁気抵抗効果素子及びそれを備えた薄膜磁気へッドとそれらの製造方法
JP2003338644A (ja) * 2001-11-19 2003-11-28 Alps Electric Co Ltd 磁気検出素子及びその製造方法
JP2012255796A (ja) * 2012-08-07 2012-12-27 Tdk Corp 磁気センサおよびその製造方法
WO2015033464A1 (ja) * 2013-09-09 2015-03-12 株式会社日立製作所 磁気センサ素子

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021040799A1 (en) * 2019-08-27 2021-03-04 Western Digital Technologies, Inc. High sensitivity tmr magnetic sensor
WO2021040802A1 (en) * 2019-08-27 2021-03-04 Western Digital Technologies, Inc. Magnetic sensor with dual tmr films and the method of making the same
US11428758B2 (en) 2019-08-27 2022-08-30 Western Digital Technologies, Inc. High sensitivity TMR magnetic sensor
US11493573B2 (en) 2019-08-27 2022-11-08 Western Digital Technologies, Inc. Magnetic sensor with dual TMR films and the method of making the same

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US10901049B2 (en) 2021-01-26
US20190242957A1 (en) 2019-08-08
WO2018079404A1 (ja) 2018-05-03

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